Observatorio de I+D+i UPM
• ESPAÑOL
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INVESTIGADORES
ESTRUCTURAS DE I+D+I
ACTIVIDAD INVESTIGADORA
INNOVACIÓN
Investigador
Alvaro de Guzman Fernandez Gonzalez
Categoría Investigador
CATEDRATICO UNIVERSIDAD
Escuela UPM
E.T.S. DE INGENIEROS DE TELECOMUNICACION
Departamento:
INGENIERÍA ELECTRÓNICA
Centros/Institutos I+D+i
INST.SIST.OPTOELECT. MICROTECNOL. "ISOM"
Area Conocimiento
TECNOLOGIA ELECTRONICA
Grupo de Investigación:
Grupo de Dispositivos Semiconductores del ISOM
Email (Directorio UPM)
alvarodeguzman.fernandez
upm.es
Teléfono (Directorio UPM)
910672118
Datos de Memorias relacionados
Proyectos de I+D+i y generación de recursos
48 Proyectos de I+D+i
1: (2007)
"Asistencia técnica para el control y caracterización de las matrices tricolor del demostrador SIRIO"PROGRAMA DN8644: COINCIDENTE SIRIO (2006-2007. CIDA- Univ. Politécnica
2: (2007)
"Ayudas para apoyar las líneas de I+D en el programa de creación y consolidación de grupos de investigación de la Universidad Politécnica de Madrid. CAM, Referencia: CCG07-UPM/000-3220"
3: (2007)
"Desarrollo de láseres horizontales y de cavidad vertical para la banda de 1.35 a 1.55 micras basados en pozos cuánticos de GaInNAs/GaAs" Min. Educación y Ciencia, TEC2005-03694/MIC (2005-2008).
4: (2007)
"Desarrollo matriz de detectores multiespectral en el infrarrojo 3-5 micras"FIT-330101-2007-11 (2007-2009)
5: (2007)
"Microscopio de barrido de capacidad para caracterización de nanoestructuras". Min. Educación y Ciencia, UNPM06-33-037 (2007)
6: (2007)
"Nanoestructuras de Semiconductores como Componentes para la Información Cuántica (NANIC)" Min. Educación y Ciencia, Acción Estratégica en Nanotecnología. NAN2004-09109-C04-02. (2005-2008).
7: (2007)
"Nanoestructuras de Semiconductores como Componentes para la Información Cuántica (NANIC)" Min. Educación y Ciencia, Acción Estratégica en Nanotecnología. NAN2004-09109-C04-02. (2005-2008).
8: (2007)
"Nanoestructuras de semiconductores como componentes para la información cuántica"(NANOCOMIC)
9: (2007)
"Sistema de caracterización óptica avanzada multifuncional"
10: (2007)
"14th European Workshop on MBE, Sierra Nevada, Granada, ESPAÑA" Min. Educación y Ciencia, ACC-030000-2007-3 (2007)
11: (2007)
"14th European Workshop on MBE, Sierra Nevada, Granada, ESPAÑA" Ministerio de Educación y Ciencia.TEC2007-30322-E/ (2007)
12: (2007)
"14th European Workshop on MBE, Sierra Nevada, Granada, ESPAÑA.ISOM-UPM
13: (2008)
Asistencia técnica para el control y caracterización de las matrices tricolor del demostrador SIRIO
14: (2008)
Asistencia técnica para la optimización de la tecnología de detectores Qwip tricolor para la banda de 3 a 5 micras
15: (2008)
Ayudas financieras para la mejora de las infraestructuras científicas y tecnológicas singulares y para el acceso a las mismas
16: (2008)
Ayudas para apoyar las líneas de I+D en el programa de creación y consolidación de grupos de investigación de la UPM. (Resolución de 19 de junio de 2007)
17: (2008)
Caracterización de la matriz de detectores QWIP Tricolor
18: (2008)
Desarrollo de láseres horizontales y de cavidad vertical para la banda de 1.35 a 1.55 micras basados en pozos cuánticos de GaInNAs/GaAs
19: (2008)
Desarrollo de matrices de detectores QWIP tri-color
20: (2008)
Desarrollo matriz de detectores multiespectral en el infrarrojo 3-5
21: (2008)
Nano y microdispositivos basados en ZnO para la detección de H2 y UV (THINKOXIDE)
22: (2008)
Nanoestructuras de semiconductores como componentes para la información cuántica
23: (2008)
Programa de infraestructura y gestión de calidad de la red de laboratorios incluido en el Contrato-Programa de I+D entre la CAM y la UPM
24: (2008)
Programa de infraestructura y gestión de calidad de la red de laboratorios incluido en el Contrato-Programa de I+D entre la CAM y la UPM
25: (2008)
14th European Molecular Beam Epìtaxy. Acción complementaria TEC2007-30322-E/
26: (2009)
ASISTENCIA TECNICA PARA CONTRL Y CARACTERIZACIÓN DE LAS MATRICES DEL DEMOSTRADOR SIRIO.
