Observatorio de I+D+i UPM
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INVESTIGADORES
ESTRUCTURAS DE I+D+I
ACTIVIDAD INVESTIGADORA
INNOVACIÓN
Investigador
Zarko Gacevic
Categoría Investigador
L.D. PRF.CONTR.DOCT.
Cargos actuales
SECRETARIO DE INSTITUTO.
Escuela UPM
E.T.S. DE INGENIEROS DE TELECOMUNICACION
Departamento:
INGENIERÍA ELECTRÓNICA
Centros/Institutos I+D+i
INST.SIST.OPTOELECT. MICROTECNOL. "ISOM"
Area Conocimiento
TECNOLOGIA ELECTRONICA
Grupo de Investigación:
Grupo de Dispositivos Semiconductores del ISOM
Email (Directorio UPM)
zarko.gacevic
upm.es
Teléfono (Directorio UPM)
910672209
Datos de Memorias relacionados
Proyectos de I+D+i y generación de recursos
8 Proyectos de I+D+i
1: (2007)
"Nanoestructuras de Semiconductores como Componentes para la Información Cuántica (NANIC)" Min. Educación y Ciencia, Acción Estratégica en Nanotecnología. NAN2004-09109-C04-02. (2005-2008).
2: (2008)
Desarrollo de Micro y Nanocavidades incluyendo regiones activas de Puntos Cuánticos de Nitruros-III: Aplicaciones a emisores de luz en azul y UV (QUADONIC)
3: (2008)
Fabricación de substratos nanoestructurados de SiO2 para crecimiento epitaxial de emisores eficientes de Luz Blanca con Nitruros del Grupo-III
4: (2008)
Nanoestructuras de semiconductores como componentes para la información cuántica
5: (2011)
Células solares de InGaN mejoradas con plasmones superficiales y fabricadas por MBE sobre sustratos de Silicio y capas de GaN (SPINSOL)
6: (2011)
SMASH: Smart nanostructured semiconductors for energy saving light solutions
7: (2012)
GECCO: 3D GaN for High Efficiency Solid State Lighting
8: (2019)
GANQUBIT: Nanohilos basados en GaN para sistemas de información cuántica y circuitos digitales
Formación de Investigadores y Movilidad
5 Estancias y sabáticos recogidos en programas oficiales
1: (2009)
D. Zarko Gacevic "CEA-GRENOBLE, CEA/Grenoble, Department of Fundamental Research on Condensed Matter" Grenoble, France 2009 13 week/s
2: (2016)
Estancia del Dr. Zarko Gacevic en University of Belgrade
3: (2017)
Estancia breve de Nenad Vukmirovic.- Universidad de Belgrado, dentro del programa Erasmus+
4: (2017)
Estancia, Erasmus, Master Thesis.- Sanja Djurdjic
5: (2017)
Estancia, Erasmus, Master Thesis.- Sanja Djurdjic programa de movilidad Erasmus+ Mobility Agreement Staff Mobility for teaching.
3 Tesis Doctorales
1: (2012)
Bloques constituyentes de microcavidades planares de nitruros-III crecidos por epitaxia de haces moleculares
2: (2016)
Investigations on III-Nitrides nanostructures: application to Renewable Energies and Bio-Sensing
3: (2017)
InxGa1-xN layers, nanowires, and nanodots on Silicon for clean energy applications
Difusión de Resultados de Investigación
48 Artículos en revistas
1: (2008)
A comprehensive diagram to grow InAlN alloys by plasma-assisted molecular beam epitaxy
2: (2008)
Growth and characterization of lattice-matched InAlN/GaN Bragg reflectors grown by plasma-assisted Molecular Beam Epitaxy
3: (2009)
Z. GACEVIC, S. FERNÁNDEZ-GARRIDO, E. CALLEJA, E. LUNA, A. TRAMPERT "Growth and characterization of lattice-matched InAlN/GaN Bragg reflectors grown by plasma assisted molecular beam epitaxy" Physica status Solidi (c), 6, S2, S643-S645 (2009)
4: (2010)
E. CALLEJA, M.A. SÁNCHEZ-GARCIA, P. LEFEBVRE, J.RISTIC, F. BARBAGINI, A. BENGOECHEA, Z. GACEVIC. "Los LEDs también iluminarán las ciudades" Revista UPM, 16, 11-15 (2010)
5: (2010)
InAlN/GaN Bragg reflectors grown by plasma-assisted molecular beam epitaxy
6: (2010)
Z. GACEVIC, S. FERNÁNDEZ-GARRIDO, D. HOSSEINI, S. ESTRADE, F. PEIRÓ, E. CALLEJA ''InAlN/GaN Bragg reflectors grown by plasma-assisted molecular beam Epitaxy'' Journal of Applied Physics, 108, 113117 (2010).
