Observatorio de I+D+i UPM
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INVESTIGADORES
ESTRUCTURAS DE I+D+I
ACTIVIDAD INVESTIGADORA
INNOVACIÓN
Investigador
Tommaso Brazzini .
Categoría Investigador
CONTRATADO CON CARGO A PROYECTO UPM-OTT
Escuela UPM
INST.SIST.OPTOELECT. MICROTECNOL. "ISOM"
Departamento:
NO ADSCRITOS/AS A DEPARTAMENTO EN EL DIA DE LA FECHA
Area Conocimiento
SIN AREA DE CONOCIMIENTO
Grupo de Investigación:
Sin grupo de investigación
Email (Directorio UPM)
t.brazzini
alumnos.upm.es
Investigador no vigente en la UPM
Datos de Memorias relacionados
Proyectos de I+D+i y generación de recursos
1 Proyectos de I+D+i
1: (2011)
RAINBOW: High quality and intrinsic Properties of InN and indium rich Nitride Alloys
Formación de Investigadores y Movilidad
5 Estancias y sabáticos recogidos en programas oficiales
1: (2012)
ERASMUS MUNDUS: Doctorado DONG JOO CHOI
2: (2012)
ERASMUS MUNDUS: Doctorado DONG JOO CHOI
3: (2012)
ESTANCIA INVESTIGADORA DE TOMMASO BRAZZINI.-The study of basic properties unintentionally-doped self-assembled InN nanocolumns.
4: (2012)
The study of basic properties unintentionally-doped self-assembled InN nanocolumns.
5: (2014)
Estancia de Tommaso Brazzini
1 Tesis Doctorales
1: (2013)
Properties and applications of high electron density structures based on InN and related compounds.- Doctorado Internacional-PhD Degree with International Honourable Mention)
Difusión de Resultados de Investigación
15 Artículos en revistas
1: (2011)
Volume charge carrier number fluctuations probed by low frequency noise measurements in InN layers
2: (2012)
Investigation of AlInN barrier ISFET structures with GaN capping for pH detection
3: (2012)
Nanocrack-induced leakage current in AlInN/AlN/GaN
4: (2012)
Nanocrack-induced leakage current in AlInN/AlN/GaN
5: (2012)
Role of surface trap states on two-dimensional electron gas density in InAlN/AlN/GaN heterostructures
6: (2012)
Role of surface trap states on two-dimensional electron gas density in InAlN/AlN/GaN heterostructures
7: (2013)
Impact of AlN Spacer on Metal-Semiconductor-Metal Pt-InAlGaN/GaN Heterostructures for Ultraviolet Detection
8: (2013)
Impact of AlN Spacer on Metal?Semiconductor?Metal Pt?InAlGaN/GaN Heterostructures for Ultraviolet Detection
9: (2013)
Investigation of AlInN barrier ISFET structures with GaN capping for pH detection
10: (2013)
Investigation of AlInN barrier ISFET structures with GaN capping for pH detection
11: (2013)
Structural and morphological studies on wet-etched InAlGaN barrier HEMT structures
12: (2013)
Structural and morphological studies on wet-etched InAlGaN barrier HEMT structures
13: (2014)
Analysis of InAl(Ga)N/GaN wet-etching by structural, morphological and electrical methods
14: (2014)
Influence of fabrication steps on optical and electrical properties of InN thin films
15: (2015)
Electroreflectance characterization of AlInGaN/GaN high-electron mobility heterostructures
1 Cursos, seminarios y tutoriales
1: (2013)
Properties and applications of high electron density structures based on InN and related compounds
16 Ponencia en Congresos
1: (2010)
T. BRAZZINI, J. GRANDAL, A. PRADO, A. VILLATA-CLEMENTE, F. CALLE. "InN-based material devices for infrared photodetection". Proc. 19th European Workshop on Heterostructures Technology Crete (Greece) 2010
2: (2011)
InN-based MIS rectification device
3: (2011)
InN/GaN heterojunction electrical behavior
4: (2012)
Electrical and Surface Characterization of Wet-etched InAlN/AlN/GaN HEMTs
5: (2012)
Electrical and surface characterization of wet-etched InAlN/AlN/GaN HEMTs
6: (2012)
Investigation of AlInN barrier ISFET structures with GaN capping for pH detection
7: (2012)
Investigation of Al1xInxN barrier ISFET structures with GaN capping on silicon substrates for pH detection
8: (2012)
On Surface trap and extended dislocation network in III-nitride Heterostructures
9: (2012)
Photocurrent analysis of MSM InAlGaN/GaN heterostructure photodetectors
10: (2012)
Photoresponse of metal-semiconductor-metal InAlGaN/GaN structures
11: (2012)
Structural and morphological studies on wet-etched InAlGaN barrier HEMT structures
12: (2012)
Structural characterization of wet-etched quaternary InAlGaN barrier HEMT structures
13: (2013)
Gd2O3 gate dielectric for AlGaN/GaN HEMTs
14: (2013)
Nitride 2DEG-based devices for UV photodetection
15: (2013)
Nitride 2DEG-based devices for UV photodetection
16: (2013)
PAMBE grown InN layers electrical conduction by low frequency noise technique
• TOMA DE DATOS DE MEMORIAS Y CV
• UPM.ES
S2i 2023 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNPACTO (IPT-020000-2010-22)