27: (2009)
ASISTENCIA TECNICA PARA LA OPTIMIZACION DE LA TENOLOGIA DE DETECTORES QWIP TRICOLOR PARA LA BANDA DE 3 A 5 MICRAS
28: (2009)
Caracterización de la matriz de detectores qwip tricolor
29: (2009)
DESARROLLO DE DETECTORES OWIP
30: (2009)
DESARROLLO DE MATRICES DE DETECTORES QWIP TRICOLOR
31: (2009)
DESARROLLO MATRIZ DE DETECTORES MULTIESPECTRAL EN EL INFRARROJO 3-5
32: (2009)
MBE REGROWTH OF A LATERALLY-BIASED DOUBLE QUANTUM WELL TUNABLE DETECTOR.
33: (2010)
DESARROLLO MATRIZ DE DETECTORES MULTIESPECTRAL EN EL INFRARROJO 3-5
34: (2010)
MBE REGROWTH OF A LATERALLY-BIASED DOUBLE QUANTUM WELL TUNABLE DETECTOR.
35: (2011)
MBE REGROWTH OF A LATERALLY-BIASED DOUBLE QUANTUM WELL TUNABLE DETECTOR.
36: (2011)
SMASH: Smart nanostructured semiconductors for energy saving light solutions
37: (2012)
MBE REGROWTH OF A LATERALLY-BIASED DOUBLE QUANTUM WELL TUNABLE DETECTOR.
38: (2012)
Sistema de Aterrizaje de precisión para aviones no tripulados (SAPANT)
39: (2012)
Sistema de Aterrizaje de precisión para aviones no tripulados (SAPANT)
40: (2013)
Laterally biased Quantum IR detectors
41: (2013)
MBE REGROWTH OF A LATERALLY-BIASED DOUBLE QUANTUM WELL TUNABLE DETECTOR.
42: (2013)
SISTEMA DE ATERRRIZAJE PARA AVIONES NO TRIPULADOS (SAPANT)
43: (2014)
SISTEMA DE ATERRRIZAJE PARA AVIONES NO TRIPULADOS (SAPANT)
44: (2015)
FESEM: Extension de medida de catodoluminiscencia (cl) al rango infrarojo en microscopio de barrido electrónico FESEM
45: (2015)
FESEM: Extensión de medida de catodoluminiscencia(CL) al rango infrarrojo en microcospio de barrido electrónico FESEM
46: (2015)
NANODILNIT: Aleaciones emergentes de nitruros diluidos III-V y nanoestructuras relacionadas para aplicaciones fotovoltaicas y de fotodetección de alta eficiencia
47: (2015)
Zoterac: Zinc Oxide For TeraHertz Cascade Devices
48: (2016)
NanoSb-GBSC: Nuevas nanoestructuras basadas en Sb para aplicaciones fotovoltaicas de alta eficiencia
Formación de Investigadores y Movilidad
6 Estancias y sabáticos recogidos en programas oficiales
1: (2007)
Estancia de la Doctorando Doña Raquel Gargallo Caballero, en la University of Sheffield, Department of Electronic and Electrical Engineering, III/V Facility of the EPSRC National Center for III-V Technologies, Sheffield (Reino Unido), para Crecimiento mediante Epitaxia por Haces Moleculares (MBE) de nanoestructuras de punto cuántico para su aplicación en detectores de infrarrojo, duración de la estancia 3 meses del 29/05/2007 al 31/08/2007.
2: (2007)
Estancia del Profesor Titular de Universidad, Dr. D. ALVARO DE GUZMÁN FERNÁNDEZ GONZÁLEZ Octubre de 2007: estancia durante 6 meses en el Paul Drude Institut (PDI) de Berlín. Motivo: Crecimiento por MBE de aleaciones de InGaAsN con antimonio (Sb).
3: (2008)
ESTANCIA DEL DR. JOSE MARÍA ULLOA HERRERO, CENTRO: Technical University Eindhoven LOCALIDAD: Eindhoven PAÍS: Países Bajos AÑO: 2008 DURACIÓN: 5 meses TEMA: Estudio de las propiedades estructurales de nanostructuras semiconductoras cero-dimensionales
4: (2012)
ESTANCIA INVESTIGADORA DEL PROF. ALVARO DE GUZMAN FERNANDEZ GONZÁLEZ.- Estudio mediante catodoluminiscencia de muestras de puntos cuánticos superficiales.
5: (2012)
Estudio mediante catodoluminiscencia de muestras de puntos cuánticos superficiales.
6: (2016)
Estancia del Dr. Alvaro de Guzmán Fernández González
2 Tesis Doctorales
1: (2010)
RAQUEL GARGALLO CABALLERO "Desarrollo de dispositivos optoelectrónicos mediante crecimiento por MBE y caracterización de nanoestructuras de punto cuántico basadas en (Ga,In)(As,N)". Director Alvaro de Guzmán Fernández, Sobresaliente cum laude.
