Observatorio de I+D+i UPM
• ESPAÑOL
• ENGLISH
INVESTIGADORES
ESTRUCTURAS DE I+D+I
ACTIVIDAD INVESTIGADORA
INNOVACIÓN
Investigador
Steven Albert .
Categoría Investigador
CONTRATADO DE INVESTIGACION FUNDACION
Escuela UPM
E.T.S. DE INGENIEROS DE TELECOMUNICACION
Departamento:
I.SIST.OPTOELECT. MICROTECN. "ISOM"
Area Conocimiento
SIN AREA DE CONOCIMIENTO
Grupo de Investigación:
Sin grupo de investigación
Email (Directorio UPM)
albert.steven
alumnos.upm.es
Datos de Memorias relacionados
Proyectos de I+D+i y generación de recursos
1 Proyectos de I+D+i
1: (2011)
RAINBOW: High quality and intrinsic Properties of InN and indium rich Nitride Alloys
Formación de Investigadores y Movilidad
1 Tesis Doctorales
1: (2015)
Self assembled and ordered group III nitride nanocolumnar structures for light emitting applications
Difusión de Resultados de Investigación
38 Artículos en revistas
1: (2011)
Critical aspects of substrate nanopatterning for the ordered growth of GaN nanocolumns
2: (2011)
Emission control of InGaN nanocolumns grown by molecular-beam epitaxy on Si(111) substrates
3: (2011)
Selective area growth of a- and c-plane GaN nanocolumns by molecular beam epitaxy using colloidal nanolithography
4: (2012)
E-beam nano-patterning for the ordered growth of GaN/InGaN nanorods
5: (2012)
Fabrication of GaN nanorods by focused ion beam
6: (2012)
Ordered gan/ingan nanorods arrays grown by molecular beam epitaxy for phosphor-free white light emission
7: (2012)
Oxygen photo-adsorption related quenching of photoluminescence in group-III nitride nanocolumns
8: (2012)
Plasmon excitation in electron energy-loss spectroscopy for determination of indium concentration in (In,Ga)N/GaN nanowires
9: (2012)
Selective area growth and characterization of InGaN nano-disks implemented in GaN nanocolumns with different top morphologies
10: (2012)
Selective area growth of a- and c-plane GaN nanocolumns by molecular beam epitaxy using colloidal nanolithography
11: (2012)
Selective area growth of a- and c-plane GaN nanocolumns by molecular beam epitaxy using colloidal nanolithography
12: (2013)
Monolithic integration of InGaN segments emitting in the blue, green, and red spectral range in single ordered nanocolumns
13: (2013)
Monolithic integration of InGaN segments emitting in the blue, green, and red spectral range in single ordered nanocolumns (vol 102, 181103, 2013)
14: (2013)
Selective area growth and characterization of GaN nanocolumns, with and without an InGaN insertion, on semi-polar (11-22) GaN templates
15: (2013)
Selective area growth and characterization of GaN nanocolumns, with and without an InGaN insertion, on semi-polar (11-22) GaN templates
16: (2013)
Selective area growth and characterization of InGaN nanocolumns for phosphor-free white light emission
17: (2013)
Selective area growth and characterization of InGaN nanocolumns for phosphor-free white light emission
18: (2013)
Selective area growth of In(Ga)N/GaN nanocolumns by molecular beam epitaxy on GaN-buffered Si(111): from ultraviolet to infrared emission
19: (2013)
Selective area growth of In(Ga)N/GaN nanocolumns by molecular beam epitaxy on GaN-buffered Si(111): from ultraviolet to infrared emission
20: (2014)
Advances on MBE Selective Area Growth of III-Nitride nanostructures: from nanoLEDs to pseudo substrates
21: (2014)
Growth of InGaN/GaN core-shell structures on selectively etched GaN rods by molecular beam epitaxy
22: (2014)
Light-Emitting-Diodes based on ordered InGaN nanocolumns emitting in the blue, green and yellow spectral range
23: (2014)
