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Memorias de investigación
Artículos en revistas:
AlN films sputtered on iridium electrodes for bulk acoustic wave resonators
Año:2009
Áreas de investigación
  • Industria electrónica
Datos
Descripción
We report on the growth of highly c-axis-textured aluminum nitride (AlN) films sputtered on iridium layers for thin film bulk acoustic microresonator applications. Iridium films were evaporated on oxidized silicon covered with Ti or Mo/Ti seed layers to improve crystal quality and adhesion. The crystal quality of the AlN films as a function of the crystal structure of the iridium electrode and its pre-conditioning by Ar+ bombardment was analyzed by X-ray diffraction, atomic force microscopy and wet chemical etching. Solidly mounted resonators using a single low-impedance layer of silicon dioxide for acoustic isolation were fabricated for a preliminary assessment of the piezoelectric activity of AlN films and the influence of the AlN/Ir stack on the performance of the devices. The electromechanical coupling factor of the AlN films was derived by fitting the electrical response of the resonators to Mason's physical model. AlN films exhibited very high coupling factors (7.5%) barely dependent on the width of the rocking-curve around the AlN 00¿2 reflection. The high acoustic impedance of iridium electrodes provided resonators with quality factors higher than those of similar resonators built on lighter electrodes, such as molybdenum.
Internacional
Si
JCR del ISI
Si
Título de la revista
THIN SOLID FILMS
ISSN
0040-6090
Factor de impacto JCR
1,884
Información de impacto
Volumen
DOI
10.1016/j.tsf.2009.02.139
Número de revista
517
Desde la página
4673
Hasta la página
4678
Mes
ENERO
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Participantes
  • Participante: Nick Rimmer (Aviza Technology Inc.)
  • Autor: Marta Clement Lorenzo (UPM)
  • Participante: Amit Rastogi (Aviza Technology Inc.)
  • Autor: Jimena Olivares Roza (UPM)
  • Autor: Enrique Iborra Grau (UPM)
  • Autor: Sheila González Castilla (UPM)
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Grupo de Investigación: Microsistemas y Materiales Electrónicos
  • Departamento: Tecnología Electrónica
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