7: (2011)
High quality InAlN single layers lattice-matched to GaN grown by molecular beam epitaxy
8: (2011)
Internal quantum efficiency of III-nitride quantum dot superlattices grown by plasma-assisted molecular-beam epitaxy
9: (2012)
A comprehensive diagram to grow metal-polarity InGaN alloys by molecular beam epitaxy
10: (2012)
Optoelectronic Properties of InAlN/GaN Distributed Bragg Reflector Heterostructure Examined by Valence
11: (2013)
A comprehensive diagram to grow (0001)InGaN alloys by molecular beam epitaxy
12: (2013)
A comprehensive diagram to grow (0001)InGaN alloys by molecular beam epitaxy
13: (2013)
Insight into high-reflectivity AlN/GaN Bragg reflectors with spontaneously formed (Al,Ga)N transient layers at the interfaces
14: (2013)
Insight into high-reflectivity AlN/GaN Bragg reflectors with spontaneously formed (Al,Ga)N transient layers at the interfaces
15: (2013)
Insight into the Compositional and Structural Nano Features of AlN/GaN DBRs by EELS-HAADF
16: (2013)
Insight into the Compositional and Structural Nano Features of AlN/GaN DBRs by EELS-HAADF
17: (2013)
Q-factor of (In,Ga)N containing III-nitride microcavity grown by multiple deposition techniques
18: (2013)
Q-factor of (In,Ga)N containing III-nitride microcavity grown by multiple deposition techniques
19: (2013)
Structural and morphological studies on wet-etched InAlGaN barrier HEMT structures
20: (2013)
Structural and morphological studies on wet-etched InAlGaN barrier HEMT structures
21: (2014)
Analysis of InAl(Ga)N/GaN wet-etching by structural, morphological and electrical methods
22: (2015)
Blue-to-green single photons from InGaN/GaN dot-in-a-nanowire ordered arrays
23: (2015)
Crystallographically uniform arrays of ordered (In)GaN nanocolumns
24: (2015)
Dynamic control of the optical emission from GaN/InGaN nanowire quantum dots by surface acoustic waves
25: (2015)
Formation Mechanisms of GaN Nanowires Grown by Selective Area Growth Homoepitaxy
26: (2015)
Ordered arrays of InGaN/GaN dot-in-a-wire nanostructures as single photon emitters
27: (2015)
Stacked GaAs(Sb)(N)-capped InAs/GaAs quantum dots for enhanced solar cell efficiency
28: (2016)
A top-gate GaN nanowire metal-semiconductor field effect transistor with improved channel electrostatic control
29: (2016)
Comparative study of single InGaN layers grown on Si(111) and GaN(0001) templates: The role of surface wetting and epitaxial constraint
30: (2016)
Impact of alloyed capping layers on the performance of In As quantum dot solar cells
31: (2016)
Impact of alloyed capping layers on the performance of In As quantum dot solar cells
32: (2016)
Improving optical performance of GaN nanowires grown by selective area growth homoepitaxy: Influence of substrate and nanowire dimensions
33: (2016)
Influence of composition, strain, and electric field anisotropy on different emission colors and recombination dynamics from InGaN nanodisks in pencil-like GaN nanowires
34: (2016)
Influence of composition, strain, and electric field anisotropy on different emission colors and recombination dynamics from InGaN nanodisks in pencil-like GaN nanowires
35: (2016)
Quantitative parameters for the examination of InGaN QW multilayers by low-loss EELS
36: (2016)
Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells
37: (2016)
Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells
38: (2016)
Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells
39: (2016)
Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells
40: (2017)
Emission of Linearly Polarized Single Photons from Quantum Dots Contained in Nonpolar, Semipolar, and Polar Sections of Pencil-Like InGaN/GaN Nanowires
41: (2017)
Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells
42: (2017)
Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells
43: (2018)
Effective Refractive-Index Approximation: A Link between Structural and Optical Disorder of Planar Resonant Optical Structures
44: (2018)
Formation mechanisms of single-crystalline InN quantum dots fabricated via droplet epitaxy
45: (2018)
Unvealing GaN Polytypism in Distributed GaN/InAlN Bragg Reflectors Through HRTEM Image Simulation
46: (2019)
Electron Tomography of Pencil-Shaped GaN/(In,Ga)N Core-Shell Nanowires
