Observatorio de I+D+i UPM
• ESPAÑOL
• ENGLISH
INVESTIGADORES
ESTRUCTURAS DE I+D+I
ACTIVIDAD INVESTIGADORA
INNOVACIÓN
Investigador
Pierre Lefebvre .
Categoría Investigador
L.D. PRF.CONTR.DOCT. O.A.
Escuela UPM
INST.SIST.OPTOELECT. MICROTECNOL. "ISOM"
Departamento:
INGENIERIA ELECTRONICA (ANTIGUO)
Area Conocimiento
TECNOLOGIA ELECTRONICA
Grupo de Investigación:
Sin grupo de investigación
Email (Directorio UPM)
pierre.lefebvre
upm.es
Investigador no vigente en la UPM
Datos de Memorias relacionados
Proyectos de I+D+i y generación de recursos
2 Proyectos de I+D+i
1: (2011)
SMASH: Smart nanostructured semiconductors for energy saving light solutions
2: (2011)
SNB09: Substrate nanopatterning by e-beam lithography to growth ordered arrays of III-Nitride nanodetectors: application to IR detectors, emitters, and new Solar Cells
Difusión de Resultados de Investigación
7 Artículos en revistas
1: (2010)
E. CALLEJA, M.A. SÁNCHEZ-GARCIA, P. LEFEBVRE, J.RISTIC, F. BARBAGINI, A. BENGOECHEA, Z. GACEVIC. "Los LEDs también iluminarán las ciudades" Revista UPM, 16, 11-15 (2010)
2: (2010)
P. CORFDIR, P. LEFEBVRE, L. BALET, S. SONDEREGGER, A. DUSSAIGNE, T. ZHU, D. MARTIN, J.-D. GANIÈRE, N. GRANDJEAN, B. DEVEAUD-PLÉDRAN "Excitons recombination dynamics in a-plane (Al,Ga)N/GaN quantum wells probed by picosecond photo and cathodoluminescence" Journal of Applied Physics 107, 043524 (2010)
3: (2011)
Emission control of InGaN nanocolumns grown by molecular-beam epitaxy on Si(111) substrates
4: (2011)
Intrinsic dynamics of weakly and strongly confined excitons in nonpolar nitride-based heterostructures
5: (2011)
Radiative defects in GaN nanocolumns: Correlation with growth conditions and sample morphology
6: (2013)
Optical properties and microstructure of 2.02-3.30 eV ZnCdO nanowires: Effect of thermal annealing
7: (2014)
VIS-UV ZnCdO/ZnO multiple quantum well nanowires and the quantification of Cd diffusion
2 Conferencias invitadas en congresos
1: (2010)
E. CALLEJA, A. BENGOECHEA-ENCABO, J. GRANDAL, S. FERNÁNDEZ, J. RISTIC, M.A. SANCHEZ-GARCÍA, F. BARBAGINI, P. LEFEBVRE, J.M. CALLEJA, E. GALLARDO, E.LUNA, A. TRAMPERT, U.JAHN. "Spontaneous and ordered growth of III-N nanocolumns by MBE: growth mechanisms and applications to Optoelectronic Devices". International Workshop on Nitride Semiconductors (IWNS 2010) Tampa, Florida (USA) 2010
2: (2010)
P. LEFEBVRE "Internal efficiency of LEDs: An application of Quantum Mechanics". ForumLED Lyon (France) 2010
11 Ponencia en Congresos
1: (2010)
A. BENGOECHEA, J. GRANDAL, S. FERNANDEZ-GARRIDO, M.A. SANCHEZ-GARCIA, F. BARBAGINI, P. LEFEBVRE, E. CALLEJA, E. LUNA, A. TRAMPERT. "Selective area growth of GaN nanocolumns by rf-plasma-assisted MBE". 16th International MBE Conference Berlin (Germany) 2010
2: (2010)
