Research Publications in journals:
Analyses of the intermediate energy levels in ZnTe:O alloys
Year:2010
Research Areas
- Physic chemistry
Information
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Abstract
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| The isoelectronic doping of ZnTe with oxygen leads to deep levels on which carriers recombine radiatively via intermediate band states. The electronic density and the impurity-host character of these deep levels are analyzed using first principles, for the wurtzite and zinc-blende structures, different oxygen concentration, and different exchange-correlation approach. | |
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International
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Si |
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JCR
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Si |
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Title
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APPLIED PHYSICS LETTERS |
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ISBN
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0003-6951 |
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Impact factor JCR
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3,554 |
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Impact info
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Volume
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96 |
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Journal number
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From page
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121104-1 |
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To page
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121104-3 |
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Month
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MARZO |
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Ranking
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Open Access publication
Participants
- Autor: Cesar Tablero Crespo UPM
- Autor: Antonio Marti Vega UPM
- Autor: Antonio Luque Lopez UPM
Research Group, Departaments and Institutes related
- Creador: Grupo de Investigación: Silicio y Nuevos Conceptos para Células Solares
- Centro o Instituto I+D+i: Instituto de Energía Solar