Memorias de investigación
Communications at congresses:
Optimizing Bottom Subcells for III-V-on-Si MultiJunction Solar Cells
Year:2011
Research Areas
  • Electronic technology and of the communications
Information
Abstract
Dual-junction solar cells formed by a GaAsP or GaInP top cell and a silicon bottom cell seem to be attractive candidates to materialize the long sought-for integration of III-V materials on silicon for photovoltaic applications. Such integration would offer a cost breakthrough for photovoltaic technology, unifying the low cost of silicon and the efficiency potential of III-V multijunction solar cells. In this study, we analyze several factors influencing the performance of the bottom subcell of this dual-junction, namely, 1) the formation of the emitter as a result of the phosphorus diffusion that takes place during the prenucleation temperature ramp and during the growth of the III-V layers; 2) the degradation in surface morphology during diffusion; and 3) the quality needed for the passivation provided by the GaP layer on the emitter
International
Si
Congress
37th IEEE PV Specialist Conference
960
Place
Seattle
Reviewers
Si
ISBN/ISSN
978-1-4244-9965-6
Start Date
19/06/2011
End Date
24/06/2011
From page
784
To page
789
37th IEEE PV Specialist Conference
Participants
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Semiconductores III-V
  • Centro o Instituto I+D+i: Instituto de Energía Solar
  • Departamento: Electrónica Física