Memorias de investigación
Research Publications in journals:
Degradation mechanism analysis in temperature stress tests on III-V ultra-high concentrator solar cells using a 3D distributed model
Year:2010
Research Areas
  • Electronic technology and of the communications
Information
Abstract
A temperature stress test was carried out on GaAs single-junction solar cells to analyze the degradation suffered when working at ultra-high concentrations. The acceleration of the degradation was realized at two different temperatures: 130 degrees C and 150 degrees C. In both cases, the degradation trend was the same, and only gradual failures were observed. A fit of the dark I-V curve at 25 degrees C with a 3D distributed model before and after the test was done. The fit with the 3D distributed model revealed degradation at the perimeter because the recombination current in the depletion region of the perimeter increased by about fourfold after the temperature stress test. Therefore, this test did not cause any morphological change in the devices, and although the devices were isolated with silicone, the perimeter region was revealed as the most fragile component of the solar cell. Consequently, the current flowing beneath the busbar favors the progression of defects in the device in the perimeter region.
International
Si
JCR
Si
Title
MICROELECTRONICS RELIABILITY
ISBN
0026-2714
Impact factor JCR
1,117
Impact info
Volume
50
Journal number
From page
1875
To page
1879
Month
SEPTIEMBRE
Ranking
Participants
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Semiconductores III-V
  • Centro o Instituto I+D+i: Instituto de Energía Solar