Observatorio de I+D+i UPM
• ESPAÑOL
• ENGLISH
INVESTIGADORES
ESTRUCTURAS DE I+D+I
ACTIVIDAD INVESTIGADORA
INNOVACIÓN
Investigador
Fernando Calle Gomez
Categoría Investigador
CATEDRATICO UNIVERSIDAD
Cargos actuales
DIRECTOR DE INSTITUTO.
Escuela UPM
E.T.S. DE INGENIEROS DE TELECOMUNICACION
Departamento:
INGENIERÍA ELECTRÓNICA
Centros/Institutos I+D+i
INST.SIST.OPTOELECT. MICROTECNOL. "ISOM"
Area Conocimiento
TECNOLOGIA ELECTRONICA
Grupo de Investigación:
Grupo de Dispositivos Semiconductores del ISOM
Email (Directorio UPM)
fernando.calle
upm.es
Teléfono (Directorio UPM)
910672202
Datos de Memorias relacionados
Proyectos de I+D+i y generación de recursos
95 Proyectos de I+D+i
1: (2007)
"Ayudas para apoyar las líneas de I+D en el programa de creación y consolidación de grupos de investigación de la Universidad Politécnica de Madrid. CAM, Referencia: CCG07-UPM/000-3220"
2: (2007)
"(Bio)sensores químicos avanzados para medida in-situ de la calidad de aguas basados en elementos específicos de reconocimiento y lectura "multifuncional integrada"
3: (2007)
"(Bio)sensores químicos avanzados para medida in-situ de la calidad de aguas basados en elementos específicos de reconocimiento y lectura (multifuncional integrada)"
4: (2007)
"Demostrador de un conmutador Microelectromecánico operando en altas frecuencia"
5: (2007)
"Demostrador de un conmutador Microelectromecánico operando en altas frecuencias" Ministerio de Industria,Turismo y Comercio, FIT-330100-2007-66 (2007-2008)
6: (2007)
"I+D de Micro y Nanosistemas basados en Nitruros III-V para comunicaciones y sensores (MINANI)" Min. Educación y Ciencia, TEC-2007-67065/MIC (2007-2010)
7: (2008)
Ayudas financieras para la mejora de las infraestructuras científicas y tecnológicas singulares y para el acceso a las mismas
8: (2008)
Ayudas para apoyar las líneas de I+D en el programa de creación y consolidación de grupos de investigación de la UPM. (Resolución de 19 de junio de 2007)
9: (2008)
Demostrador de un conmutador Microelectromecánico operando en altas frecuencia
10: (2008)
Demostrador de un conmutador Microelectromecánico operando en altas frecuencia
11: (2008)
Depósito y caracterización de capa antidifusa sobre acero (CENIT-CETICA)
12: (2008)
Desarrollo de procedimientos de medida de transistores de GaN
13: (2008)
High quality Material and intrinsic Properties of InN and indium rich Nitride Alloys-(The Rainbow ITN)
14: (2008)
I+D de Micro y Nanosistemas basados en Nitruros III-V para comunicaciones y sensores MINANI
15: (2008)
33rd Wokshop on compound semiconducotr devices and integrated circuits
16: (2009)
AYUDAS PARA GASTOS ASOCIADOS AL DESARROLLO DE PROGRAMAS CON MENCION DE CALIDAD CURSO 2005-2006
17: (2009)
CONGRESO WOCSDICE 2009
18: (2009)
DEMOSTRADOR DE UN CONMUTADOR MICROELECTROMECANICO OPERANDO EN ALATAS FRECUENCIAS
19: (2009)
DEMOSTRADOS DE UN CONMUTADOR MICROELECTROMECANICO OPERANDO EN ALTAS FRECUENCIAS
20: (2009)
DEPÓSITO Y CARACTERIZACIÓN DE CAPA ANTIDIFUSORA SOBRE ACERO CENIT CETICA.
21: (2009)
DESARROLLO DE PROCEDIMIENTOS DE MEDIDA DE TRANSITORES GAN
22: (2009)
DESMOSTRADOR DE UN CONMUTADOR MICROELECTROMECÁNICO OPERAND EN ALTAS FRECUENCIAS.
