Observatorio de I+D+i UPM
• ESPAÑOL
• ENGLISH
INVESTIGADORES
ESTRUCTURAS DE I+D+I
ACTIVIDAD INVESTIGADORA
INNOVACIÓN
Investigador
Miguel Angel Sanchez Garcia
Categoría Investigador
CATEDRATICO UNIVERSIDAD
Escuela UPM
E.T.S. DE INGENIEROS DE TELECOMUNICACION
Departamento:
INGENIERÍA ELECTRÓNICA
Centros/Institutos I+D+i
INST.SIST.OPTOELECT. MICROTECNOL. "ISOM"
Area Conocimiento
TECNOLOGIA ELECTRONICA
Grupo de Investigación:
Grupo de Dispositivos Semiconductores del ISOM
Email (Directorio UPM)
miguelangel.sanchez
upm.es
Teléfono (Directorio UPM)
910672226
Datos de Memorias relacionados
Proyectos de I+D+i y generación de recursos
52 Proyectos de I+D+i
1: (2007)
"Ayudas para apoyar las líneas de I+D en el programa de creación y consolidación de grupos de investigación de la Universidad Politécnica de Madrid. CAM, Referencia: CCG07-UPM/000-3220"
2: (2007)
"(Bio)sensores químicos avanzados para medida in-situ de la calidad de aguas basados en elementos específicos de reconocimiento y lectura "multifuncional integrada"
3: (2007)
"(Bio)sensores químicos avanzados para medida in-situ de la calidad de aguas basados en elementos específicos de reconocimiento y lectura (multifuncional integrada)"
4: (2007)
"Crecimiento y caracterización de heteroestructuras de nitruros-III e integración con materiales magnéticos para su aplicación de dispositivos híbridos magnético-semiconductor" TEC2004-05698-C02-01/MIC
5: (2007)
Crecimiento y caracterización de heteroestructuras de nitruros-III e integración con materiales magnéticos para su aplicación de dispositivos híbridos magnético-semiconductor" TEC2004-05698-C02-01/MIC, ADICIONAL
6: (2007)
"Desarrollo de Dispositivos Emisores y Detectores en el rango Ultravioleta para Aplicaciones en Comunicaciones, Generación de Luz Blanca, Detección de Contaminación y Bio-Fotónica". Min. Educación y Ciencia. Referencia: MAT2004-02875
7: (2007)
"Desarrollo de Dispositivos Emisores y Detectores en el rango Ultravioleta para Aplicaciones en Comunicaciones, Generación de Luz Blanca, Detección de Contaminación y Bio-Fotónica". Min. Educación y Ciencia. Referencia: MAT2004-02875. ADICIONAL
8: (2007)
"International Workshop 2007 on MBE". Sierra Nevada, Granada, España. ISOM-UPM
9: (2007)
"Microscopio de barrido de capacidad para caracterización de nanoestructuras". Min. Educación y Ciencia, UNPM06-33-037 (2007)
10: (2007)
"Nanoestructuras de Semiconductores como Componentes para la Información Cuántica (NANIC)" Min. Educación y Ciencia, Acción Estratégica en Nanotecnología. NAN2004-09109-C04-02. (2005-2008).
11: (2007)
"Nanoestructuras de semiconductores como componentes para la información cuántica"(NANOCOMIC)
12: (2007)
"Sistema de caracterización óptica avanzada multifuncional"
13: (2007)
"14th European Workshop on MBE, Sierra Nevada, Granada, ESPAÑA" Min. Educación y Ciencia, ACC-030000-2007-3 (2007)
14: (2007)
"14th European Workshop on MBE, Sierra Nevada, Granada, ESPAÑA" Min. Educación y Ciencia, ACC-030000-2007-3(2007)
15: (2007)
"14th European Workshop on MBE, Sierra Nevada, Granada, ESPAÑA" Ministerio de Educación y Ciencia.TEC2007-30322-E/ (2007)
16: (2007)
"14th European Workshop on MBE, Sierra Nevada, Granada, ESPAÑA" Ministerio de Educación y Ciencia.TEC2007-30322-E/ (2007)
17: (2007)
"14th European Workshop on MBE, Sierra Nevada, Granada, ESPAÑA.ISOM-UPM
18: (2008)
Ayudas financieras para la mejora de las infraestructuras científicas y tecnológicas singulares y para el acceso a las mismas
19: (2008)
(Bio)sensores químicos avanzados para medida in-situ de la calidad de aguas basados en elementos específicos de reconocimiento y lectura multifuncional integrada
20: (2008)
Bio)sensores químicos avanzados para medida in-situ de la calidad de aguas basados en elementos específicos de reconocimiento y lectura multifuncional integrada
21: (2008)
Desarrollo de Micro y Nanocavidades incluyendo regiones activas de Puntos Cuánticos de Nitruros-III: Aplicaciones a emisores de luz en azul y UV (QUADONIC)
22: (2008)
Desarrollo matriz de detectores multiespectral en el infrarrojo 3-5
23: (2008)
High quality Material and intrinsic Properties of InN and indium rich Nitride Alloys-(The Rainbow ITN)
24: (2008)
I+D de Micro y Nanosistemas basados en Nitruros III-V para comunicaciones y sensores MINANI
25: (2008)
Programa de infraestructura y gestión de calidad de la red de laboratorios incluido en el Contrato-Programa de I+D entre la CAM y la UPM
26: (2008)
Programa de infraestructura y gestión de calidad de la red de laboratorios incluido en el Contrato-Programa de I+D entre la CAM y la UPM
27: (2008)
14th European Molecular Beam Epìtaxy" Acción complementaria ACC-030000-2007-3
28: (2008)
14th European Molecular Beam Epìtaxy. Acción complementaria TEC2007-30322-E/
29: (2009)
bio sensores quimicos avanzados para medida in situ de la calidad de aguas..
