Observatorio de I+D+i UPM
• ESPAÑOL
• ENGLISH
INVESTIGADORES
ESTRUCTURAS DE I+D+I
ACTIVIDAD INVESTIGADORA
INNOVACIÓN
Investigador
Enrique Calleja Pardo
Categoría Investigador
CATEDRATICO UNIVERSIDAD
Escuela UPM
E.T.S. DE INGENIEROS DE TELECOMUNICACION
Departamento:
INGENIERÍA ELECTRÓNICA (N)
Centros/Institutos I+D+i
INST.SIST.OPTOELECT. MICROTECNOL. "ISOM"
Area Conocimiento
TECNOLOGIA ELECTRONICA
Grupo de Investigación:
Grupo de Dispositivos Semiconductores del ISOM
Email (Directorio UPM)
enrique.calleja
upm.es
Teléfono (Directorio UPM)
910672203
Datos de Memorias relacionados
Proyectos de I+D+i y generación de recursos
83 Proyectos de I+D+i
1: (2007)
"Ayudas para apoyar las líneas de I+D en el programa de creación y consolidación de grupos de investigación de la Universidad Politécnica de Madrid. CAM, Referencia: CCG07-UPM/000-3220"
2: (2007)
"Desarrollo de Dispositivos Emisores y Detectores en el rango Ultravioleta para Aplicaciones en Comunicaciones, Generación de Luz Blanca, Detección de Contaminación y Bio-Fotónica". Min. Educación y Ciencia. Referencia: MAT2004-02875
3: (2007)
"Desarrollo de Dispositivos Emisores y Detectores en el rango Ultravioleta para Aplicaciones en Comunicaciones, Generación de Luz Blanca, Detección de Contaminación y Bio-Fotónica". Min. Educación y Ciencia. Referencia: MAT2004-02875. ADICIONAL
4: (2007)
"Fabricación de substratos nanoestructurados de SiO2 para crecimiento Epitaxial de emisores eficientes de Luz Blanca con Nitruros del Grupo-III" Ministerio de Industria,Turismo y Comercio, PROFIT- 2007. FIT-330100-2007-134 (2007-2008).
5: (2007)
"International Workshop 2007 on MBE". Sierra Nevada, Granada, España. ISOM-UPM
6: (2007)
"Microscopio de barrido de capacidad para caracterización de nanoestructuras". Min. Educación y Ciencia, UNPM06-33-037 (2007)
7: (2007)
"Nanoestructuras de Semiconductores como Componentes para la Información Cuántica (NANIC)" Min. Educación y Ciencia, Acción Estratégica en Nanotecnología. NAN2004-09109-C04-02. (2005-2008).
8: (2007)
"Nanoestructuras de Semiconductores como Componentes para la Información Cuántica (NANIC)" Min. Educación y Ciencia, Acción Estratégica en Nanotecnología. NAN2004-09109-C04-02. (2005-2008).
9: (2007)
"Nanoestructuras de semiconductores como componentes para la información cuántica"(NANOCOMIC)
10: (2007)
"Sistema de caracterización óptica avanzada multifuncional"
11: (2007)
"Tecnologías de Información Basadas en Optica Cuántica" Programa Consolider-Ingenio CSD2006-19.Anualidades(2006-2011)
12: (2007)
"Tecnologías de Información Basadas en Optica Cuántica" Programa Consolider-Ingenio CSD2006-19.Anualidades(2006-2011)
13: (2007)
"14th European Workshop on MBE, Sierra Nevada, Granada, ESPAÑA" Min. Educación y Ciencia, ACC-030000-2007-3 (2007)
14: (2007)
"14th European Workshop on MBE, Sierra Nevada, Granada, ESPAÑA" Min. Educación y Ciencia, ACC-030000-2007-3(2007)
15: (2007)
"14th European Workshop on MBE, Sierra Nevada, Granada, ESPAÑA" Ministerio de Educación y Ciencia.TEC2007-30322-E/ (2007)
16: (2007)
"14th European Workshop on MBE, Sierra Nevada, Granada, ESPAÑA" Ministerio de Educación y Ciencia.TEC2007-30322-E/ (2007)
17: (2007)
"14th European Workshop on MBE, Sierra Nevada, Granada, ESPAÑA.ISOM-UPM
18: (2008)
Ayudas financieras para la mejora de las infraestructuras científicas y tecnológicas singulares y para el acceso a las mismas
19: (2008)
Ayudas para apoyar las líneas de I+D en el programa de creación y consolidación de grupos de investigación de la UPM. (Resolución de 19 de junio de 2007)
20: (2008)
Desarrollo de Micro y Nanocavidades incluyendo regiones activas de Puntos Cuánticos de Nitruros-III: Aplicaciones a emisores de luz en azul y UV (QUADONIC)
21: (2008)
Fabricación de substratos nanoestructurados de SiO2 para crecimiento epitaxial de emisores eficientes de Luz Blanca con Nitruros del Grupo-III
22: (2008)
Nanoestructuras de semiconductores como componentes para la información cuántica
23: (2008)
Programa de infraestructura y gestión de calidad de la red de laboratorios incluido en el Contrato-Programa de I+D entre la CAM y la UPM
24: (2008)
Programa de infraestructura y gestión de calidad de la red de laboratorios incluido en el Contrato-Programa de I+D entre la CAM y la UPM
25: (2008)
Quantum optical information technology
26: (2008)
14th European Molecular Beam Epìtaxy" Acción complementaria ACC-030000-2007-3
27: (2008)
14th European Molecular Beam Epìtaxy. Acción complementaria TEC2007-30322-E/
28: (2009)
AMBER-GREEN EMITTERS TARGETING HIGH TEMPERATURE APPLICATIONS AGETHA
29: (2009)
CARACTERIZACION DE SEMICONDUCTORES ME- DIANTE LAS TECNICAS SIMS-AUGER- EXPEDIENTE 50.
30: (2009)
CELULAS SOLARES DE HETEROUNION INGAN Y ALTA EFICIENCIA CRECIDAS POR MBE
31: (2009)
CENTRAL DE TECNOLOGIA DEL ISOM
32: (2009)
DESARROLLO DE DISPOSITIVOS EMISORES Y DETECTORES EN EL RANGO ULTRAVIOLETA PARA APLICACIONES....
33: (2009)
DESARROLLO DE MICRO Y NANOCAVIDADES INCLUYENDO REGIONES ACTIVAS DE PUNTOS CUANTICOS DE NITRUROS-III: APLICACIONES A EMISORES DE LUZ EN AZUL Y UV
34: (2009)
EUROMBE WORKSHOP 2007
35: (2009)
EUROPEAN MOLECULAR BEARN EXPITAXY WORKSHOP
36: (2009)
E-20968 LAQUANI, LASER QUALITY III-V NITRIDES
37: (2009)
FABRICACION DE SUBSTRATOS MANOESTRUCTURADOS DE SIO2 PARA CRECIMIENTO EPITAXIAL DE EMISORES EFICIENTES DE LUZ BLANCA CON NITRUROS DEL GRUPO-III (NANODOTS)
38: (2009)
FABRICACION DE SUBSTRATOS NANOESTRUCTURADOS DE SIO2 PARA CRECIMIENTO EPITAXIAL DE EMISORES EFICIENTES DE LUZ BLANCA CON NITRUROS DEL GRUPO-III
39: (2009)
GAINNAS-BASED SEMICONDUCTOR HETEROSTRUC-TURES FOR 1.5 UM OPTO-ELECTRONICS CONTRACT N§ IST-2000-26478 GINA 1.5
40: (2009)
INSTITUTO DE SISTEMAS OPTOELECTRONICOS Y MICROTECNOLOGIA ISOM
41: (2009)
NANOESTRUCTURAS DE SEMICONDUCTORES COMO COMPONENTES PARA LA INFORMACION CUANTICA.
42: (2009)
NONOESTRUCTURAS DE SEMICONDUCTORES COMO COMPONENTES PARA LA INFORMACION CUANTICA
43: (2009)
n.228999 - SMASH
44: (2009)
P-TYPE DOPING OF GAN AN AIGAN LAYERS GROWN BY MBE
45: (2009)
QUANTUM OPTICAL INFORMATION TECHNOLOGY - CSD2006-00019.
46: (2010)
AYUDAS PUBLICAS A LA CIENCIA Y TECNOLOGIA EN LA LINEA INSTRUMENTAL DE ACTUACION DE INFRAESTRUCTURAS CIENTIFICO-TECNOLOGICAS
47: (2010)
AYUDAS PUBLICAS A LA CIENCIA Y TECNOLOGIA EN LA LINEA INSTRUMENTAL DE ACTUACION DE INFRAESTRUCTURAS CIENTIFICO-TECNOLOGICAS DEL PLAN NACIONAL DE INVESTIGACION CI
48: (2010)
CELULAS SOLARES DE HETEROUNION INGAN Y ALTA EFICIENCIA CRECIDAS POR MBE
49: (2010)
DESARROLLO DE MICRO Y NANOCAVIDADES INCLUYENDO REGIONES ACTIVAS DE PUNTOS CUANTICOS DE NITRUROS-III: APLICACIONES A EMISORES DE LUZ EN AZUL Y UV
50: (2010)
n.228999 - SMASH
51: (2010)
QUANTUM OPTICAL INFORMATION TECHNOLOGY - CSD2006-00019.
