Observatorio de I+D+i UPM
• ESPAÑOL
• ENGLISH
INVESTIGADORES
ESTRUCTURAS DE I+D+I
ACTIVIDAD INVESTIGADORA
INNOVACIÓN
Investigador
Elias Muñoz Merino
Categoría Investigador
L.D. PROF. EMERITO
Escuela UPM
E.T.S. DE INGENIEROS DE TELECOMUNICACION
Departamento:
INGENIERÍA ELECTRÓNICA
Area Conocimiento
TECNOLOGIA ELECTRONICA
Grupo de Investigación:
Sin grupo de investigación
Email (Directorio UPM)
elias.munoz
upm.es
Datos de Memorias relacionados
Proyectos de I+D+i y generación de recursos
46 Proyectos de I+D+i
1: (2007)
"Ayudas para apoyar las líneas de I+D en el programa de creación y consolidación de grupos de investigación de la Universidad Politécnica de Madrid. CAM, Referencia: CCG07-UPM/000-3220"
2: (2007)
"(Bio)sensores químicos avanzados para medida in-situ de la calidad de aguas basados en elementos específicos de reconocimiento y lectura (multifuncional integrada)"
3: (2007)
"Fabrication of AlGaN/GaN High Mobility Transistors grown on Si(111) and SiC/Si(111) Substrates" Acuerdo Hispano-Canadiense NRC-SEPOCYT
4: (2007)
"Key Organisation for Research on Integrated Circuits in GaN Technology (KORRIGAN)"Programmes and Activities Memorandum of Understanding (EUROPA MOU); Contract nº 04/102.052/032. CA Nº 2157 V7.(2005-2009).
5: (2007)
"Microscopio de barrido de capacidad para caracterización de nanoestructuras". Min. Educación y Ciencia, UNPM06-33-037 (2007)
6: (2007)
"New Generation of GaN-based sensor arrays for nano and picofluidic systems for fast and reliable biomedical testing (GANANO)" STREP NMP4-CT-2003-505641 (2003-2006).
7: (2007)
"Sistema de caracterización óptica avanzada multifuncional"
8: (2007)
"14th European Workshop on MBE, Sierra Nevada, Granada, ESPAÑA" Min. Educación y Ciencia, ACC-030000-2007-3 (2007)
9: (2007)
"14th European Workshop on MBE, Sierra Nevada, Granada, ESPAÑA" Min. Educación y Ciencia, ACC-030000-2007-3(2007)
10: (2007)
"14th European Workshop on MBE, Sierra Nevada, Granada, ESPAÑA" Ministerio de Educación y Ciencia.TEC2007-30322-E/ (2007)
11: (2007)
"14th European Workshop on MBE, Sierra Nevada, Granada, ESPAÑA" Ministerio de Educación y Ciencia.TEC2007-30322-E/ (2007)
12: (2007)
"14th European Workshop on MBE, Sierra Nevada, Granada, ESPAÑA.ISOM-UPM
13: (2008)
Ayudas financieras para la mejora de las infraestructuras científicas y tecnológicas singulares y para el acceso a las mismas
14: (2008)
Ayudas para apoyar las líneas de I+D en el programa de creación y consolidación de grupos de investigación de la UPM. (Resolución de 19 de junio de 2007)
15: (2008)
(Bio)sensores químicos avanzados para medida in-situ de la calidad de aguas basados en elementos específicos de reconocimiento y lectura multifuncional integrada
16: (2008)
Bio)sensores químicos avanzados para medida in-situ de la calidad de aguas basados en elementos específicos de reconocimiento y lectura multifuncional integrada
17: (2008)
Desarrollo de Transistores de GaN de potencia para amplificadores de radiofrecuencia
18: (2008)
Korrigan: Key Organisation for Research on Integrated Circuits in GaN Technology
19: (2008)
Nano y microdispositivos basados en ZnO para la detección de H2 y UV (THINKOXIDE)
20: (2008)
Programa de infraestructura y gestión de calidad de la red de laboratorios incluido en el Contrato-Programa de I+D entre la CAM y la UPM
21: (2008)
Programa de infraestructura y gestión de calidad de la red de laboratorios incluido en el Contrato-Programa de I+D entre la CAM y la UPM
22: (2008)
14th European Molecular Beam Epìtaxy" Acción complementaria ACC-030000-2007-3
23: (2008)
14th European Molecular Beam Epìtaxy. Acción complementaria TEC2007-30322-E/
24: (2009)
Asistencia técnica para el desarrollo de transistores GAN de potencia para amplificadores de radiofrecuencia nº 1053830118
25: (2009)
Ayudas a grupos de dispositivos semiconductores del ISOM
26: (2009)
CONTRACT N. 04/102.052/032
27: (2009)
DESARROLLO DE SENSORIZACION BASADA EN FOTODETECTORES DE GRAN PARA MOTORIZACION DE COMBUSTION PROFIT FIT-020100-2003-411
28: (2009)
DESARROLLO DE SENSORIZACION BASADA EN FOTODETECTORES DE GRAN PARAMONITORIZACION DE COMBUSTION PROFIT-02400-2004-58
29: (2009)
DESARROLLO DE TRANSISTORES GAN DE POTENCIA PARA AMPLIFICADORES DE RADIOFRECUENCIA EXPEDIENTE CDA N. 1053840076
30: (2009)
Desarrollo SENSOR UV ANTES ERA P030920167
31: (2009)
FABRICACION Y EVALUACION DE NUEVOS DISPOSITIVOS DE NITRURO DE GALIA PARA TRANSMISORES ..... PROFIT 020100-2003-380
32: (2009)
FABRICACION Y EVALUACION DE NUEVOS DISPOSITIVOS DE NITRURO DE GALIO PARA TRANSMISORES DE POTENCIA DE MICROONDAS
33: (2009)
FONDOS FEDER A DISPOSICION DE INVESTIGADORES
34: (2009)
New Generation of GaN-based sensor arrays for nano- and pico- fluidic systems for fasta and reliable biomedical testing (GaNano STREP 505641-1) GANANO
35: (2009)
OPTIMIZACION DE TECNICAS DE PROCESO DEL GAN
36: (2009)
TRANSISTORES DE POTENCIA HEMT DE GAN PARA MICROONDAS.
37: (2010)
SEMINARIO ALEMANIA-ESPAÑA JAPÓN SOBRE OPTOELECTRÓNICA.- WORKSHOP 2
38: (2011)
''Apoyo Beca financiada por OTT-UPM a Investigadora Luz Carime Gil Herrera. Temática: Funcionalización de semiconductores de banda prohibida ancha ''. Entidad: Dpto. Química Orgánica y Dpto. de Química Analítica, Facultad de CC Químicas-UCM. Código: Beca OTT-UPM, CEI. Proyecto E05 0920B 292 (2011). IP: Elías Muñoz/Guillermo Orellana.
