Memorias de investigación
Communications at congresses:
R. CUERDO, F. CALLE "Source and drain resistances behaviour as a function of temperature and drain current in AlGaN/GaN HEMTs" 8th International Conference of Nitride Semiconductors (ICNS-8) Jeju (Korea), 2009
Year:2009

Research Areas
  • Electronics engineering

Information
Abstract
Relacionado con Línea de Investigación del Grupo GDS-ISOM, consultar en http://www.isom.upm.es/invdes.php
International
Si
Congress
8th International Conference of Nitride Semiconductors (ICNS-8)
960
Place
Jeju (Korea), 2009
Reviewers
Si
ISBN/ISSN
0000000000000
Start Date
18/10/2009
End Date
23/10/2009
From page
1
To page
2
"Source and drain resistances behaviour as a function of temperature and drain current in AlGaN/GaN HEMTs"
Participants

Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Grupo de Dispositivos Semiconductores del ISOM
  • Centro o Instituto I+D+i: Instituto Universitario de Sistemas Optoelectrónicos y Microtecnología
  • Departamento: Ingeniería Electrónica