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Abstract
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| Synchrotron-based X-ray fluorescence microscopy is ap- plied to study the evolution of iron silicide precipitates dur- ing phosphorus diffusion gettering and low-temperature annealing. Heavily Fe-contaminated ingot border material contains FeSi2 precipitates after rapid in-line P-diffusion firing, suggesting kinetically limited gettering in these re- gions. An impurity-to-efficiency (I2E) gettering model is developed to explain the results. The model demonstrates the efficacy of high- and medium-temperature processing on reducing the interstitial iron population over a range of process parameters available to industry. | |
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International
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Si |
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Congress
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35th IEEE Photovoltaic Specialists Conference |
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960 |
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Place
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Hawai |
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Reviewers
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Si |
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ISBN/ISSN
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978-1-4244-5891-2 |
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Start Date
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20/06/2010 |
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End Date
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25/06/2010 |
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From page
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430 |
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To page
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431 |
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Proceedings |