2: (2015)
Surface InGaAs nanostructures for sensing applications
Difusión de Resultados de Investigación
66 Artículos en revistas
1: (2007)
J. MIGUEL-SÁNCHEZ, A. GUZMÁN, U. JAHN, A. TRAMPERT, J. M. ULLOA, E. MUÑOZ, A. HIERRO "Role of ionized nitrogen species in the optical and structural properties of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy"Journal of Applied Physics, 101,1035261-10352616 (2007) ISSN: 0021-8979
2: (2008)
Analysis of the characteristic temperatures of (Ga,In)(N,As)/GaAs laser diodes
3: (2008)
Impact of carrier localization on the photoluminescence characteristics of (Ga,In)(N,As) and (Ga,In)(N,As,Sb) quantum wells
4: (2008)
Local vibration modes and nitrogen incorporation in AlGaAs: N layers
5: (2008)
Resonant Raman study of local vibrational modes in AlGaAsN layers
6: (2008)
Resonant Raman-active localized vibrational modes in AlyGa{1-y}NxAs{1-x} alloys: Experiment and firstprinciples calculations
7: (2008)
The effect of rapid thermal annealing on the photoluminescence of InAsN/InGaAs dot-in-a-well structures
8: (2008)
The effect of the individual species of the N plasma on the characteristics of InAsN quantum dots grown by MBE
9: (2008)
Vertical composition fluctuations in (Ga,In)(N,As) quantum wells grown on vicinal (1 1 1)B GaAs
10: (2009)
A. GUZMÁN, E. LUNA, F. ISHIKAWA, A. TRAMPERT "The role of Sb and N ions on the morphology and localization of (Ga,In) (N,As) quantum wells" Journal of Crystal Growth, 311, 1728-1732 (2009)
11: (2009)
M. MONTES, A. HIERRO, J. M. ULLOA, A. GUZMÁN, M. AL KHALFIOUI, M. HUGUES, B. DAMILANO, J. MASSIES "Electroluminescence analysis of 1.3-1.5 µm InAs quantum dot LEDs with (Ga,In)(N,As) capping layers" Physical Status Solidi (c), 6, 6, 1424-1427 (2009)
12: (2009)
R. GARGALLO-CABALLERO, Á.GUZMÁN, M. HOPKINSON, J. M. ULLOA, A. HIERRO, E. CALLEJA "Dependence of N incorporation into (Ga)InAsN QDs on Ga content probed by rapid thermal annealing" Physica status solidi (c), 6,6, 1441-1444 (2009)
13: (2010)
G. TABARES, A. HIERRO, J.M. ULLOA, A. GUZMAN, E. MUÑOZ, A. NAKAMURA, T. HAYASHI, J. TEMMYO "High responsivity and internal gain mechanisms in Au-ZnMgO Schottky photodiodes" Applied Physics Letters 96, 101112/1-101112/3, 2010.
14: (2010)
J.M. ULLOA, R. GARGALLO-CABALLERO, M. BOZKURT, M. DEL MORAL, P. M. KOENRAAD, A. GUZMAN, A. HIERRO ''GaAsSb-capped InAs quantum dots: from enlarged quantum dot height to alloy fluctuations'' Physical Review B, 81, 165305 (2010)
15: (2010)
M. MONTES, A. GUZMAN, A. TRAMPERT, A. HIERRO, "1.3 µm emitting GaInNAs/GaAs quantum well resonant cavity LEDs", Solid-State Electronics 54, 492-496, 2010.
16: (2010)
M. MONTES, A. HIERRO, J. M. ULLOA, A. GUZMÁN, M. AL KHALFIOUI, M. HUGUES, B. DAMILANO, J. MASSIES "External efficiency and carrier loss mechanisms in InAs/GaInNAs quantum dot light emitting diodes". Journal of Applied Physics 108, 033104/1-033104/8, 2010.
17: (2010)
M. MONTES, A. HIERRO, J. M ULLOA, J. MIGUEL-SÁNCHEZ, A. GUZMÁN, B. DAMILANO, M. HUGUES, M. AL KHALFIOUI, J.-Y. DUBOZ, J. MASSIES, "Current spreading efficiency and Fermi level pinning in GaInNAs/GaAs quantum well laser diodes" IEEE Journal of Quantum Electronics 46, 1058-1065, 2010.
