Observatorio de I+D+i UPM
• ESPAÑOL
• ENGLISH
INVESTIGADORES
ESTRUCTURAS DE I+D+I
ACTIVIDAD INVESTIGADORA
INNOVACIÓN
Investigador
Adrian Hierro Cano
Categoría Investigador
CATEDRATICO UNIVERSIDAD
Escuela UPM
E.T.S. DE INGENIEROS DE TELECOMUNICACION
Departamento:
INGENIERÍA ELECTRÓNICA
Centros/Institutos I+D+i
INST.SIST.OPTOELECT. MICROTECNOL. "ISOM"
Area Conocimiento
TECNOLOGIA ELECTRONICA
Grupo de Investigación:
Grupo de Dispositivos Semiconductores del ISOM
Email (Directorio UPM)
adrian.hierro
upm.es
Teléfono (Directorio UPM)
910672213
Datos de Memorias relacionados
Proyectos de I+D+i y generación de recursos
48 Proyectos de I+D+i
1: (2007)
"Asistencia técnica para el control y caracterización de las matrices tricolor del demostrador SIRIO"PROGRAMA DN8644: COINCIDENTE SIRIO (2006-2007. CIDA- Univ. Politécnica
2: (2007)
"Ayudas para apoyar las líneas de I+D en el programa de creación y consolidación de grupos de investigación de la Universidad Politécnica de Madrid. CAM, Referencia: CCG07-UPM/000-3220"
3: (2007)
"Desarrollo de láseres horizontales y de cavidad vertical para la banda de 1.35 a 1.55 micras basados en pozos cuánticos de GaInNAs/GaAs" Min. Educación y Ciencia, TEC2005-03694/MIC (2005-2008).
4: (2007)
"Desarrollo matriz de detectores multiespectral en el infrarrojo 3-5 micras"FIT-330101-2007-11 (2007-2009)
5: (2007)
"International Workshop 2007 on MBE". Sierra Nevada, Granada, España. ISOM-UPM
6: (2007)
"Microscopio de barrido de capacidad para caracterización de nanoestructuras". Min. Educación y Ciencia, UNPM06-33-037 (2007)
7: (2007)
"Nanoestructuras de Semiconductores como Componentes para la Información Cuántica (NANIC)" Min. Educación y Ciencia, Acción Estratégica en Nanotecnología. NAN2004-09109-C04-02. (2005-2008).
8: (2007)
"Nanoestructuras de Semiconductores como Componentes para la Información Cuántica (NANIC)" Min. Educación y Ciencia, Acción Estratégica en Nanotecnología. NAN2004-09109-C04-02. (2005-2008).
9: (2007)
"Nanoestructuras de semiconductores como componentes para la información cuántica"(NANOCOMIC)
10: (2007)
"Sistema de caracterización óptica avanzada multifuncional"
11: (2007)
"14th European Workshop on MBE, Sierra Nevada, Granada, ESPAÑA" Min. Educación y Ciencia, ACC-030000-2007-3 (2007)
12: (2007)
"14th European Workshop on MBE, Sierra Nevada, Granada, ESPAÑA" Min. Educación y Ciencia, ACC-030000-2007-3(2007)
13: (2007)
"14th European Workshop on MBE, Sierra Nevada, Granada, ESPAÑA" Ministerio de Educación y Ciencia.TEC2007-30322-E/ (2007)
14: (2007)
"14th European Workshop on MBE, Sierra Nevada, Granada, ESPAÑA" Ministerio de Educación y Ciencia.TEC2007-30322-E/ (2007)
15: (2007)
"14th European Workshop on MBE, Sierra Nevada, Granada, ESPAÑA.ISOM-UPM
16: (2008)
Ayudas financieras para la mejora de las infraestructuras científicas y tecnológicas singulares y para el acceso a las mismas
17: (2008)
Ayudas para apoyar las líneas de I+D en el programa de creación y consolidación de grupos de investigación de la UPM. (Resolución de 19 de junio de 2007)
18: (2008)
Desarrollo de láseres horizontales y de cavidad vertical para la banda de 1.35 a 1.55 micras basados en pozos cuánticos de GaInNAs/GaAs
19: (2008)
Nano y microdispositivos basados en ZnO para la detección de H2 y UV (THINKOXIDE)
20: (2008)
Nanoestructuras de semiconductores como componentes para la información cuántica
21: (2008)
14th European Molecular Beam Epìtaxy" Acción complementaria ACC-030000-2007-3
22: (2008)
14th European Molecular Beam Epìtaxy. Acción complementaria TEC2007-30322-E/
23: (2009)
DESARROLLO DE LASERES HORIZONTALES Y DE CAVIDAD VERTICAL PARA LA BANDA DE 1.35 A 1.55 MICRAS.....
24: (2009)
FONDOS FEDER A DISPOSICION DE INVESTIGADORES
25: (2009)
NANO
26: (2010)
NANO
27: (2010)
NANO Y MICRODISPOSITIVOS BASADOS EN ZNO PARA LA DETECCIÓN DE H2 Y UV (THINKOXIDE)
28: (2010)
ZnMGO-BASED NANOCOLUMNAR AND CORE-SHELL LEDS WITH HIGH POWER EFFICIENCES
29: (2010)
"ZnMGO-Based nanocolumnar and core-shell LEDs with high power efficiences (THINKLEDs)" ACCION DE COOPERACIÓN CON JAPON Referencia: PIB2010JP-00279
30: (2011)
COMPONENTES PARA FOTONICA DE UV BASADA EN OXIDOS
31: (2011)
''Emerging oxide-based UV Photonics''.
