Observatorio de I+D+i UPM

Descripción
This paper presents the results of the development of 2-6 GHz broadband high-power amplifiers (HPA) within the 1st iteration of the European Korrigan project. The HPAs were fabricated using AlGaN/GaN high electronic mobility transistors (HEMT) and monolithic microwave integrated circuit (MMIC) technology. Two microstrip HPAs with output-stage active periphery of 4 mm and 8 mm are reported. The two-stage amplifiers were designed to be fully matched to 50 ¿ input and output impedances. Based on a 0.5 ¿m gate-length microstrip HEMT technology, the MMICs were fabricated on a 70 ¿m thick SiC substrate. Under a 25 V DC bias condition the broadband amplifiers have exhibited about 18 dB small-signal gain. The 4mm-HPA delivers 10 W output power and 25% power added efficiency (PAE) in the 2-6 GHz frequency band, in continuous wave operation (CW) at Vds=25V. On the other hand, the 8mm- HPA delivers 16 W and 20% PAE in CW. In pulsed-mode, the output powers are 14 W and 25 W for the 4 mm and the 8 mm HPAs, respectively.
Internacional	Si
Nombre congreso	European Microwave Integrated Circuits Conference 2009. EuMIC 2009
Tipo de participación	960
Lugar del congreso	Roma, Italia
Revisores	Si
ISBN o ISSN	978-1-4244-4749-7
DOI
Fecha inicio congreso	28/09/2009
Fecha fin congreso	29/09/2009
Desde la página	218
Hasta la página	221
Título de las actas	European Microwave Integrated Circuits Conference 2009. EuMIC 2009

Esta actividad pertenece a memorias de investigación

• Participante: Luisa Marescialli (Selex Sistemi Integrati, Italy)
• Autor: Jesus Grajal De la Fuente (UPM)
• Participante: Antonio Cetronio (Selex Sistemi Integrati, Italy)
• Autor: María Angeles González Garrido (UPM)

• Creador: Grupo de Investigación: Microondas y Radar
• Departamento: Señales, Sistemas y Radiocomunicaciones