18: (2011)
Inhibition of In desorption in diluted nitride InAsN quantum dots
19: (2011)
Metamorphic In0.20Ga0.80As p-i-n photodetectors grown on GaAs substrates for near infrared applications
20: (2011)
Near Infrared InAs/GaAsSb Quantum Dot Light Emitting Diodes
21: (2011)
Room temperature absorption in laterally biased Quantum Infrared Detectors fabricated by MBE regrowth
22: (2012)
Critical Role of Two-Dimensional Island-Mediated Growth on the Formation of Semiconductor Heterointerfaces
23: (2012)
High optical sensitivity to ambient conditions of uncapped InGaAs surface quantum dots
24: (2012)
Impact of the Ga/In ratio on the N incorporation into (In,Ga)(As,N) quantum dots
25: (2012)
Independent tuning of electron and hole confinement in InAs/GaAs quantum dots through a thin GaAsSbN capping layer
26: (2012)
Kinetic Monte Carlo simulations and cross-sectional scanning tunneling microscopy as tools to investigate the heteroepitaxial capping of self-assembled quantum dots
27: (2012)
PREPARING MECHANICAL ENGINEERING STUDENTS FOR PRODUCT DESIGN PROFESSIONAL PRACTICE THROUGH PBL: PLANNING AND EXECUTION OF THE SUBJECT "PRODUCT DESIGN METHODOLOGY"
28: (2013)
Dependence of Surface InGaAs Quantum Dot Luminescence on the Molecular Properties of the Environment
29: (2013)
Dependence of Surface InGaAs Quantum Dot Luminescence on the Molecular Properties of the Environment
30: (2013)
Electrical characterization of Schottky contacts to n-MgZnO films
31: (2013)
Electrical characterization of Schottky contacts to n-MgZnO films
32: (2013)
Impact of the Sb content on the performance of GaAsSb-capped InAs/GaAs quantum dot lasers
33: (2013)
Impact of the Sb content on the performance of GaAsSb-capped InAs/GaAs quantum dot lasers
34: (2014)
Capping layer growth rate and the optical and structural properties of GaAsSbN-capped InAs/GaAs quantum dots
35: (2014)
GaAsSb/GaAsN short-period superlattices as a capping layer for improved InAs quantum dot-based optoelectronics
36: (2014)
Long-wavelength room-temperature luminescence from InAs/GaAs quantum dots with an optimized GaAsSbN capping layer
37: (2014)
Photoexcited-induced sensitivity of InGaAs surface QDs to environment
38: (2014)
Photoexcited-induced sensitivity of InGaAs surface QDs to environment
39: (2014)
Photoexcited-induced sensitivity of InGaAs surface QDs to environment
40: (2014)
Strong Influence of the Humidity on the Electrical Properties of InGaAs Surface Quantum Dots
41: (2014)
Strong Influence of the Humidity on the Electrical Properties of InGaAs Surface Quantum Dots
42: (2015)
Effect of annealing in the Sb and In distribution of type II GaAsSb-capped InAs quantum dots
43: (2015)
High sensitivity to environment of InGaAs surface nanostructures
44: (2015)
Role of the wetting layer in the enhanced responsivity of InAs/GaAsSb quantum dot infrared photodetectors
45: (2015)
Stacked GaAs(Sb)(N)-capped InAs/GaAs quantum dots for enhanced solar cell efficiency
46: (2015)
Type II InAs/GaAsSb quantum dots: Highly tunable exciton geometry and topology
47: (2016)
General route for the decomposition of InAs quantum dots during the capping process
48: (2016)
General route for the decomposition of InAs quantum dots during the capping process
49: (2016)
Impact of alloyed capping layers on the performance of In As quantum dot solar cells
50: (2016)
Influence of Sb/N contents during the capping process on the morphology of InAs/GaAs quantum dots
51: (2016)
Influence of Sb/N contents during the capping process on the morphology of InAs/GaAs quantum dots
52: (2016)
Mixed Effects of the Atomic Arrangement and Surface Chemistry on the Electrodeposition of Bi Thin Films on n-GaAs Substrates
53: (2016)
Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells
54: (2017)
Laterally biased structures for room temperature operation of quantum-well infrared photodetectors
55: (2017)
Quantitative analysis of the interplay between InAs quantum dots and wetting layer during the GaAs capping process
56: (2017)
Scanning tunneling spectroscopic monitoring of surface states role on water passivation of InGaAs uncapped quantum dots
57: (2017)
Strain-balanced type-II superlattices for efficient multi-junction solar cells
58: (2017)
Strain-balanced type-II superlattices for efficient multi-junction solar cells
59: (2017)
Strain-balanced type-II superlattices for efficient multi-junction solar cells
60: (2017)
Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells
61: (2018)
Laterally Biased Quantum-Well Infrared Photodetectors Operating at Room Temperature With Low Dark Currents
62: (2018)
Size and shape tunability of self-assembled InAs/GaAs nanostructures through the capping rate
63: (2018)
Type-II GaAsSb/GaAsN superlattice solar cells
64: (2018)
Type-II GaAsSb/GaAsN superlattice solar cells
65: (2019)
Open circuit voltage recovery in GaAsSbN-based solar cells: Role of deep N-related radiative states
66: (2019)
Simple method to generate calibrated synthetic smoke-like atmospheres at microscopic scale
5 Capítulos de libros
1: (2007)
A. HIERRO, J.M. ULLOA, J. MIGUEL-SÁNCHEZ, A. GUZMÁN, A. TRAMPERT, E. TOURNIE "Photo- and Electro-luminescence from GaInNAs/GaAs single quantum wells and light emitting diodes" Nitrides and Dilute Nitrides: Growth, Physics and Devices 2007, 77-98. ISBN 978-81-7895-250-5.
