Memorias de investigación
Research Publications in journals:
Tunnel diode modeling, including nonlocal trap-assisted tunneling: A focus on III-V multijunction solar cell simulation
Year:2010
Research Areas
  • Electronic technology and of the communications
Information
Abstract
Multijunction solar cells (MJCs) based on III¿V semiconductors constitute the state-of-the-art approach for highefficiency solar energy conversion. These devices, consisting of a stack of various solar cells, are interconnected by tunnel diodes. Reliable simulations of the tunnel diode behavior are still a challenge for solar cell applications. In this paper, a complete description of the model implemented in Silvaco ATLAS is shown, demonstrating the importance of local and nonlocal trap-assisted tunneling. We also explain how the measured doping profile and the metalization-induced series resistance influence the behavior of the tunnel diodes. Finally, we detail the different components of the series resistance and show that this can help extract the experimental voltage drop experienced by an MJC due to the tunnel junction. The value of this intrinsic voltage is important for achieving high efficiencies at concentrations near 1000 suns.
International
Si
JCR
Si
Title
IEEE TRANSACTIONS ON ELECTRON DEVICES
ISBN
0018-9383
Impact factor JCR
2,445
Impact info
Volume
57
Journal number
From page
2564
To page
2571
Month
ENERO
Ranking
Participants
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Semiconductores III-V
  • Centro o Instituto I+D+i: Instituto de Energía Solar