30: (2009)
CRECIMIENTO Y CARACTERIZACION DE HETEROESTRUCTURAS DE NITRUTOS-III
31: (2009)
FOURTH INTERNATIONAL SYMPOSIUM ON BLUE LASER AND LIGHT EMITTING DIODES ISBLLED 2002
32: (2009)
HIGH QUALITY MATERIAL AN INTRINSIC PROPERTIES OF INN AND INDIUM RICH NITRIDE ALLOYS (THE RAINBOW ITN) 213238
33: (2009)
SISTEMA DE CARACTERIZACION OPTICA AVANZADA MULTIFUNCIONAL
34: (2010)
HIGH QUALITY MATERIAL AN INTRINSIC PROPERTIES OF INN AND INDIUM RICH NITRIDE ALLOYS (THE RAINBOW ITN) 213238
35: (2010)
HIGH QUALITY MATERIAL AN INTRINSIC PROPERTIES OF INN AND INDIUM RICH NITRIDE ALLOYS (THE RAINBOW ITN) 213238
36: (2010)
RAINBOW SECOND TRAINING WORKSHOP
37: (2011)
CELULAS SOLARES DE INGAN MEJORADAS CON PLASMONES SUPERFICIALES....
38: (2011)
RAINBOW: High quality and intrinsic Properties of InN and indium rich Nitride Alloys
39: (2011)
RAINBOW SECOND TRAINING WORKSHOP
40: (2011)
SMASH: Smart nanostructured semiconductors for energy saving light solutions
41: (2011)
SNB09: Substrate nanopatterning by e-beam lithography to growth ordered arrays of III-Nitride nanodetectors: application to IR detectors, emitters, and new Solar Cells
42: (2012)
CELULAS SOLARES DE INGAN MEJORADAS CON PLASMONES SUPERFICIALES....
43: (2012)
CELULAS SOLARES DE INGAN MEJORADAS CON PLASMONES SUPERFICIALES....
44: (2012)
GECCO: 3D GaN for High Efficiency Solid State Lighting
45: (2013)
CELULAS SOLARES DE INGAN MEJORADAS CON PLASMONES SUPERFICIALES....
46: (2013)
HIGH QUALITY MATERIAL AN INTRINSIC PROPERTIES OF INN AND INDIUM RICH NITRIDE ALLOYS (THE RAINBOW ITN) 213238
47: (2014)
CELULAS SOLARES DE INGAN MEJORADAS CON PLASMONES SUPERFICIALES....
48: (2015)
FESEM: Extension de medida de catodoluminiscencia (cl) al rango infrarojo en microscopio de barrido electrónico FESEM
49: (2015)
FESEM: Extensión de medida de catodoluminiscencia(CL) al rango infrarrojo en microcospio de barrido electrónico FESEM
50: (2015)
MBE: ADECUACIÓN DE UN REACTOR DE EPITAXIA DE HACES MOLECULARES (MBE) PARA EL CRECIMIENTO EPITAXIAL DE NANOESTRUCTURAS SEMICONDUCTORAS
51: (2019)
GANQUBIT: Nanohilos basados en GaN para sistemas de información cuántica y circuitos digitales
52: (2019)
Nanohilos basados en GaN para sistemas de información cuántica y circuitos electrónicos digitales (GaNQUBIT)
Formación de Investigadores y Movilidad
6 Estancias y sabáticos recogidos en programas oficiales
1: (2008)
ESTANCIA ANA BENGOECHEA ENCABO: Walter Schottky Institute, en Munich.
2: (2017)
Estancia por colaboración investigadora de Doña Alekseenko Aleksandra Pavlovna.St. Petersburg Politechnic University, Faculty/Department IPhNT, Russia, Saint Petersburg.
3: (2017)
Estancia por colaboración investigadora de Doña Dudina Alina .St. Petersburg Politechnic University, Faculty/Department IPhNT, Russia, Saint Petersburg.
4: (2017)
Estancia por colaboración investigadora de Doña Elina Nepomniashchaia.St. Petersburg Politechnic University, Faculty/Department IPhNT, Russia, Saint Petersburg.
5: (2018)
Estancia de Investigación.- D. Kosuke Iwanaga.- Japan
6: (2018)
Estancia de Investigación.- D. Toshihiro Takagi.-Toyohashi University of Techno
4 Tesis Doctorales
1: (2009)
JAVIER GRANDAL QUINTANA "Crecimiento y caracterización de nitruro de indio por epitaxia de haces moleculares para aplicaciones en el infrarrojo cercano"
2: (2012)
Crecimiento, fabricación y caracterización de heteroestructuras y nanocolumnas ordenadas basadas en nitruros del grupo III para aplicaciones sensoras
3: (2015)
Self assembled and ordered group III nitride nanocolumnar structures for light emitting applications
4: (2017)
Epitaxial Growth and Characterization of InGaN layers for photovoltaic applications
Difusión de Resultados de Investigación
78 Artículos en revistas
1: (2007)
E. CALLEJA, J. GRANDAL, M.A. SÁNCHEZ-GARCÍA, M. NIEBELSCHÜTZ, V. CIMALLA, O. AMBACHER "Evidence of electron accumulation at non-polar surfaces of InN nanocolumns" Applied Physics Letters, 90, 262110-262112 (2007) ISSN: 0003-6951
2: (2007)
E. CALLEJA, J. RISTIC, S. FERNÁNDEZ-GARRIDO, L. CERUTTI, M. A. SÁNCHEZ-GARCÍA, J. GRANDAL, A. TRAMPERT, U. JAHN, G. SANCHEZ, A. GRIOL, B. SANCHEZ "Growth, morphology and structural properties of group-III-nitride nanocolumns and nanodisks" Physica Status Solidi (b), 244, 2816-2837 (2007) ISSN: 1521-3951
3: (2007)
E. CALLEJA, J. RISTIĆ, S. FERNÁNDEZ-GARRIDO, L. CERUTTI, M. A. SÁNCHEZ-GARCÍA, J. GRANDAL, A. TRAMPERT, U. JAHN, G. SANCHEZ, A. GRIOL, B. SANCHEZ "Growth, morphology and structural properties of group-III-nitride nanocolumns and nanodisks" Physica Status Solidi (b), 244, 2816-2837 (2007) ISSN: 0370-1972
4: (2007)
J. GRANDAL, M.A. SANCHEZ-GARCIA , E. CALLEJA , E. LUNA , A. TRAMPERT "Accommodation mechanism of InN nanocolumns grown on Si (111) substrates by molecular beam epitaxy" Applied Physics Letters, 91, 021902-021904 (2007) ISSN: 0003-6951
5: (2007)
J.M. CALLEJA, S. LAZIC, J. SANCHEZ-PÁRAMO, F. AGULLÓ-RUEDA, L. CERUTTI, J. RISTIC, S. FERNÁNDEZ-GARRIDO, M.A. SÁNCHEZ-GARCIA, J. GRANDAL, E. CALLEJA, A. TRAMPERT, U. JAHN "Inelastic light scattering spectroscopy of semiconductor nitride nanocolumns. Physica Status Solidi (b), 244, 2838-2846 (2007) ISSN: 0370-1972
