Memorias de investigación
Ponencias en congresos:
First principles calculations of complex intermediate band materials for photovoltaic devices
Año:2010
Áreas de investigación
  • Fisica sb -- semiconductores y estructura de bandas
Datos
Descripción
An ab initio study of several compounds candidates to behave as intermediate band materials is presented. The use of these materials as the active element in solar cells is a promising way to enhance the photovoltaic efficiency. Indeed from this point of view, most interesting compounds are those whose host semiconductor presents a band-gap close to the optimum value of 2 eV. Chalcogenide compounds substituted by light transition metals are solid candidates to this end. While they are being further characterized and experimentally synthesized, another approach is being examined. It consists of using Si as host semiconductor. Ti implantation at concentrations several orders of magnitude above equilibrium solubility has shown a probable intermediate band material behavior, the origin of the intermediate band being related to levels of interstitial Ti. Optoelectronic Characterization of this material is completed. A novel possibility consists of combining chalcogen S implantation with boron. In this case preliminary results of electronic structure are shown.
Internacional
Si
Nombre congreso
2009 MRS Fall Meeting: Material Research Society Symposium: R - Advanced Nanostructured Solar Cells
Tipo de participación
960
Lugar del congreso
Boston (MA), EEUU
Revisores
Si
ISBN o ISSN
978-0-444-20500-1
DOI
Fecha inicio congreso
30/11/2010
Fecha fin congreso
04/12/2010
Desde la página
1
Hasta la página
6
Título de las actas
Mater. Res. Soc. Symp. Proc.
Esta actividad pertenece a memorias de investigación
Participantes
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Grupo de Investigación: Silicio y Nuevos Conceptos para Células Solares
  • Centro o Instituto I+D+i: Instituto de Energía Solar