Research Publications in journals:
High quality InAlN single layers lattice-matched to GaN grown by molecular beam epitaxy
Year:2011
Research Areas
Information
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Abstract
|
|
|---|---|
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International
|
Si |
|
JCR
|
Si |
|
Title
|
APPLIED PHYSICS LETTERS |
|
ISBN
|
0003-6951 |
|
Impact factor JCR
|
3,82 |
|
Impact info
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|
|
Volume
|
99 |
|
|
10.1063/1.3614434 |
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Journal number
|
3 |
|
From page
|
0 |
|
To page
|
3 |
|
Month
|
SIN MES |
|
Ranking
|
14/116 PHYSICS, APPLIED (SCI) |
Open Access publication
Participants
- Autor: z. gacevic UPM
- Autor: s. fernandez-garrido UPM
- Autor: j. m. rebled
- Autor: s. estrade
- Autor: f. peiro
- Autor: e. calleja UPM
Research Group, Departaments and Institutes related
- Centro o Instituto I+D+i: Instituto Universitario de Sistemas Optoelectrónicos y Microtecnología
- Grupo de Investigación: Grupo de Dispositivos Semiconductores del ISOM
- Departamento: Ingeniería Electrónica