52: (2010)
SMART NANOSTRUCTURED SEMICONDUCTORS FOR ENERGY-SAVING LIGHT SOLUTIONS
53: (2010)
subproyecto ISOM: NANODISPOSITIVOS ESIFICIENTES DE LUZ CLASICA Y CUANTICA
54: (2010)
SUBSTRATE NANOPATTERNING BY E-BEAM LITHOGRAPHY TO GROWTH ORDERED ARRAYS OF III-NITRIDE NANODETECTORS: APPLICATION TO IR DETECTORS, EMITTERS, AND NEW SOLAR CELLS
55: (2010)
Substrate nanopatterning by e-beam lithography to growth ordered arrays of III-Nitride nanodetectors: application to IR detectors, emitters, and new Solar Cells PIEF-GA-2009-253085
56: (2010)
TRABAJOS DE MEDICIONES
57: (2011)
AYUDAS PUBLICAS A LA CIENCIA Y TECNOLOGIA EN LA LINEA INSTRUMENTAL DE ACTUACION DE INFRAESTRUCTURAS CIENTIFICO-TECNOLOGICAS DEL PLAN NACIONAL DE INVESTIGACION CI
58: (2011)
CELULAS SOLARES DE HETEROUNION INGAN Y ALTA EFICIENCIA CRECIDAS POR MBE
59: (2011)
CENTRAL DE TECNOLOGIA DEL ISOM
60: (2011)
DESARROLLO DE MICRO Y NANOCAVIDADES INCLUYENDO REGIONES ACTIVAS DE PUNTOS CUANTICOS DE NITRUROS-III: APLICACIONES A EMISORES DE LUZ EN AZUL Y UV
61: (2011)
RAINBOW: High quality and intrinsic Properties of InN and indium rich Nitride Alloys
62: (2011)
SMASH: Smart nanostructured semiconductors for energy saving light solutions
63: (2011)
SNB09: Substrate nanopatterning by e-beam lithography to growth ordered arrays of III-Nitride nanodetectors: application to IR detectors, emitters, and new Solar Cells
64: (2011)
subproyecto ISOM: NANODISPOSITIVOS ESIFICIENTES DE LUZ CLASICA Y CUANTICA
65: (2012)
GECCO: 3D GaN for High Efficiency Solid State Lighting
66: (2012)
Proyecto de colaboración dentro del Campus de Excelencia Internacional (CEI): Apoyo al contrato postdoctoral de la Dra. Almudena Torres Pardo. Temática: Atomic Scale Structural and Chemical Characterization of Functional Materials
67: (2012)
Proyecto de colaboración dentro del Campus de Excelencia Internacional (CEI): Apoyo al contrato postdoctoral de la Dra. Almudena Torres Pardo. Temática: Atomic Scale Structural and Chemical Characterization of Functional Materials
68: (2012)
subproyecto ISOM: NANODISPOSITIVOS ESIFICIENTES DE LUZ CLASICA Y CUANTICA
69: (2013)
Desarrollo de actividades para la deposición con láminas III-V sobre substratos semiconductores (PROMETHEUS)
70: (2013)
N.228999 - SMASH
71: (2013)
subproyecto ISOM: NANODISPOSITIVOS ESIFICIENTES DE LUZ CLASICA Y CUANTICA
72: (2013)
SUBSTRATE NANOPATTERNING BY E-BEAM LITHOGRAPHY TO GROWTH ORDERED ARRAYS OF III-NITRIDE NANODETECTORS: APPLICATION TO IR DETECTORS, EMITTERS, AND NEW SOLAR CELLS. SNB09
73: (2014)
Desarrollo de actividades para la deposición con láminas III-V sobre substratos semiconductores (PROMETHEUS)
74: (2014)
subproyecto ISOM: NANODISPOSITIVOS ESIFICIENTES DE LUZ CLASICA Y CUANTICA
75: (2015)
FESEM: Extension de medida de catodoluminiscencia (cl) al rango infrarojo en microscopio de barrido electrónico FESEM
76: (2015)
FESEM: Extensión de medida de catodoluminiscencia(CL) al rango infrarrojo en microcospio de barrido electrónico FESEM
77: (2015)
MBE: ADECUACIÓN DE UN REACTOR DE EPITAXIA DE HACES MOLECULARES (MBE) PARA EL CRECIMIENTO EPITAXIAL DE NANOESTRUCTURAS SEMICONDUCTORAS
78: (2015)
PINC: Towards p-type conductivity in In0.5Ga0.5N nanocolumns on a Si (100) substrate with GaN buffer layers
79: (2016)
GECCO: 3D GAN FOR HIGH EFFICIENCY SOLID STATE LIGHTING
80: (2016)
INGANOS: Crecimiento por Epitaxia de Haces Moleculares de capas finas y nanoestructuras ordenadas de InGaN para dispositivos fotovoltaicos, sensores y generadores de hidrógeno
81: (2018)
Fabrication of high quality non-polar AlN, GaN, AlGaN and InGaN
82: (2019)
Fabrication of high quality non-polar AlN, GaN, AlGaN and InGaN
83: (2019)
GANQUBIT: Nanohilos basados en GaN para sistemas de información cuántica y circuitos digitales
Formación de Investigadores y Movilidad
5 Estancias y sabáticos recogidos en programas oficiales
1: (2007)
Estancia del Doctorando D. Sergio Fernández Garrido, en la UNIPRESS, Polonia. Para el crecimiento por epitaxia de haces moleculares de diodos electroluminiscentes (LEDs) con emisión en el rango azul-ultravioleta, duración de 12 semanas, desde 03/08/07- 03/11/07.
2: (2007)
Estancia del Doctorando D. Sergio Fernández Garrido, en la Polish Academy of Sciences, Varsovia, Polonia. Para el crecimiento por epitaxia de haces moleculares de diodos electroluminiscentes (LEDs) con emisión en el rango azul-ultravioleta, duración de 12 semanas, desde 03/08/07- 03/11/07.
3: (2010)
Dra. MIKAELA CHASHNIKOVA, invitada por Professor. Dr. ENRIQUE CALLEJA, de 01/11/2010 al 31/01/2011
4: (2010)
Dra. MIKAELA CHASHNIKOVA, organismo HUMBOLT UNIVERSITY OF BERLIN, GERMANY, invitada por Professor. Dr. ENRIQUE CALLEJA, de 01/11/2010 al 31/01/2011
5: (2017)
Estancia por colaboración investigadora del Dr. Grzegorz Muziol, Assistant Professor at IHPP PAS in the MBE group of Prof. Czeslaw Skierbiszewski.
4 Tesis Doctorales
1: (2009)
SERGIO FERNÁNDEZ-GARRIDO "Crecimiento de nitruros del grupo III por epiaxia de haces moleculares para la fabricación de diodos electroluminiscentes en el rango visible-ultravioleta"
2: (2012)
Bloques constituyentes de microcavidades planares de nitruros-III crecidos por epitaxia de haces moleculares
3: (2016)
Investigations on III-Nitrides nanostructures: application to Renewable Energies and Bio-Sensing
4: (2017)
InxGa1-xN layers, nanowires, and nanodots on Silicon for clean energy applications
Difusión de Resultados de Investigación
144 Artículos en revistas
1: (2007)
A. WIERTS, J.M. ULLOA, C. ÇELEBI, P.M. KOENRAAD, H. BOUKARI, L. MAINGAULT, R. ANDRÉ, H. MARIETTE "Cross-sectional scanning tunnelling microscopy study on II-VI multilayer structures" Applied Physics Letters, 91, 161907-161909 (2007) ISSN: 0003-6951
2: (2007)
D. PASTOR, J. IBAÑEZ, R. CUSCO, L. ARTUS, G. GONZALEZ-DIAZ, E.CALLEJA "Crystal damage assessment of Be+-implanted GaN by UV Raman scattering" Semiconductor. Sci. Technology, 22, 70 (2007)
3: (2007)
E. CALLEJA, J. GRANDAL, M.A. SÁNCHEZ-GARCÍA, M. NIEBELSCHÜTZ, V. CIMALLA, O. AMBACHER "Evidence of electron accumulation at non-polar surfaces of InN nanocolumns" Applied Physics Letters, 90, 262110-262112 (2007) ISSN: 0003-6951
4: (2007)
E. CALLEJA, J. RISTIC, S. FERNÁNDEZ-GARRIDO, L. CERUTTI, M. A. SÁNCHEZ-GARCÍA, J. GRANDAL, A. TRAMPERT, U. JAHN, G. SANCHEZ, A. GRIOL, B. SANCHEZ "Growth, morphology and structural properties of group-III-nitride nanocolumns and nanodisks" Physica Status Solidi (b), 244, 2816-2837 (2007) ISSN: 1521-3951
5: (2007)
E. CALLEJA, J. RISTIĆ, S. FERNÁNDEZ-GARRIDO, L. CERUTTI, M. A. SÁNCHEZ-GARCÍA, J. GRANDAL, A. TRAMPERT, U. JAHN, G. SANCHEZ, A. GRIOL, B. SANCHEZ "Growth, morphology and structural properties of group-III-nitride nanocolumns and nanodisks" Physica Status Solidi (b), 244, 2816-2837 (2007) ISSN: 0370-1972
6: (2007)
G. KOBLMÜLLER, F. WU, T. MATES, J.S. SPECK, S. FERNANDEZ-GARRIDO, E. CALLEJA "High electron mobility GaN grown under N-rich conditions by plasma-assisted molecular beam epitaxy" Applied Physics Letters, 91, 221905-221907 (2007) ISSN: 0003-6951
7: (2007)
G. KOBLMÜLLER, J.S. SPECK , S. FERNANDEZ-GARRIDO, E. CALLEJA "In situ investigation of growth modes during plasma-assisted molecular beam epitaxy of (0001) GaN" Applied Physics Letters, 91, 161904-161906 (2007) ISSN: 0003-6951
8: (2007)
J. GRANDAL, M.A. SANCHEZ-GARCIA , E. CALLEJA , E. LUNA , A. TRAMPERT "Accommodation mechanism of InN nanocolumns grown on Si (111) substrates by molecular beam epitaxy" Applied Physics Letters, 91, 021902-021904 (2007) ISSN: 0003-6951
9: (2007)
J. M. ULLOA, C. ÇELEBI, P. M. KOENRAAD, A. SIMON, E. GAPIHAN, A. LETOUBLON, N. BERTRU, I. DROUZAS, D.J. MOWBRAY, M.J. STEER, M. HOPKINSON "Atomic scale study of the impact of the strain and composition of the capping layer on the formation of InAs quantum dots"Journal of Applied Physics, 101, 081707-081712 (2007) ISSN: 0021-8979
10: (2007)
J. M. ULLOA, I. W. D. DROUZAS, P. M. KOENRAAD, D.J. MOWBRAY, M.J. STEER, H. Y. LIU, M. HOPKINSON "Suppression of InAs/GaAs quantum dot decomposition by the incorporation of a GaAsSb capping layer" Applied Physics Letters 90, 213105-213108 (2007) ISSN: 0003-6951
11: (2007)
J. M. ULLOA, P. M. KOENRAAD, E. GAPIHAN, A. LÉTOUBLON, N. BERTRU "Double capping of MBE grown InAs/InP quantum dots studied by cross-sectional scanning tunneling microscopy" Applied Physics Letters, 91, 073106-073109 (2007) ISSN: 0003-6951
12: (2007)
