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Abstract
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| This paper studies the chemical composition of uplayers of the heterointerfaces GaAs/InGaP and InGaP/GaAs, grown by Metal Organic Vapor Pahse Epitaxy (MOVPE), after they were exposed to environmetal contamination, by means of -ray Photoelectrons Spectroscopy (XPS) by two methods: conventional XPS with Ar+ spettering ans by angle resolved XPS (ARXPS). We have determined the depth of the oxides in the superficial GaAs and InGaP layers, and we also have studied by ARXPS the profile of change of the chemical composition through the uplayer and its influence on the heterointerface. | |
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International
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Si |
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Congress
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22nd European Photovoltaic Solar Energy Conference |
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960 |
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Place
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Milán (Italia) |
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Reviewers
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Si |
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ISBN/ISSN
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3-936338-22-1 |
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Start Date
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03/09/2007 |
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End Date
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07/09/2007 |
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