39: (2011)
SEMINARIO ALEMANIA-ESPAÑA JAPÓN SOBRE OPTOELECTRÓNICA.- WORKSHOP 2
40: (2012)
Proyecto de colaboración dentro del Campus de Excelencia Internacional (CEI): Apoyo al contrato postdoctoral de la Dra. Valentina Dichiarante. Temática: Photonic chemical microsensors based on GaN LEDs for safety applications using smartphones''
41: (2012)
Proyecto de colaboración dentro del Campus de Excelencia Internacional (CEI): Apoyo al contrato postdoctoral de la Dra. Valentina Dichiarante. Temática: Photonic chemical microsensors based on GaN LEDs for safety applications using smartphones''
42: (2012)
Proyecto de Colaboracion dentro del Campus de Excelencia Internacional (CEI): Photonic chemical microsensors based on GaN LEDs for safety applications using smartphones
43: (2015)
: Componentes para fotónica de UV basada en óxidos
44: (2015)
: Dispositivos avanzados de Gap Ancho para el uso Racional de la Energía (RUE)
45: (2015)
BEAIO: Ingeniería de bandas con nuevas estructuras de semiconductores II-VI para optoelectrónica avanzada de VIS-IR
46: (2018)
OXPLIR: Plasmónica basada en óxidos para fotodetectores de IR
Formación de Investigadores y Movilidad
1 Estancias y sabáticos recogidos en programas oficiales
1: (2007)
Estancia del Doctorando Don Álvaro Navarro Tobar, en la University of Sheffield, Department of Electronic and Electrical Engineering, III/V Facility of the EPSRC National Center for III-V Technologies, Sheffield (Reino Unido), para el Diseño, fabricación y caracterización de diodos de avalancha de Nitruro de Galio, duración de la estancia 3 meses del 29/05/2007 al 31/08/2007.
9 Tesis Doctorales
1: (2007)
"Modelización y monitorización de la calidad de la combustión en función de la información luminosa existente en la llama en calderas domésticas"Nombre del Departamento: Ingeniería Electrónica de la ETSIT-UPM Doctorando: Javier Anduaga Salvatierra, Director/es de la Tesis: Dr. Elías Muñoz Merino Nota: Sobresaliente cum laude por unanimidad Lugar, Fecha y Hora de la Defensa: ETSIT-UPM, 12 de julio de 2007
2: (2007)
"Estudio de estructuras de baja dimensionalidad y avanzadas para detección de radiación visible y ultravioleta basadas en Nitruros del grupo III" Nombre del Departamento: Ingeniería Electrónica de la ETSIT-UPM Doctorando: Carlos Rivera Director/es de la Tesis: Elías Muñoz Merino y JL. Pau Vizcaíno, Nota: Sobresaliente cum laude por unanimidad Lugar, Fecha de la Defensa: ETSIT-UPM, 13 de julio de 2007.
3: (2007)
"Estudio de estructuras de baja dimensionalidad y avanzadas para detección de radiación visible y ultravioleta basadas en Nitruros del grupo III" Nombre del Departamento: Ingeniería Electrónica de la ETSIT-UPM Doctorando: Carlos Rivera Director/es de la Tesis: Elías Muñoz Merino y JL. Pau Vizcaíno Nota: Sobresaliente cum laude por unanimidad Lugar, Fecha y Hora de la Defensa: ETSIT-UPM, 13 de julio de 2007.
4: (2007)
Modelización y monitorización de la calidad de la combustión en función de la información luminosa existente en la llama en calderas domésticas
5: (2009)
FERNANDO GONZÁLEZ-POSADA FLORES "Aspectos estructurales, deformación y superficies en relación con la fiabilidad de transistores de alta movilidad electrónica basados en heteroestructuras de AlGaN/GaN"
6: (2009)
JUAN PEREIRO VITERBO "Diseño, crecimiento, caracterización y fabricación de detectores de luz ultravioleta y visible basados en pozos cuánticos de nitruros del grupo III"
7: (2010)
ANDRES REDONDO CUBERO. "Structural And Compositional Characterization Of Wide Bandgap Semiconductor Heterostructures By Ion Beam Analysis" 15/05/2010. Directores: Raúl Gago/Elías Muñoz. Sobresaliente cum laude
8: (2010)
MARIA FÁTIMA ROMERO ROJO. "Contribución al desarrollo tecnológico de transistores HEMT de AlGaN/GaN".12/07/2010. Director: Elías Muñoz. Sobresaliente cum laude.
9: (2011)
Contribución al desarrollo y caracterización de fotodetectores avanzados basados en nitruros del grupo III.
Difusión de Resultados de Investigación
85 Artículos en revistas
1: (2007)
A. NAVARRO, C. RIVERA, R. CUERDO, J.L. PAU, J. PEREIRO, E. MUÑOZ "Low frequency noise in InGaN/GaN MQW-based photodetector structures" Physica Status Solidi (a), 204, 262-266 (2007) ISSN: 0370-1972
2: (2007)
A. NAVARRO, C. RIVERA, R. CUERDO, J.L. PAU, J. PEREIRO, F. CALLE, E. MUÑOZ "Noise study in photodiodes based on InGaN/GaN MQW" IEEE Electron Devices, Conf Proc- 2007 Spanish Conference, 321-324, ISBN: 1-4244-0868-7 (2007) ISSN: 0741-3106
3: (2007)
A. NAVARRO, C. RIVERA, R. CUERDO, J.L. PAU, J. PEREIRO, F. CALLE, E. MUÑOZ "Noise study in photodiodes based on InGaN/GaN MQW" 2007 Spanish Conference on Electron Devices IEEE Proceedings 321-324, ISBN: 1-4244-0868-7 (2007)
4: (2007)
C. RIVERA, E. MUÑOZ, O. BRANDT, H.T. GRAHN "Detection of the optical polarization angle with bandplass characteristics based on M-plane GaN photodetectors" Applied Physics Letters 91, 203514-203516 (2007) ISSN: 0003-6951
5: (2007)
C. RIVERA, E. MUÑOZ, O. GRANDT, H.T. GRAHN "Detection of the optical polarization angle with bandplass characteristics based on M-plane GaN photodetectors" Applied Physics Letters 91, 203514-203516 (2007) ISSN: 0003-6951
6: (2007)
C. RIVERA, P. MISRA, J. L. PAU, E. MUÑOZ, O. BRANDT, H. T. GRAHN, K. H. PLOOG "Electrical and optical characterization of M-plane GaN films grown on LiAlO2 substrates" Physica Status Solidi (c), 4, 2548-2551 (2007) ISSN: 0370-1972
7: (2007)
C. RIVERA, P. MISRA, J. L. PAU, E. MUÑOZ, O. BRANDT, H. T. GRAHN, K. H.PLOOG. "Intrinsic photoluminescence of M-plane GaN films on LiAlO2 substrates" Journal of Applied Physics, 101, 053527-053533 (2007). ISSN: 0021-8979
8: (2007)
C. RIVERA, P. MISRA, J.L. PAU, E. MUÑOZ, O. BRANDT, H.T. GRAHN, K.H. PLOOG "M-plane GaN-based dichroic photodetectors" Physica Status Solidi (c), 4, 86-89 (2007) ISSN: 0741-3106
9: (2007)
C. RIVERA, P. MISRA, J.L. PAU, E. MUÑOZ, O. BRANDT, H.T. GRAHN, K.H. PLOOG "Strained M-plane GaN for polarization-sensitive applications" IEEE Electron Devices, Conf Proc- 2007 Spanish Conference, 250-253 (2007) ISSN: 0741-3106
10: (2007)
C. RIVERA, U. JAHN, T. FLISSIKOWSKI, J.L. PAU, E. MUÑOZ, H.T. GRAHN. "Strain-confinement mechanism in mesoscopic quantum disks based on piezoelectric materials"Physical Review B (seleccionado por el Virtual Journal of Nanoscale Science & Technology), 75, 0453163-0453173 (2007) ISSN: 1098-0121
11: (2007)
E. MUÑOZ "(Al,In,Ga,Al)N- based photodetectors. Some materials issues" Physica Status Solidi (b), 244, 2683-2696 (2007) ISSN: 0370-1972
12: (2007)