J.M. CALLEJA, S. LAZIC, J. SANCHEZ-PÁRAMO, F. AGULLÓ-RUEDA, L. CERUTTI, J. RISTIC, S. FERNÁNDEZ-GARRIDO, M.A. SÁNCHEZ-GARCIA, J. GRANDAL, E. CALLEJA, A. TRAMPERT, U. JAHN "Inelastic light scattering spectroscopy of semiconductor nitride nanocolumns. Physica Status Solidi (b), 244, 2838-2846 (2007) ISSN: 0370-1972
13: (2007)
J.M. CALLEJA, S. LAZIĆ, J. SANCHEZ-PÁRAMO, F. AGULLÓ-RUEDA, L. CERUTTI, J. RISTIĆ, S. FERNÁNDEZ-GARRIDO, M.A. SÁNCHEZ-GARCIA, J. GRANDAL, E. CALLEJA, A. TRAMPERT, U. JAHN "Inelastic light scattering spectroscopy of semiconductor nitride nanocolumns. Physica Status Solidi (b), 244, 2838-2846 (2007) ISSN: 0370-1972
14: (2007)
L. OUATTARA, J. M. ULLOA, A. MIKKELSEN, E. LUNDGREN, P. M. KOENRAAD, M. BORGSTRÖM, L. SAMUELSON, W. SEIFERT "Correlation lengths in stacked quantum dot systems: Experiment and Theory" Nanotechnology, 18,145403 -145406 (2007) ISSN: 0957-4484
15: (2007)
M. NIEBELSCHUTZ, V. CIMALLA, O. AMBACHER, T. MACHLEIDT, J. RISTIC, E.CALLEJA "Electrical perfomance of Group III nitride nanocolumns" Physica E 37, 200 (2007)
16: (2007)
M. NIEBELSCHÜTZ, V. CIMALLA, O. AMBACHER, T. MACHLEIDT, K.H. FRANKE, J. RISTIC, J. GRANDAL, M.A. SÁNCHEZ-GARCÍA, E. CALLEJA "Electrical characterization of Group III-Nitride nanocolumns with Scanning Force Microscopy" Modern Research and Educational Topics in Microscopy, Nº3, Eds. A. Méndez-Vilas, J. Díaz. Formatex, 560-567 (2007) ISSN: 0370-1972
17: (2007)
S. LAZIĆ, E. GALLARDO, J.M. CALLEJA, F. AGULLO-RUEDA, J. GRANDAL, M.A. SANCHEZ-GARCIA, E. CALLEJA, E. LUNA, A. TRAMPERT "Phonon-plasmon coupling in electron surface accumulation layers in InN nanocolumns" Physical Review B, 76, 205319-205321 (2007) ISSN: 1098-0121
18: (2007)
S. LAZIC, E. GALLARDO, J.M. CALLEJA, F. AGULLO-RUEDA, J. GRANDAL, M.A. SANCHEZ-GARCIA, E. CALLEJA, E. LUNA, A. TRAMPERT "Phonon-plasmon coupling in electron surface accumulation layers in InN nanocolumns" Physical Review B, 76, 205319-205321 (2007) ISSN: 1098-0121
19: (2007)
S. LAZIC, E. GALLARDO, J.M. CALLEJA, F. AGULLO-RUEDA, M.A. SANCHEZ-GARCIA, J. GRANDAL, E. CALLEJA, A. TRAMPERT "Coupled longitudinal optical phonon-plasmon modes in InN nanocolumns" AIP Conference Proceedings 893, 287 (2007) ISSN: 1077-3118
20: (2007)
S. LAZIĆ, E. GALLARDO, J.M. CALLEJA, F. AGULLO-RUEDA, M.A. SANCHEZ-GARCIA, J. GRANDAL, E. CALLEJA, A. TRAMPERT "Coupled longitudinal optical phonon-plasmon modes in InN nanocolumns" AIP Conference Proceedings 893, 287 (2007) ISSN: 1077-3118
21: (2007)
U. JAHN, J. RISTIC, E.CALLEJA "Cathodoluminescence of GaN/(Al,Ga)N nanocolumns containing quantum disks" Applied Physics Letters, 90, 161117-161119 (2007) ISSN: 0003-6951
22: (2007)
Z. BOUGRIOUA, P. GIBART, E. CALLEJA, U. JAHN, A. TRAMPERT, J. RISTIC, M. UTRERA, G. NATAF "Growth of free-standing GaN using Pillar-Epitaxial Lateral Overgrowth from GaN nanocolumns" Journal of Crystal Growth, 309, 113-115 (2007) ISSN: 0022-0248
23: (2008)
A comprehensive diagram to grow InAlN alloys by plasma-assisted molecular beam epitaxy
24: (2008)
A comprehensive diagram to grow InAlN alloys by plasma-assisted molecular beam epitaxy
25: (2008)
Band bending at In-rich InGaN surfaces
26: (2008)
Composition and luminiscence of AllnGaNAN layers grown by plasma-assisted molecular beam epitaxy
27: (2008)
Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy
28: (2008)
Far-infrared transmission in GaN,AlN and AlGaN thin films grown by molecular beam epitaxy
29: (2008)
Growth and characterization of lattice-matched InAlN/GaN Bragg reflectors grown by plasma-assisted Molecular Beam Epitaxy
30: (2008)
In-situ GaN decomposition analysis by quadrupole mass spectrometry and reflection high-energy electron diffraction
31: (2008)
On the mechanisms of spontaneous growth of III-nitride nanocolumns by plasma-assisted molecular beam epitaxy
32: (2008)
Photoluminiscence enhancement in quaternay III-nitrides alloys grown by molecular beam epitaxy with increasing Al content
33: (2008)
Raman scattering by coupled plasmon-LO phonons in InN nanocolumns
34: (2008)
Raman scattering by longitudinal optical phonons in InN nanocolumns grown on Si(111) and Si(001) substrates
35: (2008)
Space charged region in GaN and InN nanocolumns investigated by Atomic Force Microscopy
36: (2008)
Spatially Resolved Luminescence Spectroscopy of Single GaN/(Al,Ga)N Quantum Disks
37: (2009)
A. REDONDO-CUBERO, K. LORENZ, N. FRANCO, S. FERNÁNDEZ-GARRIDO, R. GAGO, P.J.M. SMULDERS, E. MUÑOZ, E. CALLEJA, E. ALVES "Influence of steering effects on strain detection in AlGaInN/GaN heterostructures by ion channelling" J. Phys. D: Appl. Phys., 42 (6), 065420-1/8 (2009)
38: (2009)
A.REDONDO-CUBERO, K LORENZ, R GAGO, N FRANCO, S. FERNÁNDEZ-GARRIDO, P.J.M. SMULDERS, E. MUÑOZ, E. CALLEJA, I.M. WATSON, E. ALVES "Breakdown of anamalous channeeling with ion energy for accurate strain determination in GaN-based heterostructures" Applied Physics Letters, 95, 051921-3 (2009)
39: (2009)
D.R. KHANAL, W. WALUKIEWICZ, J. GRANDAL, E. CALLEJA, J. WU, "Determining surface Fermi level pinning position of InN nanowires using electrolyte gating" Applied Physics Letters, 95, 173114 (2009).
40: (2009)
J. GRANDAL, M.A. SÁNCHEZ-GARCÍA, E. CALLEJA, E. GALLARDO, J.M. CALLEJA, E. LUNA, A. TRAMPERT, U. JAHN, "InN nanocolumns grown by plasma-assisted molecular beam epitaxy on A-plane GaN templates" Applied Physics Letters, 94, 221908 (2009)
41: (2009)
N. SOFIKITI, N. CHANIOTAKIS, J. GRANDAL, M. UTRERA, M.A. SANCHEZ-GARCIA, E. CALLEJA, E. ILIOPOULOS, A. GEORGAKILAS, "Direct immobilization of enzymes in GaN and InN nanocolumns: The urease case study2 Applied Physics Letters 95, 113701 (2009)
42: (2009)
P. CORFDIR, P. LEFEBVRE, J. RISTIC, P. VALVIN, E. CALLEJA, J.D. GANIÈRE, B. DEVEAUD-PLÉDRAN, "Time-resolved spectroscopy on GaN nanocolumns grown by plasma assisted molecular beam epitaxy on Si substrates" Journal of Applied Physics, 105, 013113 (2009)
43: (2009)
P.R. EDWARDS, R.W. MARTIN, K. BEJTKA, K.P. O.DONNELL, S. FERNÁNDEZ-GARRIDO, E. CALLEJA. "Correlating Composition and Luminescence Variations in AlInGaN epilayers" Superlattices and Microstructures 45, 151-1, 151-5 (2009)
44: (2009)
R. GARGALLO-CABALLERO, Á.GUZMÁN, M. HOPKINSON, J. M. ULLOA, A. HIERRO, E. CALLEJA "Dependence of N incorporation into (Ga)InAsN QDs on Ga content probed by rapid thermal annealing" Physica status solidi (c), 6,6, 1441-1444 (2009)
45: (2009)
S. FERNÁNDEZ-GARRIDO, J. GRANDAL, E. CALLEJA, M.A. SÁNCHEZ-GARCÍA, D. L. ROMERO "A growth diagram for plasma-assisted molecular beam epitaxy of GaN nanocolumns on Si(111)" Journal of Applied Physics, 106, 126102-1, 126102-3 (2009)
46: (2009)
Z. GACEVIC, S. FERNÁNDEZ-GARRIDO, E. CALLEJA, E. LUNA, A. TRAMPERT "Growth and characterization of lattice-matched InAlN/GaN Bragg reflectors grown by plasma assisted molecular beam epitaxy" Physica status Solidi (c), 6, S2, S643-S645 (2009)
47: (2010)
E. CALLEJA, M.A. SÁNCHEZ-GARCIA, P. LEFEBVRE, J.RISTIC, F. BARBAGINI, A. BENGOECHEA, Z. GACEVIC. "Los LEDs también iluminarán las ciudades" Revista UPM, 16, 11-15 (2010)
48: (2010)
E. SAKALAUSKAS, P. SCHLEY, J. RATHEL, T.A. KLAR, R. MULLER, J. PEZOLDT, K. TONISCH, J. GRANDAL, M.A. SANCHEZ-GARCIA, E. CALLEJA, A. VILALTA-CLEMENTE, P. RUTERANA, R. GOLDHAHN, "Optical properties of InN grown on Si(111) substrate". Physica Status Solidi (a) 207, 5, 1066 (2010)
49: (2010)
GaN and InN nanocolumns as electrochemical sensing elements: Potentiometric response to KCl, pH and urea
50: (2010)
InAlN/GaN Bragg reflectors grown by plasma-assisted molecular beam epitaxy
51: (2010)
J. PEREIRO, A. REDONDO-CUBERO, S. FERNANDEZ-GARRIDO, C. RIVERA, A. NAVARRO, E. MUNOZ, E. CALLEJA, R. GAGO, "Mg doping of InGaN layers grown by PA-MBE for the fabrication of Schottky barrier photodiodes" Journal of Physics D: Applied Physics, 43, 33, 335101 (2010)
52: (2010)
Mg doping of InGaN layers grown by PA-MBE for the fabrication of Schottky barrier photodiodes
53: (2010)
N. SOFIKITI, N. CHANIOTAKIS, J. GRANDAL, M. UTRERA, M.A. SÁNCHEZ-GARCÍA, E. CALLEJA, "GaN and InN nanocolumns as electrochemical sensing elements: Potentiometric response to KCl, pH and urea" Materials Letters 64, 1332 (2010)
54: (2010)
Optical properties of InN grown on Si(111) substrate
55: (2010)
Z. GACEVIC, S. FERNÁNDEZ-GARRIDO, D. HOSSEINI, S. ESTRADE, F. PEIRÓ, E. CALLEJA ''InAlN/GaN Bragg reflectors grown by plasma-assisted molecular beam Epitaxy'' Journal of Applied Physics, 108, 113117 (2010).
