Artículos en revistas:
Reducing carrier escape in the InAs/GaAs quantum dot intermediate band solar cell
Año:2010
Áreas de investigación
- Tecnología electrónica y de las comunicaciones
Datos
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Descripción
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| Intermediate band solar cells (IBSCs) fabricated to date from In (Ga)As/GaAs quantum dot arrays (QD-IBSC) exhibit a quantum efficiency (QE) that extends to below bandgap energies. However, the production of sub-bandgap photocurrent relies often on the thermal and/or tunneling escape of carriers from the QDs, which is incompatible with preservation of the output voltage. In this work, we test the effectiveness of introducing a thick GaAs spacer in addition to an InAlGaAs strain relief layer (SRL) over the QDs to reduce carrier escape. From an analysis of the QE at different temperatures, it is concluded that escape via tunneling can be completely blocked under short-circuit conditions, and that carriers confined in QDs with an InAlGaAs SRL exhibit a thermal escape activation energy over 100 meV larger than in the case of InAs QDs capped only with GaAs. (C) 2010 American Institute of Physics. [doi:10.1063/1.3468520] | |
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Internacional
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Si |
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JCR del ISI
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Si |
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Título de la revista
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JOURNAL OF APPLIED PHYSICS |
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ISSN
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0021-8979 |
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Factor de impacto JCR
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2,072 |
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Información de impacto
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Volumen
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108 |
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DOI
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Número de revista
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Desde la página
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064513-1 |
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Hasta la página
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064513-7 |
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Mes
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ENERO |
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Ranking
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Ver publicación en Archivo digital upm
Esta actividad pertenece a memorias de investigación
Participantes
- Autor: Elisa Antolin Fernandez UPM
- Autor: Antonio Marti Vega UPM
- Autor: Pablo Garcia-Linares Fontes UPM
- Autor: Estela Hernandez Martin UPM
- Autor: Antonio Luque Lopez UPM
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
- Creador: Grupo de Investigación: Silicio y Nuevos Conceptos para Células Solares
- Centro o Instituto I+D+i: Instituto de Energía Solar