Memorias de investigación
Research Publications in journals:
Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots
Year:2010
Research Areas
  • Mechanical aeronautics and naval engineering
Information
Abstract
We present experimental evidence of Sb incorporation inside InAs/GaAs001 quantum dots exposed to an antimony flux immediately before capping with GaAs. The Sb composition profile inside the nanostructures as measured by cross-sectional scanning tunneling and electron transmission microscopies show two differentiated regions within the quantum dots, with an Sb rich alloy at the tip of the quantum dots. Atomic force microscopy and transmission electron microscopy micrographs show increased quantum-dot height with Sb flux exposure. The evolution of the reflection high-energy electron-diffraction pattern suggests that the increased height is due to changes in the quantum-dot capping process related to the presence of segregated Sb atoms. These structural and compositional changes result in a shift of the room-temperature photoluminescence emission from 1.26 to 1.36 m accompanied by an order of magnitude increase in the room-temperature quantum-dot luminescence intensity.
International
Si
JCR
No
Title
PHYSICAL REVIEW B
ISBN
1550-235X
Impact factor JCR
0
Impact info
Volume
82
10.1103/PhysRevB.82.235316
Journal number
From page
235316 -1
To page
235316 -9
Month
ENERO
Ranking
Participants
  • Autor: Antonio Juan Rivera de Mena UPM
  • Autor: A.G. TABOADA Instituto de Microelectrónica de Madrid
  • Autor: A.M. SANCHEZ 2Department of Physics, University of Warwick, Coventry
  • Autor: A.M. BELTRAN Departamento de Ciencia de los Materiales e I. M. y Q. I., Facultad de Ciencias, Universidad de Cádiz,
  • Autor: M. BOZKURT 4COBRA Inter-University Research Institute, Department of Applied Physics, Eindhoven University of Technology,
  • Autor: D. ALONSO-ALVAREZ Instituto de Microelectrónica de Madrid, CNM (CSIC)
  • Autor: B. ALEN Instituto de Microelectrónica de Madrid, CNM (CSIC)
  • Autor: J.M. RIPALDA Instituto de Microelectrónica de Madrid, CNM (CSIC)
  • Autor: J.M. LLORENS Instituto de Microelectrónica de Madrid, CNM (CSIC)
  • Autor: J. MARTIN-SANCHEZ Instituto de Microelectrónica de Madrid, CNM (CSIC)
  • Autor: Y. GONZALEZ Instituto de Microelectrónica de Madrid, CNM (CSIC)
  • Autor: J.M. ULLOA COBRA Inter-University Research Institute, Department of Applied Physics, Eindhoven University of Technology,
  • Autor: J.M. GARCIA Instituto de Microelectrónica de Madrid, CNM (CSIC
  • Autor: S.I. MOLINA Departamento de Ciencia de los Materiales e I. M. y Q. I., Facultad de Ciencias, Universidad de Cádiz
  • Autor: P.M. KOENRAAD COBRA Inter-University Research Institute, Department of Applied Physics, Eindhoven University of Technology,
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Fusión Nuclear Inercial y Tecnología de fusión