56: (2011)
Critical aspects of substrate nanopatterning for the ordered growth of GaN nanocolumns
57: (2011)
Decoupling single nanowire mobilities limited by surface scattering and bulk impurity scattering
58: (2011)
Emission control of InGaN nanocolumns grown by molecular-beam epitaxy on Si(111) substrates
59: (2011)
High quality InAlN single layers lattice-matched to GaN grown by molecular beam epitaxy
60: (2011)
InN/InGaN multiple quantum wells emitting at 1.5 mu m grown by molecular beam epitaxy
61: (2011)
One dimensional exciton luminescence induced by extended defects in nonpolar (Al,Ga)N/GaN quantum wells
62: (2011)
Polarity determination by electron energy-loss spectroscopy: application to ultra-small III-nitride semiconductor nanocolumns
63: (2011)
Radiative defects in GaN nanocolumns: Correlation with growth conditions and sample morphology
64: (2011)
Understanding the selective area growth of GaN nanocolumns by MBE using Ti nanomasks
65: (2012)
A comprehensive diagram to grow metal-polarity InGaN alloys by molecular beam epitaxy
66: (2012)
E-beam nano-patterning for the ordered growth of GaN/InGaN nanorods
67: (2012)
Fabrication of GaN nanorods by focused ion beam
68: (2012)
Optoelectronic Properties of InAlN/GaN Distributed Bragg Reflector Heterostructure Examined by Valence
69: (2012)
Ordered gan/ingan nanorods arrays grown by molecular beam epitaxy for phosphor-free white light emission
70: (2012)
Oxygen photo-adsorption related quenching of photoluminescence in group-III nitride nanocolumns
71: (2012)
Plasmon excitation in electron energy-loss spectroscopy for determination of indium concentration in (In,Ga)N/GaN nanowires
72: (2012)
Selective area growth of a- and c-plane GaN nanocolumns by molecular beam epitaxy using colloidal nanolithography
73: (2012)
Selective area growth of a- and c-plane GaN nanocolumns by molecular beam epitaxy using colloidal nanolithography
74: (2013)
A comprehensive diagram to grow (0001)InGaN alloys by molecular beam epitaxy
75: (2013)
A comprehensive diagram to grow (0001)InGaN alloys by molecular beam epitaxy
76: (2013)
Direct growth of indium-rich InGaN on silicon
77: (2013)
Eliminating the buffer between InGaN and Si
78: (2013)
First Demonstration of Direct Growth of Planar High-In-Composition InGaN Layers on Si
79: (2013)
First Demonstration of Direct Growth of Planar High-In-Composition InGaN Layers on Si
80: (2013)
Group III nitride core-shell nano- and microrods for optoelectronic applications
81: (2013)
Group III nitride core-shell nano- and microrods for optoelectronic applications
82: (2013)
High In Composition InGaN for InN Quantum Dot Intermediate Band Solar Cells
83: (2013)
Insight into high-reflectivity AlN/GaN Bragg reflectors with spontaneously formed (Al,Ga)N transient layers at the interfaces
84: (2013)
Insight into high-reflectivity AlN/GaN Bragg reflectors with spontaneously formed (Al,Ga)N transient layers at the interfaces
85: (2013)
Insight into the Compositional and Structural Nano Features of AlN/GaN DBRs by EELS-HAADF
86: (2013)
Insight into the Compositional and Structural Nano Features of AlN/GaN DBRs by EELS-HAADF
87: (2013)
Monolithic integration of InGaN segments emitting in the blue, green, and red spectral range in single ordered nanocolumns
88: (2013)
Monolithic integration of InGaN segments emitting in the blue, green, and red spectral range in single ordered nanocolumns (vol 102, 181103, 2013)
89: (2013)
Near-infrared InN quantum dots on high-In composition InGaN
90: (2013)
Near-infrared InN quantum dots on high-In composition InGaN
91: (2013)
Q-factor of (In,Ga)N containing III-nitride microcavity grown by multiple deposition techniques
92: (2013)
Q-factor of (In,Ga)N containing III-nitride microcavity grown by multiple deposition techniques
93: (2013)
Selective area growth and characterization of GaN nanocolumns, with and without an InGaN insertion, on semi-polar (11-22) GaN templates
94: (2013)
Selective area growth and characterization of GaN nanocolumns, with and without an InGaN insertion, on semi-polar (11-22) GaN templates
95: (2013)
Selective area growth and characterization of InGaN nanocolumns for phosphor-free white light emission
96: (2013)
Selective area growth and characterization of InGaN nanocolumns for phosphor-free white light emission
97: (2013)
Selective area growth of In(Ga)N/GaN nanocolumns by molecular beam epitaxy on GaN-buffered Si(111): from ultraviolet to infrared emission
98: (2013)
Selective area growth of In(Ga)N/GaN nanocolumns by molecular beam epitaxy on GaN-buffered Si(111): from ultraviolet to infrared emission
99: (2013)
Self-Regulated Radius of Spontaneously Formed GaN Nanowires in Molecular Beam Epitaxy
100: (2013)
Self-Regulated Radius of Spontaneously Formed GaN Nanowires in Molecular Beam Epitaxy
101: (2013)
Spontaneous formation of InGaN nanowall network directly on Si
102: (2013)
Spontaneous formation of InGaN nanowall network directly on Si
103: (2013)
Uniform Low-to-High In Composition InGaN Layers Grown on Si
104: (2013)
Uniform Low-to-High In Composition InGaN Layers Grown on Si
105: (2014)
Advances on MBE Selective Area Growth of III-Nitride nanostructures: from nanoLEDs to pseudo substrates
106: (2014)
Growth of InGaN/GaN core-shell structures on selectively etched GaN rods by molecular beam epitaxy
107: (2014)
Investigation of III-V Nanowires by Plan-View Transmission Electron Microscopy: InN Case Study
108: (2014)
Light-Emitting-Diodes based on ordered InGaN nanocolumns emitting in the blue, green and yellow spectral range
109: (2014)
Light-Emitting-Diodes based on ordered InGaN nanocolumns emitting in the blue, green and yellow spectral range
110: (2014)
Selective area growth of GaN nanostructures: A key to produce high quality (11-20) a-plane pseudo-substrates
111: (2014)
"Selective Area Growth of III-Nitrides on polar and semi-polar orientations: from light emitters to pseudo-substrates"
112: (2015)
Blue-to-green single photons from InGaN/GaN dot-in-a-nanowire ordered arrays
113: (2015)
Correlation among Growth Conditions, Morphology, and Optical Properties of Nanocolumnar InGaN/GaN Heterostructures Selectively Grown by Molecular Beam Epitaxy
114: (2015)
Crystallographically uniform arrays of ordered (In)GaN nanocolumns
115: (2015)
Demonstration of (In, Ga)N/GaN Core-Shell Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy on Ordered MOVPE GaN Pillars
116: (2015)
Distinguishing Cubic and Hexagonal phases within InGaN/GaN micro-structures using Electron Energy Loss Spectroscopy
117: (2015)
Dynamic control of the optical emission from GaN/InGaN nanowire quantum dots by surface acoustic waves
118: (2015)
Electron tomography of (In,Ga)N insertions in GaN nanocolumns grown on semi-polar (11(2)over-bar2) GaN templates
119: (2015)
Formation Mechanisms of GaN Nanowires Grown by Selective Area Growth Homoepitaxy
120: (2015)
Lattice pulling effect and strain relaxation in axial (In, Ga)N/GaN nanowire heterostructures grown on GaN-buffered Si(111) substrate
121: (2015)
Near-infrared emitting In-rich InGaN layers grown directly on Si: Towards the whole composition range
122: (2015)
Ordered arrays of InGaN/GaN dot-in-a-wire nanostructures as single photon emitters
123: (2015)
Selective area growth of III-nitride nanorods on polar, semi-polar, and non-polar orientations: device applications.
124: (2015)
Stranski-Krastanov InN/InGaN quantum dots grown directly on Si(111)
125: (2016)
A top-gate GaN nanowire metal-semiconductor field effect transistor with improved channel electrostatic control
126: (2016)
Comparative study of single InGaN layers grown on Si(111) and GaN(0001) templates: The role of surface wetting and epitaxial constraint
127: (2016)
Distinguishing cubic and hexagonal phases within InGaN/GaN microstructures using electron energy loss spectroscopy
128: (2016)
Improving optical performance of GaN nanowires grown by selective area growth homoepitaxy: Influence of substrate and nanowire dimensions
129: (2016)
Influence of composition, strain, and electric field anisotropy on different emission colors and recombination dynamics from InGaN nanodisks in pencil-like GaN nanowires
130: (2016)
Influence of composition, strain, and electric field anisotropy on different emission colors and recombination dynamics from InGaN nanodisks in pencil-like GaN nanowires
131: (2016)
Oxygen-related photoluminescence quenching in selectively grown GaN nanocolumns: Dependence on diameter
132: (2016)
Quantitative parameters for the examination of InGaN QW multilayers by low-loss EELS
133: (2016)
Titanium induced polarity inversion in ordered (In,Ga)N/GaN nanocolumns
134: (2017)
Emission of Linearly Polarized Single Photons from Quantum Dots Contained in Nonpolar, Semipolar, and Polar Sections of Pencil-Like InGaN/GaN Nanowires
135: (2017)
MBE growth of ordered III-nitride nano/microrods: from classical/quantum light sources to nanotransistors and pseudosubstrates (Conference Presentation)
136: (2017)
Selective area growth of AIN/GaN nanocolumns on (0001) and (11-22) GaN/sapphire for semi-polar and non-polar AIN pseudo-templates
137: (2017)
Selective Area Growth of InGaN/GaN Nanocolumnar Heterostructures by Plasma-Assisted Molecular Beam Epitaxy
138: (2018)
Effect of different buffer layers on the quality of InGaN layers grown on Si
139: (2018)
Formation mechanisms of single-crystalline InN quantum dots fabricated via droplet epitaxy
140: (2018)
Unvealing GaN Polytypism in Distributed GaN/InAlN Bragg Reflectors Through HRTEM Image Simulation
141: (2019)
Electron Tomography of Pencil-Shaped GaN/(In,Ga)N Core-Shell Nanowires
142: (2019)
Ordered arrays of defect-free GaN nanocolumns with very narrow excitonic emission line width
143: (2019)
(S)TEM methods contributions to improve the fabrication of InGaN thin films on Si, and InN nanostructures on flat Si and rough InGaN
144: (2019)
Unravelling the polarity of InN quantum dots using a modified approach of negative-spherical-aberration imaging
4 Capítulos de libros
1: (2007)
S. FERNÁNDEZ-GARRIDO, E. CALLEJA, A. REDONDO-CUBERO, R. GAGO, J. PEREIRO, F. GONZÁLEZ-POSADA, E. MUÑOZ. "Propeties and growth by plasma assisted molecular beam epitaxy of quaternary III-Nitrides". In Nitrides and dilute nitrides: Growth, physics and devices, J. Miguel-Sánchez, editor, Research Signpost, Singapore (2007)
2: (2014)
Selective area growth of GaN nanowires by plasma-assisted molecular beam epitaxy
3: (2017)
Ga(In)N nanowires grown by Molecular Beam Epitaxy: from quantum light sources to nano-transistors
4: (2017)
Selective Area Growth of InGaN/GaN Nanocolumnar Heterostructures by Plasma Assisted Molecular Beam Epitaxy
54 Conferencias invitadas en congresos
1: (2007)
E. Calleja "Self-assembled MBE growth of III-Nitride Nanocolumnar Heterostructures on Si substrates" E-MRS 2007, Spring Meeting, Symposium B, Estrasburgo (Francia), 2007 28 de mayo al 1 de junio de 2007
2: (2007)
M. A.Sánchez-García, J. Grandal, A. Bengoechea, D. López-Romero,E. Calleja, S. Lazic, J.M. Calleja, E. Luna, A. Trampert, M. Niebelschütz, V. Cimalla, O. Ambacher "MBE Growth And Characterization Of InN On Silicon Substrates" European Materials Research Society Meeting (E-MRS) 2007 Estrasburgo (Francia) 28 de mayo al 1 Junio de 2007
3: (2008)
Growth and characterization of Nitrides-based (GaN, AlN, InN) nanostructures European Materials Research Society Meeting (E-MRS) 2008 Symposium G (Wide band gap semiconductor nanostructures for optoelectronic applications) Estrasburgo (Francia), 2008
4: (2008)
Growth and characterization of Nitrides-based (GaN, AlN, InN) nanostructures Mini-Symposium on Physics and Applications of InN and InGaN Semiconductor Materials The Rank Prize Funds Grasmere (Inglaterra), 2008
5: (2009)
E. CALLEJA ET AL. "Characterization on In(Ga)N nanorods and MQWs grown by MBE" UK Nitrides Consortium Oxford (UK), 2009
6: (2009)
E. CALLEJA ET AL. "Progress on the spontaneous and ordered growth of III-N nanorods: model, growth on nonpolar substrates and applications" 2009 MRS Fall Meeting Boston (USA), 2009
7: (2009)
E. CALLEJA et al. "Recent progress in growth of III-N nanorods on polar and nonpolar orientation" 15th European Molecular Beam Epitaxy Workshop Zakopane (Poland), 2009
8: (2009)
E. CALLEJA ET AL. "Recent progress on the growth of self-assembled and ordered III-N nanorods on polar and nonpolar substrates" First European Workshop on MBE-Grown Nitride Nanowires Berlin (Germany), 2009
9: (2009)
E. CALLEJA ET AL. "Recent results on the spontaneous and ordered growth of III-N nanocolumns: growth on nonpolar substrates and applications to Optoelectronic Devices" Worshop On frontiers in electronics, WOFE-09 Puerto Rico (USA), 2009
10: (2009)
E. CALLEJA ET AL. "Self-Assembled and Ordered Mbe Growth Of III-Nitride Nanocolumns: Mechanisms, Characterization, And Nanodevices" Spie Symposium on Opto: Integrated Optoelectronic Devices San Jose (USA), 2009
11: (2009)
E. CALLEJA ET AL. "Spontaneous and ordered growth of III-N nanorods on polar and non-polar substrates" European Materials Research Society (E-MRS) Fall Meeting 2009 Warsaw (Poland), 2009
12: (2010)
E. CALLEJA "On the spontaneous and ordered growth of III-N nanocolumns: growth on nonpolar substrates and applications to Optoelectronic Devices". XXXIX "Jaszowiec" International School & Conference on the Physics of Semiconductors Krynica-Zdroj (Poland) 2010.
