Abstract
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A nonlinear behavioral model of the heterojunction bipolar transistor (HBT) has been extracted and compared with other conventional nonlinear models in the framework of HBT modeling. The PHD model is extracted from the responses of a HBT stimulated by a set of harmonically related discrete tones, where the fundamental tone is dominant. To check the model validity and efficiency, the model results have been compared with the large signal responses of two different models, a tablebased model and an analytical model. Excellent results have been obtained under small and large signal excitations for SiGe HBTs. | |
International
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No |
Congress
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XXIV Simposium Nacional de la Unión Científica Internacional de Radio. URSI 2009 |
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960 |
Place
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Palacio de la Magdalena. Santander. Cantabria |
Reviewers
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Si |
ISBN/ISSN
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978-84-8102-550-7 |
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Start Date
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16/09/2009 |
End Date
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18/09/2009 |
From page
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1 |
To page
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4 |
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URSI 2009. XXIV Simposium Nacional de la Unión Científica Internacional de Radio. |