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Descripción
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| SiGe nanowires were grown by the vapor-liquid-solid method using a low pressure chemical vapor deposition reactor and different flows of the GeH4 and Si2H6 gas precursors. The morphology of the nanowires was studied by field emission scanning electron microscopy, and the length, diameter and density of nanowires were determined. Their structure and crystallinity were analyzed by transmission electron microscopy and its related techniques. Energy dispersive X-ray emission of individual nanowires as well a Raman spectroscopy were used to determine their composition and to analyze its homogeneity. | |
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Internacional
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Si |
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Nombre congreso
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Materials Research Society 2010 Spring Meeting |
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Tipo de participación
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960 |
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Lugar del congreso
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San Francisco, California, EE. UU. |
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Revisores
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Si |
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ISBN o ISSN
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978-1-60511-235-0 |
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DOI
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Fecha inicio congreso
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05/04/2010 |
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Fecha fin congreso
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09/04/2010 |
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Desde la página
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1 |
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Hasta la página
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6 |
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Título de las actas
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Low-Dimensional Functional Nanostructures-Fabrication, Characterization and Applications. Materials Research Society Symposium Proceedings 1258 |