Abstract
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The effect of slow cooling after different high temperature treatments on the interstitial iron concentration and on the electron lifetime of p-type mc-Si wafers has been investigated. The respective impacts of internal relaxation gettering and external segregation gettering of metal impurities during an extended phosphorous diffusion gettering are studied. It is shown that the enhanced reduction of interstitial Fe during extended P-gettering is due to an enhanced segregation gettering while faster impurities like Cu and Ni are possibly reduced due to an internal gettering effect. | |
International
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Si |
JCR
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No |
Title
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SOLID STATE PHENOMENA |
ISBN
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1012-0394 |
Impact factor JCR
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0 |
Impact info
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|
Volume
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156-158 |
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Journal number
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From page
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387 |
To page
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393 |
Month
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ENERO |
Ranking
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