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Abstract
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| A novel MOVPE growth sequence has been proposed to form efficient TPV cells based on germanium. This process consist of the formation of a highly rough GaInP layer on the Ge wafer, while maintaining he control of P diffusion into the germanium to attain the desired p/n junction depth. The textured GaInP layer is aimed to act as a light trapping structure to minimise reflection losses in TPV applications where the emitter is usually placed very close to the converter and thus radiation reaches the cell from multiple directions. Morphological analyses and the quantum efficiency of the grown samples demonstrate that the goals of the process have been achieved. | |
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International
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Si |
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Congress
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12th European Workshop on Metalorganic Vapour Phase Epitaxy |
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960 |
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Place
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Bratislava (Eslovaquia) |
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Reviewers
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Si |
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ISBN/ISSN
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Start Date
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03/06/2007 |
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End Date
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06/06/2007 |
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