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Abstract
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|---|---|
| Relacionado con Línea de Investigación del Grupo GDS-ISOM | |
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International
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No |
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Congress
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Microscopy of Semiconducting Materials 2011 |
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960 |
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Place
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Cambridge, United Kingdom |
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Reviewers
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Si |
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ISBN/ISSN
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00-0000-000-0 |
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|
0000 |
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Start Date
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04/04/2011 |
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End Date
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07/04/2011 |
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From page
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0 |
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To page
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0 |
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STEM-HAADF-EELS and HRTEM assessment of cubic-hexagonal transitions and In-enrichment in InAlN/GaN Bragg reflectors grown by plasma-assisted Molecular Beam Epitaxy |