Descripción
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After the successful implementation of a record performing dual-junction solar cell at ultra high concentration, in this paper we present the optimization of key aspects in the transition to a triple-junction device, namely the heteronucleation of III-V structures onto germanium substrates. This optimization is based on in-situ RAS measurements during the MOVPE growth of the triple-junction solar cell structure and subsequent AFM analysis. The correlation between RAS and AFM allows detecting which RAS features correlate with good morphology and low RMS roughness. TEM analysis confirms that the quality of the triple-junction structures grown is good, revealing no trace of antiphase disorder, and showing flat, sharp and clear interfaces. Triple-junction solar cells manufactured on these structures have shown a peak efficiency of 36.2% at 700X, maintaining an efficiency over 35% from 300 to 1200 suns. | |
Internacional
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Si |
Nombre congreso
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25th European Photovoltaic Solar Energy Conference and Exhibition - 5th World Conference on Photovoltaic Energy Conversion |
Tipo de participación
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960 |
Lugar del congreso
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Valencia |
Revisores
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Si |
ISBN o ISSN
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3-936338-26-4 |
DOI
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Fecha inicio congreso
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06/09/2010 |
Fecha fin congreso
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10/09/2010 |
Desde la página
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152 |
Hasta la página
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155 |
Título de las actas
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25th European Photovoltaic Solar Energy Conference and Exhibition |