6: (2007)
J.M. CALLEJA, S. LAZIĆ, J. SANCHEZ-PÁRAMO, F. AGULLÓ-RUEDA, L. CERUTTI, J. RISTIĆ, S. FERNÁNDEZ-GARRIDO, M.A. SÁNCHEZ-GARCIA, J. GRANDAL, E. CALLEJA, A. TRAMPERT, U. JAHN "Inelastic light scattering spectroscopy of semiconductor nitride nanocolumns. Physica Status Solidi (b), 244, 2838-2846 (2007) ISSN: 0370-1972
7: (2007)
M. NIEBELSCHÜTZ, V. CIMALLA, O. AMBACHER, T. MACHLEIDT, K.H. FRANKE, J. RISTIC, J. GRANDAL, M.A. SÁNCHEZ-GARCÍA, E. CALLEJA "Electrical characterization of Group III-Nitride nanocolumns with Scanning Force Microscopy" Modern Research and Educational Topics in Microscopy, Nº3, Eds. A. Méndez-Vilas, J. Díaz. Formatex, 560-567 (2007) ISSN: 0370-1972
8: (2007)
S. LAZIĆ, E. GALLARDO, J.M. CALLEJA, F. AGULLO-RUEDA, J. GRANDAL, M.A. SANCHEZ-GARCIA, E. CALLEJA, E. LUNA, A. TRAMPERT "Phonon-plasmon coupling in electron surface accumulation layers in InN nanocolumns" Physical Review B, 76, 205319-205321 (2007) ISSN: 1098-0121
9: (2007)
S. LAZIC, E. GALLARDO, J.M. CALLEJA, F. AGULLO-RUEDA, J. GRANDAL, M.A. SANCHEZ-GARCIA, E. CALLEJA, E. LUNA, A. TRAMPERT "Phonon-plasmon coupling in electron surface accumulation layers in InN nanocolumns" Physical Review B, 76, 205319-205321 (2007) ISSN: 1098-0121
10: (2007)
S. LAZIC, E. GALLARDO, J.M. CALLEJA, F. AGULLO-RUEDA, M.A. SANCHEZ-GARCIA, J. GRANDAL, E. CALLEJA, A. TRAMPERT "Coupled longitudinal optical phonon-plasmon modes in InN nanocolumns" AIP Conference Proceedings 893, 287 (2007) ISSN: 1077-3118
11: (2007)
S. LAZIĆ, E. GALLARDO, J.M. CALLEJA, F. AGULLO-RUEDA, M.A. SANCHEZ-GARCIA, J. GRANDAL, E. CALLEJA, A. TRAMPERT "Coupled longitudinal optical phonon-plasmon modes in InN nanocolumns" AIP Conference Proceedings 893, 287 (2007) ISSN: 1077-3118
12: (2007)
S. VALDUEZA-FELIP, F.B. NARANJO, M. GONZÁLEZ-HERRÁEZ, H. FERNÁNDEZ, J. SOLIS, S. FERNÁNDEZ, F. GUILLOT, E. MONROY, J. GRANDAL, M.A. SÁNCHEZ-GARCÍA "Novel nitride - based materials for nonlinear optical signal processing applications at 1.5 µm"roc. IEEE Inter. Symposium on Intelligent Signal Processing WISP 2007 ISSN: 1553-572X
13: (2008)
Band bending at In-rich InGaN surfaces
14: (2008)
Fabrication and stress relief modelling of GaN based MEMS test structures grown by MBE on Si(111)
15: (2008)
Implementing FFT-Based Digital Channelized Receivers on FPGA Platforms
16: (2008)
Raman scattering by coupled plasmon-LO phonons in InN nanocolumns
17: (2008)
Raman scattering by longitudinal optical phonons in InN nanocolumns grown on Si(111) and Si(001) substrates
18: (2008)
Space charged region in GaN and InN nanocolumns investigated by Atomic Force Microscopy
19: (2009)
A . BENGOECHEA ENCABO, J. HOWGATE, M. STUTZMANN, M. EICKHOFF, M.A. SÁNCHEZ-GARCÍA Ultrathin GaN/AlN/GaN solution-gate field effect transistor with enhanced resolution at low source-gate voltage Sensors and Actuators B, 142, 304 (2009)
20: (2009)
A. BENGOECHEA ENCABO, J. HOWGATEB, M. STUZMANNB, M. EICKHOFF, M.A SANCHEZ-GARCIA "Ultrathin GaN/AlN/GaN solution-gate field effect transistor with enhanced resolution at low source-gate voltage" Sensors and Actuators B 142 (2009) 304-307
21: (2009)
F.B.NARANJO, M.GONZÁLEZ-HERRÁEZ, S.VALDUEZA-FELIP, H.FERNÁNDEZ, J.SOLIS, S. FERNÁNDEZ, E.MONROY, J.GRANDAL, M.A.SÁNCHEZ-GARCÍA "Non-linear properties of nitride-based nanostructures for optically controlling the speed of light at 1.5 mm" Microelectronics Journal 40, 349-352 (2009)
22: (2009)
J. GRANDAL, M.A. SÁNCHEZ-GARCÍA, E. CALLEJA, E. GALLARDO, J.M. CALLEJA, E. LUNA, A. TRAMPERT, U. JAHN, "InN nanocolumns grown by plasma-assisted molecular beam epitaxy on A-plane GaN templates" Applied Physics Letters, 94, 221908 (2009)
23: (2009)
N. SOFIKITI, N. CHANIOTAKIS, J. GRANDAL, M. UTRERA, M.A. SANCHEZ-GARCIA, E. CALLEJA, E. ILIOPOULOS, A. GEORGAKILAS, "Direct immobilization of enzymes in GaN and InN nanocolumns: The urease case study2 Applied Physics Letters 95, 113701 (2009)
24: (2009)
S. FERNÁNDEZ-GARRIDO, J. GRANDAL, E. CALLEJA, M.A. SÁNCHEZ-GARCÍA, D. L. ROMERO "A growth diagram for plasma-assisted molecular beam epitaxy of GaN nanocolumns on Si(111)" Journal of Applied Physics, 106, 126102-1, 126102-3 (2009)
25: (2010)
A.VILALTA-CLEMENTE, G. R.MUTTA, M. P. CHAUVAT, M. MORALES, J. L. DOUALAN, P. RUTERANA, J. GRANDAL, M. A. S ÁNCHEZ-GARCIA, F. CALLE, E. VALCHEVA, K. KIRILOV, ''Investigation of InN layers grown by molecular beam epitaxy on GaN templates'' Physica Status Solidi (a), 207, 1079-1082 (2010)
26: (2010)
E. CALLEJA, M.A. SÁNCHEZ-GARCIA, P. LEFEBVRE, J.RISTIC, F. BARBAGINI, A. BENGOECHEA, Z. GACEVIC. "Los LEDs también iluminarán las ciudades" Revista UPM, 16, 11-15 (2010)
27: (2010)
E. SAKALAUSKAS, P. SCHLEY, J. RATHEL, T.A. KLAR, R. MULLER, J. PEZOLDT, K. TONISCH, J. GRANDAL, M.A. SANCHEZ-GARCIA, E. CALLEJA, A. VILALTA-CLEMENTE, P. RUTERANA, R. GOLDHAHN, "Optical properties of InN grown on Si(111) substrate". Physica Status Solidi (a) 207, 5, 1066 (2010)
28: (2010)
GaN and InN nanocolumns as electrochemical sensing elements: Potentiometric response to KCl, pH and urea