47: (2019)
(S)TEM methods contributions to improve the fabrication of InGaN thin films on Si, and InN nanostructures on flat Si and rough InGaN
48: (2019)
Unravelling the polarity of InN quantum dots using a modified approach of negative-spherical-aberration imaging
2 Capítulos de libros
1: (2017)
Ga(In)N nanowires grown by Molecular Beam Epitaxy: from quantum light sources to nano-transistors
2: (2017)
The Impact of Alloyed Capping Layers on the Performance of InAs/GaAs Quantum Dot Solar Cells
4 Conferencias invitadas en congresos
1: (2015)
Modified InAs/GaAs quantum dots for enhanced solar cell efficiency
2: (2015)
Novel optoelectronics devices
3: (2015)
Selective Area Growth of InGaN/GaN Nanocolumnar structures for Classical and Quantum Light Sources
4: (2019)
Ga(In)N nanowires grown by MBE: nanotransistors and quantum light emitters
5 Cursos, seminarios y tutoriales
1: (2010)
ZARKO GACEVIC.- "Systematic study of internal quantum efficiency mechanism in III-nitride Quantum Dots". 22/01/2010 ISOM-ETSIT-UPM, Madrid (España)
2: (2012)
Zarko Gacevic.- "Constituent Blocks of III-Nitride Microcavities Grown by Molecular Beam Epitaxy"
3: (2016)
Curso impartido por el Dr. Zarko Gacevic en University of Belgrade
4: (2017)
Seminario del Ponente Dr. Nenad Vukmirovic: Simulation Insights into Electronic Properties of Organic Semiconductors
5: (2019)
Modelling and global optimization of MIR-THz quantum cascade lasers
54 Ponencia en Congresos
1: (2008)
A diagram to grow InAlN layers on (0001)GaN by plasma-assisted molecular beam epitaxy International workshop on nitrides Semiconductors 2008, 6-10 de Octubre 2008 Montreux, (Suiza), 2008
2: (2008)
Growth and characterization of lattice-matched InAlN/GaN Bragg reflectors grown by plasma-assisted molecular beam epitaxy International workshop on nitrides Semiconductors 2008, 6-10 de Octubre 2008. Conferences Proceedings. Montreux, (Suiza), 2008
3: (2009)
S. FERNANDEZ-GARRIDO, Z. GACEVIC, E. CALLEJA, A. REDONDO-CUBERO, R. GAGO, E.MUÑOZ "A Comprehensive Diagram to Grow Inaln Alloys By Plasma-Assisted Molecular Beam Epitaxy" 15th European Molecular Beam Epitaxy Workshop Zakopane (Poland), 2009
4: (2009)
Z. GACEVIC, S. FERNÁNDEZ-GARRIDO, E. CALLEJA, E.LUNA, A. TRAMPERT "Growth and characterization of lattice-matched InAlN/GaN Bragg reflectors grown by plasma assisted molecular beam epitaxy" 15th European Molecular Beam Epitaxy Workshop Zakopane (Poland), 2009
5: (2009)
Z. GACEVIC, S. FERNÁNDEZ-GARRIDO, E. CALLEJA "Current status and further challenge in MBE growth of lattice-matched InAlN/GaN Bragg reflectors" 8th International Conference on Nitride Semiconductors Jeju (Korea), 2009
6: (2009)
Z. GACEVIC, S. FERNÁNDEZ-GARRIDO, E. CALLEJA "New approach to grow high reflectivity Al(Ga)N bragg reflectors by plasma-assited molecular beam epitaxy" 8th International Conference on Nitride Semiconductors Jeju (Korea), 2009
7: (2011)
A. Eljarrat, Z. Gacevic, S. Fernández-Garrido, E. Calleja, C. Magén, S. Estradé, F. Peiró "Optical and structural properties of InAlN/GaN Bragg reflectors examined by transmission electron microscopy and electron energy loss spectroscopy"
8: (2011)
Growth and characterization of InGaN/GaN quantum dots for violet/blue applications
9: (2011)
Growth and characterization of InGaN/GaN quantum dots for violet/blue applications
10: (2011)
Growth and characterization of InGaN/GaN quantum dots for violet/blue applications
11: (2011)
InN/GaN heterojunction electrical behavior
12: (2011)
J.M. Ulloa, M. Montes, K. Yamamoto, Z. Gacevic, A. Guzmán, A. Hierro, M. Bozkurt, P.M.Koenraad, D. Fernández, D. González and D. Sales "Tuning the size, strain and band offsets of InAs/GaAs quantum dots through a thin GaAs(Sb)(N) capping layer"
13: (2011)
Optical and structural properties of InAlN/GaN Bragg reflectors examined by transmission electron microscopy and electron energy loss spectroscopy
14: (2011)
STEM-HAADF-EELS and HRTEM assessment of cubic-hexagonal transitions and In-enrichment in InAlN/GaN Bragg reflectors grown by plasma-assisted Molecular Beam Epitaxy
15: (2011)
Structural properties of InAlN single layers nearly latice-matched to GaN grown by plasma assisted molecular beal epitaxy