13: (2010)
E. CALLEJA. "MBE growth of nitrides" RAINBOW SECOND TRAINING WORKSHOP on "Growth and properties of InN and indium containing alloys". ETSIT-UPM-ISOM. Madrid (Spain) 2010
14: (2010)
E. CALLEJA "InGaN-based films and nanocolumnar heterostructures for photovoltaic applications". MCINN-JST Joint Workshop on Nanoscience and New Materials for Environmental Challenges. Barcelona (Spain) 2010
15: (2010)
E. CALLEJA "Spontaneous and ordered growth of III-N nanorods: application to Light emitters and Photovoltaics" 2010 Workshop on Innovative Devices and Systems (WINDS) Hawaii (USA) 2010
16: (2011)
Efficient phosphor-free, white light emission by using ordered arrays of GaN/InGaN nanocolumnar LEDs grown by Selective Area MBE'
17: (2011)
MBE growth and characterization of InGaN-based films and nanocolumns on Silicon substrates and GaN templates
18: (2011)
Surface-related optical properties of GaN and InGaN nanocolumns
19: (2011)
Surface-related optical properties of GaN and InGaN nanocolumns
20: (2011)
Understanding the Selective Area Nucleation and Growth of GaN nanocolumns by MBE using Ti nanomasks
21: (2012)
Efficient green emission and phosphor-free white lighting based on nanoLED ordered arrays grown by Selective Area MBE
22: (2012)
GaN growth by plasma-MBE
23: (2012)
Selective Area Growth of polar, semi-polar, and non-polar III-Nitride nanostructures by MBE
24: (2012)
Selective Area Growth of polar, semi-polar, and non-polar III-Nitride nanostructures by MBE
25: (2013)
Advances on MBE Selective Area Growth of III-Nitride nanostructure: from nanoLEDs to pseudo substrates
26: (2013)
Functional materials in the nanotechnology era, what are they? What for?
27: (2013)
Selective Area Growth of III-N Nanostructrures for Optoelectronic Applications
28: (2013)
Selective Area Growth of InGaN/GaN nanorods on polar, semipolar and non-polar substrates: emission from UV to IR and white light
29: (2013)
Selective area growth of InGaN/GaN nanostructures for green and white light emission
30: (2014)
MBE Selective Area Growth nanostructures for core-shell light emitters and semi-polar pseudo substrates
31: (2014)
MBE Selective Area Growth of III-Nitride nanostructures: from nanoLEDs to pseudo substrates
32: (2014)
Ordered III-Nitride nanostructures for core-shell light emitters and semi-polar pseudo substrates,
33: (2014)
Selective Area Growth of III-Nitride nanostructures: from nanoLEDs to pseudo substrates
34: (2014)
Selective Area Growth of III-Nitride nanostructures: from nanoLEDs to pseudo substrates
35: (2014)
Selective Growth by MBE of InGaN/GaN Nanostructures on Polar and Semipolar Substrates
36: (2015)
Morphology and optical properties of ordered GaN and InGaN nanocolumns grown on non-polar and semipolar orientations
37: (2015)
Novel optoelectronics devices
38: (2015)
Selective Area Growth of InGaN/GaN Nanocolumnar Classical and Quantum Light Sources
39: (2015)
Selective Area Growth of InGaN/GaN Nanocolumnar structures for Classical and Quantum Light Sources
40: (2016)
MBE growth of ordered InGaN/GaN nanocolumns: applications to Classical/Quantum Light Sources and Pseudosubstrates
41: (2016)
MBE growth of ordered InGaN/GaN nanocolumns: applications to Classical/Quantum Light Sources and Pseudosubstrates (Conferencia Invitada)
42: (2016)
Selective Area Growth of III-Nitride Nanostructures by Plasma-Assisted MBE (Conferencia Invitada)
43: (2016)
Selective Area Growth of III-Nitride Nanostructures by Plasma-Assisted MBE (Conferencia Invitada)
44: (2016)
Selective Area Growth of III-Nitride Nanostructures by Plasma-Assisted MBE: some Basics and Applications (Conferencia Invitada)
45: (2017)
MBE growth of ordered III-Nitride nano/microrods: from classical/quantum light sources to nanotransistors and pseudosubstrates
46: (2017)
MBE growth of ordered InGaN/GaN nano/microrods: basics and applications to classical/quantum light sources, nanotransistors and pseudosubstrates
47: (2017)
MBE growth of ordered InGaN/GaN nano/microrods: basics and applications to light sources and pseudosubstrates
48: (2018)
III-Nitride Nanostructures grown by MBE: Basics and Applications
49: (2018)
III-Nitride Nanostructures: some Basics and Applications
50: (2018)
III-Nitride Nanostructures: some Basics and Applications
51: (2018)
MBE growth of ordered III-Nitride nano/microrods: basics and applications
52: (2018)
MBE growth of ordered III-Nitride nano/microrods: basics and applications
53: (2018)
MBE growth of ordered III-Nitride nano/microrods: basics and applications to light sources and pseudosubstrates
54: (2019)
MBE growth of ordered III-Nitride nanorods: basics and applications
18 Cursos, seminarios y tutoriales
1: (2008)
Profesor Yasushi Nanishi, Department of Photonics, School of Science and Engineering, Ritsumeikan University: Growth, doping and characterization of polar / non-polar, InN/InGaN and those nano-structure
2: (2009)
Dr. Atsushi Nakamura "Research activities of Oxide semiconductors at the Research Institute of Electronics" Research Institute of Electronics (RIE), Shizuoka University, 3-5-1 Johoku, Hamamatsu, Shizuoka (Japan) July 17th, 2008
3: (2010)
Dr. JAVIER MARTINEZ RODRIGO. "Nanohilos de Silicio: Fabricación y Aplicaciones"- 19/11/2010- -Instituto de Microelectrónica de Madrid-Madrid-(Spain)
4: (2010)
Pofessor MICHAEL E. MCHENRY. "Nanostructural Evolution in Materials for Use in Ferrofluids and Polymeric Nanocomposite Systems for Biomedical Applications" 05/03/2010- -Carnegie Mellon University. Materials Science and Engineering-Pittsburgh-(USA)
5: (2010)
Professor. KEVIN OGRADY. "New trends in exchange bias in sputtered polycrystalline films" 12/04/2010- -University of York-York -(USA)
6: (2010)
Professor KISHINO "Recent progress in GaN-based nanocolumns and related technology"-22/03/2010- -Sophia University, Japan-Tokyo-(Japan)
7: (2012)
Prof. Stefano Sanguinetti. Dipartimento di Scienza dei Materiali, Universitat di Milano Bicocca, Italy. "Semiconductor Quantum Nanostructures by Droplet Epitaxy"
8: (2012)
Profesor Enrique Calleja. Director del ISOM. "Generación de luz blanca eficiente con nanoestructuras semiconductoras"
9: (2012)
Zarko Gacevic.- "Constituent Blocks of III-Nitride Microcavities Grown by Molecular Beam Epitaxy"
10: (2013)
Type II InAs/GaSb superlattice infrared photodetectors. SEMINARIO INVITADO IMPARTIDO POR WENQUAN MA
11: (2014)
III-Nitride Nanowire Light Sources
12: (2014)
Nitride laser diodes grown by Plasma Assisted MBE
13: (2015)
III-Nitrides for solid state lighting: the road from white light generation to the 2014 Nobel Prize Physics Award.- Instituto de Ciencia de Materiales de Madrid
14: (2016)
Control of surface kinetics during the growth of III-nitrides on native substrates
15: (2017)
Seminario del ponente: Dr. Grzegorz Muziol: Nitride-based tunnel junctions grown by plasma assisted molecular beam epitaxy and their application to novel optoelectronic devices
16: (2017)
Seminario del ponente: Dra. Åsa Haglund: Progress and challenges in electrically pumped GaN-based VCSELs
17: (2017)
Seminario del ponente Prof. Felix Holzner: Fabrication of superior 2D and 3D nano-devices using NanoFrazor lithography
18: (2018)
Scanning Probe Microscopy: Exploring the Information Dimension.- Dr. Sergei V. Kalinin
21 Otras Publicaciones
1: (2010)
DR. E. CALLEJA et al. "La iluminación del futuro se basará en LEDs". Revista UPM http://www.upm.es/institucional/UPM/CanalUPM/Noticias/ea56810366056210VgnVCM10000009c7648aRCRD
2: (2010)
DR. ENRIQUE CALLEJA et al. "La iluminación del futuro se basará en LEDs". EFO Internacional http://efo-international.blogspot.com/search/label/iluminaci%C3%B3n%20LED
3: (2010)
DR. ENRIQUE CALLEJA et al. "La iluminación del futuro se basará en LEDs". Madri+d, un lugar para la ciencia y la tecnología http://www.madrimasd.org/informacionidi/noticias/noticia.asp?id=42441&tipo=g
4: (2010)
DR. ENRIQUE CALLEJA et al, "La iluminación del futuro se basará en LEDs". Servicio de Información y noticias científicas. http://www.agenciasinc.es/esl/Noticias/La-iluminacion-del-futuro-se-basara-en-LEDs
5: (2010)
DR. ENRIQUE CALLEJA et al. "La iluminación del futuro se basará en LEDs".LED BOX nature power light http://www.ledbox.es/blog/ciencia/la-iluminacion-del-futuro-se-basara-en-led
6: (2010)
DR. ENRIQUE CALLEJA et al. "La iluminación del futuro se basará en LEDs". RADIOMUNERA.COM (La radio de INTERNET) http://www.radiomunera.com/sitio/contenido_detalle.php?iddix=467&dsx=Tecnolog%EDa&idarticulo=21263
7: (2010)
DR. ENRIQUE CALLEJA et al. "La iluminación del futuro se basará en LEDs".Universia. http://noticias.universia.es/ciencia-nn-tt/noticia/2010/01/27/655920/iluminacion-futuro-basara-leds.html
8: (2012)
Noticia divulgada por Euroresidentes: "El Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM) de la Universidad Politécnica de Madrid reconocido como Centro Internacional de Nanociencia y de Nanotecnología"
9: (2012)
Prof. Enrique Calleja Pardo (Director del ISOM):
10: (2013)
artículo en CanalUPM noticias: "Desarrollan un biosensor de glucosa para el diagnóstico clínico"
11: (2013)
artículo en Infodiabético, noticias para diabéticos: 'Desarrollan un biosensor de glucosa para el diagnóstico clínico'
12: (2013)
artículo en Innovaticias/Tecnologías: 'Desarrollan un biosensor de glucosa para el diagnóstico clínico'
13: (2013)
artículo en mi+d: 'Desarrollan un biosensor de glucosa para el diagnóstico clínico'
14: (2013)
artículo en Semiconductor Today, Compounds and Advanced Silicon: 'Direct growth of InGaN on silicon'
15: (2013)
artículo en SINC: 'Desarrollan un biosensor de glucosa para el diagnóstico clínico'
16: (2013)
El ISOM se ha incorporado al Portal MERIL (Mapping of the European Research Infrastructure Landscape)