F. GONZÁLEZ-POSADA, J.A. BARDWELL, S. MOISA, S. HAFFOUZ AND H. TANG, A.F. BRAÑA E. MUÑOZ "Surface cleaning and preparation in AlGaN/GaN-based HEMT processing as assessed by X-ray photoelectron spectroscopy" Applied Surface Science, 53, 14, 6185-6190 (2007) ISSN: 0169-4332
13: (2007)
F. OMNES, E. MONROY, E. MUÑOZ, J.L. REVERCHON "Wide bandgap UV photodetectos: a short review of devices and applications" Proceedings Spie The International society for optical engineering, 6473, 64730E (2007) ISSN: 0277-786x
14: (2007)
J. MIGUEL-SÁNCHEZ, A. GUZMÁN, U. JAHN, A. TRAMPERT, J. M. ULLOA, E. MUÑOZ, A. HIERRO "Role of ionized nitrogen species in the optical and structural properties of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy"Journal of Applied Physics, 101,1035261-10352616 (2007) ISSN: 0021-8979
15: (2007)
J. PEREIRO, C. RIVERA, J.L. PAU, A. NAVARRO, S. FERNANDEZ - GARRIDO, S. GRZANKA, M. LESZCZYNSKI, E. MUÑOZ "Design Of Ingan Based Photodetectors By Internal Field Engineering".2007 Spanish Conference on Electron Devices IEEE Proceedings 296-299, ISBN: 1-4244-0868-7 (2007)
16: (2007)
J. PEREIRO, C. RIVERA, J.L. PAU, A. NAVARRO, S. FERNÁNDEZ-GARRIDO, S. GRZANKA, M. LESZCZYNSKI, E. MUÑOZ "Design of InGaN based photodetectors by internal field engineering" IEEE Electron Devices, Conf Proc- 2007 Spanish Conference, 296-299 (2007) ISSN: 0741-3106
17: (2007)
J.L. PAU, R. MCCLINTOCK, K. MINDER, C. BAYRAM, P.KUNG, M.RAZEGUI, E.MUÑOZ, D.SILVERSMITH "Geiger-mode operation of back-illuminated GaN avalanche photodiodes" Applied Physics Letters, 91, 041104-041107 (2007) ISSN: 0003-6951
18: (2007)
R. CUERDO, J. PEDRÓS, A. NAVARRO, A.F. BRAÑA, J.L. PAU, E. MUÑOZ, F. CALLE "High temperature assessment of nitride-based devices" Journal of Materials Science: Materials in Electronics, (published online) (2007) ISSN: 0957-4522
19: (2007)
S. GHOSH, C. RIVERA, J. L. PAU, E. MUÑOZ, O. BRANDT, H. T. GRAHN "Very narrow-band ultraviolet photodetection based on strained M-plane GaN films" Applied Physics Letters, 90, 091110-1,-3(2007) ISSN: 0003-6951
20: (2008)
Aluminium incorporation in AlGaN/GaN heterostructures: a comparative study by ion beam analysis and X-ray diffraction
21: (2008)
Band bending at In-rich InGaN surfaces
22: (2008)
Bowing of the band gap pressure coefficients in InGaN alloys
23: (2008)
Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy
24: (2008)
Effects of N2 plasma pre-treatment on the SiN Passivation of AlGaN/GaN HEMT
25: (2008)
Growth of Nitrogen-Doped MgxZn1−xO for Use in Visible Rejection Photodetectors
26: (2008)
High temperature assessment of nitride-based devices
27: (2008)
High temperature behavior of GaN HEMT devices on Si(111) and sapphire substrates
28: (2008)
Influence of Surface Hydroxylation on 3-Aminopropyltriethoxysilane Growth Mode during Chemical Functionalization of GaN Surfaces: An Angle-Resolved X-ray Photoelectron Spectroscopy Study
29: (2008)
Local vibration modes and nitrogen incorporation in AlGaAs: N layers
30: (2008)
Narrow-band photodetection based on M-plane GaN films
31: (2008)
Observation of giant photocurrent gain in highly doped (In,Ga)N/GaN MQW-based photodiodes
32: (2008)
Photoluminiscence enhancement in quaternay III-nitrides alloys grown by molecular beam epitaxy with increasing Al content
33: (2008)
Resonant Raman study of local vibrational modes in AlGaAsN layers
34: (2008)
Resonant Raman-active localized vibrational modes in AlyGa{1-y}NxAs{1-x} alloys: Experiment and firstprinciples calculations
35: (2008)
Study of SiNx:Hy passivant layers for AlGaN/GaN high electron mobility transistors
36: (2008)
The effect of rapid thermal annealing on the photoluminescence of InAsN/InGaAs dot-in-a-well structures
37: (2008)
Vertical composition fluctuations in (Ga,In)(N,As) quantum wells grown on vicinal (1 1 1)B GaAs
38: (2009)
A. NAVARRO, C. RIVERA, J. PEREIRO, E. MUÑOZ, B. IMER, S.P. DENBAARS, J.S. SPECK. "High responsivity A-plane GaN-based metal-semiconductor-metal photodetectors for polarization-sensitive applications" Applied Physics Letters, 94, 213512-1, 213512-3 (2009)
39: (2009)
A. REDONDO-CUBERO, K. LORENZ, N. FRANCO, S. FERNÁNDEZ-GARRIDO, R. GAGO, P.J.M. SMULDERS, E. MUÑOZ, E. CALLEJA, E. ALVES "Influence of steering effects on strain detection in AlGaInN/GaN heterostructures by ion channelling" J. Phys. D: Appl. Phys., 42 (6), 065420-1/8 (2009)
40: (2009)
A.HIERRO, G. TABARES, J. M. ULLOA, E. MUÑOZ, A. NAKAMURA, T. HAYASHI, J. TEMMYO "Carrier compensation by deep levels in Zn1-xMgxO/sapphire" Applied Physics Letters, 94, 232101-1, 232101-3 (2009)
41: (2009)
A.REDONDO-CUBERO, K LORENZ, R GAGO, N FRANCO, S. FERNÁNDEZ-GARRIDO, P.J.M. SMULDERS, E. MUÑOZ, E. CALLEJA, I.M. WATSON, E. ALVES "Breakdown of anamalous channeeling with ion energy for accurate strain determination in GaN-based heterostructures" Applied Physics Letters, 95, 051921-3 (2009)
42: (2009)
C. RIVERA, E. MUÑOZ "The role of electric field-induced strain in the degradation mechanism of AlGaN/GaN high-electron-mobility transistors" Applied Physics Letters 94, 053501 (2009).
43: (2009)
F. GONZÁLEZ-POSADA FLORES, A. REDONDO-CUBERO, R. GAGO, A. BENGOECHEA, A. JIMENES, D. GRAMBOLE, A.F. BRAÑA, E.MUÑOZ "High-resolution hydrogen profiling in AlGaN/GaN heterostructures grown by different epitaxial methods" J. Phys. D: Appl. Phys. 42, 055406 (5pp) (2009)
44: (2009)
F. GONZÁLEZ-POSADA FLORES, C. RIVERA, E.MUÑOZ. "The effects of processing of high-electron-mobility transistors on the strain state and the electrical properties of AlGaN/GaN structures" Applied Physics Letters 95, 203504 (2009)
45: (2009)
J. PEREIRO, C. RIVERA, A. NAVARRO, E. MUÑOZ, R. CZERNECKI, S. GRZANKA, M. LESZCZYNSKI "Optimization of InGaN/GaN MQW photodetector structures for high responsivity performance" Journal of Quantum Electronics, 45, 617-622 (2009)
46: (2009)
R. CUERDO, E. SILLERO, M. F. ROMERO, M. J. UREN, M.-A. DI FORTE POISSON, E. MUÑOZ, F. CALLE "High Temperature Microwave Performance of Submicron AlGaN/GaN HEMTs on SiC" IEEE Electron Device Letters, 30, 808-810 (2009)
47: (2009)
V. TASCO, A. CAMPA, I. TARANTINI, A. PASSASEO, F. GONZÁLEZ-POSADA, A. REDONDO-CUBERO, K. LORENZ, N. FRANCO, E. MUÑOZ "Investigation of different mechanisms of GaN growth induced on AlN and GaN nucleation layer" Journal of Applied Physics, 105, 063510 (2009)
48: (2010)
A. NAKAMURA,T. HAYASHI , A.HIERRO, G.TABARES, J.M.ULLOA, E.MUÑOZ, J. TEMMYO, "Schottky barrier contacts formed on polar and nonpolar MgxZn1-xO films grown by remote plasma enhanced MOCVD" Phys. Status Solidi B 247, 1472-1475, 2010.
