Memorias de investigación
Communications at congresses:
A. VILALTA-CLEMENTE, G. R. MUTTA, M. MORALES, J.L. DOUALAN, J. GRANDAL, M. A. SÁNCHEZ-GARCÍA, F. CALLE, E. VALCHEVA, K. KIRILOV, P. RUTERANA "Structural Study of InN layer with compressive strain" E-MRS, Symposium G: Physics and applications of novel gain materials based on III-V-N compounds Strasbourg (France), 2010
Year:2010
Research Areas
  • Engineering,
  • Electronic technology and of the communications
Information
Abstract
Relacionado con Línea de Investigación del GDS del ISOM
International
Si
Congress
E-MRS, Symposium G: Physics and applications of novel gain materials based on III-V-N compounds Strasbourg (France), 2010
960
Place
Strasbourg (France), 2010
Reviewers
Si
ISBN/ISSN
0000000000000
Start Date
07/06/2010
End Date
11/05/2010
From page
0
To page
0
Structural Study of InN layer with compressive strain
Participants
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Grupo de Dispositivos Semiconductores del ISOM
  • Departamento: Ingeniería Electrónica
  • Centro o Instituto I+D+i: Instituto Universitario de Sistemas Optoelectrónicos y Microtecnología