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Memorias de investigación
Artículos en revistas:
Improvements in the MOVPE growth of multi-junction solar cells for very high concentration
Año:2007
Áreas de investigación
  • Industria electrónica
Datos
Descripción
The present work presents some lines of research aimed to contribute to a better performance of multi-junction solar cells at very high concentrations (1000 suns) by minimising the series resistance of these devices. In the first section, a set of results is presented to ascertain the potential of tellurium as a possible n-type dopant to improve the performance of tunnel junctions and/or the top cell emitter. Some anomalies in the incorporation of Te into GaInP are described and their impact on solar cell growth and operation is discussed. In the second section, the contribution of the bottom cell BSF layer to the series resistance is analyzed by comparing three different alternatives, namely p++ GaAs; pGaInP; and p++Al0.2Ga0.8As. BSFs made of moderately doped GaInP are demonstrated to contribute significantly to the series resistance of the device, whilst p++GaAs layers are shown to produce lower photocurrents. On the other hand, p++Al0.2Ga0.8 As layers are shown to unite both high photocurrents and low series resistance, being thus the optimum option.
Internacional
Si
JCR del ISI
Si
Título de la revista
J CRYST GROWTH
ISSN
0022-0248
Factor de impacto JCR
1,95
Información de impacto
Volumen
298
DOI
Número de revista
0
Desde la página
762
Hasta la página
766
Mes
ENERO
Ranking
Esta actividad pertenece a memorias de investigación
Participantes
  • Autor: Beatriz Galiana Blanco (UPM)
  • Autor: Ignacio Rey-Stolle Prado (UPM)
  • Autor: Ivan Garcia Vara (UPM)
  • Autor: Carlos Algora Del Valle (UPM)
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Grupo de Investigación: Semiconductores III-V
  • Centro o Instituto I+D+i: Instituto de Energía Solar
  • Departamento: Electrónica Física
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