2: (2007)
A. HIERRO, J.M. ULLOA, J. MIGUEL-SÁNCHEZ, A. GUZMÁN, A. TRAMPERT, E. TOURNIE "Photo- and Electro-luminescence from GaInNAs/GaAs single quantum wells and light emitting diodes" Nitrides and Dilute Nitrides: Growth, Physics and Devices 2007, 77-98. ISBN 978-81-7895-250-5.
3: (2008)
Impact of Nitrogen Ion Density on the Optical and Structural Properties of MBE Growh GaInAs/GaAs (100) and (111)B Quantum Wells
4: (2008)
Photo- and Electro-luminescence from GaInNAs/GaAs single quantum wells and light emitting diodes
5: (2017)
The Impact of Alloyed Capping Layers on the Performance of InAs/GaAs Quantum Dot Solar Cells
9 Conferencias invitadas en congresos
1: (2007)
Á. Guzmán, E. Luna, J. Hernando, E. Muñoz "Quantum Well Infrared Photodetectors (QWIP), Basics and current activities at UPM University" 19th NATO/RTO Sensors and Electronics Technology Panel Business Meeting Toledo (España) 9 al 9 de octubre de 2007.
2: (2008)
Multicolor absorption using Quantum Well Infrared Photodetectors based on dilute nitrides
3: (2011)
New approaches for room temperatura operation of quantum infrared photodetectors
4: (2013)
GaAsSb(N)-capped InAs quantum dots: from atomic scale characterization to improved devices
5: (2015)
High sensitivity to environment of InGaAs surface nanostructures
6: (2015)
High sensitivity to environment of InGaAs surface nanostructures
7: (2015)
Modified InAs/GaAs quantum dots for enhanced solar cell efficiency
8: (2017)
High temperature photoresponse of double Quantum-Well Infrared Photodetectors using laterally biased structures
9: (2017)
Strain-balanced type-II superlattices for efficient multi-junction solar cells
5 Cursos, seminarios y tutoriales
1: (2010)
Professor MUTSUKO HATANO.- Tutorial de colaboración con Dr. Kenji Yamamoto
2: (2011)
Optoelectronic devices based on oxide and arsenide compound semiconductors. Dr. Kenji Yamamoto
3: (2011)
Spectroscopy of droplet epitaxial GaAs nanoemitters, Dr Marco Abbarchi
4: (2014)
Future of multifunctional nanocrystalline ZnO
5: (2015)
Surface InGaAs nanostructures for sensing applications
2 Otras Publicaciones
1: (2016)
Analysis of capping with GaAsSbN thin layers in (un)coupled InAs/GaAs multi quantum dot layers for enhanced solar cells
2: (2016)
Analysis of the Sb and N distribution in GaAsSb/GaAsN superlattices for solar cell applications
80 Ponencia en Congresos
1: (2007)
Á. Guzmán, E. Luna, J. Hernando, E. Muñoz "Quantum Well Infrared Photodetectors (QWIP), Basics and current activities at UPM University" 19th NATO/RTO Sensors and Electronics Technology Panel Business Meeting Toledo (España) 9 al 9 de octubre de 2007.