29: (2010)
Investigation of InN layers grown by molecular beam epitaxy on GaN templates
30: (2010)
N. SOFIKITI, N. CHANIOTAKIS, J. GRANDAL, M. UTRERA, M.A. SÁNCHEZ-GARCÍA, E. CALLEJA, "GaN and InN nanocolumns as electrochemical sensing elements: Potentiometric response to KCl, pH and urea" Materials Letters 64, 1332 (2010)
31: (2010)
Optical properties of InN grown on Si(111) substrate
32: (2011)
Critical aspects of substrate nanopatterning for the ordered growth of GaN nanocolumns
33: (2011)
Decoupling single nanowire mobilities limited by surface scattering and bulk impurity scattering
34: (2011)
Emission control of InGaN nanocolumns grown by molecular-beam epitaxy on Si(111) substrates
35: (2011)
InN/InGaN multiple quantum wells emitting at 1.5 mu m grown by molecular beam epitaxy
36: (2011)
Polarity determination by electron energy-loss spectroscopy: application to ultra-small III-nitride semiconductor nanocolumns
37: (2011)
Radiative defects in GaN nanocolumns: Correlation with growth conditions and sample morphology
38: (2011)
Understanding the selective area growth of GaN nanocolumns by MBE using Ti nanomasks
39: (2011)
Volume charge carrier number fluctuations probed by low frequency noise measurements in InN layers
40: (2012)
E-beam nano-patterning for the ordered growth of GaN/InGaN nanorods
41: (2012)
Fabrication of GaN nanorods by focused ion beam
42: (2012)
Investigation of AlInN barrier ISFET structures with GaN capping for pH detection
43: (2012)
Ordered gan/ingan nanorods arrays grown by molecular beam epitaxy for phosphor-free white light emission
44: (2012)
Oxygen photo-adsorption related quenching of photoluminescence in group-III nitride nanocolumns
45: (2012)
Plasmon excitation in electron energy-loss spectroscopy for determination of indium concentration in (In,Ga)N/GaN nanowires
46: (2012)
Selective area growth and characterization of InGaN nano-disks implemented in GaN nanocolumns with different top morphologies
47: (2012)
Selective area growth of a- and c-plane GaN nanocolumns by molecular beam epitaxy using colloidal nanolithography
48: (2012)
Selective area growth of a- and c-plane GaN nanocolumns by molecular beam epitaxy using colloidal nanolithography
49: (2013)
Investigation of AlInN barrier ISFET structures with GaN capping for pH detection
50: (2013)
Investigation of AlInN barrier ISFET structures with GaN capping for pH detection
51: (2013)
Monolithic integration of InGaN segments emitting in the blue, green, and red spectral range in single ordered nanocolumns
52: (2013)
Monolithic integration of InGaN segments emitting in the blue, green, and red spectral range in single ordered nanocolumns (vol 102, 181103, 2013)
53: (2013)
Selective area growth and characterization of GaN nanocolumns, with and without an InGaN insertion, on semi-polar (11-22) GaN templates
54: (2013)
Selective area growth and characterization of GaN nanocolumns, with and without an InGaN insertion, on semi-polar (11-22) GaN templates
55: (2013)
Selective area growth and characterization of InGaN nanocolumns for phosphor-free white light emission
56: (2013)
Selective area growth and characterization of InGaN nanocolumns for phosphor-free white light emission
57: (2013)
Selective area growth of In(Ga)N/GaN nanocolumns by molecular beam epitaxy on GaN-buffered Si(111): from ultraviolet to infrared emission
58: (2013)
Selective area growth of In(Ga)N/GaN nanocolumns by molecular beam epitaxy on GaN-buffered Si(111): from ultraviolet to infrared emission
59: (2014)
Advances on MBE Selective Area Growth of III-Nitride nanostructures: from nanoLEDs to pseudo substrates
60: (2014)
Growth of InGaN/GaN core-shell structures on selectively etched GaN rods by molecular beam epitaxy
61: (2014)
Investigation of III-V Nanowires by Plan-View Transmission Electron Microscopy: InN Case Study
62: (2014)
Light-Emitting-Diodes based on ordered InGaN nanocolumns emitting in the blue, green and yellow spectral range
63: (2014)
Light-Emitting-Diodes based on ordered InGaN nanocolumns emitting in the blue, green and yellow spectral range
64: (2014)
Selective area growth of GaN nanostructures: A key to produce high quality (11-20) a-plane pseudo-substrates
65: (2014)
"Selective Area Growth of III-Nitrides on polar and semi-polar orientations: from light emitters to pseudo-substrates"
66: (2015)
Correlation among Growth Conditions, Morphology, and Optical Properties of Nanocolumnar InGaN/GaN Heterostructures Selectively Grown by Molecular Beam Epitaxy
67: (2015)
Demonstration of (In, Ga)N/GaN Core-Shell Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy on Ordered MOVPE GaN Pillars
68: (2015)
Distinguishing Cubic and Hexagonal phases within InGaN/GaN micro-structures using Electron Energy Loss Spectroscopy
69: (2015)
Lattice pulling effect and strain relaxation in axial (In, Ga)N/GaN nanowire heterostructures grown on GaN-buffered Si(111) substrate
70: (2015)
Selective area growth of III-nitride nanorods on polar, semi-polar, and non-polar orientations: device applications.
