Memorias de investigación
Artículos en revistas:
Degradation mechanism analysis in temperature stress tests on III-V ultra-high concentrator solar cells using a 3D distributed model
Año:2010
Áreas de investigación
  • Tecnología electrónica y de las comunicaciones
Datos
Descripción
A temperature stress test was carried out on GaAs single-junction solar cells to analyze the degradation suffered when working at ultra-high concentrations. The acceleration of the degradation was realized at two different temperatures: 130 degrees C and 150 degrees C. In both cases, the degradation trend was the same, and only gradual failures were observed. A fit of the dark I-V curve at 25 degrees C with a 3D distributed model before and after the test was done. The fit with the 3D distributed model revealed degradation at the perimeter because the recombination current in the depletion region of the perimeter increased by about fourfold after the temperature stress test. Therefore, this test did not cause any morphological change in the devices, and although the devices were isolated with silicone, the perimeter region was revealed as the most fragile component of the solar cell. Consequently, the current flowing beneath the busbar favors the progression of defects in the device in the perimeter region.
Internacional
Si
JCR del ISI
Si
Título de la revista
MICROELECTRONICS RELIABILITY
ISSN
0026-2714
Factor de impacto JCR
1,117
Información de impacto
Volumen
50
DOI
Número de revista
Desde la página
1875
Hasta la página
1879
Mes
SEPTIEMBRE
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Participantes
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Grupo de Investigación: Semiconductores III-V
  • Centro o Instituto I+D+i: Instituto de Energía Solar