32: (2011)
NANO
33: (2011)
SMASH: Smart nanostructured semiconductors for energy saving light solutions
34: (2011)
ZNIMGO-BA SED NANOCOLUMNAR AND CORE-SHELL LEDS WITH HIGH POWER EFFICIENCIES
35: (2012)
COMPONENTES PARA FOTONICA DE UV BASADA EN OXIDOS
36: (2012)
ZNIMGO-BA SED NANOCOLUMNAR AND CORE-SHELL LEDS WITH HIGH POWER EFFICIENCIES
37: (2013)
COMPONENTES PARA FOTONICA DE UV BASADA EN OXIDOS
38: (2013)
ZNIMGO-BA SED NANOCOLUMNAR AND CORE-SHELL LEDS WITH HIGH POWER EFFICIENCIES
39: (2014)
COMPONENTES PARA FOTONICA DE UV BASADA EN OXIDOS
40: (2014)
Ingeniería de bandas con nuevas estructuras de semiconductores II-VI para optoelectrónica avanzada de VIS-IR
41: (2014)
ZNIMGO-BA SED NANOCOLUMNAR AND CORE-SHELL LEDS WITH HIGH POWER EFFICIENCIES
42: (2015)
: Componentes para fotónica de UV basada en óxidos
43: (2015)
BEAIO: Ingeniería de bandas con nuevas estructuras de semiconductores II-VI para optoelectrónica avanzada de VIS-IR
44: (2015)
COMPONENTES PARA FOTONICA DE UV BASADA EN OXIDOS
45: (2015)
FESEM: Extension de medida de catodoluminiscencia (cl) al rango infrarojo en microscopio de barrido electrónico FESEM
46: (2015)
FESEM: Extensión de medida de catodoluminiscencia(CL) al rango infrarrojo en microcospio de barrido electrónico FESEM
47: (2015)
Zoterac: Zinc Oxide For TeraHertz Cascade Devices
48: (2018)
OXPLIR: Plasmónica basada en óxidos para fotodetectores de IR
Formación de Investigadores y Movilidad
7 Estancias y sabáticos recogidos en programas oficiales
1: (2007)
Estancia del Doctorando Miguel Montes Bajo, en la University of Sheffield, Department of Electronic and Electrical Engineering, III/V Facility of the EPSRC National Center for III-V Technologies, Sheffield (Reino Unido), Sheffield, para el aprendizaje de técnicas de procesado de láseres estrechos, durante 3 meses, 18/09/2008 al 19/12/2007
2: (2009)
D. Adrián Hierro Herrero "Research Institute for Electronics- University of Shizuoka" Shizuoka, Japón 2009
3: (2010)
GEMA TABARES.- Estancia en Department of Electrical and Computer Engineering, Ohio State University (EEUU), bajo la dirección del Profesor Steven Ringel, duración 3 meses.
4: (2012)
ESTANCIA INVESTIGADORA DE MANUEL LOPEZ PONCE.-TRPL in ZnCdO nanowires
5: (2015)
Diseño y crecimiento mediante epitaxia de haces moleculares (MBE) de heterostructuras de ZnO/ZnMgO para la realización de dispositivos optoelectrónicos
6: (2015)
Estancia por Programa Erasmus.- Hajar Bencheikh. Lugar de origen: Insa Lyon, France
7: (2016)
Estancia de Oleksii Klymov
5 Tesis Doctorales
1: (2010)
GaAs-based quantum well and quantum dot light-emitting diodes and lasers for 1.3 and 1.55 um emission
2: (2014)
Fotodiodos basados en (Zn,Mg)O para la detección de luz ultravioleta
3: (2015)
Propiedades Ópticas y Estructurales de nanoestructuras de Zn(Cd)(Mg)O
4: (2017)
Deep levels and acceptors in Zn(Mg)O: effect of N-doping
5: (2019)
Infrared intersubband detection and plasmonics with (Zn,Mg)O and (Cd,Zn)O compounds
Difusión de Resultados de Investigación
102 Artículos en revistas
1: (2007)
J. MIGUEL-SÁNCHEZ, A. GUZMÁN, U. JAHN, A. TRAMPERT, J. M. ULLOA, E. MUÑOZ, A. HIERRO "Role of ionized nitrogen species in the optical and structural properties of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy"Journal of Applied Physics, 101,1035261-10352616 (2007) ISSN: 0021-8979
2: (2008)
Analysis of the characteristic temperatures of (Ga,In)(N,As)/GaAs laser diodes
3: (2008)
Local vibration modes and nitrogen incorporation in AlGaAs: N layers
4: (2008)
Resonant Raman study of local vibrational modes in AlGaAsN layers
5: (2008)
Resonant Raman-active localized vibrational modes in AlyGa{1-y}NxAs{1-x} alloys: Experiment and firstprinciples calculations
6: (2008)
The effect of rapid thermal annealing on the photoluminescence of InAsN/InGaAs dot-in-a-well structures
7: (2008)
The effect of the individual species of the N plasma on the characteristics of InAsN quantum dots grown by MBE
8: (2008)
Vertical composition fluctuations in (Ga,In)(N,As) quantum wells grown on vicinal (1 1 1)B GaAs
9: (2009)
A.HIERRO, G. TABARES, J. M. ULLOA, E. MUÑOZ, A. NAKAMURA, T. HAYASHI, J. TEMMYO "Carrier compensation by deep levels in Zn1-xMgxO/sapphire" Applied Physics Letters, 94, 232101-1, 232101-3 (2009)
10: (2009)
M. MONTES, A. HIERRO, J. M. ULLOA, A. GUZMÁN, M. AL KHALFIOUI, M. HUGUES, B. DAMILANO, J. MASSIES "Electroluminescence analysis of 1.3-1.5 µm InAs quantum dot LEDs with (Ga,In)(N,As) capping layers" Physical Status Solidi (c), 6, 6, 1424-1427 (2009)
11: (2009)
R. GARGALLO-CABALLERO, Á.GUZMÁN, M. HOPKINSON, J. M. ULLOA, A. HIERRO, E. CALLEJA "Dependence of N incorporation into (Ga)InAsN QDs on Ga content probed by rapid thermal annealing" Physica status solidi (c), 6,6, 1441-1444 (2009)
12: (2010)
A. NAKAMURA,T. HAYASHI , A.HIERRO, G.TABARES, J.M.ULLOA, E.MUÑOZ, J. TEMMYO, "Schottky barrier contacts formed on polar and nonpolar MgxZn1-xO films grown by remote plasma enhanced MOCVD" Phys. Status Solidi B 247, 1472-1475, 2010.
13: (2010)
Current Spreading Efficiency and Fermi Level Pinning in GaInNAs-GaAs Quantum-Well Laser Diodes
14: (2010)
External efficiency and carrier loss mechanisms in InAs/GaInNAs quantum dot light-emitting diodes
15: (2010)
G. TABARES, A. HIERRO, J.M. ULLOA, A. GUZMAN, E. MUÑOZ, A. NAKAMURA, T. HAYASHI, J. TEMMYO "High responsivity and internal gain mechanisms in Au-ZnMgO Schottky photodiodes" Applied Physics Letters 96, 101112/1-101112/3, 2010.
16: (2010)
High responsivity and internal gain mechanisms in Au-ZnMgO Schottky photodiodes
17: (2010)
J.M. ULLOA, R. GARGALLO-CABALLERO, M. BOZKURT, M. DEL MORAL, P. M. KOENRAAD, A. GUZMAN, A. HIERRO ''GaAsSb-capped InAs quantum dots: from enlarged quantum dot height to alloy fluctuations'' Physical Review B, 81, 165305 (2010)
18: (2010)
M. MONTES, A. GUZMAN, A. TRAMPERT, A. HIERRO, "1.3 µm emitting GaInNAs/GaAs quantum well resonant cavity LEDs", Solid-State Electronics 54, 492-496, 2010.