71: (2016)
Comparative study of single InGaN layers grown on Si(111) and GaN(0001) templates: The role of surface wetting and epitaxial constraint
72: (2016)
Distinguishing cubic and hexagonal phases within InGaN/GaN microstructures using electron energy loss spectroscopy
73: (2016)
Oxygen-related photoluminescence quenching in selectively grown GaN nanocolumns: Dependence on diameter
74: (2016)
Titanium induced polarity inversion in ordered (In,Ga)N/GaN nanocolumns
75: (2017)
Selective area growth of AIN/GaN nanocolumns on (0001) and (11-22) GaN/sapphire for semi-polar and non-polar AIN pseudo-templates
76: (2017)
Selective Area Growth of InGaN/GaN Nanocolumnar Heterostructures by Plasma-Assisted Molecular Beam Epitaxy
77: (2018)
Effect of different buffer layers on the quality of InGaN layers grown on Si
78: (2019)
Ordered arrays of defect-free GaN nanocolumns with very narrow excitonic emission line width
2 Capítulos de libros
1: (2014)
Selective area growth of GaN nanowires by plasma-assisted molecular beam epitaxy
2: (2017)
Selective Area Growth of InGaN/GaN Nanocolumnar Heterostructures by Plasma Assisted Molecular Beam Epitaxy
17 Conferencias invitadas en congresos
1: (2007)
M. A.Sánchez-García, J. Grandal, A. Bengoechea, D. López-Romero,E. Calleja, S. Lazic, J.M. Calleja, E. Luna, A. Trampert, M. Niebelschütz, V. Cimalla, O. Ambacher "MBE Growth And Characterization Of InN On Silicon Substrates" European Materials Research Society Meeting (E-MRS) 2007 Estrasburgo (Francia) 28 de mayo al 1 Junio de 2007
2: (2008)
Growth and characterization of Nitrides-based (GaN, AlN, InN) nanostructures European Materials Research Society Meeting (E-MRS) 2008 Symposium G (Wide band gap semiconductor nanostructures for optoelectronic applications) Estrasburgo (Francia), 2008
3: (2008)
Growth and characterization of Nitrides-based (GaN, AlN, InN) nanostructures Mini-Symposium on Physics and Applications of InN and InGaN Semiconductor Materials The Rank Prize Funds Grasmere (Inglaterra), 2008
4: (2008)
MBE growth and characterization of InN-based layers and nanostructures Workshop on Frontier Photonic and Electronic Materials and Devices Hakone, Kanagawa (Japón), 2008
5: (2010)
E. CALLEJA, A. BENGOECHEA-ENCABO, J. GRANDAL, S. FERNÁNDEZ, J. RISTIC, M.A. SANCHEZ-GARCÍA, F. BARBAGINI, P. LEFEBVRE, J.M. CALLEJA, E. GALLARDO, E.LUNA, A. TRAMPERT, U.JAHN. "Spontaneous and ordered growth of III-N nanocolumns by MBE: growth mechanisms and applications to Optoelectronic Devices". International Workshop on Nitride Semiconductors (IWNS 2010) Tampa, Florida (USA) 2010
6: (2011)
MBE growth and characterization of InGaN-based films and nanocolumns on Silicon substrates and GaN templates
7: (2011)
MBE growth and characterization of InGaN-based films and nanocolumns on Silicon substrates and GaN templates
8: (2011)
Surface-related optical properties of GaN and InGaN nanocolumns
9: (2011)
Surface-related optical properties of GaN and InGaN nanocolumns
10: (2011)
Understanding the Selective Area Nucleation and Growth of GaN nanocolumns by MBE using Ti nanomasks
11: (2012)
Influence of substrate type and orientation on the morphology and optical properties of selective area growth of GaN and InGaN nanocolumns
12: (2013)
Selective Area Growth of III-N Nanostructrures for Optoelectronic Applications
13: (2014)
Advances on MBE Selective Area Growth of III-Nitride nanostructures: from nanoLEDs to pseudo substrates
14: (2015)
Morphology and optical properties of ordered GaN and InGaN nanocolumns grown on non-polar and semipolar orientations
15: (2015)
Novel optoelectronics devices
16: (2015)
Selective Area Growth of InGaN/GaN Nanocolumnar structures for Classical and Quantum Light Sources
17: (2017)
Comparative study of InGaN layers for photovoltaic applications grown by PA-MBE on Si(111) using different buffer layers and growth conditions
15 Cursos, seminarios y tutoriales
1: (2011)
Magnetic Hall sensors based on III-V heterostructures. Prof. Sylvie Contreras
2: (2012)
Prof. Magnus Willander. Department of Science and Technology, Linkoping University, Sweden. "Nanostructures and their Applications"
3: (2012)
Ana Bengoechea Encabo.- "Crecimiento, fabricación y caracterización de heteroestructuras y nanocolumnas ordenadas basadas en nitruros del grupo III para aplicaciones sensoras"
4: (2012)
Dr C. J. B. Ford . Cavendish Laboratory, University of Cambridge, UK." Novel designs for quantum computers using moving quantum dots"
5: (2012)
Javier Rodríguez Madrid. ISOM-DIE-UPM. High precision pressure sensors based on SAW devices fabricated on diamond substrates
6: (2012)
Miguel Romera Rabasa.-"Transporte Dependiente de Espín en Estructuras de Magnetorresistencia Gigante con Capas Delgadas de Gadolinio"
7: (2012)
Prof. Stefano Sanguinetti. Dipartimento di Scienza dei Materiali, Universitat di Milano Bicocca, Italy. "Semiconductor Quantum Nanostructures by Droplet Epitaxy"
8: (2012)
Profesor Enrique Calleja. Director del ISOM. "Generación de luz blanca eficiente con nanoestructuras semiconductoras"
9: (2012)
Profesor ponente: Adam Urbanczyk. COBRA Research Institute, Eindhoven University of Technology. "Epitaxial metal nanocrystal-semiconductor quantum dot plasmonic nanostructures"
10: (2012)
Zarko Gacevic.- "Constituent Blocks of III-Nitride Microcavities Grown by Molecular Beam Epitaxy"
11: (2014)
Alternativas para el graduado del GITST. Posibilidades de investigación en un centro de investigación (ISOM-UPM)
12: (2015)
Hydride VPE for current III-V and nitride semiconductor compound issues
13: (2015)
Crystallographic Polarity in Selective-Area Gallium Nitride Nanowire Growth: Which End Is Up?
