Memorias de investigación
Research Publications in journals:
Acceptor and donor ionization energy levels in O-doped ZnTe
Year:2010
Research Areas
  • Chemistry,
  • Physics - Semiconductors and band structure
Information
Abstract
The O-doped ZnTe (ZnTe1-xOx) alloys present induce levels through O doping into the host semiconductor gap. ZnTe usually crystallizes in the zinc-blend structure and ZnO in the wurtzite structure under normal conditions. Therefore two possible ZnTe1-xOx phases may coexist, although in different proportions, depending on experimental growth conditions. We present total energy calculations and analyze some of their electronic properties with respect to: the two ordered wurtzite and zinc-blende structures, the concentration (x from 0.0078 to 0.5), the localized basis set (from single-zeta to quadruple-zeta with polarization basis sets), and the variation of the ionization levels with x and with the distance O-Zn. (C) 2010 Elsevier B.V. All rights reserved.
International
Si
JCR
Si
Title
COMPUTATIONAL MATERIALS SCIENCE
ISBN
0927-0256
Impact factor JCR
1,522
Impact info
Volume
49
Journal number
From page
368
To page
371
Month
AGOSTO
Ranking
Participants
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Silicio y Nuevos Conceptos para Células Solares
  • Centro o Instituto I+D+i: Instituto de Energía Solar