23: (2009)
ESTUDIO DE LOS MECANISMOS DE DEGRADACIÓN EN AMPLIFICADORES CON PHEMTS DE GAAS/A/GAAS MONOLÍTICOS.
24: (2009)
FONDOS FEDER A DISPOSICION DE INVESTIGADORES
25: (2009)
I+D DE MICRO Y NANOSISTEMAS BASADOS EN NITRUROS III PARA COMUNICACIONES Y SENSORES
26: (2009)
33RD WORKSHOP ON COMPOUND SEMICONDUCTOR DEVICES AND INTEGRATED CIRCUITS
27: (2010)
DEPÓSITO Y CARACTERIZACIÓN DE CAPA ANTIDIFUSORA SOBRE ACERO CENIT CETICA.
28: (2010)
ESTUDIO DE LOS MECANISMOS DE DEGRADACIÓN EN AMPLIFICADORES CON PHEMTS DE GAAS/A/GAAS MONOLÍTICOS.
29: (2010)
HIGH FREQUENCY NANORESONATORS BY MEMS TECHNOLOGIES
30: (2010)
HIGH FREQUENCY RESONATORS ON ALN/DIAMOND STRUCTURES, READI. TEC2010-19511 (2010-2013).
31: (2010)
HIGH QUALITY MATERIAL AN INTRINSIC PROPERTIES OF INN AND INDIUM RICH NITRIDE ALLOYS (THE RAINBOW ITN) 213238
32: (2010)
I+D DE MICRO Y NANOSISTEMAS BASADOS EN NITRUROS III PARA COMUNICACIONES Y SENSORES
33: (2010)
RESONADORES DE ALTA FRECUENCIA EN ESTRUCTURAS ALN/DIAMANTE
34: (2010)
subp ISOM: EQUIPO DE INVESTIGACION - DISPOSITIVOS AVANZADOS DE GAP ANCHO PARA EL USO RACIONAL DE LA ENERGIA (RUE): CSIC+UV+UPC+URV+ROBOTIKER+UZ+UO+UPM
35: (2010)
33RD WORKSHOP ON COMPOUND SEMICONDUCTOR DEVICES AND INTEGRATED CIRCUITS
36: (2011)
'Apoyo del ISOM a la solicitud de beca-contrato predoctoral del Investigador David González. Temática: Modelado de ondas acústicas en grafeno''. Entidad: Dpto. Física de Materiales, Facultad de Ciencias Físicas. UCM. Código: Beca-contrato predoctoral CEI (2011). IP: Prof. Fernando Sols/Fernando Calle .
37: (2011)
Contrato empresa HEMTs
38: (2011)
'Contrato postdoctoral del Dr. Marko Tadjer. Temática: Tecnología de transistores basados en nitruros del grupo III''. Entidad: Profs. Germán González y Álvaro de Prado, Dpto. Física Aplicada III, Facultad de Ciencias Físicas, Universidad Complutense de Madrid. Código: contrato postdoctoral (Abril de 2011). IP: Fernando Calle.
39: (2011)
DESMOSTRADOR DE UN CONMUTADOR MICROELECTROMECÁNICO OPERAND EN ALTAS FRECUENCIAS.