49: (2010)
A. REDONDO-CUBERO, K. LORENZ, R. GAGO, N. FRANCO, M.-A. DI FORTE POISSON, E. ALVES, E. MUÑOZ ''Depth-resolved analysis of spontaneous phase separation in the growth of lattice-matched AlInN'' Journal Physics D: Appl. Phys. 43, 055406 (2010).
50: (2010)
C. RIVERA, J. PEREIRO, A. NAVARRO, E. MUÑOZ , O. BRANDT, H.T. GRAHN, ''Advances in Group-III-Nitride Photodetectors'' The Open Electrical & Electronic Engineering Journal, 4, 1-9 (2010)
51: (2010)
G. MENEGHESSO, F. ROSSI, G. SALVIATI, M. J. UREN, E. MUÑOZ, E. ZANONI "Correlation between kink and cathodoluminescence spectra in AlGaN/GaN high electron mobility transistors" Appl. Phys. Lett. 96, 263512 ; DOI:10.1063/1.3459968 (3 pages), (2010)
52: (2010)
G. TABARES, A. HIERRO, J.M. ULLOA, A. GUZMAN, E. MUÑOZ, A. NAKAMURA, T. HAYASHI, J. TEMMYO "High responsivity and internal gain mechanisms in Au-ZnMgO Schottky photodiodes" Applied Physics Letters 96, 101112/1-101112/3, 2010.
53: (2010)
J. LÓPEZ-GEJO, A. ARRANZ, A. NAVARRO, C. PALACIO, E. MUÑOZ, G. ORELLANA ''Microsensors Based on GaN Semiconductors Covalently Functionalized with Luminescent Ru(II) Complexes'' Journal of the American Chemical Society, 132(6), 1746-7 (2010)
54: (2010)
J. PEREIRO, A. REDONDO-CUBERO, S. FERNANDEZ-GARRIDO, C. RIVERA, A. NAVARRO, E. MUNOZ, E. CALLEJA, R. GAGO, "Mg doping of InGaN layers grown by PA-MBE for the fabrication of Schottky barrier photodiodes" Journal of Physics D: Applied Physics, 43, 33, 335101 (2010)
55: (2010)
M.F. ROMERO, M.M.SANZ, I. TANARRO, A JIMÉNEZ, E. MUÑOZ ''Plasma diagnostic and device properties of AlGaN/GaN HEMT passivated with SiN deposited by plasma enhanced chemical vapour deposition'' Journal. D: Appl. Phys. 43, 495202 (2010)
56: (2010)
Microsensors Based on GaN Semiconductors Covalently Functionalized with Luminescent Ru(II) Complexes
57: (2011)
Direct Grafting of Long-Lived Luminescent Indicator Dyes to GaN Light-Emitting Diodes for Chemical Microsensor Development
58: (2011)
Green Electroluminescence From ZnCdO Multiple Quantum-Well Light-Emitting Diodes Grown by Remote-Plasma-Enhanced Metal-Organic Chemical Vapor Deposition
59: (2011)
InN/InGaN multiple quantum wells emitting at 1.5 mu m grown by molecular beam epitaxy
60: (2011)
Single phase a-plane MgZnO epilayers for UV optoelectronics: substitutional
61: (2011)
Sublattice-specific ordering of ZnO layers during the heteroepitaxial growth at different temperatures
62: (2012)
Impact of N-2 Plasma Power Discharge on AlGaN/GaN HEMT Performance
63: (2012)
Impact of N2 plasma power discharge on AlGaN/GaN HEMT performance
64: (2012)
Self-assembled MgxZn1-xO quantum dots (0¡Ü x ¡Ü1) on different substrates using spray pyrolysis methodology
65: (2012)
Single phase alpha-plane MgZnO epilayers for UV optoelectronics: substitutional behaviour of Mg at large contents
66: (2013)
Effect of rapid thermal annealing on the composition of Au/Ti/Al/Ti ohmic contacts for GaN-based microdevices
67: (2013)
Effect of rapid thermal annealing on the composition of Au/Ti/Al/Ti ohmic contacts for GaN-based microdevices
68: (2013)
Electrical characterization of Schottky contacts to n-MgZnO films
69: (2013)
Electrical characterization of Schottky contacts to n-MgZnO films
70: (2013)
Optical properties and microstructure of 2.02-3.30 eV ZnCdO nanowires: Effect of thermal annealing
71: (2013)
Optical properties and microstructure of 2.02-3.30 eV ZnCdO nanowires: Effect of thermal annealing
72: (2013)
Self-assembled MgxZn1-xO quantum dots (0 <= x <= 1) on different substrates using spray pyrolysis methodology
73: (2013)
Self-assembled MgxZn1-xO quantum dots (0 <= x <= 1) on different substrates using spray pyrolysis methodology
74: (2014)
Acceptor levels in ZnMgO:N probed by deep level optical spectroscopy
75: (2014)
Influence of lateral and in- depth metal segregation on the patterning of ohmic contacts for GaN-based devices
76: (2014)
VIS-UV ZnCdO/ZnO multiple quantum well nanowires and the quantification of Cd diffusion
77: (2015)
Light polarization sensitive photodetectors with m- and r-plane homoepitaxial ZnO/ZnMgO quantum wells
78: (2015)
Optical properties of ZnMgO films grown by spray pyrolysis and their application to UV photodetection
79: (2015)
ZnO/ZnMgO multiple quantum well light polarization sensitive photodetectors
80: (2016)
MOCVD growth of CdO very thin films: Problems and ways of solution
81: (2016)
Wurtzite Zn1-y(MgxCd1-x)(y)O quaternary systems for photodiodes in visible spectral range
82: (2016)
ZnMgO-based UV photodiodes: a comparison of films grown by spray pyrolysis and MBE
83: (2017)
Deep-level spectroscopy in metal-insulator-semiconductor structures
84: (2019)
Controllable and Highly Propagative Hybrid Surface Plasmon-Phonon Polariton in a CdZnO-Based Two-Interface System
85: (2019)
III-Nitride-based junction devices round contacts: effect of semiconductor film geometry and characteristics on the capacitance and conductance measurements
4 Capítulos de libros
1: (2007)
J. PEREIRO, J.L. PAU, C. RIVERA, A. NAVARRO, E. MUÑOZ, R. CZERNECKI, G. TARGOWSKI, P. PRYSTAWKO, M. KRYSKO, M. LESZCZYNSKI, T. SUSKI "InGaN growth applied to the fabrication of photodetector devices" in"Nitrides and dilute nitrides: Growth, physics and devices" 2007 Editorial (si libro): Research Signpost, ISBN: 81-7895-250-5 Lugar de publicación: India
2: (2007)
S. FERNÁNDEZ-GARRIDO, E. CALLEJA, A. REDONDO-CUBERO, R. GAGO, J. PEREIRO, F. GONZÁLEZ-POSADA, E. MUÑOZ. "Propeties and growth by plasma assisted molecular beam epitaxy of quaternary III-Nitrides". In Nitrides and dilute nitrides: Growth, physics and devices, J. Miguel-Sánchez, editor, Research Signpost, Singapore (2007)
3: (2008)
Impact of Nitrogen Ion Density on the Optical and Structural Properties of MBE Growh GaInAs/GaAs (100) and (111)B Quantum Wells
4: (2008)
InGaN growth applied to the fabrication of photodetector devices
16 Conferencias invitadas en congresos
1: (2007)
E. Muñoz "UV detectors based on GaN and ZnO", Inter-Academia 2007. University of Shizuoka, Hamamatsu (Japón), 27 de septiembre de 2007.