14: (2015)
Self assembled and ordered group III nitride nanocolumnar structures for light emitting applications
15: (2019)
Evolución de la electrónica y su relación con los minerales.
8 Otras Publicaciones
1: (2012)
Noticia divulgada por Euroresidentes: "El Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM) de la Universidad Politécnica de Madrid reconocido como Centro Internacional de Nanociencia y de Nanotecnología"
2: (2012)
Visita guiada a nuestras Instalaciones con motivo de la XII SEMANA DE LA CIENCIA 2012, mi+d. Hora: 10.00 horas a 14.00 horas. Y el Lunes 12 de noviembre 2012 de 16.00 horas a 18.00 horas.
3: (2013)
Directorio de entidades y organizaciones con capacidades NANO, en el que se ha integrado el ISOM recientemente. ver enlace para descargar SPANISH NANOTECHNOLOGY COMMUNITY Directory 2013 pdf.
4: (2013)
El ISOM forma parte de la Plataforma Tecnológica NANOfutures donde se conectan entidades y organizaciones con capacidades NANO
5: (2014)
Nobel de física para los inventores de los LEDs de luz azul y blanca
6: (2018)
La Noche Europea de los Investigadores se celebró el pasado viernes 28 de septiembre en la ETSIT-UPM y fue todo un éxito de participación y actividades. Esta iniciativa, enmarcada en Horizonte 2020, pretende acercar la investigación y los investigadores a todos los públicos. En el ISOM el Experimento de Invisibilidad fue una de las atracciones con más expectación: Ha aparecido dos veces en el programa de televisión El Hormiguero. También se visitaron los laboratorios del ISOM.
7: (2019)
Delegación de la Universidad Federal del Sur (Rostov del Don, Rusia), visita la ETSIT-UPM
8: (2019)
Visita al ISOM Universidad Purdue, EEUU
68 Ponencia en Congresos
1: (2007)
E. Sillero, A. Bengoechea, M. A. Sánchez-García, F. Calle "III-Nitride MEMS grown by MBE on Si(111): Fabrication and mechanical characterisation" 16th European Workshop on Heterostructures Technology Frejus (Francia) 2 al 5 de septiembre de 2007
2: (2007)
E. Sillero, D. López-Romero, A. Bengoechea, M. A. Sánchez-García, F. Calle "Fabrication and stress relief modelling of GaN based MEMS test structures grown by MBE on Si(111)" 7th International Conference on Nitride Semiconductors (ICNS07) Las Vegas (USA) 16 al 21 de septiembre de 2007
3: (2007)
J. Grandal, A.Bengoechea, M.A. Sánchez-García, E. Calleja, E. Luna, A. Trampert, M. Niebelschütz, V. Cimalla "Structural Characterization Of Inn-Based Layers Grown On Si (111) And Si (001) Substrates By Mbe" 14th European Molecular Beam Epitaxy Workshop 2007 Sierra Nevada, Granada (ESPAÑA) 5 al 7 de marzo de 2007
4: (2007)
J. Grandal, M.A. Sánchez-García, E. Calleja, S. Lazic, J.M. Calleja, E. Luna, A. Trampert "Characterization Of InN Nanocolumns Grown On Si (001) Substrates By Plasma Assisted Molecular Beam Epitaxy" European Material Research Society Spring Conference 2007 Estrasbourg (Francia) 28 de mayo al 1 Junio de 2007
5: (2007)
J. Grandal, M.A. Sánchez-García, E. Calleja, S. Lazic, J.M. Calleja, E. Luna, A. Trampert "Characterization Of Inn Nanocolumns Grown On Si (001) Substrates By Plasma Assisted Molecular Beam Epitaxy"European Material Research Society Spring Conference 2007 Estrasbourg (Francia) 28 de mayo al 1 Junio de 2007
6: (2007)
J. Grandal, M.A. Sánchez-García, E. Calleja, S. Lazic, J.M. Calleja, E. Luna, A. Trampert "Structural and optical characterization of Inn/Ingan multiple quantum wells grown by plasma assisted-MBE" 7th International Conference on Nitride Semiconductors (ICNS07) Las Vegas (NV), USA 16 al 21 de septiembre de 2007
7: (2007)
