Memorias de investigación
Ponencias en congresos:
Optimizing Bottom Subcells for III-V-on-Si MultiJunction Solar Cells
Año:2011
Áreas de investigación
  • Tecnología electrónica y de las comunicaciones
Datos
Descripción
Dual-junction solar cells formed by a GaAsP or GaInP top cell and a silicon bottom cell seem to be attractive candidates to materialize the long sought-for integration of III-V materials on silicon for photovoltaic applications. Such integration would offer a cost breakthrough for photovoltaic technology, unifying the low cost of silicon and the efficiency potential of III-V multijunction solar cells. In this study, we analyze several factors influencing the performance of the bottom subcell of this dual-junction, namely, 1) the formation of the emitter as a result of the phosphorus diffusion that takes place during the prenucleation temperature ramp and during the growth of the III-V layers; 2) the degradation in surface morphology during diffusion; and 3) the quality needed for the passivation provided by the GaP layer on the emitter
Internacional
Si
Nombre congreso
37th IEEE PV Specialist Conference
Tipo de participación
960
Lugar del congreso
Seattle
Revisores
Si
ISBN o ISSN
978-1-4244-9965-6
DOI
Fecha inicio congreso
19/06/2011
Fecha fin congreso
24/06/2011
Desde la página
784
Hasta la página
789
Título de las actas
37th IEEE PV Specialist Conference
Esta actividad pertenece a memorias de investigación
Participantes
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Grupo de Investigación: Semiconductores III-V
  • Centro o Instituto I+D+i: Instituto de Energía Solar
  • Departamento: Electrónica Física