16: (2011)
Structural properties of InAlN single layers nearly latice-matched to GaN grown by plasma assisted molecular beal epitaxy
17: (2011)
Tomography of multilayered materials for optoelectronic applications
18: (2011)
Transmission Electron Microscopy and Electron Energy Loss Spectroscopy investigations of InAlN/GaN Bragg reflectors grown by plasma-assisted Molecular Beam Epitaxy
19: (2011)
Transmission Electron Microscopy and Electron Energy Loss Spectroscopy investigations of InAlN/GaN Bragg reflectors grown by plasma-assisted Molecular Beam Epitaxy
20: (2011)
Z. Gacevic, P. Lefebvre, F. Bertram, G. Schmidt, P. Veit, J. Christen, and E. Calleja "Growth and characterization of InGaN/GaN quantum dots for violet/blue applications"
21: (2011)
Z. Gacevic, S. Fernández-Garrido, E. Calleja, D. Hosseini, S. Estrade and F. Peiró "Structural properties of InAlN single layers nearly latice-matched to GaN grown by plasma assisted molecular beal epitaxy"
22: (2012)
A comprehensive diagram to grow (0001) InGaN alloys by molecular beam epitaxy
23: (2012)
AlN/GaN DBR layer low-loss EELS-HAADF compositional mapping
24: (2012)
EELS-HAADF combination for characterization of a new AlN/GaN DBRs growth method
25: (2012)
EELS-HAADF spectrum imaging for characterization of (AlGa)N multilayer heterostructures
26: (2012)
Electrical and Surface Characterization of Wet-etched InAlN/AlN/GaN HEMTs
27: (2012)
Electrical and surface characterization of wet-etched InAlN/AlN/GaN HEMTs
28: (2012)
Hybrid MBE/MOVPE grown III-nitride microcavity
29: (2012)
Structural and morphological studies on wet-etched InAlGaN barrier HEMT structures
30: (2012)
Structural characterization of wet-etched quaternary InAlGaN barrier HEMT structures
31: (2013)
A Simple Method to Model Bragg Reflectors with Transient Layers Formed at the Interfaces
32: (2013)
Electron Energy Loss Spectroscopy for the analysis of AlN/GaN interfaces in MBE grown distributed Bragg Reflectors
33: (2013)
Insight into AlN/GaN Bragg reflectors with spontaneously formed AlGaN transient layers at the interfaces
34: (2013)
Insight into AlN/GaN Bragg reflectors with spontaneously formed AlGaN transient layers at the interfaces
35: (2013)
Localized emission from the apex of GaN/(In,Ga)N/GaN
36: (2013)
Selective area growth of In(Ga)N/GaN nanocolumns by molecular beam epitaxy on Si(111): from ultraviolet to infrared emission
37: (2013)
Spectroscopy for the analysis of AlN/GaN interfaces in MBE grown distributed Bragg Reflectors
38: (2014)
Stacked GaAsSbN-capped InAs/GaAs quantum dots for enhanced solar cell efficiency
39: (2014)
XRD analysis of InGaN uniform layers grown on Si (111) without any buffer layers and on Sapphire
40: (2015)
A two-color emitting ingan nanodisk as a site-controlled source of classical and quantum light
41: (2015)
Formation Mechanisms of GaN nanowires grown by slective area growth homoepitaxy
42: (2015)
GaAs(Sb)(N)-caped InAs/GaAs Quantum Dots for enhanced solar cell efficiency
43: (2015)
InGaN-on-Si for solar water splitting: compact layers, nanowalls and nanocolumns
44: (2015)
Stacked GaAs(Sb)(N)-capped InAs/GaAs quantum dots for enhanced solar cell effiiency
45: (2015)
Type-I and Type-II InAs/GaAs Quantum Dot solar cells with a GaAsSb capping layer
46: (2015)
Valence EELS analysis of multiple InGaN-QW structure for electronic properties
47: (2016)
Dynamic acoustic control of single photon emission from III-Nitride nanowire heterostructures
48: (2016)
Fabrication on III-nitride dot-ín-a-wire single photon sources
49: (2016)
Nonpolar, semipolar and polar III-nitride dot-in-a-wire sources of linearly polarized single photons
50: (2016)
Photoelectrochemical properties of full composition InxGa1-xN/Si photoanodes
51: (2016)
Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells
52: (2016)
Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells
53: (2017)
Emission of linearly polarized single photons from quantum dots contained in nonpolar, semipolar and polar sections of pencil-Like InGaN/GaN Nanowires
54: (2017)
Growth of self-assembled AIN nanowires on SiO2/Si substrates
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