Memorias de investigación
Research Publications in journals:
Optimization of InGaAsN(Sb)/GaAs quantum dots for optical emission at 1.55 µm with low optical degradation
Year:2011
Research Areas
  • Physics chemical and mathematical,
  • Phisics,
  • Physics - Structure of materials,
  • Description
Information
Abstract
Low opticaldegradationinGaInAsN(Sb)/GaAsquantumdots(QDs)p?i?nstructuresemittingupto 1.55 mm ispresentedinthispaper.WeobtainemissionatdifferentenergiesbymeansofvaryingN contentfrom1to4%.Thesamplesshowalowphotoluminescence(PL)intensitydegradationofonly 1 orderofmagnitudewhentheyarecomparedwithpureInGaAsQDstructures,evenforanemission wavelengthaslargeas1.55 mm. Theoptimizationstudiesofthesestructuresforemissionat1.55 mmare reportedinthiswork.HighsurfacedensityandhomogeneityintheQDlayersareachievedfor50%In contentbyrapiddecreaseinthegrowthtemperatureaftertheformationofthenanostructures.Besides, the effectofNandSbincorporationintheredshiftandPLintensityofthesamplesisstudiedbypost- growth rapidthermalannealingtreatments.Asageneralconclusion,weobservethattheadditionofSbto QD withlowNmolefractionismoreefficienttoreach1.55 mm andhighPLintensitythanusinghighN incorporationintheQD.Also,thegrowthtemperatureisdeterminedtobeanimportantparameterto obtain goodemissioncharacteristics.Finally,wereportroomtemperaturePLemissionofInGaAsN(Sb)/ GaAs at1.4 mm.
International
Si
JCR
No
Title
Journal of Crystal Growth
ISBN
0022-0248
Impact factor JCR
0
Impact info
Volume
Journal number
From page
215
To page
218
Month
SIN MES
Ranking
Participants
  • Autor: M.Jose Milla Rodrigo UPM
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Grupo de Dispositivos Semiconductores del ISOM
  • Centro o Instituto I+D+i: Instituto Universitario de Sistemas Optoelectrónicos y Microtecnología
  • Departamento: Ingeniería Electrónica