2: (2008)
Multicolor absorption using Quantum Well Infrared Photodetectors based on dilute nitrides
3: (2009)
E.MUÑOZ et al. "Recent Advances on AlGaN photodetectors" University of Shizuoka, Research Inst. of Electronics Tokyo (Japan), 2009
4: (2009)
E.MUÑOZ ET AL "Materials and Strain Issues in AlGaN/GaN HEMT Degradation" 2009 International Conference on Solid State Devices and Materials (ISSDM 2009). Tokyo (Japan), 2009
5: (2009)
R CUERDO, E, MUÑOZ,F. CALLE "Performance of AlGaN-GaN HEMTs at high temperature" ESA-MoD Workshop on GaN Microwave Component Technologies. Ulm (Germany), 2009
6: (2011)
In,Ga,Al)N Photodetectors and applicantions in biophotonics
7: (2011)
(In,Ga,Al)N photodetectors and applications in biophotonics
8: (2011)
Time-Reversal-Based Multipath Mitigation Technique for Entropy Minimization of SAR Images
9: (2012)
Integrated luminescent chemical microsensors based on GaN LEDs for security applications using smartphones
10: (2012)
Ion beams as a tool for advanced structural characterization in ZnO-based materials
11: (2012)
Zn(Mg,Cd)O epilayers and nanostructures for optoelectronics
12: (2013)
AlGaInN/GaN HEMT. Some Device and Materials Issue
13: (2013)
UV-VIS Optoelectronics with Oxides
14: (2015)
El premio Novel e Física 2014 por invención del LED azul. Algunas consideraciones, Hitos Clave y Beneficios
15: (2016)
ZnMgO-based UV photodiodes: a comparison of films grown by spray pyrolysis and MBE
16: (2017)
Using MIS structures to probe bulk traps: the case of ZnO
13 Cursos, seminarios y tutoriales
1: (2008)
Dr. Atsushi Nakamura, Assistant professor, Research Institute of Electronics (RIE), Shizuoka University, 3-5-1 Johoku, Hamamatsu, Shizuoka, Japan Research activities of Oxide semiconductors at the Research Institute of Electronics
2: (2008)
Mario J. Martin, Instituto Nacional de Tecnología Aeroespacial Esteban Terradas (INTA) en el departamento de Dinámica de Fluidos: Cálculos de Alto Rendimiento con Tarjetas Gráficas
3: (2008)
Prof. Yasushi Nanishi, Department of Photonics, School of Science and Engineering, Ritsumeikan University: Research and Development of AlGaN/GaN High Power and High Frequency Electronic Devices under Support of Japanese Government
4: (2010)
Professor LORENZO FARAONE "Optical MEMS Technologies For Multi-Spectral Infrared Sensors and Array" AA, FTSE, SMIEEE,IEEE-EDS -20/09/2010- -Microelectronics Research Group, The University of Western Australia- -(Australia)
5: (2011)
Jornada científica sobre FOTÓNICA EMERGENTE BASADA EN ÓXIDOS AVANZADOS
6: (2011)
Jornada científica sobre FOTÓNICA EMERGENTE BASADA EN ÓXIDOS AVANZADOS
7: (2011)
Primeras Jornadas Científicas CAMPUS EXCELENCIA INTERNACIONAL MONCLOA Cluster materiales para el futuro
8: (2012)
Dr. Andres Castellanos-Gómez. Kavli Institute of NanoScience, TU Delft, Netherlands
9: (2012)
Prof. Mircea Dragoman, National Institute of Research and Development in Microtechnology (IMT) in Bucharest, Romania. "Carbon Nanoelectronics for RF Applications"
10: (2012)
Prof. Pablo Esquinazi. Head of the Division of Superconductivity and Magnetism, and Dean of Studies for Physics and Meteorology, University of Leipzig, Germany nductivity and Magnetism, University of Leipzig, Germany. " Is Graphite the best Graphene? Searching for its intrinsic transport properties"
11: (2014)
ZnO-based and graphene material systems for green devices
12: (2016)
GaN. The journey from two special atoms to center stage at the communication revolution
13: (2017)
Seminario: Internet de las Cosas: una mirada desde la Ingeniería Electrónica
2 Otras Publicaciones
1: (2011)
Processing and adsorption control in ZnO single nanowire photodetectors
2: (2016)
PREMIOS DE FÍSICA 2016: Real Sociedad Española de Física junto con la FUNDACION BBVA
91 Ponencia en Congresos
1: (2007)
A. Nakamura, T. Hayashi, S. Gangil, J. Temmyo, A. Navarro, J. Pereiro, E. Muñoz "Nitrogen-Doped Mgxzn1-Xo Growth Towards Visible Rejection Photodetetors" 13th International Conference on II-VI Compounds Jeju (Corea) 10 al 14 de septiembre de 2007
2: (2007)
A. Redondo-Cubero, J.A. Sánchez-García, R. Gago, L. Vázquez, J. Muñoz-García, M. Castro, R. Cuerno "Surface nanodot patterning of amorphous silicon films by low-energy ion beam sputtering" Nanopatterning via ions, photon beam and epitaxy Sestri Levante (Italia) 20 al 23 de septiembre de 2007
3: (2007)
A. Redondo-Cubero, M. F. Romero, R. Gago, A. Muñoz-Martín, A.F. Braña, A. Jiménez, E. Muñoz "Study of a-SiN:H passivant layers for GaN-based high electron mobility transistors",European Materials Research Society Meeting (E-MRS) 2007 Estrasburgo (Francia) 28 de mayo al 1 Junio de 2007
4: (2007)
Á. Guzmán, E. Luna, J. Hernando, E. Muñoz "Quantum Well Infrared Photodetectors (QWIP), Basics and current activities at UPM University" 19th NATO/RTO Sensors and Electronics Technology Panel Business Meeting Toledo (España) 9 al 9 de octubre de 2007.
