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Abstract
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| In this paper we characterize the first functional, lattice matched, GaInP/GaInAs/Ge triple junction solar cells grown and manufactured in our lab with an efficiency conversion of 31.5% at a concentration level of 1000 suns. This is our first approach for transferring the world record double junction solar cell, also developed in our group, into a Ge substrate. First experimental results are presented and the strategy to improve its efficiency is outlined. | |
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International
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Si |
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Congress
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2009 Spanish Conference on Electron Devices |
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960 |
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Place
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Santiago de Compostela |
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Reviewers
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Si |
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ISBN/ISSN
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978-1-4244-2839-7 |
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Start Date
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11/02/2009 |
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End Date
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13/02/2009 |
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From page
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383 |
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To page
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386 |
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2009 Spanish Conference on Electron Devices |