Memorias de investigación
Communications at congresses:
Physics-Based Modeling Aspects of Schottky Diodes for Circuit Design Above 1 THz
Year:2010

Research Areas
  • Electronic technology and of the communications

Information
Abstract
This work analyzes some of the physical aspects that must be dealt with for terahertz circuit design based on Schottky diodes beyond 1 THz. The high operation frequencies and the small dimensions that will be required for the devices make it essential to employ physics-based numerical simulators for the device optimization. We present an overview of the possible alternatives and discuss the most adequate ones considering both accuracy and simulation time. As a reference, we employ a Monte Carlo simulator because it provides a numerical solution to the Boltzmann Transport Equation. Since high doping levels will be necessary at these frequencies, the MC analyses should be based on Fermi-Dirac statistics. An efficient method for the inclusion of Fermi-Dirac statistics in MC simulators for non-homogeneous devices is also outlined and the effects of using Fermi-Dirac statistics instead of Maxwell-Boltzmann in Schottky diode models are analyzed.
International
Si
Congress
21ST International Symposium on Space Terahertz Technology
960
Place
Oxford, Reino Unido.
Reviewers
Si
ISBN/ISSN
Start Date
23/03/2010
End Date
25/03/2010
From page
404
To page
410
Proceedings Conference
Participants
  • Autor: José Vicente Siles Pérez UPM
  • Autor: Aldo Di Carlo University of Rome II Tor Vergata, Roma. Italia
  • Autor: Jesus Grajal De la Fuente UPM

Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Microondas y Radar
  • Departamento: Señales, Sistemas y Radiocomunicaciones