5: (2007)
A. Navarro, C. Rivera, R. Cuerdo, J.L. Pau, J. Pereiro, F. Calle, E. Muñoz "Noise study in photodiodes based on InGaN/GaN" MQW 6th Spanish Conference on Electronic Devices, CDE-07 El Escorial (Madrid, España) 31 de enero al 2 de febrero de 2007
6: (2007)
A. NAVARRO, C. RIVERA, R. CUERDO, J.L. PAU, J. PEREIRO, F. CALLE, E. MUÑOZ "Noise study in photodiodes based on InGaN/GaN MQW". 2007 Spanish Conference on Electron Devices IEEE Proceedings 321-324, ISBN: 1-4244-0868-7 (2007) ISSN: 0741-3106 31 de enero al 2 de febrero 2007 El Escorial, Madrid (España)
7: (2007)
A. Redondo-Cubero, R. Gago, F. González-Posada, S. Fernández-Garrido, A. Muñoz-Martín, A. F. Braña, U. Kreissig, D. Grambole, E. Muñoz "Ion Beam Analysis Of Ternary And Quaternary AlInGaNn/GaN Heterostructures For High-Power Electronic Devices". European Materials Research Society Meeting (E-MRS) 2007. Estrasburgo (Francia) 28 de mayo al 1 Junio de 2007
8: (2007)
A. Redondo-Cubero, R. Gago, F. González-Posada, S. Fernández-Garrido, A. Muñoz-Martín, A. F. Braña, U. Kreissig, D. Grambole, E. Muñoz "Ion Beam Analysis Of Ternary And Quaternary Alingan/Gan Heterostructures For High-Power Electronic Devices"European Materials Research Society Meeting (E-MRS) 2007 Estrasburgo (Francia) 28 de mayo al 1 Junio de 2007
9: (2007)
C. Rivera, P. Misra, J.L. Pau, E. Muñoz, O. Brandt, H.T. Grahn, K.H. Ploog "Strained M-Plane Gan For Polarization-Sensitive Applications" 6th Spanish Conference on Electronic Devices CDE-07 El Escorial, Madrid (España) 31 de enero al 2 de febrero de 2007
10: (2007)
F. González-Posada, A. F. Braña, D. L. Romero, M. F. Romero, E. Muñoz, C. Palacio, A. Jiménez, J. A. Bardwell. "Effects Of Surface Cleaning And Treatments In 2deg Characteristics Of Gan Hemt Structures" 31st Workshop on compound Semiconductor devices and Integrated circuits WOCSDICE-2007Venecia (Italia) 20 al 23 de mayo de 2007
11: (2007)
F.Omnes, E. Monroy, E. Muñoz, J.L.Reverchon,"Wide bandgap UV photodetectos: a short review of devices and applications"Proceedings Spie The International society for optical engineering, 6473, 64730E, 2007, ISSN: 0277-786X San José, California (USA) 15 de enero 2007 al 18 de enero de 2007
12: (2007)
J. Miguel-Sánchez, M. Hopkinson, Á. Guzmán, R. Gargallo-Caballero, E. Muñoz. "(In)Gaas(N) On Gaas (100) And (111)B Grown In A Low Pressure N2 Environment" 14th European Molecular Beam Epitaxy Workshop 2007 Sierra Nevada, Granada (ESPAÑA) 5 al 7 de marzo de 2007
13: (2007)
J. Miguel-Sánchez, M. Montes, A. Hierro, R. Gargallo-Caballero, A. Guzmán, E. Muñoz, S. Lazic, E. Gallardo, J. M. Calleja "Growth And Characterization Of Algaas(N) On Gaas" 14th European Molecular Beam Epitaxy Workshop 2007 Sierra Nevada, Granada (ESPAÑA) 5 al 7 de marzo de 2007
14: (2007)
J. Miguel-Sánchez, M. Montes, A. Hierro, R. Gargallo-Caballero, A. Guzmán, E. Muñoz, S. Lazic, E. Gallardo, J. M. Calleja "Growth And Characterization Of Algaas(N) On Gaas" 14th European Molecular Beam Epitaxy Workshop 2007 Sierra Nevada, Granada (ESPAÑA) 5 al 7 de marzo de 2007
15: (2007)
J. Pereiro, C. Rivera, J.L. Pau, A. Navarro, S. Fernández-Garrido, S. Grzanka, M. Leszczynski, E. Muñoz "Design, by internal field engineering, of InGaN based photodetectors" 6th Spanish Conference on Electronic Devices CDE-07 El Escorial (Madrid, España) 31 de enero al 2 de febrero de 2007
16: (2007)
J. Pereiro, C. Rivera, J.L. Pau, A. Navarro, S. Fernandez-Garrido, S. Grzanka, M. Leszczynski, E. Muñoz "Growth And Characterization Of (In,Ga)N Based Photodetectors Designed By Internal Field Engineering" 14th European Molecular Beam Epitaxy Workshop 2007 Sierra Nevada, Granada (España) 5 al 7 de marzo de 2007
17: (2007)
J. Pereiro, C. Rivera, J.L. Pau, A. Navarro, S. Fernández-Garrido, S. Grzanka, M. Leszczynski, E. Muñoz "Design, by internal field engineering, of InGaN based photodetectors" 6th Spanish Conference on Electronic Devices CDE-07 El Escorial (Madrid, España) 31 de enero al 2 de febrero de 2007
18: (2007)
J. Pereiro, C. Rivera, J.L. Pau, A. Navarro, S. Fernandez-Garrido, S. Grzanka, M. Leszczynski, E. Muñoz "Design Of Ingan Based Photodetectors By Internal Field Engineering" 6th Spanish Conference on Electronic Devices CDE-07 El Escorial, Madrid (España) 31 de enero al 2 de febrero de 2007
19: (2007)
R. Cuerdo, F. Calle, A. F. Braña, E. Muñoz, Y. Cordier, M. Azize, N. Baron, S. Chenot "High temperature DC performance of nitride HEMTs with different gate length" 16th European Workshop on Heterostructures Technology Frejus (Francia) 2 al 5 de septiembre de 2007
20: (2007)
R. Cuerdo, F. Calle, A. F. Braña, Y. Cordier, M. Azize, N. Baron, S. Chenot, E. Muñoz "High temperature behaviour of AlGaN/GaN HEMTs on Si(111) and sapphire substrates" 7th International Conference on Nitride Semiconductors (ICNS07) Las Vegas (USA) 16 al 21 de septiembre de 2007
21: (2007)
R. Gargallo-Caballero, A.Guzmán, J. Miguel-Sánchez, A. Hierro, E.Muñoz. "Analysis of gain spectra and Fermi level pinning of GaInNAs/GaAs quantum well lasers with 0 to 3.3% N content" European Materials Research Society Meeting (E-MRS) 2007 Estrasburgo (Francia) 28 de mayo al 1 Junio de 2007
22: (2007)
R. Gargallo-Caballero, A.Guzmán, J. Miguel-Sánchez, A. Hierro, E.Muñoz "Analysis Of Gain Spectra And Fermi Level Pinning Of Gainnas/Gaas Quantum Well Lasers With 0 To 3.3% N Content" European Materials Research Society Meeting (E-MRS) 2007 Estrasburgo (Francia) 28 de mayo al 1 Junio de 2007
23: (2007)
R. Gargallo-Caballero, J. Miguel-Sánchez, Á. Guzmán, A. Hierro, E. Muñoz. "Structural and optical study of InAsN quantum dots grown on GaAs(100) and buried with different materials" 14th European Molecular Beam Epitaxy Workshop 2007 Sierra Nevada, Granada (ESPAÑA) 5 al 7 de marzo de 2007
24: (2007)
R. Gargallo-Caballero, M. Sanz, Á. Guzmán, E. Calleja, E. Muñoz "Quantum Dot Infrared Photodetector for mid-infrared detection at high temperatures".6th Spanish Conference on Electronic Devices CDE-07 El Escorial, Madrid (España) 31 de enero al 2 de febrero de 2007