19: (2010)
M. MONTES, A. HIERRO, J. M. ULLOA, A. GUZMÁN, M. AL KHALFIOUI, M. HUGUES, B. DAMILANO, J. MASSIES "External efficiency and carrier loss mechanisms in InAs/GaInNAs quantum dot light emitting diodes". Journal of Applied Physics 108, 033104/1-033104/8, 2010.
20: (2010)
M. MONTES, A. HIERRO, J. M ULLOA, J. MIGUEL-SÁNCHEZ, A. GUZMÁN, B. DAMILANO, M. HUGUES, M. AL KHALFIOUI, J.-Y. DUBOZ, J. MASSIES, "Current spreading efficiency and Fermi level pinning in GaInNAs/GaAs quantum well laser diodes" IEEE Journal of Quantum Electronics 46, 1058-1065, 2010.
21: (2011)
Green Electroluminescence From ZnCdO Multiple Quantum-Well Light-Emitting Diodes Grown by Remote-Plasma-Enhanced Metal-Organic Chemical Vapor Deposition
22: (2011)
Inhibition of In desorption in diluted nitride InAsN quantum dots
23: (2011)
Metamorphic In0.20Ga0.80As p-i-n photodetectors grown on GaAs substrates for near infrared applications
24: (2011)
Near Infrared InAs/GaAsSb Quantum Dot Light Emitting Diodes
25: (2011)
Polarization-sensitive Schottky photodiodes based on a-plane ZnO/ZnMgO multiple quantum-wells
26: (2011)
Room temperature absorption in laterally biased Quantum Infrared Detectors fabricated by MBE regrowth
27: (2011)
Single phase a-plane MgZnO epilayers for UV optoelectronics: substitutional
28: (2012)
Analysis of the modified optical properties and band structure of GaAs1-xSbx-capped InAs/GaAs quantum dots
29: (2012)
Analysis of the modified optical properties and band structure of GaAs12xSbx-capped InAs/GaAs quantum dots
30: (2012)
Deep levels in a-plane, high Mg-content MgxZn1-xO epitaxial layers grown by molecular beam epitaxy
31: (2012)
Deep levels in a-plane, high Mg-content MgxZn1-xO epitaxial layers grown by molecular beam epitaxy
32: (2012)
High efficient luminescence in type-II GaAsSb-capped InAs quantum dots upon annealing
33: (2012)
High efficient luminescence in type-II GaAsSb-capped InAs quantum dots upon annealing
34: (2012)
Impact of N on the atomic-scale Sb distribution in quaternary GaAsSbN-capped InAs quantum dots
35: (2012)
Impact of N on the atomic-scale Sb distribution in quaternary GaAsSbN-capped InAs quantum dots
36: (2012)
Impact of the Ga/In ratio on the N incorporation into (In,Ga)(As,N) quantum dots
37: (2012)
Independent tuning of electron and hole confinement in InAs/GaAs quantum dots through a thin GaAsSbN capping layer
38: (2012)
Kinetic Monte Carlo simulations and cross-sectional scanning tunneling microscopy as tools to investigate the heteroepitaxial capping of self-assembled quantum dots
39: (2012)
Self-assembled MgxZn1-xO quantum dots (0¡Ü x ¡Ü1) on different substrates using spray pyrolysis methodology
40: (2012)
Single phase alpha-plane MgZnO epilayers for UV optoelectronics: substitutional behaviour of Mg at large contents
41: (2013)
Electrical characterization of Schottky contacts to n-MgZnO films
42: (2013)
Electrical characterization of Schottky contacts to n-MgZnO films
43: (2013)
Impact of the Sb content on the performance of GaAsSb-capped InAs/GaAs quantum dot lasers
44: (2013)
Impact of the Sb content on the performance of GaAsSb-capped InAs/GaAs quantum dot lasers
45: (2013)
Optical properties and microstructure of 2.02-3.30 eV ZnCdO nanowires: Effect of thermal annealing
46: (2013)
Optical properties and microstructure of 2.02-3.30 eV ZnCdO nanowires: Effect of thermal annealing
47: (2013)
Self-assembled MgxZn1-xO quantum dots (0 <= x <= 1) on different substrates using spray pyrolysis methodology
48: (2013)
Self-assembled MgxZn1-xO quantum dots (0 <= x <= 1) on different substrates using spray pyrolysis methodology
49: (2014)
Acceptor levels in ZnMgO:N probed by deep level optical spectroscopy
50: (2014)
Capping layer growth rate and the optical and structural properties of GaAsSbN-capped InAs/GaAs quantum dots
51: (2014)
GaAsSb/GaAsN short-period superlattices as a capping layer for improved InAs quantum dot-based optoelectronics
52: (2014)
Long-wavelength room-temperature luminescence from InAs/GaAs quantum dots with an optimized GaAsSbN capping layer
53: (2014)
VIS-UV ZnCdO/ZnO multiple quantum well nanowires and the quantification of Cd diffusion
54: (2015)
Effect of annealing in the Sb and In distribution of type II GaAsSb-capped InAs quantum dots
55: (2015)
Impact of Mg content on native point defects in MgxZn1-xO (0 <= x <= 0.56)
56: (2015)
Light polarization sensitive photodetectors with m- and r-plane homoepitaxial ZnO/ZnMgO quantum wells
57: (2015)
Native point defect energies, densities, and electrostatic repulsion across (Mg, Zn)O alloys
58: (2015)
Optical properties of ZnMgO films grown by spray pyrolysis and their application to UV photodetection
59: (2015)
Role of the wetting layer in the enhanced responsivity of InAs/GaAsSb quantum dot infrared photodetectors
60: (2015)
Stacked GaAs(Sb)(N)-capped InAs/GaAs quantum dots for enhanced solar cell efficiency
61: (2015)
Type II InAs/GaAsSb quantum dots: Highly tunable exciton geometry and topology
62: (2015)
ZnO/ZnMgO multiple quantum well light polarization sensitive photodetectors
63: (2016)
Electrical mechanisms for carrier compensation in homoepitaxial nonpolar m-ZnO doped with nitrogen
64: (2016)
General route for the decomposition of InAs quantum dots during the capping process
65: (2016)
General route for the decomposition of InAs quantum dots during the capping process
66: (2016)
Impact of alloyed capping layers on the performance of In As quantum dot solar cells
67: (2016)
Impact of alloyed capping layers on the performance of In As quantum dot solar cells
68: (2016)