17: (2014)
Nobel de física para los inventores de los LEDs de luz azul y blanca
18: (2015)
N. Ul Hassan Alvi, P.E.D. Soto Rodríguez, P. Aseev, V.J. Gómez, A. Ul Hassan Alvi, W. Hassan, M. Willander, R. Nötzel, 'InN/InGaN quantum dot photoelectrode: Efficient hydrogen generation by water splitting at zero voltage' (Nano Energy) http://goo.gl/fJRYTz Dr. Naveed Halvi nhalvi@isom.upm.es
19: (2015)
P. Aseev, P.E.D. Soto Rodríguez, V.J. Gómez, N. Ul Hassan Alvi, J.M. Manuel, F.M. Morales, J.J. Jimenez, R. García, A. Senichev, C. Lienau, E. Calleja and R. Nötzel, 'Near-infrared emitting In-rich InGaN layers grown directly on Si: Towards the whole composition range' (Applied Physics Letters) http://www.semiconductor-today.com/news_items/2015/mar/maxplanck_180315.shtml Pavel Aseev pavel.aseev@isom.upm.es
20: (2015)
P.E.D.Soto Rodríguez, P. Aseev, VJ. Gómez, P.Kumar, N. Ul Hassan Alvi, E. Calleja, JM. Manuel, FM. Morales, JJ. Jiménez, R. García, A Senichev, Ch. Lienau R. Nötzel. Artículo 'Indium nitride surface quantum dots on silicon substrates', en Revista Semiconductor Today http://www.semiconductor-today.com/news_items/2015/jan/updm_300115.shtml Paul Soto p.soto@isom.upm.es
21: (2015)
Visionado del experimento del ISOM en programa 'El hormiguero' de Antena 3 Televisión, España. El día 19 de enero 2015 se emitió un experimento montado en el ISOM por el Dr. José María Ulloa Herrero, consistente en hacer invisibles objetos mediante óptica geométrica (Paraxial cloaking). http://www.antena3.com/programas/el-hormiguero/secciones/ciencia-marron/maquina-invisibilizadora-upm_2015011900391.html Dr. José María Ulloa Herrero jmulloa@isom.upm.es
142 Ponencia en Congresos
1: (2007)
J. M. Ulloa, P. M. Koenraad, E. Gapihan, A. Letoublon, N. Bertru "Double capping of InAs/InP (311)B quantum dots studied by cross-sectional scanning tunneling microscopy" One day Quantum Dot Meeting 2007 Nottingham (UK) 2 al 5 de abril de 2007 2007
2: (2007)
E. Calleja "Self-assembled MBE growth of III-Nitride Nanocolumnar Heterostructures on Si substrates" European Materials Research Society Meeting (E-MRS) 2007 Estrasburgo (Francia) 28 de mayo al 1 Junio de 2007
3: (2007)
G. Fransen, T. Suski, J. Ristic, E. Calleja. "Anomalous Hydrostatic Pressure Dependence Of Pl In Pambe-Grown Nanocolumnar Gan And GaN/AlGaN Qdiscs". 14th European Molecular Beam Epitaxy Workshop 2007 Sierra Nevada, Granada (ESPAÑA) 5 al 7 de marzo de 2007
4: (2007)
G. Fransen, T. Suski, J. Ristic, E. Calleja "Anomalous Hydrostatic Pressure Dependence Of Pl In Pambe-Grown Nanocolumnar Gan And Gan/Algan Qdiscs" 14th European Molecular Beam Epitaxy Workshop 2007 Sierra Nevada, Granada (ESPAÑA) 5 al 7 de marzo de 2007
5: (2007)
G.Koblmueller, S. Fernandez-Garrido, J. S. Brown, E.Calleja, J. S. Speck "Improved growth mode diagram for plasma-assisted MBE growth of (0001) GaN"14th European Molecular Beam Epitaxy Workshop 2007 Sierra Nevada, Granada (ESPAÑA) 5 al 7 de marzo de 2007
6: (2007)
I. W. D. Drouzas, J. M. Ulloa, P. M. Koenraad, D. J. Mowbray, M. A. Migliorato, M. J. Steer, H.Y. Liu, M. Hopkinson "InAs self-assembled quantum dots capped with a GaAsSb strain reducing layer: Morphology of a nanostructure with novel optical properties" International Conference on Electronic Properties of Two-dimensional Systems and Modulated Semiconductor Structures (EP2DS 17- MSS 13) Génova (Italia) 15 al 20 de julio de 2007
7: (2007)
I. W. D. Drouzas, J. M. Ulloa, P. M. Koenraad, D. J. Mowbray, M. A. Migliorato, M. J. Steer, H.Y. Liu, M. Hopkinson "InAs self-assembled quantum dots capped with a GaAsSb strain reducing layer: Morphology of a nanostructure with novel optical properties" UK Compound semiconductors 2007 Sheffield (UK) 4 al 5 de Julio de 2007
8: (2007)
I. W.D. Drouzas, J. M. Ulloa, P. M. Koenraad, D. J. Mowbray, M. Steer, H. Y. Liu, M. Hopkinson "InAs self-assembled quantum dots with a GaAsSb strain reducing layer: Structural and compositional analysis by cross sectional scanning tunnelling microscopy"One day Quantum Dot Meeting 2007 Nottingham (UK) 2 al 5 de abril de 2007
9: (2007)
J. Grandal, A.Bengoechea, M.A. Sánchez-García, E. Calleja, E. Luna, A. Trampert, M. Niebelschütz, V. Cimalla "Structural Characterization Of Inn-Based Layers Grown On Si (111) And Si (001) Substrates By Mbe" 14th European Molecular Beam Epitaxy Workshop 2007 Sierra Nevada, Granada (ESPAÑA) 5 al 7 de marzo de 2007
10: (2007)
J. Grandal, M.A. Sánchez-García, E. Calleja, S. Lazic, J.M. Calleja, E. Luna, A. Trampert "Characterization Of InN Nanocolumns Grown On Si (001) Substrates By Plasma Assisted Molecular Beam Epitaxy" European Material Research Society Spring Conference 2007 Estrasbourg (Francia) 28 de mayo al 1 Junio de 2007
11: (2007)
J. Grandal, M.A. Sánchez-García, E. Calleja, S. Lazic, J.M. Calleja, E. Luna, A. Trampert "Characterization Of Inn Nanocolumns Grown On Si (001) Substrates By Plasma Assisted Molecular Beam Epitaxy"European Material Research Society Spring Conference 2007 Estrasbourg (Francia) 28 de mayo al 1 Junio de 2007
12: (2007)
J. Grandal, M.A. Sánchez-García, E. Calleja, S. Lazic, J.M. Calleja, E. Luna, A. Trampert "Structural and optical characterization of Inn/Ingan multiple quantum wells grown by plasma assisted-MBE" 7th International Conference on Nitride Semiconductors (ICNS07) Las Vegas (NV), USA 16 al 21 de septiembre de 2007
13: (2007)
J. M. Ulloa, C. Çelebi, P. Offermans, P.M. Koenraad, A. Simon, E. Gapihan, A. Letoublon, N. Bertru, I. Drouzas, D.J. Mowbray, M.J. Steer, M. Hopkinson "Capping of InAs quantum dots studied at the atomic scale by cross-sectional scanning tunneling microscopy" Microscopy of Semiconducting Materials XV Cambridge (UK) 2 al 5 de abril de 2007
14: (2007)
J. M. Ulloa, C. Çelebi, P. Offermans, P.M. Koenraad, A. Simon, E. Gapihan, A. Letoublon, N. Bertru, I. Drouzas, D.J. Mowbray, M.J. Steer, M. Hopkinson "Capping of InAs quantum dots studied at the atomic scale by cross-sectional scanning tunneling microscopy" 14th European Molecular Beam Epitaxy Workshop Granada (España) 5 al 7 de marzo de 2007
15: (2007)
J. Ristic, C. Rivera, S. Fernández-Garrido, E. Calleja, A. Trampert, K. H. Ploog, M- Povoloskyi, A. Di Carlo ¿Improved growth mode diagram for plasma-assisted MBE growth of (0001) GaN¿ 7th International Conference on Nitride Semiconductors Bremen (Alemania) 16 al 21 de septiembre de 2007
16: (2007)
J.H. Blokland, J.M. Ulloa, U. Zeitler, P.C.M. Christianen, P.M. Koenraad, D. Reuter, A.D. Wieck, J.C. Maan "Shell-filling and correlation effects of holes in InAs quantum dots" International Conference on Electronic Properties of Two-dimensional Systems and Modulated Semiconductor Structures (EP2DS 17- MSS 13) Genova (Italia) 15 al 20 de julio de 2007
17: (2007)
J.M. Ulloa, A. Wierts, C. Çelebi, P.M. Koenraad, H. Boukari, L. Maingault, H. Mariette "Cross-Sectional Scanning Tunneling Microscopy on II-VI Semiconductor Multilayer Structures"13th International Conference on II-VI Compounds Jeju (Corea) 10 al 14 de septiembre 2007
18: (2007)
J.M. Ulloa, P.M. Koenraad, E. Gapihan, A. Letoublon, N. Bertru, D. Fuster, Y. Gonzalez, L. Gonzalez "Atomic scale structural characterization of long wavelength InAs/InP quantum dots and wires" International Workshop on Long Wavelenght Quantum Dots: Growth and Applications Rennes (Francia) 5 al 6 de Julio de 2007
19: (2007)
K. Bejtka, R.W. Martin, S. Fernández-Garrido, A. Redondo-Cubero, F. González-Posada, E. Calleja "Composition and luminescence of AlInGaN layers grown by MBE" 14th European Molecular Beam Epitaxy Workshop 2007 Sierra Nevada, Granada (ESPAÑA) 5 al 7 de marzo de 2007
20: (2007)
K. Bejtka, R.W. Martin, S. Fernández-Garrido, E. Calleja, A. Redondo-Cubero, F. González-Posada "Composition and luminescence of AlInGaN layers grown by PA-MBE" United Kingdom Nitride Consortium 2007 Cambridge (U.K) 4 al 5 de enero de 2007
21: (2007)
M. Utrera, J. Ristić, S. Fernández-Garrido, L. Cerutti, G. Fuentes, E. Calleja, A. Trampert, U. Jahn, K. H. Ploog "Ordered growth of GaN Nanostructures on Si by MBE" 14th European Molecular Beam Epitaxy Workshop 2007 Sierra Nevada, Granada (España) 5 al 7 de marzo de 2007
22: (2007)
M. A.Sánchez-García, J. Grandal, A. Bengoechea, D. López-Romero,E. Calleja, S. Lazic, J.M. Calleja, E. Luna, A. Trampert, M. Niebelschütz, V. Cimalla, O. Ambacher "MBE Growth And Characterization Of Inn On Silicon Substrates"European Materials Research Society Meeting (E-MRS) 2007 Estrasburgo (Francia) 28 de mayo al 1 Junio de 2007
23: (2007)
M. Niebelschütz.V. Cimalla, O. Ambacher, T. Machleidt, J. Ristic, J. Grandal, M. A. Sánchez-García. E. Calleja "Space Charged Region In Gan And Inn Nanocolumns Investigated By Atomic Force Microscopy" 7th International Conference on Nitride Semiconductors 2007 Las Vegas (NV), USA 16 al 21 de septiembre de 2007
24: (2007)
R. Gargallo-Caballero, M. Sanz, Á. Guzmán, E. Calleja, E. Muñoz "Quantum Dot Infrared Photodetector for mid-infrared detection at high temperatures".6th Spanish Conference on Electronic Devices CDE-07 El Escorial, Madrid (España) 31 de enero al 2 de febrero de 2007
25: (2007)
R. Gargallo-Caballero, M. Sanz, Á. Guzmán, E. Calleja, E. Muñoz "Quantum Dot Infrared Photodetector for mid-infrared detection at high temperatures"6th Spanish Conference on Electronic Devices CDE-07 El Escorial, Madrid (España) 31 de enero al 2 de febrero de 2007
26: (2007)
R. Gargallo-Caballero, M.Sanz, Á.Guzmán, E.Calleja, E.Muñoz "High Temperature Multiquantum Dot Infrared Photodetectors Using InAs Self-Assembled Quantum Dots" 6th Spanish Conference on Electronic Devices CDE-07. El Escorial, Madrid (España) 31 de enero al 2 de febrero de 2007
27: (2007)