M. A.Sánchez-García, J. Grandal, A. Bengoechea, D. López-Romero,E. Calleja, S. Lazic, J.M. Calleja, E. Luna, A. Trampert, M. Niebelschütz, V. Cimalla, O. Ambacher "MBE Growth And Characterization Of Inn On Silicon Substrates"European Materials Research Society Meeting (E-MRS) 2007 Estrasburgo (Francia) 28 de mayo al 1 Junio de 2007
8: (2007)
M. Niebelschütz.V. Cimalla, O. Ambacher, T. Machleidt, J. Ristic, J. Grandal, M. A. Sánchez-García. E. Calleja "Space Charged Region In Gan And Inn Nanocolumns Investigated By Atomic Force Microscopy" 7th International Conference on Nitride Semiconductors 2007 Las Vegas (NV), USA 16 al 21 de septiembre de 2007
9: (2007)
S. Lazic, E. Gallardo, J. M. Calleja, F. Agulló-Rueda, J. Grandal, M. A. Sánchez-García, E. Calleja, A. Trampert, E. Luna "Raman Scattering By Coupled Plasmon-Lo Phonons In Inn Nanocolumns" 7th International Conference on Nitride Semiconductors (ICNS07) Las Vegas (NV), USA 16 al 21 de septiembre de 2007
10: (2007)
S. Lazic, E. Gallardo, J.M. Calleja, F. Agulló-Rueda, J. Grandal, M.A. Sánchez-Garcia, E. Calleja "Raman Scattering By Longitudinal Optical Phonons In Inn Nanocolumns Grown On Si(111) And Si(001) Substrates" 13th International Conference on Modulated Semiconductor Structures (MSS-13) Génova (Italia) 15 al 20 de julio de 2007
11: (2007)
S. Lazic, J.M. Calleja, F.Agulló-Rueda, M.A. Sánchez-García, J. Grandal, E. Calleja, A. Trampert "Inelastic light scattering by the longitudinal optical phonons in InN nanocolumns and compact layers" Physics of Light-Matter Coupling in nanostructures La Habana (Cuba) 12 al 17 de abril de 2007
12: (2007)
S. Lazić, E. Gallardo, J. M. Calleja, F. Agulló-Rueda, J. Grandal, M. A. Sánchez-García, E. Calleja, A. Trampert, E. Luna ¿Raman Scattering By Coupled Plasmon-Lo Phonons In Inn Nanocolumns¿ 7th International Conference on Nitride Semiconductors (ICNS07) Las Vegas (NV), USA 16 al 21 de septiembre de 2007
13: (2007)
S. Lazić, E. Gallardo, J.M. Calleja, F. Agulló-Rueda, J. Grandal, M.A. Sánchez-Garcia, E. Calleja "Raman Scattering By Longitudinal Optical Phonons In Inn Nanocolumns Grown On Si(111) And Si(001) Substrates" 13th International Conference on Modulated Semiconductor Structures (MSS-13) Génova (Italia) 15 al 20 de julio de 2007
14: (2007)
S. Lazić, J.M. Calleja, F.Agulló-Rueda, M.A. Sánchez-García, J. Grandal, E. Calleja, A. Trampert "Inelastic light scattering by the longitudinal optical phonons in InN nanocolumns and compact layers" Physics of Light-Matter Coupling in nanostructures La Habana (Cuba) 12 al 17 de abril de 2007
15: (2008)
Characterization of InN nanocolumns grown by PA-MBE on a-plane GaN/r-plane Al2O3 templates International Workshop on Nitride Semiconductor 2008 Montreux, (Suiza), 2008
16: (2008)
Growth of InN nanocolumns on a-plane GaN templates 15th International Conference on Molecular Beam Epitaxy Vancouver (Canada), 2008
17: (2008)
Growth of InN on Silicon substrates Mini-Symposium on Physics and Applications of InN and InGaN Semiconductor Materials The Rank Prize Funds Grasmere (Inglaterra), 2008
18: (2008)
Investigation and Manipulation of Space Charged Regions in GaN and InN Nanocolumns International Conference on Electronic Materials Sydney, (Australia), 2008
19: (2008)
Photoemission and Optical Studies of Electron Accumulation at InN and In-rich InGaN Surfaces
20: (2009)
A. REDONDO-CUBERO, J. PEREIRO, J. GRANDAL, K. LORENZ, N. FRANCO, R. GAGO, E. MUÑOZ, M. A. SÁNCHEZ-GARCÍA, E. CALLEJA, E. ALVES "Structural study of the epitaxial growth in InGaN/GaN heterostructures by ion beam analysis" 33rd Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2009) Málaga (Spain), 2009.