Influence of Sb/N contents during the capping process on the morphology of InAs/GaAs quantum dots
69: (2016)
Influence of Sb/N contents during the capping process on the morphology of InAs/GaAs quantum dots
70: (2016)
MOCVD growth of CdO very thin films: Problems and ways of solution
71: (2016)
Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells
72: (2016)
Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells
73: (2016)
Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells
74: (2016)
Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells
75: (2016)
Wurtzite Zn1-y(MgxCd1-x)(y)O quaternary systems for photodiodes in visible spectral range
76: (2016)
ZnMgO-based UV photodiodes: a comparison of films grown by spray pyrolysis and MBE
77: (2017)
Deep-level spectroscopy in metal-insulator-semiconductor structures
78: (2017)
Homoepitaxy of non-polar ZnO/(Zn,Mg)O multi-quantum wells: From a precise growth control to the observation of intersubband transitions
79: (2017)
Quantitative analysis of the interplay between InAs quantum dots and wetting layer during the GaAs capping process
80: (2017)
Strain-balanced type-II superlattices for efficient multi-junction solar cells
81: (2017)
Strain-balanced type-II superlattices for efficient multi-junction solar cells
82: (2017)
Strain-balanced type-II superlattices for efficient multi-junction solar cells
83: (2017)
Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells
84: (2017)
Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells
85: (2018)
Breaking the Intersubband Selection Rules for Absorption with ZnO Quantum Wells: Light Polarization Sensitivity under Normal Incidence
86: (2018)
GaAsN/GaAsSb superlattices as 1 eV layers for efficient multi-junction solar cells
87: (2018)
Ga-doping of nonpolar m-plane ZnMgO with high Mg contents
88: (2018)
Intersubband transitions and many body effects in ZnMgO/ZnO quantum wells
89: (2018)
Multisubband Plasmons in Doped ZnO Quantum Wells
90: (2018)
Rock-salt CdZnO as a transparent conductive oxide
91: (2018)
Short infrared wavelength quantum cascade detectors based on m-plane ZnO/ZnMgO quantum wells
92: (2018)
Size and shape tunability of self-assembled InAs/GaAs nanostructures through the capping rate
93: (2018)
Type-II GaAsSb/GaAsN superlattice solar cells
94: (2018)
Type-II GaAsSb/GaAsN superlattice solar cells
95: (2019)
Controllable and Highly Propagative Hybrid Surface Plasmon-Phonon Polariton in a CdZnO-Based Two-Interface System
96: (2019)
Effect of capping rate en InAs/GaAs quantum dot solar cells
97: (2019)
Intersubband absorption at normal incidence by m-plane ZnO/MgZnO Quantum Wells
98: (2019)
Intersubband plasmons induced negative refraction at mid-IR frequency in heterostructured semiconductor metamaterials
99: (2019)
Observation of Intersubband Absorption in ZnO Coupled Quantum Wells
100: (2019)
Open circuit voltage recovery in GaAsSbN-based solar cells: Role of deep N-related radiative states
101: (2019)
Optical Phase Transition in Semiconductor Quantum Metamaterials
102: (2019)
Short infrared wavelength quantum cascade detectors based on non-polar ZnO/ZnMgO quantum wells
5 Capítulos de libros
1: (2007)
A. HIERRO, J.M. ULLOA, J. MIGUEL-SÁNCHEZ, A. GUZMÁN, A. TRAMPERT, E. TOURNIE "Photo- and Electro-luminescence from GaInNAs/GaAs single quantum wells and light emitting diodes" Nitrides and Dilute Nitrides: Growth, Physics and Devices 2007, 77-98. ISBN 978-81-7895-250-5.
2: (2007)
A. HIERRO, J.M. ULLOA, J. MIGUEL-SÁNCHEZ, A. GUZMÁN, A. TRAMPERT, E. TOURNIE "Photo- and Electro-luminescence from GaInNAs/GaAs single quantum wells and light emitting diodes" Nitrides and Dilute Nitrides: Growth, Physics and Devices 2007, 77-98. ISBN 978-81-7895-250-5.
3: (2008)
Impact of Nitrogen Ion Density on the Optical and Structural Properties of MBE Growh GaInAs/GaAs (100) and (111)B Quantum Wells
4: (2008)
Photo- and Electro-luminescence from GaInNAs/GaAs single quantum wells and light emitting diodes
5: (2017)
The Impact of Alloyed Capping Layers on the Performance of InAs/GaAs Quantum Dot Solar Cells
20 Conferencias invitadas en congresos
1: (2010)
A.HIERRO "ZnMgO-based UV Photodetectors" Instituto de Ciencias de Materiales de Madrid, CSIC Madrid (Spain) 2010
2: (2012)
Ion beams as a tool for advanced structural characterization in ZnO-based materials
3: (2013)
GaAsSb(N)-capped InAs quantum dots: from atomic scale characterization to improved devices
4: (2015)
Modified InAs/GaAs quantum dots for enhanced solar cell efficiency
5: (2015)
ZnO/ZnMgO multiple quantum well light polarization sensitive photodetectors
6: (2016)
Scientific Meeting on Advanced Materials for New Technologies
7: (2016)
Strain-balanced type-II superlattices for efficient multi-junction solar cells
8: (2016)
ZnMgO-based UV photodiodes: a comparison of films grown by spray pyrolysis and MBE
9: (2017)
Mind-IR Intersubband absorption in m-plane ZnO/ZnMgO MQWs
10: (2017)
Non-polar ZnO/(Zn,Mg)O heterostructures for intersubband devices: novel applications with an old material system
11: (2017)
Strain-balanced type-II superlattices for efficient multi-junction solar cells
12: (2017)
Using MIS structures to probe bulk traps: the case of ZnO
13: (2018)
Breakage of the polarization selection rules for intersubband transitions in ZnO/MgZnO quantum wells
14: (2018)
Homoepitaxy of non-polar ZnO/(Zn,Mg)O multi-quantum wells: from a precise growth control to the observation of intersubband transitio
15: (2018)
Intersubband transitions and many body effects in ZnMgO/ZnO quantum wells
16: (2018)
Phonon-intersubband transition coupling in MgZnO/ZnO quantum wells.
