Memorias de investigación
Communications at congresses:
Impact of N2 plasma power and duration on AlGaN/GaN HEMT
Year:2011

Research Areas
  • Electronic technology and of the communications,
  • Electric engineers, electronic and automatic (eil)

Information
Abstract
International
No
Congress
9th International conference on nitride semiconductors, ICNS
960
Place
Glasgow, Reino Unido
Reviewers
Si
ISBN/ISSN
Start Date
10/07/2011
End Date
15/07/2011
From page
To page
Participants

Research Group, Departaments and Institutes related
  • Creador: Departamento: Ingeniería Electrónica