R. Gargallo-Caballero, M.Sanz, Á.Guzmán, E.Calleja, E.Muñoz "High Temperature Multiquantum Dot Infrared Photodetectors Using Inas Self-Assembled Quantum Dots" 6th Spanish Conference on Electronic Devices CDE-07 El Escorial, Madrid (España) 31 de enero al 2 de febrero de 2007
28: (2007)
S. Fernández-Garrido, G. Koblmüller, E. Calleja, J. S. Speck ¿In-Situ Gan Decomposition Analysis By Quadrupole Mass Spectrometry And Reflection High-Energy Electron Diffraction¿ 14th European Molecular Beam Epitaxy Workshop 2007 Sierra Nevada, Granada (ESPAÑA) 5 al 7 de marzo de 2007
29: (2007)
S. Fernández-Garrido, G. Koblmüller, E. Calleja, J. S. Speck: "In-Situ Gan Decomposition Analysis By Quadrupole Mass Spectrometry And Reflection High-Energy Electron Diffraction". 14th European Molecular Beam Epitaxy Workshop 2007 Sierra Nevada, Granada (ESPAÑA) 5 al 7 de marzo de 2007
30: (2007)
S. Lazic, E. Gallardo, J. M. Calleja, F. Agulló-Rueda, J. Grandal, M. A. Sánchez-García, E. Calleja, A. Trampert, E. Luna "Raman Scattering By Coupled Plasmon-Lo Phonons In Inn Nanocolumns" 7th International Conference on Nitride Semiconductors (ICNS07) Las Vegas (NV), USA 16 al 21 de septiembre de 2007
31: (2007)
S. Lazic, E. Gallardo, J.M. Calleja, F. Agulló-Rueda, J. Grandal, M.A. Sánchez-Garcia, E. Calleja "Raman Scattering By Longitudinal Optical Phonons In Inn Nanocolumns Grown On Si(111) And Si(001) Substrates" 13th International Conference on Modulated Semiconductor Structures (MSS-13) Génova (Italia) 15 al 20 de julio de 2007
32: (2007)
S. Lazic, J.M. Calleja, F.Agulló-Rueda, M.A. Sánchez-García, J. Grandal, E. Calleja, A. Trampert "Inelastic light scattering by the longitudinal optical phonons in InN nanocolumns and compact layers" Physics of Light-Matter Coupling in nanostructures La Habana (Cuba) 12 al 17 de abril de 2007
33: (2007)
S. Lazić, E. Gallardo, J. M. Calleja, F. Agulló-Rueda, J. Grandal, M. A. Sánchez-García, E. Calleja, A. Trampert, E. Luna ¿Raman Scattering By Coupled Plasmon-Lo Phonons In Inn Nanocolumns¿ 7th International Conference on Nitride Semiconductors (ICNS07) Las Vegas (NV), USA 16 al 21 de septiembre de 2007
34: (2007)
S. Lazić, E. Gallardo, J.M. Calleja, F. Agulló-Rueda, J. Grandal, M.A. Sánchez-Garcia, E. Calleja "Raman Scattering By Longitudinal Optical Phonons In Inn Nanocolumns Grown On Si(111) And Si(001) Substrates" 13th International Conference on Modulated Semiconductor Structures (MSS-13) Génova (Italia) 15 al 20 de julio de 2007
35: (2007)
S. Lazić, J.M. Calleja, F.Agulló-Rueda, M.A. Sánchez-García, J. Grandal, E. Calleja, A. Trampert "Inelastic light scattering by the longitudinal optical phonons in InN nanocolumns and compact layers" Physics of Light-Matter Coupling in nanostructures La Habana (Cuba) 12 al 17 de abril de 2007
36: (2007)
U. Jahn, E. Calleja, J. Ristic, A. Trampert, C. Rivera "Spatially resolved luminescence spectroscopy of single GaN/(Al,Ga)N quantum disks" 7th International Conference on Nitride Semiconductors (ICNS) Las Vegas (Nevada, USA) 16 al 21 de septiembre de 2007
37: (2008)
A diagram to grow InAlN layers on (0001)GaN by plasma-assisted molecular beam epitaxy International workshop on nitrides Semiconductors 2008, 6-10 de Octubre 2008 Montreux, (Suiza), 2008
38: (2008)
Characterization of InN nanocolumns grown by PA-MBE on a-plane GaN/r-plane Al2O3 templates International Workshop on Nitride Semiconductor 2008 Montreux, (Suiza), 2008
39: (2008)
Correlating Composition and Luminescence Variations in AlInGaN epilayers 9th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors, 2008 Toledo (España), 2008
40: (2008)
Correlating Composition and Luminescence Variations in III-Nitride Semiconductor Alloys Microscopy & Microanalysis Meeting Albuquerque, New Mexico (USA), 2008
41: (2008)
Enhancement of N incorporation into (Ga)InAsN quantum dots International Symposium on Compound Semiconductors (ISCS) Friburgo (Alemania), 2008
42: (2008)
Growth and characterization of lattice-matched InAlN/GaN Bragg reflectors grown by plasma-assisted molecular beam epitaxy International workshop on nitrides Semiconductors 2008, 6-10 de Octubre 2008. Conferences Proceedings. Montreux, (Suiza), 2008
43: (2008)
Growth of InN nanocolumns on a-plane GaN templates 15th International Conference on Molecular Beam Epitaxy Vancouver (Canada), 2008
44: (2008)
Growth of InN on Silicon substrates Mini-Symposium on Physics and Applications of InN and InGaN Semiconductor Materials The Rank Prize Funds Grasmere (Inglaterra), 2008
45: (2008)
In-situ GaN decomposition analysis by quadrupole mass spectrometry and reflection high-energy electron diffraction International workshop on nitrides Semiconductors 2008, 6-10 de Octubre 2008 Montreux, (Suiza), 2008
46: (2008)
Investigation and Manipulation of Space Charged Regions in GaN and InN Nanocolumns International Conference on Electronic Materials Sydney, (Australia), 2008
47: (2008)
Photoemission and Optical Studies of Electron Accumulation at InN and In-rich InGaN Surfaces
48: (2008)
Spontaneous Growth of III-Nitride nanocolumns by Molecular Beam Epitaxy: Optical, Structural and Electrical Characterization Ecole Polytechnique Fédérale de Lausanne Lausanne (Suiza), 2008
49: (2008)
The influence of the Ga content on the N incorporation in InAsN and GaInNAs Quantum Dots 7th International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces (ESPS-NIS), Les Arcenaulx, Marseille (Francia), 2008
50: (2008)
Time-resolved photoluminescence of GaN nanocolumns grown by molecular beam epitaxy on Si Int. Workshop on Nitride Semiconductors (IWN 2008) Montreux (Suiza), 2008
51: (2009)
A. REDONDO-CUBERO, J. PEREIRO, J. GRANDAL, K. LORENZ, N. FRANCO, R. GAGO, E. MUÑOZ, M. A. SÁNCHEZ-GARCÍA, E. CALLEJA, E. ALVES "Structural study of the epitaxial growth in InGaN/GaN heterostructures by ion beam analysis" 33rd Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2009) Málaga (Spain), 2009.
52: (2009)
A. REDONDO-CUBERO, K. LORENZ, N. FRANCO, S. FERNÁNDEZ-GARRIDO, R. GAGO, P. J. M. SMULDERS, E. MUÑOZ, E. CALLEJA, I. M. WATSON, E. ALVES "Accurate measurement of strain in semiconductors heterostructures by high-energy ion channelling: the influence of steering effects" 19th International Conference on Ion Beam Analyis Cambridge (UK), 2009
53: (2009)
E. CALLEJA ET AL. "Challenges In The Investigation Of III-V Nanocolumns (Ncs) Using Plan-View Transmission Electron Microscopy: Application To Inn Ncs Grown On Si Substrates" 33rd Workshop On Compound Semiconductor Devices And Integrated Circuits Wocsdice Malaga (Spain), 2009
54: (2009)
E. CALLEJA ET AL. "Growth and Characterization of Lattice-Matched Inaln/Gan Bragg Reflectors Grown By Plasma Assisted Molecular Beam Epitaxy" 15th European Molecular Beam Epitaxy Workshop Zakopane (Poland), 2009
55: (2009)
E. CALLEJA ET AL. "Inn/Ingan Multiple Quantum Wells Emitting At 1.5 µm" 15th European Molecular Beam Epitaxy Workshop Zakopane (Poland), 2009
56: (2009)
E. CALLEJA ET AL. "Modulating and Probing Surface States In Single Inn And Ingan Nanorods" 2009 MRS Spring Meeting San Francisco (USA), 2009
57: (2009)
E. CALLEJA ET AL. "Recent Results on III-Nitride Nanorods and Inn Qws: Growth Mechanisms, Basics And Devices" United Kingdom Nitride Consortium Annual Meeting University of Oxford (England), 2009
58: (2009)
E. SILLERO, O.A. WILLIAMS, V. LEBEDEV, V. CIMALLA, C. C. RÖHLIG, C. E. NEBEL, F. CALLE "Nanocrystalline diamond microelectromechanical resonators" 33rd Workshop on Compound Semiconductors and Integrated Circuits, WOCSDICE 2009. Malaga (Spain), 2009
59: (2009)
J. GRANDAL, A. BENGOECHEA, M. A. SÁNCHEZ-GARCÍA, E. CALLEJA, E. LUNA, A. TRAMPERT, E. GALLARDO, J.M. CALLEJA "InN/InGaN multiple quantum wells emitting at 1.5 µm" 15th European Workshop on Molecular Beam Epitaxy Zakopane (Poland), 2009
60: (2009)
J. IBAÑEZ, S. HERNÁNDEZ, E. ALARCÓN LLADÓ, R. CUSCO, L. ARTUS, E. CALLEJA, S.V. NOVIKOW, C.T. FOXON "Far infrared Transmission in AlGaN Thin Films: Normal and Oblique incidence" 8th International Conference on Nitride Semiconductors (ICNS-8) Jeju (Korea), 2009
61: (2009)
M. F. ROMERO, M. J. UREN, A. JIMÉNEZ, R. CUERDO, C. DUA, F. CALLE, E. MUÑOZ "Thermal storage effects in Ni/Au-gate" 7th Spanish Conference on Electronic Devices CDE-09.IEEE Electron Device Letters, 258-261,ISBN: 978-1-4244-2838-0 Santiago de Compostela (Spain), 2009
62: (2009)
R. GARGALLO-CABALLERO, A. GUZMÁN, M. HOPKINSON, A. HIERRO, J. M. ULLOA, E. CALLEJA "Optoelectronic devices based on (Ga,In)(As,N) Quantum dots" 15th European Molacular Beam Epitaxy Workshop Zakopane (Poland), 2009
63: (2009)
S. FERNANDEZ-GARRIDO, Z. GACEVIC, E. CALLEJA, A. REDONDO-CUBERO, R. GAGO, E.MUÑOZ "A Comprehensive Diagram to Grow Inaln Alloys By Plasma-Assisted Molecular Beam Epitaxy" 15th European Molecular Beam Epitaxy Workshop Zakopane (Poland), 2009
64: (2009)
Z. GACEVIC, S. FERNÁNDEZ-GARRIDO, E. CALLEJA, E.LUNA, A. TRAMPERT "Growth and characterization of lattice-matched InAlN/GaN Bragg reflectors grown by plasma assisted molecular beam epitaxy" 15th European Molecular Beam Epitaxy Workshop Zakopane (Poland), 2009
65: (2009)
Z. GACEVIC, S. FERNÁNDEZ-GARRIDO, E. CALLEJA "Current status and further challenge in MBE growth of lattice-matched InAlN/GaN Bragg reflectors" 8th International Conference on Nitride Semiconductors Jeju (Korea), 2009
66: (2009)
Z. GACEVIC, S. FERNÁNDEZ-GARRIDO, E. CALLEJA "New approach to grow high reflectivity Al(Ga)N bragg reflectors by plasma-assited molecular beam epitaxy" 8th International Conference on Nitride Semiconductors Jeju (Korea), 2009
67: (2010)
A. BENGOECHEA, J. GRANDAL, S. FERNANDEZ-GARRIDO, M.A. SANCHEZ-GARCIA, F. BARBAGINI, P. LEFEBVRE, E. CALLEJA, E. LUNA, A. TRAMPERT. "Selective area growth of GaN nanocolumns by rf-plasma-assisted MBE". 16th International MBE Conference Berlin (Germany) 2010