17: (2019)
Interface phonon-polaritons as an all-optical technique to assess the Mg content in ZnO/MgZnO multiple quantum wells
18: (2019)
Intersubband transitions in wide band gap semiconductor oxides: a tool to tune the hyperbolic response in metamaterials
19: (2019)
Short infrared wavelength quantum cascade detectors based on non-polar ZnO/ZnMgO quantum wells
20: (2019)
Using ZnO multiple quantum well metastructures for IR light polarization sensitive photodetection under normal incidence
19 Cursos, seminarios y tutoriales
1: (2008)
Profesor Steven A. Ringel, Professor and Neal A. Smith Chair in Electrical Engineering Director, Ohio State University Institute for Materials Research Deep Level Optical Spectroscopy: Approach to Investigate Defects in GaN-AlGaN Materials and Devices
2: (2008)
Profesor Steven A. Ringel, Professor and Neal A. Smith Chair in Electrical Engineering Director, Ohio State University Institute for Materials Research Metamorphic III-V Materials for Infrared and High Speed Devices Based on Sub-Lattice Specific Grading
3: (2008)
Profesor Steven A. Ringel,Professor and Neal A. Smith Endowed Chair in Electrical Engineering Director, Ohio State Institute for Materials Research Epitaxial Integration of III-V Semiconductors, Devices and Solar Cells with Si via Lattice Engineering
4: (2010)
MANUEL LOPEZ PONCE "Procesado y caracterización de nanohilos de ZnO crecidos MOCVD-D".27/05/2010. ISOM-ETSIT-UPM. Madrid (España).
5: (2010)
Professor STEVEN A. RINGEL. "Spectrum Optimized Solar Cells and Green Light Emitters Using Engineered Si Substrates"-07/05/2010- Ohio State University and Institute for Materials Research (IMR)-Ohio-(USA)
6: (2011)
Challenges of Understanding GaN HEMT Degradation and Reliability and Recent Results. Prof. Steve A. Ringel
7: (2011)
II-Nitride FETs on Nitride Substrates. Prof. Masaaki Kuzuhara
8: (2011)
Jornada científica sobre FOTÓNICA EMERGENTE BASADA EN ÓXIDOS AVANZADOS
9: (2011)
Jornada científica sobre FOTÓNICA EMERGENTE BASADA EN ÓXIDOS AVANZADOS
10: (2011)
Oxide-based UV Photodetection
11: (2011)
Resultados de la caracterización eléctrica de los semiconductores GaInAs, GaInNAs, InN y GaN.
12: (2012)
Prof. Steve A. Ringel. The Ohio State University and Institute for Materials Research (IMR), Ohio (USA). "An introduction to photovoltaics"
13: (2013)
Applications of ion beam techniques for the study of semiconductors: from growth to processing issues, SEMINARIO INVITADO IMPARTIDO POR ANDRES REDONDO CUBERO
14: (2013)
Type II InAs/GaSb superlattice infrared photodetectors. SEMINARIO INVITADO IMPARTIDO POR WENQUAN MA
15: (2014)
Electronic Structure and Properties of Transparent Conducting Oxide Semiconductors
16: (2015)
Propiedades Ópticas y Estructurales de nanoestructuras de Zn(Cd)(Mg)O
17: (2016)
Si-based Tandem and Multijunction Solar Cells Using III-V Compounds
18: (2018)
Quick view on our research exchange and interaction with Chonqing Univ. (China) on next perovskites and oxides photovoltaics
19: (2019)
b-Ga2O3 Materials and Devices: MBE and MOCVD Comparisons and Record Transport Properties From the Perspective of Defects
6 Otras Publicaciones
1: (2011)
Processing and adsorption control in ZnO single nanowire photodetectors
2: (2015)
Hacia una nueva era en la emisión y la detección de radiación de terahercios. Comienza el proyecto europeo ZOTERAC liderado por Adrián Hierro, que aspira a inaugurar una nueva era en la emisión y detección de radiación de terahercios (THz). La tecnología que surja podría reemplazar a los rayos X convencionales en el campo de la medicina, o mejorar la detección de armas y explosivos, entre otras numerosas aplicaciones. Noticias en la UPM www.zoterac.eu Dr. Adrián Hierro adrian.hierro@upm.es
3: (2016)
Analysis of capping with GaAsSbN thin layers in (un)coupled InAs/GaAs multi quantum dot layers for enhanced solar cells
4: (2016)
Analysis of the Sb and N distribution in GaAsSb/GaAsN superlattices for solar cell applications
5: (2017)
Strain-balanced Type-II superlatices for efficient multi-juntion solar cells
6: (2018)
Artículo de interés publicado en revista científica. Autores: M. Montes Bajo, J. Tamayo-Arriola, M. Hugues, JM. Ulloa, Nolwenn Le Biavan, R. Peretti, F. H. Julien, J.Faist, J-M Chauveau, A. Hierro, Título: 'Multisubband Plasmons in Doped ZnO Quantum Wells', Revista: Physics Review Applied, Editor's Suggestion, vol. 10, 024005 (2018)
124 Ponencia en Congresos
1: (2007)
A. Hierro "Diluted Nitrides For Ir Lasing Applications" 31st Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2007 Venecia (Italia) 20 al 23 de mayo de 2007
2: (2007)
J. Miguel-Sánchez, M. Montes, A. Hierro, R. Gargallo-Caballero, A. Guzmán, E. Muñoz, S. Lazic, E. Gallardo, J. M. Calleja "Growth And Characterization Of Algaas(N) On Gaas" 14th European Molecular Beam Epitaxy Workshop 2007 Sierra Nevada, Granada (ESPAÑA) 5 al 7 de marzo de 2007
3: (2007)
J. Miguel-Sánchez, M. Montes, A. Hierro, R. Gargallo-Caballero, A. Guzmán, E. Muñoz, S. Lazic, E. Gallardo, J. M. Calleja "Growth And Characterization Of Algaas(N) On Gaas" 14th European Molecular Beam Epitaxy Workshop 2007 Sierra Nevada, Granada (ESPAÑA) 5 al 7 de marzo de 2007
4: (2007)
M. Montes, A. Hierro, B. Damilano, M. Hugues, M. Al Khalfioui, J.-Y. Duboz, J. Massies "Analysis Of Gain Spectra and Fermi Level Pinning Of Gainnas/Gaas Quantum Well Lasers With 0 To 3.3% N Content" European Materials Research Society 2007 Spring Meeting Estrasburgo (Francia) 28 de mayo al 1 Junio de 2007
5: (2007)
