Artículos en revistas:
Tunnel diode modeling, including nonlocal trap-assisted tunneling: A focus on III-V multijunction solar cell simulation
Tunnel diode modeling, including nonlocal trap-assisted tunneling: A focus on III-V multijunction solar cell simulation
Año:2010
Áreas de investigación
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Tecnología electrónica y de las comunicaciones
Datos
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Descripción
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| Multijunction solar cells (MJCs) based on III¿V semiconductors constitute the state-of-the-art approach for highefficiency solar energy conversion. These devices, consisting of a stack of various solar cells, are interconnected by tunnel diodes. Reliable simulations of the tunnel diode behavior are still a challenge for solar cell applications. In this paper, a complete description of the model implemented in Silvaco ATLAS is shown, demonstrating the importance of local and nonlocal trap-assisted tunneling. We also explain how the measured doping profile and the metalization-induced series resistance influence the behavior of the tunnel diodes. Finally, we detail the different components of the series resistance and show that this can help extract the experimental voltage drop experienced by an MJC due to the tunnel junction. The value of this intrinsic voltage is important for achieving high efficiencies at concentrations near 1000 suns. | |
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Internacional
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Si |
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JCR del ISI
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Si |
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Título de la revista
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IEEE TRANSACTIONS ON ELECTRON DEVICES |
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ISSN
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0018-9383 |
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Factor de impacto JCR
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2,445 |
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Información de impacto
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Volumen
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57 |
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DOI
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Número de revista
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Desde la página
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2564 |
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Hasta la página
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2571 |
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Mes
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ENERO |
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Ranking
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Ver publicación en Archivo digital upm
Participantes
- Participante: Mathieu Baudrit (CEA)
- Autor: Carlos Algora Del Valle (UPM)
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
- Creador: Grupo de Investigación: Semiconductores III-V
- Centro o Instituto I+D+i: Instituto de Energía Solar
S2i 2023 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNPACTO (IPT-020000-2010-22)