2: (2007)
Á. Guzmán, F. Ishikawa, A. Trampert, K.H. Ploog "Effect Of Sb On The Optical Properties Of Gainnas And Gainnassb Quantum Wells Grown By Mbe" 14th European Molecular Beam Epitaxy Workshop 2007 Sierra Nevada, Granada (ESPAÑA) 5 al 7 de marzo de 2007
3: (2007)
E. Gallardo, S. Lazic, J. M. Calleja, J. Miguel-Sánchez, M. Montes, A. Hierro, R. Gargallo-Caballero, A. Guzmán, A.M. Teweldeberhan, S. Fahy "Local vibration modes and nitrogen incorporation in AlGaAs:N layers" 7th International Conference on Nitride Semiconductors (ICNS07) Las Vegas (Nevada, USA) 16 al 21 de septiembre de 2007
4: (2007)
J. Miguel-Sánchez, M. Hopkinson, Á. Guzmán, R. Gargallo-Caballero, E. Muñoz. "(In)Gaas(N) On Gaas (100) And (111)B Grown In A Low Pressure N2 Environment" 14th European Molecular Beam Epitaxy Workshop 2007 Sierra Nevada, Granada (ESPAÑA) 5 al 7 de marzo de 2007
5: (2007)
J. Miguel-Sánchez, M. Montes, A. Hierro, R. Gargallo-Caballero, A. Guzmán, E. Muñoz, S. Lazic, E. Gallardo, J. M. Calleja "Growth And Characterization Of Algaas(N) On Gaas" 14th European Molecular Beam Epitaxy Workshop 2007 Sierra Nevada, Granada (ESPAÑA) 5 al 7 de marzo de 2007
6: (2007)
J. Miguel-Sánchez, M. Montes, A. Hierro, R. Gargallo-Caballero, A. Guzmán, E. Muñoz, S. Lazic, E. Gallardo, J. M. Calleja "Growth And Characterization Of Algaas(N) On Gaas" 14th European Molecular Beam Epitaxy Workshop 2007 Sierra Nevada, Granada (ESPAÑA) 5 al 7 de marzo de 2007
7: (2007)
R. Gargallo-Caballero, A.Guzmán, J. Miguel-Sánchez, A. Hierro, E.Muñoz. "Analysis of gain spectra and Fermi level pinning of GaInNAs/GaAs quantum well lasers with 0 to 3.3% N content" European Materials Research Society Meeting (E-MRS) 2007 Estrasburgo (Francia) 28 de mayo al 1 Junio de 2007
8: (2007)
R. Gargallo-Caballero, A.Guzmán, J. Miguel-Sánchez, A. Hierro, E.Muñoz "Analysis Of Gain Spectra And Fermi Level Pinning Of Gainnas/Gaas Quantum Well Lasers With 0 To 3.3% N Content" European Materials Research Society Meeting (E-MRS) 2007 Estrasburgo (Francia) 28 de mayo al 1 Junio de 2007
9: (2007)
R. Gargallo-Caballero, Á.Guzmán, J. Miguel-Sánchez, A. Hierro. "Role Of N Plasma Species On The Morphology And Luminescence Of InAsN Quantum Dots Grown By Mbe" European Materials Research Society Meeting (E-MRS) 2007 Estrasbourg (Francia) 28 de mayo al 1 Junio de 2007
10: (2007)
R. Gargallo-Caballero, Á.Guzmán, J. Miguel-Sánchez, A. Hierro. "Role Of N Plasma Species On The Morphology And Luminescence Of Inasn Quantum Dots Grown By Mbe" European Materials Research Society Meeting (E-MRS) 2007 Estrasbourg (Francia) 28 de mayo al 1 Junio de 2007
11: (2007)
R. Gargallo-Caballero, J. Miguel-Sánchez, Á. Guzmán, A. Hierro, E. Muñoz. "Structural and optical study of InAsN quantum dots grown on GaAs(100) and buried with different materials" 14th European Molecular Beam Epitaxy Workshop 2007 Sierra Nevada, Granada (ESPAÑA) 5 al 7 de marzo de 2007
12: (2007)
R. Gargallo-Caballero, M. Sanz, Á. Guzmán, E. Calleja, E. Muñoz "Quantum Dot Infrared Photodetector for mid-infrared detection at high temperatures".6th Spanish Conference on Electronic Devices CDE-07 El Escorial, Madrid (España) 31 de enero al 2 de febrero de 2007
13: (2007)
R. Gargallo-Caballero, M. Sanz, Á. Guzmán, E. Calleja, E. Muñoz "Quantum Dot Infrared Photodetector for mid-infrared detection at high temperatures"6th Spanish Conference on Electronic Devices CDE-07 El Escorial, Madrid (España) 31 de enero al 2 de febrero de 2007
14: (2007)
R. Gargallo-Caballero, M.Sanz, Á.Guzmán, E.Calleja, E.Muñoz "High Temperature Multiquantum Dot Infrared Photodetectors Using InAs Self-Assembled Quantum Dots" 6th Spanish Conference on Electronic Devices CDE-07. El Escorial, Madrid (España) 31 de enero al 2 de febrero de 2007
15: (2007)
S. Lazic, E. Gallardo, J.M. Calleja, J. Miguel-Sánchez, M. Montes, A. Hierro, R. Gargallo-Caballero, A. Guzmán, E. Muñoz, A.M Teweldeberhan, S.Fahy "Resonant Raman study of local vibrational modes in AlxGa1-xAs1-yNy layers" 13th International Conference on Modulated Semiconductor Structures (MSS-13) Génova (Italia) 15 al 20 de julio de 2007
16: (2007)
S. Lazić, E. Gallardo, J.M. Calleja, J. Miguel-Sánchez, M. Montes, A. Hierro, R. Gargallo-Caballero, A. Guzmán, E. Muñoz, A.M Teweldeberhan, S.Fahy "Resonant Raman study of local vibrational modes in AlxGa1-xAs1-yNy layers" 13th International Conference on Modulated Semiconductor Structures (MSS-13) Génova (Italia) 15 al 20 de julio de 2007
17: (2008)
Electroluminescence analysis of 1.3-1.5 µm InAs quantum dot LEDs with (Ga,In)(N,As) capping layers 35th International Symposium on Compound Semiconductors (ISCS) Friburgo (Alemania), 2008
18: (2008)
Enhancement of N incorporation into (Ga)InAsN quantum dots International Symposium on Compound Semiconductors (ISCS) Friburgo (Alemania), 2008
19: (2008)
The effect of ions and Sb on the carrier localization in GaInNAs quantum wells 15th International Conference on Molecular Beam Epitaxy Vancouver (Canada), 2008
20: (2008)
The influence of Ga composition of GaInAsN QDs on N incorporation.
