Abstract
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Dual-junction solar cells formed by a GaAsP or GaInP top cell and a silicon bottom cell seem to be attractive candidates to materialize the long sought-for integration of III-V materials on silicon for photovoltaic applications. Such integration would offer a cost breakthrough for photovoltaic technology, unifying the low cost of silicon and the efficiency potential of III-V multijunction solar cells. In this study, we analyze several factors influencing the performance of the bottom subcell of this dual-junction, namely, 1) the formation of the emitter as a result of the phosphorus diffusion that takes place during the prenucleation temperature ramp and during the growth of the III-V layers; 2) the degradation in surface morphology during diffusion; and 3) the quality needed for the passivation provided by the GaP layer on the emitter | |
International
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Si |
Congress
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37th IEEE PV Specialist Conference |
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960 |
Place
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Seattle |
Reviewers
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Si |
ISBN/ISSN
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978-1-4244-9965-6 |
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Start Date
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19/06/2011 |
End Date
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24/06/2011 |
From page
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784 |
To page
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789 |
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37th IEEE PV Specialist Conference |