Descripción
|
|
---|---|
After the successful implementation of a record performing dual-junction solar cell at ultra high concentration, in this paper we present the transition to a triple-junction device. The semiconductor structure of the solar cells is presented and the main changes in respect to a dual-junction design are briefly discussed. Cross-sectional TEM analysis of samples confirms that the quality of the triple-junction structures grown by MOVPE is good, revealing no trace of antiphase disorder, and showing flat, sharp and clear interfaces between the layers. Triple-junction solar cells manufactured on these structures have shown a peak efficiency of 36.2% at 700X, maintaining the efficiency over 35% from 300 to 1200 suns. With some changes in the structure and a fine tuning of its processing, efficiencies close to 40% at 1000 suns are envisaged. | |
Internacional
|
Si |
Nombre congreso
|
8th Spanish Conference on Electron Devices (CDE''2011), |
Tipo de participación
|
960 |
Lugar del congreso
|
Palma de Mallorca |
Revisores
|
Si |
ISBN o ISSN
|
978-1-4244-7865-1 |
DOI
|
|
Fecha inicio congreso
|
08/02/2011 |
Fecha fin congreso
|
11/02/2011 |
Desde la página
|
1 |
Hasta la página
|
4 |
Título de las actas
|
8th Spanish Conference on Electron Devices (CDE''2011), |