21: (2008)
The influence of the Ga content on the N incorporation in InAsN and GaInNAs Quantum Dots 7th International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces (ESPS-NIS), Les Arcenaulx, Marseille (Francia), 2008
22: (2009)
J.M. ULLOA, M. DEL MORAL, R. GARGALLO, M. MONTES, A. GUZMAN, A. HIERRO, M. BOZKURT, P.M. KOENRAAD "1.3- 1.5 µm GaAsSb-capped InAs quantum dots: effect of the Sb content on the structural and optical properties" 15th European Molacular Beam Epitaxy Workshop Zakopane (Poland), 2009
23: (2009)
J.M. ULLOA, M. DEL MORAL, R. GARGALLO, M. MONTES, A. GUZMAN, A. HIERRO, M. BOZKURT, P.M. KOENRAAD "1.3- 1.5 nm GaAsSb-capped InAs quantum dots: effect of the Sb content on the structural and optical properties" Spring European Materials Research Society Conference 2009 Strasburg (France), 2009
24: (2009)
M. MONTES, A. HIERRO, J. M. ULLOA, A. GUZMÁN, M. AL KHALFIOUI, M. HUGUES, B. DAMILANO, J. MASSIES "1.3-1.5 µm emitting InAs quantum dot LEDs with (Ga, In)(N,As) and Ga(As,Sb) capping layers: a comparison" Spring European Materials Research Society Conference 2009 Strasburg (France), 2009
25: (2010)
A.GUZMÁN FERNÁNDEZ, R. GARGALLO-CABLLERO, MJ. MILLA, JM. ULLOA, A. HIERRO "Low optical degradation in InGaAsN/GaAs Quantum Dot p-i-n structures emitting from 1.1 to 1.55 µm" 16th International MBE Conference Berlín (German), 2010
26: (2010)
A.GUZMÁN FERNÁNDEZ, R. SAN-ROMÁN, A.HIERRO "Laterally biased double quantum well IR detector fabricated by MBE regrowth". 6th International Conference on Molecular Beam Epitaxy Berlín (Germany), 2010
27: (2010)
D.F. REYES, D.L. SALES, R. GARGALLO-CABALLERO, J.M.ULLOA, A. HIERRO, A. GUZMÁN, D. GONZÁLEZ "Efecto de la incorporación de nitrógeno en puntos cuánticos enterrados de in In(Ga)As crecidos sobre GaAs" Congreso Nacional de Materiales, Zaragoza (Spain), 2010
28: (2010)
D.F. REYES, D.L. SALES, R. GARGALLO-CABALLERO, J.M.ULLOA, A. HIERRO, A. GUZMÁN, D. GONZÁLEZ. "Effects of the nitrogen incorporation in the optical and structural characteristics of nitrogen-dilute InAsN QDs" European Materials Research Society Spring Meeting 2010 Strasbourg (France), 2010
29: (2010)
J. M. ULLOA, M. DEL MORAL, M. BOZKURT, R. GARGALLO-CABALLERO, A. GUZMÁN, P. M. KOENRAAD, A. HIERRO "GaAsSb-capped InAs quantum dots: from enlarged quantum dot height to alloy fluctuations" Internacional Quantum Dot Conference 2010. Nottinghan (UK), 2010
30: (2010)
J.M. ULLOA, R. GARGALLO-CABALLERO, A. GUZMÁN, A. HIERRO . "GaAsSbN-capped InAs quantum dots for 1.3 - 1.55 µm emission" European Materials Research Society Spring Meeting 2010. Strasbourg (France), 2010
31: (2011)
Absorption analysis of GaAsSb-capped InAs/GaAs quantum-dot infrared photodetectors
32: (2011)
Analysis of the modified optical properties of GaAs1-xSbx-capped InAs/GaAs quantum dots
33: (2011)
Comparison of interface properties in two-dimensional heterostructures grown layer-by-layer or by step flow
34: (2011)
Evaluation of the In desorption during the capped process in diluted nitride In(Ga)As quantum dots
35: (2011)
Gas sensor based on room temperature optical properties of Surface QDs
36: (2011)
MBE growth approaches for improving Sb-based In0.5Ga0.5As(Sb)/GaAs QDs
37: (2011)
Mid-infrared photodetectors based on GaAsSb-capped InAs quantum dots
38: (2011)
Modified optical properties of GaAs(Sb)(N)-capped InAs/GaAs quantum dots
39: (2011)
Oxide based UV photodetection using schottky photodiodes
40: (2011)
Room temperature photoluminescence of InGaAs Surface Quantum Dots
41: (2011)
Size, strain, and band offset engineering in GaAs(Sb)(N)-capped InAs quantum dots for 1.3 - 1.55 µm LEDs and LDs
42: (2011)
Synthesis and characterization of GaAsSb-capped InAs-based QDIPs
43: (2011)
Tuning the size, strain and band offsets of InAs/GaAs quantum dots through a thin GaAs(Sb)(N) capping layer
44: (2012)
Broad band structure tunability of InAs/GaAs quantum dots with a thin GaAsSbN capping layer
45: (2012)
Impact of N on the structural properties of GaAsSbN-capped InAs QDs studied by advanced transmission electron microscopy techniques
46: (2012)
Impact of the environment on the optical emission of InGaAs surface quantum dots
47: (2012)
Independent tuning of electron and hole confinement in InAs/GaAs quantum dots through a thin GaAsSbN capping layer
48: (2012)
Self-limited interface width of MBE-grown semiconductor heterointerfaces
49: (2013)
High efficient luminescence in type-II GaAsSb-capped InAs quantum dots upon annealing
50: (2013)
High performance environment sensors based on InGaAs surface Quantum Dots.
