Artículos en revistas:
Physics-Based Design and Optimization of Schottky Diode Frequency Multipliers for Terahertz Applications
Physics-Based Design and Optimization of Schottky Diode Frequency Multipliers for Terahertz Applications
Año:2010
Áreas de investigación
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Tecnología electrónica y de las comunicaciones
Datos
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Descripción
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| Planar Schottky diode frequency multipliers are by far the most employed devices for local oscillator (LO) power generation at terahertz frequencies. In order to push up to the limit the available LO power at terahertz frequencies, the use of accurate physics-based simulation tools is highly necessary to develop multiplier circuits with the highest performance. This paper investigates the potential capabilities of Schottky multipliers for LOpower generation up to 2.4 THz by means of an in-house computer-aided design tool that combines harmonic balance techniques with an accurate physics-based numerical model of the semiconductor device. According to numerical simulation results, a 32- W LO power could be theoretically achieved with a 2.4-THz LO chain at room temperature from a 150-mW -band solid-state LO source. This demonstrates that there is still a broad margin for the improvement of state-of-the-art terahertz LO power sources. | |
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Internacional
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Si |
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JCR del ISI
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Si |
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Título de la revista
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IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES |
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ISSN
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0018-9480 |
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Factor de impacto JCR
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2,076 |
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Información de impacto
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Volumen
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58 |
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DOI
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Número de revista
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7 |
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Desde la página
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1933 |
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Hasta la página
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1942 |
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Mes
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JULIO |
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Ranking
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Participantes
- Autor: José Vicente Siles Pérez (UPM)
- Autor: Jesus Grajal De la Fuente (UPM)
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
- Creador: Grupo de Investigación: Microondas y Radar
- Departamento: Señales, Sistemas y Radiocomunicaciones
S2i 2023 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNPACTO (IPT-020000-2010-22)