25: (2007)
R. Gargallo-Caballero, M. Sanz, Á. Guzmán, E. Calleja, E. Muñoz "Quantum Dot Infrared Photodetector for mid-infrared detection at high temperatures"6th Spanish Conference on Electronic Devices CDE-07 El Escorial, Madrid (España) 31 de enero al 2 de febrero de 2007
26: (2007)
R. Gargallo-Caballero, M.Sanz, Á.Guzmán, E.Calleja, E.Muñoz "High Temperature Multiquantum Dot Infrared Photodetectors Using Inas Self-Assembled Quantum Dots" 6th Spanish Conference on Electronic Devices CDE-07 El Escorial, Madrid (España) 31 de enero al 2 de febrero de 2007
27: (2007)
S. Barbet, R. Aubry, D. Deresmes, M-A. Poisson, T. Mélin, D. Théron, F. Romero, E. Muñoz, A. Jiménez "Kelvin force Microscopy on Gan Material and Devices" 16th European Workshop on Heterostructure Technology "HETECH 2007" Frejus (Francia) 2 al 5 de septiembre de 2007
28: (2007)
S. Ghosh, C. Rivera, J. L. Pau, E. Muñoz, O. Brandt, H. T. Grahn "Narrow-Band Photodetection Based On M-Plane Gan". 7th International Conference on Nitride Semiconductors (ICNS07) Las Vegas (Nevada, USA) 16 al 21 de septiembre de 2007
29: (2007)
S. Ghosh, C. Rivera, J. L. Pau, E. Muñoz, O. Brandt, H. T. Grahn "Narrow-Band Photodetection Based On M-Plane Gan" 7th International Conference on Nitride Semiconductors (ICNS07) Las Vegas (Nevada, USA) 16 al 21 de septiembre de 2007
30: (2007)
S. Lazic, E. Gallardo, J.M. Calleja, J. Miguel-Sánchez, M. Montes, A. Hierro, R. Gargallo-Caballero, A. Guzmán, E. Muñoz, A.M Teweldeberhan, S.Fahy "Resonant Raman study of local vibrational modes in AlxGa1-xAs1-yNy layers" 13th International Conference on Modulated Semiconductor Structures (MSS-13) Génova (Italia) 15 al 20 de julio de 2007
31: (2007)
S. Lazić, E. Gallardo, J.M. Calleja, J. Miguel-Sánchez, M. Montes, A. Hierro, R. Gargallo-Caballero, A. Guzmán, E. Muñoz, A.M Teweldeberhan, S.Fahy "Resonant Raman study of local vibrational modes in AlxGa1-xAs1-yNy layers" 13th International Conference on Modulated Semiconductor Structures (MSS-13) Génova (Italia) 15 al 20 de julio de 2007
32: (2008)
A-plane GaN polarization-sensitive photodetectors International Workshop on Nitride Semiconductors (IWN) 2008 Montreux (Suiza), 2008
33: (2008)
DC and RF Performance of AlGaN/GaN HEMTs on SiC at High Temperatures Int. Workshop on Nitrides Montreaux (Suiza), 2008.
34: (2008)
Detectores de UV y VIS basados en AlGaN Universidad Nacional de La Plata y Centro de Investigaciones Opticas (CIOP) La Plata (Argentina), 2008
35: (2008)
Influence of Steering Effects on Ion Channeling Determination of Strain in GaN-based Heterostructures INFN ELOISATRON PROJECT The 51st Workshop, Channeling 2008 Erice (Trapani - Sicilia), Italia, 2008
36: (2008)
Optimization of (Al,Ga,In)N-based MQW photodiodes for high responsivity performance in the visible and UV regions International Workshop on Nitride Semiconductors (IWN 2008) Montreux (Suiza), 2008
37: (2008)
Optoelectrónica basada en semiconductores (Al,Ga,In)N Universidad de Chile, Fac. de Ingenieria Santiago de Chile (Chile), 2008
38: (2008)
Photoemission and Optical Studies of Electron Accumulation at InN and In-rich InGaN Surfaces
39: (2008)
Plasma and surface diagnostics of silicon nitride thin film coatings generated by SiH4+NH3 RF discharges
40: (2008)
The influence of Ga composition of GaInAsN QDs on N incorporation.
41: (2008)
The Role of Strain in the Off-state Degradation Mechanism of AlGaN/GaN High Electron Mobility Transistors International Workshop on Nitride Semiconductors (IWN) 2008 Montreux (Suiza), 2008
42: (2009)
A. HIERRO, G. TABARES, J.M. ULLOA, E. MUÑOZ, A. NAKAMURA, T. HAYASHI, J. TEMMYO "Carrier compensation by deep levels in a-plane MgxZn1-xO Schottky photodiodes grown by RPE-MOCVD" Spring European Materials Research Society Conference 2009 Strasburg (France), 2009
43: (2009)
A. HIERRO, G. TABARES, J.M. ULLOA, E. MUÑOZ, A. NAKAMURA, T. HAYASHI, J. TEMMYO "Impact of acceptor states in MgxZn1-xO Schottky photodiodes" Internacional Conference on II-VI Compounds, Saint Petersburg (Russia), 2009
44: (2009)
A. NAKAMURA, T. HAYASHI, J. TEMMYO, A. HIERRO, G. TABARES, J.M.ULLOA, E.MUÑOZ "Schottky barrier contacts formed on polar-, nonporlar-MgxZn1-xO film grown by remote-plasma-enhanced MOCVD" Internacional Conference on II-VI Compounds, San Petersburgo, Rusia, 2009
45: (2009)
A. REDONDO-CUBERO, J. PEREIRO, J. GRANDAL, K. LORENZ, N. FRANCO, R. GAGO, E. MUÑOZ, M. A. SÁNCHEZ-GARCÍA, E. CALLEJA, E. ALVES "Structural study of the epitaxial growth in InGaN/GaN heterostructures by ion beam analysis" 33rd Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2009) Málaga (Spain), 2009.
46: (2009)
A. REDONDO-CUBERO, K. LORENZ, N. FRANCO, S. FERNÁNDEZ-GARRIDO, R. GAGO, P. J. M. SMULDERS, E. MUÑOZ, E. CALLEJA, I. M. WATSON, E. ALVES "Accurate measurement of strain in semiconductors heterostructures by high-energy ion channelling: the influence of steering effects" 19th International Conference on Ion Beam Analyis Cambridge (UK), 2009
47: (2009)
A. REDONDO-CUBERO, R. GAGO, K. LORENZ, N. FRANCO, E. MUÑOZ, M.-A. DI FORTE POISSON, E. ALVES "Depth-resolved analysis of phase separation in AlInN by ion channeling" 19th International meeting on Ion Beam Analysis (IBA 2009) 19th International meeting on Ion Beam Analysis (IBA 2009)
48: (2009)
A. REDONDO-CUBERO, R. GAGO, K. LORENZ, N. FRANCO, E. MUÑOZ, M.-A. DI FORTE POISSON, E. ALVES "Depth-resolved analysis of phase separation in AlInN by ion channeling" 19th International meeting on Ion Beam Analysis (IBA 2009) Cambridge (UK), 2009
49: (2009)
C. RIVERA, F. GONZÁLEZ-POSADA, E. MUÑOZ "Electric-field-Induced-strain effects on the degradation of III-Nitride-based HEMTs" 33rd WOCSDICE Malaga (Spain), 2009
50: (2009)
C. RIVERA, F.GONZÁLEZ-POSADA FLORES, E. MUÑOZ. "Strain-induced effects on the degradation of III-Nitride-based HEMTs". 33st Workshop on Compound Semiconductor Devices and Integrated Circuits 2009 Málaga (Spain), 2009.
