Descripción
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The isoelectronic doping of ZnTe with oxygen leads to deep levels on which carriers recombine radiatively via intermediate band states. The electronic density and the impurity-host character of these deep levels are analyzed using first principles, for the wurtzite and zinc-blende structures, different oxygen concentration, and different exchange-correlation approach. | |
Internacional
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Si |
JCR del ISI
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Título de la revista
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APPLIED PHYSICS LETTERS |
ISSN
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0003-6951 |
Factor de impacto JCR
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3,554 |
Información de impacto
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Volumen
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96 |
DOI
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Número de revista
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Desde la página
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121104-1 |
Hasta la página
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121104-3 |
Mes
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MARZO |
Ranking
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