M. Montes, A. Hierro, J.M. Ulloa, B. Damilano, M. Hugues, M. Al Khalfioui, J.-Y. Duboz, J. Massies "Role of N plasma species on the morphology and luminescence of InAsN quantum dots grown by MBE" European Materials Research Society (E-MRS) Spring Meeting Estrasburgo (Francia) 28 de mayo al 1 Junio de 2007
6: (2007)
R. Gargallo-Caballero, A.Guzmán, J. Miguel-Sánchez, A. Hierro, E.Muñoz. "Analysis of gain spectra and Fermi level pinning of GaInNAs/GaAs quantum well lasers with 0 to 3.3% N content" European Materials Research Society Meeting (E-MRS) 2007 Estrasburgo (Francia) 28 de mayo al 1 Junio de 2007
7: (2007)
R. Gargallo-Caballero, Á.Guzmán, J. Miguel-Sánchez, A. Hierro. "Role Of N Plasma Species On The Morphology And Luminescence Of InAsN Quantum Dots Grown By Mbe" European Materials Research Society Meeting (E-MRS) 2007 Estrasbourg (Francia) 28 de mayo al 1 Junio de 2007
8: (2007)
R. Gargallo-Caballero, Á.Guzmán, J. Miguel-Sánchez, A. Hierro. "Role Of N Plasma Species On The Morphology And Luminescence Of Inasn Quantum Dots Grown By Mbe" European Materials Research Society Meeting (E-MRS) 2007 Estrasbourg (Francia) 28 de mayo al 1 Junio de 2007
9: (2007)
R. Gargallo-Caballero, J. Miguel-Sánchez, Á. Guzmán, A. Hierro, E. Muñoz. "Structural and optical study of InAsN quantum dots grown on GaAs(100) and buried with different materials" 14th European Molecular Beam Epitaxy Workshop 2007 Sierra Nevada, Granada (ESPAÑA) 5 al 7 de marzo de 2007
10: (2007)
S. Lazic, E. Gallardo, J.M. Calleja, J. Miguel-Sánchez, M. Montes, A. Hierro, R. Gargallo-Caballero, A. Guzmán, E. Muñoz, A.M Teweldeberhan, S.Fahy "Resonant Raman study of local vibrational modes in AlxGa1-xAs1-yNy layers" 13th International Conference on Modulated Semiconductor Structures (MSS-13) Génova (Italia) 15 al 20 de julio de 2007
11: (2007)
S. Lazić, E. Gallardo, J.M. Calleja, J. Miguel-Sánchez, M. Montes, A. Hierro, R. Gargallo-Caballero, A. Guzmán, E. Muñoz, A.M Teweldeberhan, S.Fahy "Resonant Raman study of local vibrational modes in AlxGa1-xAs1-yNy layers" 13th International Conference on Modulated Semiconductor Structures (MSS-13) Génova (Italia) 15 al 20 de julio de 2007
12: (2008)
Electroluminescence analysis of 1.3-1.5 µm InAs quantum dot LEDs with (Ga,In)(N,As) capping layers 35th International Symposium on Compound Semiconductors (ISCS) Friburgo (Alemania), 2008
13: (2008)
Enhancement of N incorporation into (Ga)InAsN quantum dots International Symposium on Compound Semiconductors (ISCS) Friburgo (Alemania), 2008
14: (2008)
The influence of the Ga content on the N incorporation in InAsN and GaInNAs Quantum Dots 7th International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces (ESPS-NIS), Les Arcenaulx, Marseille (Francia), 2008
15: (2009)
A. HIERRO, G. TABARES, J.M. ULLOA, E. MUÑOZ, A. NAKAMURA, T. HAYASHI, J. TEMMYO "Carrier compensation by deep levels in a-plane MgxZn1-xO Schottky photodiodes grown by RPE-MOCVD" Spring European Materials Research Society Conference 2009 Strasburg (France), 2009
16: (2009)
A. HIERRO, G. TABARES, J.M. ULLOA, E. MUÑOZ, A. NAKAMURA, T. HAYASHI, J. TEMMYO "Impact of acceptor states in MgxZn1-xO Schottky photodiodes" Internacional Conference on II-VI Compounds, Saint Petersburg (Russia), 2009
17: (2009)
A. NAKAMURA, T. HAYASHI, J. TEMMYO, A. HIERRO, G. TABARES, J.M.ULLOA, E.MUÑOZ "Schottky barrier contacts formed on polar-, nonporlar-MgxZn1-xO film grown by remote-plasma-enhanced MOCVD" Internacional Conference on II-VI Compounds, San Petersburgo, Rusia, 2009
18: (2009)
G.TABARES, A.HIERRO, J.M.ULLOA, E.MUÑOZ, A. NAKAMURA, T. HAYASHI, J. TEMMYO "Responsivity and transient response of non-polar Au-MgXZn1-xO Schottky photodiodes" Spring European Materials Research Society Conference 2009 Strasburg (France), 2009
19: (2009)
J. MATEOS, S. PÉREZ, R. CUERDO, E. MUÑOZ, F. CALLE, T. GONZÁLEZ "Monte Carlo Simulation of GaN HEMTs: Influence of GaN p-type Doping and High Temperature of Operation" 33rd Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE¿09) Málaga (Spain), 2009
20: (2009)
J.M. ULLOA, M. DEL MORAL, R. GARGALLO, M. MONTES, A. GUZMAN, A. HIERRO, M. BOZKURT, P.M. KOENRAAD "1.3- 1.5 µm GaAsSb-capped InAs quantum dots: effect of the Sb content on the structural and optical properties" 15th European Molacular Beam Epitaxy Workshop Zakopane (Poland), 2009
21: (2009)
J.M. ULLOA, M. DEL MORAL, R. GARGALLO, M. MONTES, A. GUZMAN, A. HIERRO, M. BOZKURT, P.M. KOENRAAD "1.3- 1.5 nm GaAsSb-capped InAs quantum dots: effect of the Sb content on the structural and optical properties" Spring European Materials Research Society Conference 2009 Strasburg (France), 2009
22: (2009)
M. MONTES, A. HIERRO, J. M. ULLOA, A. GUZMÁN, M. AL KHALFIOUI, M. HUGUES, B. DAMILANO, J. MASSIES "1.3-1.5 µm emitting InAs quantum dot LEDs with (Ga, In)(N,As) and Ga(As,Sb) capping layers: a comparison" Spring European Materials Research Society Conference 2009 Strasburg (France), 2009
23: (2009)
M. MONTES, A. HIERRO, J. M. ULLOA, M. AL KHALFIOUI, M. HUGUES, B. DAMILANO, J. MASSIES "InAs/(Ga,In)(N,As) Quantum Dot LEDs Emitting at 1.3-1.5 ìm" 7th Spanish Conference on Electron Devices 2009 Santiago Compostela (Spain), 2009
24: (2009)
R. GARGALLO-CABALLERO, A. GUZMÁN, M. HOPKINSON, A. HIERRO, J. M. ULLOA, E. CALLEJA "Optoelectronic devices based on (Ga,In)(As,N) Quantum dots" 15th European Molacular Beam Epitaxy Workshop Zakopane (Poland), 2009
25: (2010)