21: (2009)
J. EROLES, A. BENGOECHEA, M.A. SANCHEZ-GARCIA, F. CALLE "Characterization of a pH sensor based on an AlGaN/GaN transistor" 7th Spanish Conference on Electronic Devices. CDE-09. IEEE, Electron Devices, 258-261, ISBN: 978-1-4244-2838-0 Santiado de Compostela (Spain), 2009
22: (2009)
J. GRANDAL, A. BENGOECHEA, M. A. SÁNCHEZ-GARCÍA, E. CALLEJA, E. LUNA, A. TRAMPERT, E. GALLARDO, J.M. CALLEJA "InN/InGaN multiple quantum wells emitting at 1.5 µm" 15th European Workshop on Molecular Beam Epitaxy Zakopane (Poland), 2009
23: (2009)
J.M. ROUTOURE, B. GUILLET, L. MÉCHIN, A. VILALTA-CLEMENTE, J. GRANDAL, M. A. SÁNCHEZ-GARCÍA, S. MARTÍN, F. CALLE, P. RUTERANA "Low frequency noise measurements in InN films" 2009 E-MRS Fall Meeting, Symposium on Indium Nitride. Warsaw (Poland), 2009
24: (2010)
A. BENGOECHEA, J. GRANDAL, S. FERNANDEZ-GARRIDO, M.A. SANCHEZ-GARCIA, F. BARBAGINI, P. LEFEBVRE, E. CALLEJA, E. LUNA, A. TRAMPERT. "Selective area growth of GaN nanocolumns by rf-plasma-assisted MBE". 16th International MBE Conference Berlin (Germany) 2010
25: (2010)
A. VILALTA-CLEMENTE, G. R. MUTTA, M. MORALES, J.L. DOUALAN, J. GRANDAL, M. A. SÁNCHEZ-GARCÍA, F. CALLE, E. VALCHEVA, K. KIRILOV, P. RUTERANA "Structural Study of InN layer with compressive strain" E-MRS, Symposium G: Physics and applications of novel gain materials based on III-V-N compounds Strasbourg (France), 2010
26: (2010)
P. LEFEBVRE, S. ALBERT, J. RISTIC, M.-A. SÁNCHEZ-GARCÍA, E. CALLEJA. "Carrier localization and surface effects in InGaN nanocolumns grown by plasma-assisted molecular beam epitaxy" Int. Workshop on Nitride Semiconductors - IWN 2010 Tampa (USA), 2010
27: (2010)
S. ALBERT, J. GRANDAL, M.A. SANCHEZ-GARCIA, P. LEFEBVRE, J. RISTIC, E. CALLEJA, A. VILALTA-CLEMENTE, B. LACROIX, P. RUTERANA, E. LUNA, U. JAHN, A. TRAMPERT. "MBE growth and characterization of InN/InGaN thin films and nanostructures on GaN templates and Si(111) substrates" 16th International MBE Conference Berlin (Germany) 2010
28: (2011)
Control of the morphology on selective area growth of GaN nanocolumns by rf-plasma-assisted
29: (2011)
E-beam nanopatterning for the selective area growth of III-V nitride nanorods
30: (2011)
Efficient phosphor-free, white light emission from ordered
31: (2011)
Electrochemical capacitance voltage profiling of transition from surface electron depletion to accumulation with increasing In-content in InGaN alloys
32: (2011)
Emission control of InGaN nanocolumns with growth temperature
33: (2011)
Evidence of charge carrier number fluctuations by low frequency noise measurements in MBE grown Indium Nitride layers
34: (2011)
Evidence of charge carrier number fluctuations in InN thin films?
35: (2011)
Evidence of charge carrier number fluctuations in InN thin films?
36: (2011)
Fabrication of GaN nanorods by focused ion beam
37: (2011)
InN-based MIS rectification device
38: (2011)
InN/GaN heterojunction electrical behavior
39: (2011)
Plasma-assisted MBE growth of III-N nanorods: applications to optoelectronic devices and photovoltaics
40: (2011)
Selective area growth of GaN nanocolumns by rf-plasma-assisted MBE at low temperature and under nitrogen-rich conditions
41: (2011)
Substrate nanopatterning by e-beam lithography to growth ordered arrays of III-nitride nanodetectors, white light emitters, and solar cells, Marie Curie Researchers Symposium
42: (2011)
Surface-related optical properties of GaN and InGaN nanocolumns
43: (2011)
The microstructure of InN/InGaN heterostructures and quantum wells grown by MBE
44: (2011)
Understanding the selective area nucleation and growth of GaN Nanocolumns by MBE using Ti nanomasks
45: (2011)
X-ray diffraction and transmission electron microscopy analysis of threading dislocations in MBE grown InN layers
46: (2012)
Electrical characterization of single GaN/InGaN nanorods grown by selective-area MBE
47: (2012)
Graphene Electrodes For Nano-LEDs
48: (2012)
Growth and characterization of ordered InGaN/GaN nanocolumnar structures on GaN/sapphire and Si (111) substrates
49: (2012)
Influence of substrate orientation on the morphology and optical properties of selective area growth GaN nanocolumns and InGaN quantum disks
50: (2012)
Investigation of Al1xInxN barrier ISFET structures with GaN capping on silicon substrates for pH detection
51: (2012)
NanoLEDs with graphene electrode
52: (2012)
Selective area growth of GaN/InGaN nanocolumnar heterostructures on polar, semipolar and non-polar substrates
53: (2013)
AFM electrical characterization of graphene nano LEDs
54: (2013)
Coalescence of selective area growth GaN by MBE, for high quality polar, non polar and semi polar templates
55: (2013)
Growth and characterization of ordered In(Ga)N/GaN nanocolumnar structures on Si (111) substrates with In contents between 0 and 100%
56: (2013)
Improvement of Radar Capabilities by Reconfigurable Digital Signal Processing
57: (2013)
Localized emission from the apex of GaN/(In,Ga)N/GaN
58: (2013)
MBE selective area growth of polar, non-polar and semi-polar GaN and InGaN/GaN nanostructures
59: (2013)
Selective area growth of In(Ga)N/GaN nanocolumns by molecular beam epitaxy on Si(111): from ultraviolet to infrared emission
60: (2013)
Selective area growth of In(Ga)N/GaN nanocolumns on silicon substrates
61: (2013)
Selective area growth of InGaN/GaN nanostructures for green and white light emission
62: (2013)
Selective area growth of polar, non-polar and semi-polar GaN and InGaN/GaN nanostructures
63: (2014)
XRD analysis of InGaN uniform layers grown on Si (111) without any buffer layers and on Sapphire
64: (2015)
Direct imaging of single InGaN/GaN core-shell microrods using nano-scale Scanning Transmission Electron Microscopy Cathodoluminescence
65: (2015)
Selective Area Growth of III- Nitride Nanorods on polar, semi-polar and non-polar orientations: Device applications
66: (2016)
Comparative Study of InGaN Layers Grown by PA-MBE on Si(111) Using Different Buffer Layers and Growth Conditions
67: (2018)
Nanoscale Imaging of Individual AlN/GaN/AlN Quantum Disk embedded in GaN Nanowires
68: (2018)
Selective area growth of GaN nanocolumns with extremely low photoluminescence linewidth of <0.6 meV
Explotación de Resultados y Transferencia de Tecnología
5 Patentes
1: (2012)
Light-emitting diode chip. E2011,0717 DE X /3265/2011E23319DE
2: (2012)
Light-emitting diode chip. E2011,0717 DE X /3265/2011E23319DE
3: (2015)
Temperature-Stable All-InGaN White Nanorod LEDs
4: (2019)
Light-emitting diode chip
5: (2019)
Non-polar III-Nitride binary and ternary materials, method for obtaining thereof and uses
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S2i 2023 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNPACTO (IPT-020000-2010-22)