"Selective Area Growth of III-Nitrides on polar and semi-polar orientations: from light emitters to pseudo-substrates"
24: (2015)
Correlation among Growth Conditions, Morphology, and Optical Properties of Nanocolumnar InGaN/GaN Heterostructures Selectively Grown by Molecular Beam Epitaxy
25: (2015)
Crystallographically uniform arrays of ordered (In)GaN nanocolumns
26: (2015)
Demonstration of (In, Ga)N/GaN Core-Shell Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy on Ordered MOVPE GaN Pillars
27: (2015)
Distinguishing Cubic and Hexagonal phases within InGaN/GaN micro-structures using Electron Energy Loss Spectroscopy
28: (2015)
Electron tomography of (In,Ga)N insertions in GaN nanocolumns grown on semi-polar (11(2)over-bar2) GaN templates
29: (2015)
Lattice pulling effect and strain relaxation in axial (In, Ga)N/GaN nanowire heterostructures grown on GaN-buffered Si(111) substrate
30: (2015)
Optical properties of ZnMgO films grown by spray pyrolysis and their application to UV photodetection
31: (2016)
Distinguishing cubic and hexagonal phases within InGaN/GaN microstructures using electron energy loss spectroscopy
32: (2016)
Influence of composition, strain, and electric field anisotropy on different emission colors and recombination dynamics from InGaN nanodisks in pencil-like GaN nanowires
33: (2016)
Influence of composition, strain, and electric field anisotropy on different emission colors and recombination dynamics from InGaN nanodisks in pencil-like GaN nanowires
34: (2016)
Oxygen-related photoluminescence quenching in selectively grown GaN nanocolumns: Dependence on diameter
35: (2016)
Titanium induced polarity inversion in ordered (In,Ga)N/GaN nanocolumns
36: (2017)
Selective area growth of AIN/GaN nanocolumns on (0001) and (11-22) GaN/sapphire for semi-polar and non-polar AIN pseudo-templates
37: (2017)
Selective Area Growth of InGaN/GaN Nanocolumnar Heterostructures by Plasma-Assisted Molecular Beam Epitaxy
38: (2019)
Ordered arrays of defect-free GaN nanocolumns with very narrow excitonic emission line width
2 Capítulos de libros
1: (2014)
Selective area growth of GaN nanowires by plasma-assisted molecular beam epitaxy
2: (2017)
Selective Area Growth of InGaN/GaN Nanocolumnar Heterostructures by Plasma Assisted Molecular Beam Epitaxy
8 Conferencias invitadas en congresos
1: (2009)
E.MUÑOZ ET AL "Recent Advances on AlGaN photodetectors" University of Shizuoka, Research Inst. of Electronics Tokyo (Japan), 2009
2: (2011)
MBE growth and characterization of InGaN-based films and nanocolumns on Silicon substrates and GaN templates
3: (2011)
Surface-related optical properties of GaN and InGaN nanocolumns
4: (2011)
Understanding the Selective Area Nucleation and Growth of GaN nanocolumns by MBE using Ti nanomasks
5: (2013)
Selective Area Growth of III-N Nanostructrures for Optoelectronic Applications
6: (2015)
Morphology and optical properties of ordered GaN and InGaN nanocolumns grown on non-polar and semipolar orientations
7: (2015)
Novel optoelectronics devices
8: (2015)
Selective Area Growth of InGaN/GaN Nanocolumnar structures for Classical and Quantum Light Sources
2 Cursos, seminarios y tutoriales
1: (2013)
In(Ga)N/GaN nanocolumnar structures for solid state lighting
2: (2015)
Self assembled and ordered group III nitride nanocolumnar structures for light emitting applications
37 Ponencia en Congresos
1: (2009)
J. PEDRÓS, F. CALLE, J. GRAJAL, Z. BOUGRIOUA "Voltage tunable SAW phase shifter on AlGaN/GaN" 2009 IEEE International Ultrasonics Symposium Roma (Italy), 2009.