A.GUZMÁN FERNÁNDEZ, R. GARGALLO-CABLLERO, MJ. MILLA, JM. ULLOA, A. HIERRO "Low optical degradation in InGaAsN/GaAs Quantum Dot p-i-n structures emitting from 1.1 to 1.55 µm" 16th International MBE Conference Berlín (German), 2010
26: (2010)
A.GUZMÁN FERNÁNDEZ, R. SAN-ROMÁN, A.HIERRO "Laterally biased double quantum well IR detector fabricated by MBE regrowth". 6th International Conference on Molecular Beam Epitaxy Berlín (Germany), 2010
27: (2010)
D.F. REYES, D.L. SALES, R. GARGALLO-CABALLERO, J.M.ULLOA, A. HIERRO, A. GUZMÁN, D. GONZÁLEZ "Efecto de la incorporación de nitrógeno en puntos cuánticos enterrados de in In(Ga)As crecidos sobre GaAs" Congreso Nacional de Materiales, Zaragoza (Spain), 2010
28: (2010)
D.F. REYES, D.L. SALES, R. GARGALLO-CABALLERO, J.M.ULLOA, A. HIERRO, A. GUZMÁN, D. GONZÁLEZ. "Effects of the nitrogen incorporation in the optical and structural characteristics of nitrogen-dilute InAsN QDs" European Materials Research Society Spring Meeting 2010 Strasbourg (France), 2010
29: (2010)
G. TABARES, A. HIERRO, C. DEPARIS, C. MORHAIN, J-M. CHAUVEAU. "Polarization-Sensitive Schottky Photodiodes Based on A-Plane ZnO/ ZnMgO Multiple Quantum-Wells". 52nd Electronic Materials Conference 2010 Indiana (USA), 2010
30: (2010)
J. M. ULLOA, M. DEL MORAL, M. BOZKURT, R. GARGALLO-CABALLERO, A. GUZMÁN, P. M. KOENRAAD, A. HIERRO "GaAsSb-capped InAs quantum dots: from enlarged quantum dot height to alloy fluctuations" Internacional Quantum Dot Conference 2010. Nottinghan (UK), 2010
31: (2010)
J.M. ULLOA, R. GARGALLO-CABALLERO, A. GUZMÁN, A. HIERRO . "GaAsSbN-capped InAs quantum dots for 1.3 - 1.55 µm emission" European Materials Research Society Spring Meeting 2010. Strasbourg (France), 2010
32: (2010)
K. YAMAMOTO, A. HIERRO, E. MUÑOZ, A. NAKAMURA, J. TEMMYO "ZnCdO multiple-quantum-well green LEDs" 6th International Workshop on ZnO and Related Materials Changchun (China), 2010.
33: (2011)
Absorption analysis of GaAsSb-capped InAs/GaAs quantum-dot infrared photodetectors
34: (2011)
Analysis of the modified optical properties of GaAs1-xSbx-capped InAs/GaAs quantum dots
35: (2011)
ANALYSIS OF THE PHOTOLUMINESCENCE OF Zn1-XCdXO NANOWIRES UNDER THERMAL ANNEALING
36: (2011)
Analysis of the photoluminescence of zn1-xcdxo nanowires under thermal annealing
37: (2011)
Evaluation of the In desorption during the capped process in diluted nitride In(Ga)As quantum dots
38: (2011)
Gas sensor based on room temperature optical properties of Surface QDs
39: (2011)
High Level of Mg Alloying Effects on the Deep Level Defects in MgxZn1-xO
40: (2011)
J.M. Ulloa, M. Montes, K. Yamamoto, Z. Gacevic, A. Guzmán, A. Hierro, M. Bozkurt, P.M.Koenraad, D. Fernández, D. González and D. Sales "Tuning the size, strain and band offsets of InAs/GaAs quantum dots through a thin GaAs(Sb)(N) capping layer"
41: (2011)
MBE growth approaches for improving Sb-based In0.5Ga0.5As(Sb)/GaAs QDs
42: (2011)
Mid-infrared photodetectors based on GaAsSb-capped InAs quantum dots
43: (2011)
Modified optical properties of GaAs(Sb)(N)-capped InAs/GaAs quantum dots
44: (2011)
Near infrared high efficiency InAs/GaAsSb QDLEDs: band alignment and carrier recombination mechanisms
45: (2011)
Oxide based UV photodetection using schottky photodiodes
46: (2011)
Processing and adsorption control in ZnO single nanowire photodetectors
47: (2011)
Processing and adsorption control in ZnO single nanowire photodetectors
48: (2011)
Room temperature photoluminescence of InGaAs Surface Quantum Dots
49: (2011)
Size, strain, and band offset engineering in GaAs(Sb)(N)-capped InAs quantum dots for 1.3 - 1.55 µm LEDs and LDs
50: (2011)
Synthesis and characterization of GaAsSb-capped InAs-based QDIPs
51: (2011)
Tuning the size, strain and band offsets of InAs/GaAs quantum dots through a thin GaAs(Sb)(N) capping layer
52: (2011)
ZnMgO-based photodetectors for short wavelength and light polarization detection
53: (2011)
ZnMgO-based photodetectors for short wavelength and light polarization detection
54: (2011)
ZnO/ZnMgO QW Schottky photodiodes sensitive to light polarization
55: (2011)
8th Spanish conference on electron devices
56: (2012)
Broad band structure tunability of InAs/GaAs quantum dots with a thin GaAsSbN capping layer
57: (2012)
Impact of N on the structural properties of GaAsSbN-capped InAs QDs studied by advanced transmission electron microscopy techniques
58: (2012)
Independent tuning of electron and hole confinement in InAs/GaAs quantum dots through a thin GaAsSbN capping layer
59: (2012)
Study of the effect of rapid thermal annealing in high Cd content Zn1-XCdXO nanowires grown by MOCVD
60: (2012)
Time-resolved Photoluminescence spectroscopy of Zn1-XCdXO nanowires
61: (2012)
UV detection with a-ZnO/ZnMgO MQW Schottky and MSM photodetectors on a-ZnO
62: (2013)
Acceptor Levels Probed by DLOS in ZnMgO:N
63: (2013)
High efficient luminescence in type-II GaAsSb-capped InAs quantum dots upon annealing
64: (2013)
Impact of a thin GaAsSb capping layer on the lasing characteristics of InAs/GaAs quantum dot lasers
65: (2013)
Impact of annealing on the Sb and In distribution in GaAsSb-capped InAs quantum dots
66: (2013)
Room temperature luminescence beyond 1.3 ìm from GaAsSbN-capped InAs quantum dots
67: (2013)
Room temperature luminescence beyond 1.3 ìm from GaAsSbN-capped InAs quantum dots
68: (2014)
Deep and shallow traps in ZnMgO:N
69: (2014)
Deep Level Analysis of Homoepitaxial ZnO Doped with N
70: (2014)
Lattice Structural Effects on Native Point Defect Densities and Energies across MgZnO Alloys
71: (2014)
Light Polarization Sensitive Photodetectors with Non-Polar and Semi-Polar Homoepitaxial ZnO/ZnMgO MQWs
