Observatorio de I+D+i UPM

Descripción
After the successful implementation of a record performing dual-junction solar cell at ultra high concentration, in this paper we present the transition to a triple-junction device. The semiconductor structure of the solar cells is presented and the main changes in respect to a dual-junction design are briefly discussed. Cross-sectional TEM analysis of samples confirms that the quality of the triple-junction structures grown by MOVPE is good, revealing no trace of antiphase disorder, and showing flat, sharp and clear interfaces between the layers. Triple-junction solar cells manufactured on these structures have shown a peak efficiency of 36.2% at 700X, maintaining the efficiency over 35% from 300 to 1200 suns. With some changes in the structure and a fine tuning of its processing, efficiencies close to 40% at 1000 suns are envisaged.
Internacional	Si
Nombre congreso	8th Spanish Conference on Electron Devices (CDE''2011),
Tipo de participación	960
Lugar del congreso	Palma de Mallorca
Revisores	Si
ISBN o ISSN	978-1-4244-7865-1
DOI
Fecha inicio congreso	08/02/2011
Fecha fin congreso	11/02/2011
Desde la página	1
Hasta la página	4
Título de las actas	8th Spanish Conference on Electron Devices (CDE''2011),

Esta actividad pertenece a memorias de investigación

• Autor: Enrique Barrigon Montañes (UPM)
• Autor: Elisa Garcia-Tabares Valdivieso (UPM)
• Autor: Ivan Garcia Vara (UPM)
• Autor: Ignacio Rey-Stolle Prado (UPM)
• Autor: Carlos Algora Del Valle (UPM)

• Creador: Grupo de Investigación: Semiconductores III-V
• Centro o Instituto I+D+i: Instituto de Energía Solar
• Departamento: Electrónica Física