Memorias de investigación
Research Publications in journals:
Ionization energy levels in C-doped InxGa1-xN alloys
Year:2010
Research Areas
  • Physics chemical and mathematical,
  • Chemistry
Information
Abstract
The InxGa1-xN alloys present levels as a result of the intentional (doped) or unintentional (contamination) introduction of C atoms into the host semiconductor. The III-V nitride semiconductors and their alloys usually crystallize in the wurtzite structure although the zinc blende structure has also been grown. We obtained the InxGa1-xN: C ionization energies from first-principles calculations of the two ordered wurtzite and zinc blende structures using different exchange and correlation terms. In accordance with the experimental results, the ionization levels could give rise, on some occasions, to a metallic impurity band. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3515854]
International
Si
JCR
Si
Title
APPLIED PHYSICS LETTERS
ISBN
0003-6951
Impact factor JCR
3,554
Impact info
Volume
97
Journal number
From page
192102-1
To page
192102-3
Month
NOVIEMBRE
Ranking
Participants
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Silicio y Nuevos Conceptos para Células Solares
  • Centro o Instituto I+D+i: Instituto de Energía Solar