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Memorias de investigación
Ponencias en congresos:
Distributed simulation of real tunnel junction effects in multi-junction solar cells
Año:2010
Áreas de investigación
  • Tecnología electrónica y de las comunicaciones
Datos
Descripción
In this paper, we present an improved 3D distributed model that considers real operation regimes in a tunnel junction. This advanced method is able to accurately simulate the high concentrations at which the current in the solar cell surpasses the peak current of the tunnel junction. Simulations of dual-junction solar cells were carried out with different light profiles and including chromatic aberration to show the capabilities of the model. Such simulations show that, under some circumstances, the solar cell short circuit current may be slightly higher than the tunnel junction peak current without showing the characteristic dip in the J-V curve. This behavior is caused by the lateral current spreading towards the dark regions, which occurs through the anode region of the tunnel junction.
Internacional
Si
Nombre congreso
6th International Conference on Concentrating Photovoltaic Systems
Tipo de participación
960
Lugar del congreso
Friburgo (Alemania)
Revisores
Si
ISBN o ISSN
978-0-7354-0827-2
DOI
Fecha inicio congreso
07/04/2010
Fecha fin congreso
09/04/2010
Desde la página
24
Hasta la página
27
Título de las actas
6th International Conference on Concentrating Photovoltaic Systems
Esta actividad pertenece a memorias de investigación
Participantes
  • Autor: Pilar Espinet González (UPM)
  • Autor: Ivan Garcia Vara (UPM)
  • Autor: Ignacio Rey-Stolle Prado (UPM)
  • Autor: Carlos Algora Del Valle (UPM)
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Grupo de Investigación: Semiconductores III-V
  • Centro o Instituto I+D+i: Instituto de Energía Solar
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