Abstract
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|
---|---|
Relacionado con Línea de Investigación del Grupo GDS-ISOM | |
International
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No |
Congress
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Microscopy of Semiconducting Materials 2011 |
|
960 |
Place
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Cambridge, United Kingdom |
Reviewers
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Si |
ISBN/ISSN
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00-0000-000-0 |
|
0000 |
Start Date
|
04/04/2011 |
End Date
|
07/04/2011 |
From page
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0 |
To page
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0 |
|
STEM-HAADF-EELS and HRTEM assessment of cubic-hexagonal transitions and In-enrichment in InAlN/GaN Bragg reflectors grown by plasma-assisted Molecular Beam Epitaxy |