51: (2009)
G.TABARES, A.HIERRO, J.M.ULLOA, E.MUÑOZ, A. NAKAMURA, T. HAYASHI, J. TEMMYO "Responsivity and transient response of non-polar Au-MgXZn1-xO Schottky photodiodes" Spring European Materials Research Society Conference 2009 Strasburg (France), 2009
52: (2009)
I. TANARRO, MM. SANZ, M.F. ROMERO, E. MUÑOZ, A. JIMÉNEZ "Plasma and surface diagnostics of silicon nitride thin film coatings" International Symposium of Plasma Chemistry 19 Bochum (Germany), 2009
53: (2009)
J. MATEOS, S. PÉREZ, R. CUERDO, E. MUÑOZ, F. CALLE, T. GONZÁLEZ "Monte Carlo Simulation of GaN HEMTs: Influence of GaN p-type Doping and High Temperature of Operation" 33rd Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE¿09) Málaga (Spain), 2009
54: (2009)
M. F. ROMERO, A. JIMÉNEZ, C. PALACIO, D. DÍAZ, E. MUÑOZ "Electrical and Microstructural Characteristics of Ohmic Contacts formation on AlGaN/GaN HEMT" 7th Spanish Conference on Electronic Devices CDE-09. IEEE, Electron Devices, 258-261, ISBN: 978-1-4244-2838-0 Santiago de Compostela (Spain), 2009
55: (2009)
R. CUERDO, M. UREN, M.-A. DI FORTE POISSON, E. MUÑOZ, F. CALLE "DC and microwave behaviour of AlGaN/GaN HEMTs on SiC at high temperature" 33rd Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE09) Málaga (Spain), 2009
56: (2009)
S. FERNANDEZ-GARRIDO, Z. GACEVIC, E. CALLEJA, A. REDONDO-CUBERO, R. GAGO, E.MUÑOZ "A Comprehensive Diagram to Grow Inaln Alloys By Plasma-Assisted Molecular Beam Epitaxy" 15th European Molecular Beam Epitaxy Workshop Zakopane (Poland), 2009
57: (2010)
G. MENEGHESSO, A. STOCCO, N. RONCHI, E. ZANONI, R. CUERDO, F. CALLE, E. MUNOZ, M.J. UREN " Kink and Cathodoluminescence in AlGaN/GaN HEMTs" Proc. 34th Workshop on Compound Semiconductors and Integrated Circuits, WOCSDICE 2010. Seeheim-Darmstadt (Germany), 2010
58: (2010)
J. LÓPEZ-GEJO , A. ARRANZ, A. NAVARRO, C. PALACIO, E. MUÑOZ, G. ORELLANA "New integrated oxygen sensors based on GaN emitters covalently funcionalized with luminiscent Ru(II) complexes". X European Conference on Optical Sensors and Biosensors. Republica Checa (Praga), 2010
59: (2010)
K. YAMAMOTO, A. HIERRO, E. MUÑOZ, A. NAKAMURA, J. TEMMYO "ZnCdO multiple-quantum-well green LEDs" 6th International Workshop on ZnO and Related Materials Changchun (China), 2010.
60: (2011)
ANALYSIS OF THE PHOTOLUMINESCENCE OF Zn1-XCdXO NANOWIRES UNDER THERMAL ANNEALING
61: (2011)
Analysis of the photoluminescence of zn1-xcdxo nanowires under thermal annealing
62: (2011)
Controlled diffusion of Au/Ni/Al/Ti ohmic contacts in AlGaN/GaN HEMTs: limits for the barrier effect of Al
63: (2011)
Electrochemical capacitance voltage profiling of transition from surface electron depletion to accumulation with increasing In-content in InGaN alloys
64: (2011)
Impact of N2 plasma power and duration on AlGaN/GaN HEMT
65: (2011)
Impact of N2 plasma power and duration on AlGaN/GaN HEMT
66: (2011)
InGaN photodetectors and applications in biophotonics
67: (2011)
Oxide based UV photodetection using schottky photodiodes
68: (2011)
Processing and adsorption control in ZnO single nanowire photodetectors
69: (2011)
Processing and adsorption control in ZnO single nanowire photodetectors
70: (2011)
Relaxation, crystal quality and phase separation in InGaN epilayers grown at intermediate contents (x~0.5)
71: (2011)
Thermal effects in Ni/Au and Mo/Au gate metallization AlGaN/GaN HEMT¿s reliability
72: (2011)
8th Spanish conference on electron devices
73: (2012)
'Direct Grafting of Long-lived Luminescent Indicator Dyes to GaN Light-emitting Diodes (LEDs) for Chemical Microsensor Development
74: (2012)
Formation of Au/Ti/Al/Ti ohmic contacts for AlGaN/GaN transistors: an ion beam study
75: (2012)
In-depth diffusion and homogeneity of metallic contacts for GaN-based microdevices
76: (2012)
Integrated luminescent chemical microsensors based on GaN LEDs for security applications using smartphones
77: (2012)
Photochemistry of hybrid GaN semiconductor/luminescent dye composites for chemical microsensors and dye-sensitized solar cells
78: (2012)
Photochemistry of Hybrid GaN semiconductor/Luminiscent Dye composites for chemical microsensors and dye-sensitized solar cells
79: (2012)
Study of the effect of rapid thermal annealing in high Cd content Zn1-XCdXO nanowires grown by MOCVD
80: (2012)
Time-resolved Photoluminescence spectroscopy of Zn1-XCdXO nanowires
81: (2013)
Acceptor Levels Probed by DLOS in ZnMgO:N
82: (2014)
Deep Level Analysis of Homoepitaxial ZnO Doped with N
83: (2014)
Light Polarization Sensitive Photodetectors with Non-Polar and Semi-Polar Homoepitaxial ZnO/ZnMgO MQWs
84: (2014)
Morphological and Structural Characterization of MgxZn1-xO?, 8th International Workshop on Zinc Oxide and Related Materials
85: (2014)
Optical Properties of ZnMgO Grown by Spray Pyrolysis and Development of MSM Photodetectors for the UV
86: (2014)
ZnCdO/ZnO Multiple Quantum Well Nanowires Emitting in the Visible
87: (2015)
Deep levels in homoepitaxial ZnO and the effect of N doping
88: (2016)
Deep level analysis of non-polar and semipolar homoepitaxial ZnO
89: (2016)
Deep level spectroscopy in metal-insulator-semiconductor structures
90: (2019)
Double-interface surface plasmon modes in CdZnO thin films and their hybridization with phonons
91: (2019)
Rock-salt CdZnO for IR plasmonics
Explotación de Resultados y Transferencia de Tecnología
6 Patentes
1: (2007)
Inventores (p.o. de firma):Sr. D. Carlos Rivera de Lucas, Sr. D. Elías Muñoz Merino, Sr. D. Holger T. Grahn, "Procedimiento y sistema de detección de polarización de la luz con respuesta paso de banda". Referencia: UPM/PAT-2007/020.Solicitud: P200701926
2: (2008)
Sistema de detección de polarización de la luz con respuesta paso banda
3: (2010)
ALVARO NAVARRO TOBAR, DR. ELIAS MUÑOZ MERINO.- "Método y sistema de medida del tiempo de vida de fluorescencia en el dominio de la frecuencia con altos niveles de señal de fondo" Solicitada 2009
4: (2010)
DR. CARLOS RIVERA DE LUCAS, DR. ELIAS MUÑOZ MERINO. DR. HOLGER T. GRAHN "Sistema de detección de la polarización de la luz con respuesta paso de banda". Solicitada 2008
5: (2010)
DR. ELIAS MUÑOZ, DR. CARLOS RIVERA DE LUCAS, DR. HOLGER T. GRAHN Sistema de detección de la polarización de la luz con respuesta paso de banda
6: (2010)
Sistema de detección de polarización de la luz con respuesta paso banda
• TOMA DE DATOS DE MEMORIAS Y CV
• UPM.ES
S2i 2023 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNPACTO (IPT-020000-2010-22)