68: (2010)
P. LEFEBVRE, S. ALBERT, J. RISTIC, M.-A. SÁNCHEZ-GARCÍA, E. CALLEJA. "Carrier localization and surface effects in InGaN nanocolumns grown by plasma-assisted molecular beam epitaxy" Int. Workshop on Nitride Semiconductors - IWN 2010 Tampa (USA), 2010
69: (2010)
S. ALBERT, J. GRANDAL, M.A. SANCHEZ-GARCIA, P. LEFEBVRE, J. RISTIC, E. CALLEJA, A. VILALTA-CLEMENTE, B. LACROIX, P. RUTERANA, E. LUNA, U. JAHN, A. TRAMPERT. "MBE growth and characterization of InN/InGaN thin films and nanostructures on GaN templates and Si(111) substrates" 16th International MBE Conference Berlin (Germany) 2010
70: (2010)
S. FERNÁNDEZ-GARRIDO, J. GRANDAL, P. LEFEBVRE, M.A. SÁNCHEZ-GARCÍA, E.CALLEJA. "GaN nanocolumns grown on Si(111) by plasma-assisted MBE: Correlation of structural and optical properties with growth parameters". Int. Symp. on Growth of III Nitrides (ISGN3) Montpellier (France) 2010
71: (2011)
A. Eljarrat, Z. Gacevic, S. Fernández-Garrido, E. Calleja, C. Magén, S. Estradé, F. Peiró "Optical and structural properties of InAlN/GaN Bragg reflectors examined by transmission electron microscopy and electron energy loss spectroscopy"
72: (2011)
Control of the morphology on selective area growth of GaN nanocolumns by rf-plasma-assisted
73: (2011)
E-beam nanopatterning for the selective area growth of III-V nitride nanorods
74: (2011)
Efficient phosphor-free, white light emission from ordered
75: (2011)
Electrochemical capacitance voltage profiling of transition from surface electron depletion to accumulation with increasing In-content in InGaN alloys
76: (2011)
Emission control of InGaN nanocolumns with growth temperature
77: (2011)
Fabrication of GaN nanorods by focused ion beam
78: (2011)
Growth and characterization of InGaN/GaN quantum dots for violet/blue applications
79: (2011)
Growth and characterization of InGaN/GaN quantum dots for violet/blue applications
80: (2011)
Growth and characterization of InGaN/GaN quantum dots for violet/blue applications
81: (2011)
Optical and structural properties of InAlN/GaN Bragg reflectors examined by transmission electron microscopy and electron energy loss spectroscopy
82: (2011)
Plasma-assisted MBE growth of III-N nanorods: applications to optoelectronic devices and photovoltaics
83: (2011)
Selective area growth of GaN nanocolumns by rf-plasma-assisted MBE at low temperature and under nitrogen-rich conditions
84: (2011)
STEM-HAADF-EELS and HRTEM assessment of cubic-hexagonal transitions and In-enrichment in InAlN/GaN Bragg reflectors grown by plasma-assisted Molecular Beam Epitaxy
85: (2011)
Structural properties of InAlN single layers nearly latice-matched to GaN grown by plasma assisted molecular beal epitaxy
86: (2011)
Structural properties of InAlN single layers nearly latice-matched to GaN grown by plasma assisted molecular beal epitaxy
87: (2011)
Substrate nanopatterning by e-beam lithography to growth ordered arrays of III-nitride nanodetectors, white light emitters, and solar cells, Marie Curie Researchers Symposium
88: (2011)
Surface-related optical properties of GaN and InGaN nanocolumns
89: (2011)
Tomography of multilayered materials for optoelectronic applications
90: (2011)
Transmission Electron Microscopy and Electron Energy Loss Spectroscopy investigations of InAlN/GaN Bragg reflectors grown by plasma-assisted Molecular Beam Epitaxy
91: (2011)
Transmission Electron Microscopy and Electron Energy Loss Spectroscopy investigations of InAlN/GaN Bragg reflectors grown by plasma-assisted Molecular Beam Epitaxy
92: (2011)
Understanding of the nucleation and growth of ordered GaN nanocolumns by MBE on GaN
93: (2011)
Understanding the selective area nucleation and growth of GaN Nanocolumns by MBE using Ti nanomasks
94: (2011)
Z. Gacevic, P. Lefebvre, F. Bertram, G. Schmidt, P. Veit, J. Christen, and E. Calleja "Growth and characterization of InGaN/GaN quantum dots for violet/blue applications"
95: (2011)
Z. Gacevic, S. Fernández-Garrido, E. Calleja, D. Hosseini, S. Estrade and F. Peiró "Structural properties of InAlN single layers nearly latice-matched to GaN grown by plasma assisted molecular beal epitaxy"
96: (2012)
A comprehensive diagram to grow (0001) InGaN alloys by molecular beam epitaxy
97: (2012)
AlN/GaN DBR layer low-loss EELS-HAADF compositional mapping
98: (2012)
EELS-HAADF combination for characterization of a new AlN/GaN DBRs growth method
99: (2012)
EELS-HAADF spectrum imaging for characterization of (AlGa)N multilayer heterostructures
100: (2012)
Electrical characterization of single GaN/InGaN nanorods grown by selective-area MBE
101: (2012)
Graphene Electrodes For Nano-LEDs
102: (2012)
Growth and characterization of ordered InGaN/GaN nanocolumnar structures on GaN/sapphire and Si (111) substrates
103: (2012)
Growth of InN quantum dots on InGaN with high In composition
104: (2012)
High In composition InGaN for InN quantum dot intermediate band solar cells
105: (2012)
Hybrid MBE/MOVPE grown III-nitride microcavity
106: (2012)
Influence of substrate orientation on the morphology and optical properties of selective area growth GaN nanocolumns and InGaN quantum disks
107: (2012)
NanoLEDs with graphene electrode
108: (2012)
Selective area growth of GaN/InGaN nanocolumnar heterostructures on polar, semipolar and non-polar substrates
109: (2013)
A Simple Method to Model Bragg Reflectors with Transient Layers Formed at the Interfaces
110: (2013)
AFM electrical characterization of graphene nano LEDs
111: (2013)
Coalescence of selective area growth GaN by MBE, for high quality polar, non polar and semi polar templates
112: (2013)
Electron Energy Loss Spectroscopy for the analysis of AlN/GaN interfaces in MBE grown distributed Bragg Reflectors
113: (2013)
Growth and characterization of ordered In(Ga)N/GaN nanocolumnar structures on Si (111) substrates with In contents between 0 and 100%
114: (2013)
Localized emission from the apex of GaN/(In,Ga)N/GaN
115: (2013)
MBE selective area growth of polar, non-polar and semi-polar GaN and InGaN/GaN nanostructures
116: (2013)
Selective area growth of In(Ga)N/GaN nanocolumns by molecular beam epitaxy on Si(111): from ultraviolet to infrared emission
117: (2013)
Selective area growth of In(Ga)N/GaN nanocolumns on silicon substrates
118: (2013)
Selective area growth of InGaN/GaN nanostructures for green and white light emission
119: (2013)
Selective area growth of polar, non-polar and semi-polar GaN and InGaN/GaN nanostructures
120: (2013)
Spectroscopy for the analysis of AlN/GaN interfaces in MBE grown distributed Bragg Reflectors
121: (2013)
TEM study of spontaneous formation of InGaN nanowall network directly on Si for PV
122: (2013)
TEM study of spontaneous formation of InGaN nanowall network directly on Si for PV
123: (2014)
XRD analysis of InGaN uniform layers grown on Si (111) without any buffer layers and on Sapphire
124: (2015)
A two-color emitting ingan nanodisk as a site-controlled source of classical and quantum light
125: (2015)
Direct imaging of single InGaN/GaN core-shell microrods using nano-scale Scanning Transmission Electron Microscopy Cathodoluminescence
126: (2015)
Formation Mechanisms of GaN nanowires grown by slective area growth homoepitaxy
127: (2015)
InGaN-on-Si for solar water splitting: compact layers, nanowalls and nanocolumns
128: (2015)
Nanotechnology research for optoelectronic applications at ISOM
129: (2015)
Selective Area Growth of III- Nitride Nanorods on polar, semi-polar and non-polar orientations: Device applications
130: (2015)
Valence EELS analysis of multiple InGaN-QW structure for electronic properties
131: (2016)
Comparative Study of InGaN Layers Grown by PA-MBE on Si(111) Using Different Buffer Layers and Growth Conditions
132: (2016)
Dynamic acoustic control of single photon emission from III-Nitride nanowire heterostructures
133: (2016)
Fabrication on III-nitride dot-ín-a-wire single photon sources
134: (2016)
Nonpolar, semipolar and polar III-nitride dot-in-a-wire sources of linearly polarized single photons
135: (2016)
Photoelectrochemical properties of full composition InxGa1-xN/Si photoanodes
136: (2017)
Emission of linearly polarized single photons from quantum dots contained in nonpolar, semipolar and polar sections of pencil-Like InGaN/GaN Nanowires
137: (2017)
Growth of self-assembled AIN nanowires on SiO2/Si substrates
138: (2017)
InGaN single photon emitters in nanowires: Properties and dynamic control
139: (2017)
Studies of free charge carrier properties in AlGaN and InGaN based structures by infrared and terahertz optical Hall effect
140: (2018)
Nanoscale Imaging of Individual AlN/GaN/AlN Quantum Disk embedded in GaN Nanowires
141: (2018)
Selective area growth of GaN nanocolumns with extremely low photoluminescence linewidth of <0.6 meV
142: (2019)
InAlN growth with high nitrogen-flux by plasma-assisted molecular-beam epitaxy
Explotación de Resultados y Transferencia de Tecnología
7 Patentes
1: (2012)
Light-emitting diode chip. E2011,0717 DE X /3265/2011E23319DE
2: (2012)
Light-emitting diode chip. E2011,0717 DE X /3265/2011E23319DE
3: (2015)
Temperature-Stable All-InGaN White Nanorod LEDs
4: (2019)
Light-emitting diode chip
5: (2019)
Non-polar III-Nitride binary and ternary materials, method for obtaining thereof and uses
6: (2019)
Phosphor-free all InGaN White Light LEDs using Nanocolumns
7: (2019)
Process for manufacturing non-polar III-nitride materials, product obtained thereof and devices comprising said material
• TOMA DE DATOS DE MEMORIAS Y CV
• UPM.ES
S2i 2021 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNPACTO (IPT-020000-2010-22)
