Observatorio de I+D+i UPM

Descripción
Dual-junction solar cells formed by a GaAsP or GaInP top cell and a silicon bottom cell seem to be attractive candidates to materialize the long sought-for integration of III-V materials on silicon for photovoltaic applications. Such integration would offer a cost breakthrough for photovoltaic technology, unifying the low cost of silicon and the efficiency potential of III-V multijunction solar cells. In this study, we analyze several factors influencing the performance of the bottom subcell of this dual-junction, namely, 1) the formation of the emitter as a result of the phosphorus diffusion that takes place during the prenucleation temperature ramp and during the growth of the III-V layers; 2) the degradation in surface morphology during diffusion; and 3) the quality needed for the passivation provided by the GaP layer on the emitter
Internacional	Si
Nombre congreso	37th IEEE PV Specialist Conference
Tipo de participación	960
Lugar del congreso	Seattle
Revisores	Si
ISBN o ISSN	978-1-4244-9965-6
DOI
Fecha inicio congreso	19/06/2011
Fecha fin congreso	24/06/2011
Desde la página	784
Hasta la página	789
Título de las actas	37th IEEE PV Specialist Conference

Esta actividad pertenece a memorias de investigación

• Autor: Elisa Garcia-Tabares Valdivieso (UPM)
• Autor: Ivan Garcia Vara (UPM)
• Autor: Diego Martín Martín (UPM)
• Autor: Ignacio Rey-Stolle Prado (UPM)

• Creador: Grupo de Investigación: Semiconductores III-V
• Centro o Instituto I+D+i: Instituto de Energía Solar
• Departamento: Electrónica Física