P. CORFDIR, A. DUSSAIGNE, P. LEFEBVRE, H. TEISSEYRE, J.-D. GANIÈRE, N. GRANDJEAN, B. DEVEAUD-PLÉDRAN "Radiative lifetimes of localized and free excitons in homoepitaxial non-polar (Al,Ga)N/GaN single quantum well". 39 th International School and Conference on the Physics of Semiconductors, Jaszowiec (Poland), 2010
3: (2010)
P. CORFDIR, A. DUSSAIGNE, P. LEFEBVRE, H. TEISSEYRE, T. SUSKI, I. GRZEGORY, J.D. GANIÈRE, N. GRANDJEAN, B. DEVEAUD-PLÉDRAN "Radiative Recombination Limited Lifetimes in a-plane (Al,Ga)N/GaN single quantum wells grown on GaN" Int. Workshop on Nitride Semiconductors. IWN 2010 Tampa (USA), 2010
4: (2010)
P. CORFDIR, D. SIMEONOV, E. FELTIN, J.-F. CARLIN, P. LEFEBVRE, N. GRANDJEAN, B. DEVEAUD-PLÉDRAN, J.-D. GANIERE. "Time resolved cathodoluminescence on InGaN/GaN quantum wells grown on non-coalesced ELO-GaN". 10th Int. Workshop on Beam Injection Assessment of Microstructures in Semicond - BIAMS 2010 Halle (Germany), 2010
5: (2010)
P. CORFDIR, P. LEFEBVRE, A. DUSSAIGNE, J. RISTIC, T. ZHU, D. MARTIN, N. GRANDJEAN, B. DEVEAUD-PLÉDRAN, J.-D. GANIÈRE. "Exciton relaxation and recombination mechanisms in a-plane GaN probed by time-resolved cathodoluminescence" 10th Int. Workshp on Beam Injection Assessment of Microstructures in Semicond - BIAMS 2010 Halle (Germany), 2010
6: (2010)
P. CORFDIR, P. LEFEBVRE, A. DUSSAIGNE, L. BALET, S. SONDEREGGER, T. ZHU, D. MARTIN, J.-D. GANIÈRE, N. GRANDJEAN, B. DEVEAUD-PLÉDRAN "Exciton dynamics in a-plane (Al,Ga)N/GaN single quantum wells grown by molecular beam epitaxy on ELO-GaN" Int. Workshop on Nitride Semiconductors. IWN 2010 Tampa (USA), 2010
7: (2010)
P. CORFDIR, P. LEFEBVRE, J.-D. GANIÈRE, B. DEVEAUD-PLÉDRAN. "Distortion of donor properties in III-nitride based nano-scale systems" Int. Workshop on Nitride Semiconductors . IWN 2010 Tampa (USA), 2010
8: (2010)
P. LEFEBVRE, S. ALBERT, J. RISTIC, M.-A. SÁNCHEZ-GARCÍA, E. CALLEJA. "Carrier localization and surface effects in InGaN nanocolumns grown by plasma-assisted molecular beam epitaxy" Int. Workshop on Nitride Semiconductors - IWN 2010 Tampa (USA), 2010
9: (2010)
S. ALBERT, J. GRANDAL, M.A. SANCHEZ-GARCIA, P. LEFEBVRE, J. RISTIC, E. CALLEJA, A. VILALTA-CLEMENTE, B. LACROIX, P. RUTERANA, E. LUNA, U. JAHN, A. TRAMPERT. "MBE growth and characterization of InN/InGaN thin films and nanostructures on GaN templates and Si(111) substrates" 16th International MBE Conference Berlin (Germany) 2010
10: (2010)
S. FERNÁNDEZ-GARRIDO, J. GRANDAL, P. LEFEBVRE, M.A. SÁNCHEZ-GARCÍA, E.CALLEJA. "GaN nanocolumns grown on Si(111) by plasma-assisted MBE: Correlation of structural and optical properties with growth parameters". Int. Symp. on Growth of III Nitrides (ISGN3) Montpellier (France) 2010
11: (2011)
Growth and characterization of InGaN/GaN quantum dots for violet/blue applications
• TOMA DE DATOS DE MEMORIAS Y CV
• UPM.ES
S2i 2023 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNPACTO (IPT-020000-2010-22)