51: (2013)
Impact of a thin GaAsSb capping layer on the lasing characteristics of InAs/GaAs quantum dot lasers
52: (2013)
Nitride 2DEG-based devices for UV photodetection
53: (2013)
Nitride 2DEG-based devices for UV photodetection
54: (2013)
Room temperature luminescence beyond 1.3 ìm from GaAsSbN-capped InAs quantum dots
55: (2013)
Room temperature luminescence beyond 1.3 ìm from GaAsSbN-capped InAs quantum dots
56: (2014)
Stacked GaAsSbN-capped InAs/GaAs quantum dots for enhanced solar cell efficiency
57: (2015)
Analysis of Sb and In distribution in GaAsSb-capped InAs quantum dots by advance transmission electron microscopy
58: (2015)
Capping layer growth rate and the optical and structural properties of GaAsSbN-capped InAs/GaAs quantum dots
59: (2015)
GaAs(Sb)(N)-caped InAs/GaAs Quantum Dots for enhanced solar cell efficiency
60: (2015)
Role of surface states on the sensing properties of In0.5Ga0.5As surface quantum dots
61: (2015)
Stacked GaAs(Sb)(N)-capped InAs/GaAs quantum dots for enhanced solar cell effiiency
62: (2015)
Type-I and Type-II InAs/GaAs Quantum Dot solar cells with a GaAsSb capping layer
63: (2016)
Análisis de la interdifusión en superredes de GaNAsSb para aplicaciones en celdas solares de multiunión
64: (2016)
Analysis of capping with GaAsSbN thin layers in (un)coupled InAs/GaAs multi quantum dot layers for enhanced solar cells
65: (2016)
Analysis of capping with GaAsSbN thin layers in (un)coupled InAs/GaAs multi quantum dot layers for enhanced solar cells
66: (2016)
Analysis of the Sb and N distribution in GaAsSb/GaAsN superlattices for solar cell applications
67: (2016)
Analysis of the Sb and N distribution in GaAsSb/GaAsN superlattices for solar cell applications
68: (2016)
Role of the wetting layer in the performance of quantum dot solar cells
69: (2016)
Role of the wetting layer in the performance of quantum dot solar cells
70: (2016)
Room Temperature Operation of Laterally Biased Quantum Well Infrared Photodetectors
71: (2016)
Strain-balanced GaAsSb-GaAsN Type-II superlattices as 1 eV layer for efficient multi-junction solar cells
72: (2016)
Strain-balanced Type-II GaAsSb/GaAsN Superlattices as 1 eV layer for Efficient Multi-junction Solar Cells
73: (2016)
Strain-balanced Type-II GaAsSb/GaAsN Superlattices as 1 eV layer for Efficient Multi-junction Solar Cells
74: (2016)
Strain-balanced Type-II GaAsSb/GaAsN Superlattices for Efficient Multi-junction Solar Cells
75: (2016)
Strain-balanced Type-II GaAsSb/GaAsN Superlattices for Efficient Multi-junction Solar Cells
76: (2017)
High temperature photoresponse of double Quantum-Well Infrared Photodetectors using laterally biased structures
77: (2017)
Strain-balanced type-II GaAsSb/GaAsN superlattices for efficient multi-junction solar cells
78: (2018)
Interplay between carrier lifetime, electronic coupling, and extraction efficency
79: (2018)
QWIP structures with lateral bias : An alternative approach to achieve high-temperature operation
80: (2018)
Type-II GaAsSb/GaAsN superlattice solar cells
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S2i 2023 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNPACTO (IPT-020000-2010-22)