2: (2010)
S. ALBERT, J. GRANDAL, M.A. SANCHEZ-GARCIA, P. LEFEBVRE, J. RISTIC, E. CALLEJA, A. VILALTA-CLEMENTE, B. LACROIX, P. RUTERANA, E. LUNA, U. JAHN, A. TRAMPERT. "MBE growth and characterization of InN/InGaN thin films and nanostructures on GaN templates and Si(111) substrates" 16th International MBE Conference Berlin (Germany) 2010
3: (2011)
Control of the morphology on selective area growth of GaN nanocolumns by rf-plasma-assisted
4: (2011)
E-beam nanopatterning for the selective area growth of III-V nitride nanorods
5: (2011)
Efficient phosphor-free, white light emission from ordered
6: (2011)
Emission control of InGaN nanocolumns with growth temperature
7: (2011)
Fabrication of GaN nanorods by focused ion beam
8: (2011)
InN/GaN heterojunction electrical behavior
9: (2011)
Plasma-assisted MBE growth of III-N nanorods: applications to optoelectronic devices and photovoltaics
10: (2011)
Selective area growth of GaN nanocolumns by rf-plasma-assisted MBE at low temperature and under nitrogen-rich conditions
11: (2011)
Substrate nanopatterning by e-beam lithography to growth ordered arrays of III-nitride nanodetectors, white light emitters, and solar cells, Marie Curie Researchers Symposium
12: (2011)
Surface-related optical properties of GaN and InGaN nanocolumns
13: (2011)
The microstructure of InN/InGaN heterostructures and quantum wells grown by MBE
14: (2011)
Understanding the selective area nucleation and growth of GaN Nanocolumns by MBE using Ti nanomasks
15: (2011)
X-ray diffraction and transmission electron microscopy analysis of threading dislocations in MBE grown InN layers
16: (2012)
Electrical characterization of single GaN/InGaN nanorods grown by selective-area MBE
17: (2012)
Graphene Electrodes For Nano-LEDs
18: (2012)
Growth and characterization of ordered InGaN/GaN nanocolumnar structures on GaN/sapphire and Si (111) substrates
19: (2012)
Influence of substrate orientation on the morphology and optical properties of selective area growth GaN nanocolumns and InGaN quantum disks
20: (2012)
NanoLEDs with graphene electrode
21: (2012)
Selective area growth of GaN/InGaN nanocolumnar heterostructures on polar, semipolar and non-polar substrates
22: (2013)
AFM electrical characterization of graphene nano LEDs
23: (2013)
Coalescence of selective area growth GaN by MBE, for high quality polar, non polar and semi polar templates
24: (2013)
Growth and characterization of ordered In(Ga)N/GaN nanocolumnar structures on Si (111) substrates with In contents between 0 and 100%
25: (2013)
Localized emission from the apex of GaN/(In,Ga)N/GaN
26: (2013)
MBE selective area growth of polar, non-polar and semi-polar GaN and InGaN/GaN nanostructures
27: (2013)
Selective area growth of In(Ga)N/GaN nanocolumns by molecular beam epitaxy on Si(111): from ultraviolet to infrared emission
28: (2013)
Selective area growth of In(Ga)N/GaN nanocolumns on silicon substrates
29: (2013)
Selective area growth of InGaN/GaN nanostructures for green and white light emission
30: (2013)
Selective area growth of polar, non-polar and semi-polar GaN and InGaN/GaN nanostructures
31: (2014)
Growth and characterization of InGaN/GaN core-shell structures by molecular beam epitaxy
32: (2014)
Growth of InGaN/GaN core-shell structures by molecular beam epitaxy
33: (2015)
A two-color emitting ingan nanodisk as a site-controlled source of classical and quantum light
34: (2015)
Direct imaging of single InGaN/GaN core-shell microrods using nano-scale Scanning Transmission Electron Microscopy Cathodoluminescence
35: (2015)
Selective Area Growth of III- Nitride Nanorods on polar, semi-polar and non-polar orientations: Device applications
36: (2018)
Nanoscale Imaging of Individual AlN/GaN/AlN Quantum Disk embedded in GaN Nanowires
37: (2018)
Selective area growth of GaN nanocolumns with extremely low photoluminescence linewidth of <0.6 meV
Explotación de Resultados y Transferencia de Tecnología
5 Patentes
1: (2012)
Light-emitting diode chip. E2011,0717 DE X /3265/2011E23319DE
2: (2012)
Light-emitting diode chip. E2011,0717 DE X /3265/2011E23319DE
3: (2015)
Temperature-Stable All-InGaN White Nanorod LEDs
4: (2019)
Light-emitting diode chip
5: (2019)
Non-polar III-Nitride binary and ternary materials, method for obtaining thereof and uses
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S2i 2023 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNPACTO (IPT-020000-2010-22)
