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Descripción
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| The present invention is directed to a method implemented in a computer for the numerical simulation of a semiconductor device which contains one or more tunnel junctions and allows the simulation for all the working range of the tunnel junction. The method is based on a distributed model where the tunnel junction can be integrated in the simulation by means of distributed electronic circuits of a semiconductor device and, specially, of multijunction solar cells. The said method is used to circumvent the convergence problems existing so far and allows in particular the full description of the experimental behavior of the multijunction solar cells and, by extension, of any kind of semiconductor device containing tunnel junctions. | |
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Internacional
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Si |
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Estado
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Solicitada |
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Referencia Patente Prioritaria
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EP10382076.7 |
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En explotación
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Si |
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Fecha solicitud
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05/04/2010 |
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Titulares aparte de la UPM
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