Memorias de investigación
Artículos en revistas:
Tunnel diode modeling, including nonlocal trap-assisted tunneling: A focus on III-V multijunction solar cell simulation
Año:2010
Áreas de investigación
  • Tecnología electrónica y de las comunicaciones
Datos
Descripción
Multijunction solar cells (MJCs) based on III¿V semiconductors constitute the state-of-the-art approach for highefficiency solar energy conversion. These devices, consisting of a stack of various solar cells, are interconnected by tunnel diodes. Reliable simulations of the tunnel diode behavior are still a challenge for solar cell applications. In this paper, a complete description of the model implemented in Silvaco ATLAS is shown, demonstrating the importance of local and nonlocal trap-assisted tunneling. We also explain how the measured doping profile and the metalization-induced series resistance influence the behavior of the tunnel diodes. Finally, we detail the different components of the series resistance and show that this can help extract the experimental voltage drop experienced by an MJC due to the tunnel junction. The value of this intrinsic voltage is important for achieving high efficiencies at concentrations near 1000 suns.
Internacional
Si
JCR del ISI
Si
Título de la revista
IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN
0018-9383
Factor de impacto JCR
2,445
Información de impacto
Volumen
57
DOI
Número de revista
Desde la página
2564
Hasta la página
2571
Mes
ENERO
Ranking
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Participantes
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Grupo de Investigación: Semiconductores III-V
  • Centro o Instituto I+D+i: Instituto de Energía Solar