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Descripción
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| This paper presents the results of the development of 2-6 GHz broadband high-power amplifiers (HPA) within the 1st iteration of the European Korrigan project. The HPAs were fabricated using AlGaN/GaN high electronic mobility transistors (HEMT) and monolithic microwave integrated circuit (MMIC) technology. Two microstrip HPAs with output-stage active periphery of 4 mm and 8 mm are reported. The two-stage amplifiers were designed to be fully matched to 50 ¿ input and output impedances. Based on a 0.5 ¿m gate-length microstrip HEMT technology, the MMICs were fabricated on a 70 ¿m thick SiC substrate. Under a 25 V DC bias condition the broadband amplifiers have exhibited about 18 dB small-signal gain. The 4mm-HPA delivers 10 W output power and 25% power added efficiency (PAE) in the 2-6 GHz frequency band, in continuous wave operation (CW) at Vds=25V. On the other hand, the 8mm- HPA delivers 16 W and 20% PAE in CW. In pulsed-mode, the output powers are 14 W and 25 W for the 4 mm and the 8 mm HPAs, respectively. | |
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Internacional
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Si |
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Nombre congreso
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European Microwave Integrated Circuits Conference 2009. EuMIC 2009 |
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Tipo de participación
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960 |
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Lugar del congreso
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Roma, Italia |
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Revisores
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Si |
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ISBN o ISSN
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978-1-4244-4749-7 |
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DOI
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Fecha inicio congreso
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28/09/2009 |
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Fecha fin congreso
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29/09/2009 |
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Desde la página
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218 |
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Hasta la página
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221 |
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Título de las actas
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European Microwave Integrated Circuits Conference 2009. EuMIC 2009 |