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Descripción
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| We investigate the sputter growth of very thin aluminum nitride (AlN) films on iridium electrodes for high frequency filtering applications. The structure and piezoelectric activity of AlN films are assessed through XRD, FTIR, stress and frequency response measurements. A combination of a pre-deposition rf plasma treatment of the Ir bottom electrode followed by a two-step ac reactive sputtering of the AlN film allows to optimize the crystal quality and residual stress of AlN films with thicknesses as low as 160 nm. BAW resonators tuned around 8 GHz are built on top of polished Bragg reflectors composed of porous SiO2 and Ir layers. Material coupling factors kmat2 of 6.7% and quality factors Q up to 900 are achieved. The films obtained are competitive for X-band filter fabrication. | |
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Internacional
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Si |
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Nombre congreso
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2010 IEEE INTERNATIONAL ULTRASONICS SYMPOSIUM |
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Tipo de participación
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960 |
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Lugar del congreso
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San Diego |
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Revisores
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Si |
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ISBN o ISSN
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1051-0117 |
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DOI
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Fecha inicio congreso
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11/10/2010 |
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Fecha fin congreso
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14/10/2010 |
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Desde la página
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1 |
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Hasta la página
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4 |
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Título de las actas
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2010 IEEE INTERNATIONAL ULTRASONICS SYMPOSIUM PROCEEDUNGS |