Descripción
|
|
---|---|
This work analyzes some of the physical aspects that must be dealt with for terahertz circuit design based on Schottky diodes beyond 1 THz. The high operation frequencies and the small dimensions that will be required for the devices make it essential to employ physics-based numerical simulators for the device optimization. We present an overview of the possible alternatives and discuss the most adequate ones considering both accuracy and simulation time. As a reference, we employ a Monte Carlo simulator because it provides a numerical solution to the Boltzmann Transport Equation. Since high doping levels will be necessary at these frequencies, the MC analyses should be based on Fermi-Dirac statistics. An efficient method for the inclusion of Fermi-Dirac statistics in MC simulators for non-homogeneous devices is also outlined and the effects of using Fermi-Dirac statistics instead of Maxwell-Boltzmann in Schottky diode models are analyzed. | |
Internacional
|
Si |
Nombre congreso
|
21ST International Symposium on Space Terahertz Technology |
Tipo de participación
|
960 |
Lugar del congreso
|
Oxford, Reino Unido. |
Revisores
|
Si |
ISBN o ISSN
|
|
DOI
|
|
Fecha inicio congreso
|
23/03/2010 |
Fecha fin congreso
|
25/03/2010 |
Desde la página
|
404 |
Hasta la página
|
410 |
Título de las actas
|
Proceedings Conference |