Memorias de investigación
Ponencias en congresos:
Optical transmittance maximization in superior performance tunnel junctions for very high concentration applications
Año:2010
Áreas de investigación
  • Tecnología electrónica y de las comunicaciones
Datos
Descripción
The light transmission through a tunnel junction in a multijunction solar cell depends on the optical properties and thickness of the whole solar cell layers stack, which configure the light absorption, reflection and interference processes taking place inside the semiconductor structure. In this paper the focus is put on the AlGaAs barrier layers of p++AlGaAs/n++GaAs and p++AlGaAs/n++GaInP tunnel junctions inserted into a GaInP/GaAs dualjunction solar cell. The aim is to analyze the effect of the thickness and Al-composition of these barrier layers on the light transmittance of the tunnel junction, using the bottom cell Jsc as the merit figure to appraise it. An intricate relation between this Jsc and the barrier layers parameters, caused by interferential reflectance, was observed. The importance of an appropriate optical design of the semiconductor structure was corroborated by a non-negligible gain in the bottom cell Jsc when choosing the appropriate barrier layers Al-compositions and thicknesses from a range of practical values for which the optical absorption is not the main contributor to the optical losses.
Internacional
Si
Nombre congreso
25th European Photovoltaic Solar Energy Conference and Exhibition - 5th World Conference on Photovoltaic Energy Conversion
Tipo de participación
960
Lugar del congreso
Valencia
Revisores
Si
ISBN o ISSN
3-936338-26-4
DOI
Fecha inicio congreso
06/09/2010
Fecha fin congreso
10/09/2010
Desde la página
973
Hasta la página
978
Título de las actas
25th European Photovoltaic Solar Energy Conference and Exhibition - 5th World Conference on Photovoltaic Energy Conversion
Esta actividad pertenece a memorias de investigación
Participantes
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Grupo de Investigación: Semiconductores III-V
  • Centro o Instituto I+D+i: Instituto de Energía Solar