Memorias de investigación
Artículos en revistas:
Lateral absorption measurements of InAs/GaAs quantum dots stacks: potential as intermediate band material for high efficiency solar cells
Año:2010
Áreas de investigación
  • Fisica sb -- semiconductores y estructura de bandas
Datos
Descripción
Prototypes based on InAs/GaAs QDs have been manufactured in order to realize the theoretically predicted high efficiency intermediate band solar cells (IBSCs). Unfortunately, until now, these prototypes have not yet demonstrated the expected increase in efficiency when compared with reference samples without IB material. One of the main arguments explaining this performance is the weak photon absorption in the QD-IB material, arising from a low density of QDs. In this work, we have analyzed the absorption coefficient of the IB material by developing a sample in an optical wave-guided configuration. This configuration allows us to illuminate the QDs laterally, increasing the path length for photon absorption. Using a multi-section metal contact device design, we were able to measure an absorption coefficient of ~100cm-1 around the band edge (~1eV) defined by the VB¿¿IB transition in InAs/GaAs QD-IB materials. This figure, and its influence on the IBSC concept, is analyzed for this system.
Internacional
Si
JCR del ISI
No
Título de la revista
Energy Procedia
ISSN
1876-6102
Factor de impacto JCR
0
Información de impacto
Volumen
2
DOI
Número de revista
Desde la página
27
Hasta la página
34
Mes
ENERO
Ranking
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Participantes
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Grupo de Investigación: Silicio y Nuevos Conceptos para Células Solares
  • Centro o Instituto I+D+i: Instituto de Energía Solar