Memorias de investigación
Research Publications in journals:
Nanoscale electrical characterization of arrowhead defects in GaInP thin films grown on Ge
Year:2010
Research Areas
  • Electronic technology and of the communications
Information
Abstract
In this work the authors present an electrical characterization of the so called arrowhead defects ADs in GaInP thin films grown on Ge100 substrates misoriented by 6° toward 111. The samples have been evaluated by means of conductive atomic force microscopy C-AFM and Kelvin probe force microscopy KPFM. It is shown that the ADs have terminating planes which are composed from two alternating subplanes inclined 12° close to 105 plane and 6° close to 109 with respect to the 100 plane. The terminating planes of the arrowhead defects possess higher conductivity compared to their surrounding. The terminating planes differ also in their electrical behavior from each other, demonstrating different values of conductivity C-AFM and bucking voltages KPFM. The difference in current densities between two terminating planes was found to be 17035 A/m2 at 3 V, and the difference in the bucking voltages was 70 mV at 5 V of the electrical excitation signal in the lift mode. It is suggested that the distinctive electrical behavior of the ADs is caused by an ordering effect which leads in this case to the degraded electrical properties of the ADs.
International
Si
JCR
Si
Title
JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY B
ISBN
1071-1023
Impact factor JCR
1,46
Impact info
Volume
28
Journal number
From page
C5G5
To page
C5G10
Month
JULIO
Ranking
Participants
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Semiconductores III-V
  • Centro o Instituto I+D+i: Instituto de Energía Solar