72: (2014)
Morphological and Structural Characterization of MgxZn1-xO?, 8th International Workshop on Zinc Oxide and Related Materials
73: (2014)
Optical Properties of ZnMgO Grown by Spray Pyrolysis and Development of MSM Photodetectors for the UV
74: (2014)
Stacked GaAsSbN-capped InAs/GaAs quantum dots for enhanced solar cell efficiency
75: (2014)
ZnCdO/ZnO Multiple Quantum Well Nanowires Emitting in the Visible
76: (2015)
Analysis of Sb and In distribution in GaAsSb-capped InAs quantum dots by advance transmission electron microscopy
77: (2015)
Capping layer growth rate and the optical and structural properties of GaAsSbN-capped InAs/GaAs quantum dots
78: (2015)
Deep levels in homoepitaxial ZnO and the effect of N doping
79: (2015)
GaAs(Sb)(N)-caped InAs/GaAs Quantum Dots for enhanced solar cell efficiency
80: (2015)
Stacked GaAs(Sb)(N)-capped InAs/GaAs quantum dots for enhanced solar cell effiiency
81: (2015)
Type-I and Type-II InAs/GaAs Quantum Dot solar cells with a GaAsSb capping layer
82: (2016)
Análisis de la interdifusión en superredes de GaNAsSb para aplicaciones en celdas solares de multiunión
83: (2016)
Analysis of capping with GaAsSbN thin layers in (un)coupled InAs/GaAs multi quantum dot layers for enhanced solar cells
84: (2016)
Analysis of capping with GaAsSbN thin layers in (un)coupled InAs/GaAs multi quantum dot layers for enhanced solar cells
85: (2016)
Analysis of the Sb and N distribution in GaAsSb/GaAsN superlattices for solar cell applications
86: (2016)
Analysis of the Sb and N distribution in GaAsSb/GaAsN superlattices for solar cell applications
87: (2016)
Deep level analysis of non-polar and semipolar homoepitaxial ZnO
88: (2016)
Deep level spectroscopy in metal-insulator-semiconductor structures
89: (2016)
Infrared intersubband absorption from non-polar homoepitaxial m-ZnO/ZnMgO MQWs
90: (2016)
Non polar ZnO/(Zn,Mg)O homoepitaxial heterostructures for intersubband devices
91: (2016)
Non polar ZnO/(Zn,Mg)O multiple quantum wells for intersubband devices grown on ZnO bulk substrates
92: (2016)
Role of the wetting layer in the performance of quantum dot solar cells
93: (2016)
Role of the wetting layer in the performance of quantum dot solar cells
94: (2016)
Strain-balanced GaAsSb-GaAsN Type-II superlattices as 1 eV layer for efficient multi-junction solar cells
95: (2016)
Strain-balanced Type-II GaAsSb/GaAsN Superlattices as 1 eV layer for Efficient Multi-junction Solar Cells
96: (2016)
Strain-balanced Type-II GaAsSb/GaAsN Superlattices as 1 eV layer for Efficient Multi-junction Solar Cells
97: (2016)
Strain-balanced type-II GaAsSb/GaAsN superlattices as 1 eV layer for efficient multi-junction solar cells
98: (2016)
Strain-balanced type-II GaAsSb/GaAsN superlattices as 1 eV layer for efficient multi-junction solar cells
99: (2016)
Strain-balanced Type-II GaAsSb/GaAsN Superlattices for Efficient Multi-junction Solar Cells
100: (2016)
Strain-balanced Type-II GaAsSb/GaAsN Superlattices for Efficient Multi-junction Solar Cells
101: (2016)
Strain-balanced type-II GaAsSb/GaAsN superlattices for efficient multi-junction solar cells
102: (2016)
Strain-balanced type-II GaAsSb/GaAsN superlattices for efficient multi-junction solar cells
103: (2016)
Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells
104: (2016)
Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells
105: (2017)
Electrical and transport characteristics of non-polar m-plane Ga:MgxZn1-xO
106: (2017)
Intersubband spectroscopy of ZnO/ZnMgO quantum wells grown on m-plane ZnO substrates for quantum cascade device applications
107: (2017)
Intersubband Transitions and Polarons in (Zn,Mg)O/ZnO Quantum Wells
108: (2017)
Strain-balanced type-II GaAsSb/GaAsN superlattices for efficient multi-junction solar cells
109: (2018)
Bandgap energy and electrical properties of cubic Cd1-xZnxO
110: (2018)
Effect of GaAs(Sb)(N) capping layers on (un)coupled In/GaAs multi quantum dot layers for enhanced solar cells
111: (2018)
Homoepitaxy on non-polar ZnO/(Zn,Mg)O multi-quantum wells: from a precise growth to the observation of intersubband transitions
112: (2018)
Interfacial phonon resonances in ZnO/MgZnO quantum wells : a compositional calibration tool
113: (2018)
Interplay between carrier lifetime, electronic coupling, and extraction efficency
114: (2018)
Strain-balanced ype-II superlattices for efficient multi-junction solar cells
115: (2018)
Type-II GaAsSb/GaAsN superlattice solar cells
116: (2019)
Double-interface surface plasmon modes in CdZnO thin films and their hybridization with phonons
117: (2019)
Effect of capping rate on InAs/GaAs quantum dot solar cells
118: (2019)
Improving the efficiency of InAs/GaAs quantum dot solar cells by engineering the wetting layer
119: (2019)
Improving the efficiency of InAs/GaAs quantum dot solar cells by engineering the wetting layer
120: (2019)
Intersubband absorption at normal incidence by m-plane ZnO/MgZnO Quantum Wells
121: (2019)
Intersubband plasmons induced negative refraction at mid-IR frequency in heterostructured semiconductor metamaterials
122: (2019)
Intersubband plasmons induced negative refraction at mid-IR frequency in heterostructured semiconductor metamaterials
123: (2019)
Rock-salt CdZnO for IR plasmonics
124: (2019)
Short infrared wavelength quantum cascade detectors based on non-polar ZnO/ZnMgO quantum wells
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S2i 2023 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNPACTO (IPT-020000-2010-22)