40: (2011)
HIGH FREQUENCY NANORESONATORS BY MEMS TECHNOLOGIES
41: (2011)
I+D DE MICRO Y NANOSISTEMAS BASADOS EN NITRUROS III PARA COMUNICACIONES Y SENSORES
42: (2011)
RAINBOW: High quality and intrinsic Properties of InN and indium rich Nitride Alloys
43: (2011)
RESONADORES DE ALTA FRECUENCIA EN ESTRUCTURAS ALN/DIAMANTE
44: (2011)
SMASH: Smart nanostructured semiconductors for energy saving light solutions
45: (2011)
SUBP ISOM: EQUIPO DE INVESTIGACION - DISPOSITIVOS AVANZADOS DE GAP ANCHO PARA EL USO RACIONAL DE LA ENERGIA (RUE): CSIC+UV+UPC+URV+ROBOTIKER+UZ+UO+UPM
46: (2012)
Advanced Wide Band Gap Semiconductor Devices for Rational Use of Energy, RUE, Consolider
47: (2012)
Amplificadores de envolvente de banda ancha para etapas EER/ET/ y fabricación de dispositivos de nitruro de Galio (GAN), AEGAN
48: (2012)
Amplificadores de envolvente de banda ancha para etapas EER/ET/ y fabricación de dispositivos de nitruro de Galio (GAN), AEGAN
49: (2012)
Contrato empresa HEMTs
50: (2012)
Contrato empresa HEMTs
51: (2012)
High frequency nanoresonators by MEMS technologies
52: (2012)
High frequency nanoresonators by MEMS technologies
53: (2012)
High frequency Resonators on AlN/Diamond structures, ReADi
54: (2012)
High frequency Resonators on AlN/Diamond structures, ReADi
55: (2012)
Proyecto de colaboración dentro del Campus de Excelencia Internacional (CEI): Apoyo al contrato postdoctoral del Dr. Jurgen Schiefele. Temática: Controlling graphene devices with surface accoustic waves
56: (2012)
Proyecto de colaboración dentro del Campus de Excelencia Internacional (CEI): Apoyo al contrato postdoctoral del Dr. Jurgen Schiefele. Temática: Controlling graphene devices with surface accoustic waves
57: (2012)
RESONADORES DE ALTA FRECUENCIA EN ESTRUCTURAS ALN/DIAMANTE
58: (2012)
Sistema de Almacenamiento de Energía basado en Grafeno para Vehículos Eléctricos, SAVE. (FASE I)
59: (2012)
SISTEMAS DE ALMACENAMIENTO DE ENERGÍA CON GRAFENOS PARA VEHÍCULOS ELÉCTRICOS
60: (2012)
SISTEMAS DE ALMACENAMIENTO DE ENERGÍA CON GRAFENOS PARA VEHÍCULOS ELÉCTRICOS
61: (2012)
SUBP ISOM: EQUIPO DE INVESTIGACION - DISPOSITIVOS AVANZADOS DE GAP ANCHO PARA EL USO RACIONAL DE LA ENERGIA (RUE): CSIC+UV+UPC+URV+ROBOTIKER+UZ+UO+UPM
62: (2013)
Consolider RUE (CSD2009-00046) AEGAN (TEC2009-14307-C02-01) CAVE (TEC2012-38247)
63: (2013)
Contrato empresa HEMTs. BOSCH-ALEMANIA
64: (2013)
Contrato empresa HEMTs. BOSCH-ALEMANIA
65: (2013)
Convertidores de alta velocidad de conmutación multinivel y multifase para aplicaciones espaciales
66: (2013)
Convertidores de alta velocidad de conmutación multinivel y multifase para aplicaciones espaciales
67: (2013)
High frequency Resonators on AlN/Diamond structures, ReADi
68: (2013)
High frequency Resonators on AlN/Diamond structures, ReADi
69: (2013)
SISTEMAS DE ALMACENAMIENTO DE ENERGÍA CON GRAFENOS PARA VEHÍCULOS ELÉCTRICOS
70: (2013)
SUBP ISOM: EQUIPO DE INVESTIGACION - DISPOSITIVOS AVANZADOS DE GAP ANCHO PARA EL USO RACIONAL DE LA ENERGIA (RUE): CSIC+UV+UPC+URV+ROBOTIKER+UZ+UO+UPM
71: (2014)
GRAFENO PARA DISPOSITIVOS DE GENERACIÓN Y ALMACENAMIENTO DE ENERGÍA
72: (2014)
RESONADORES DE ALTA FRECUENCIA EN ESTRUCTURAS ALN/DIAMANTE
73: (2014)
SISTEMAS DE ALMACENAMIENTO DE ENERGÍA CON GRAFENOS PARA VEHÍCULOS ELÉCTRICOS
74: (2014)
SUBP ISOM: EQUIPO DE INVESTIGACION - DISPOSITIVOS AVANZADOS DE GAP ANCHO PARA EL USO RACIONAL DE LA ENERGIA (RUE): CSIC+UV+UPC+URV+ROBOTIKER+UZ+UO+UPM
75: (2015)
: Dispositivos avanzados de Gap Ancho para el uso Racional de la Energía (RUE)
76: (2015)
GRAFAGEN: Grafeno para dispositivos de generación y almacenamiento de energía
77: (2015)
SISTEMAS DE ALMACENAMIENTO DE ENERGÍA CON GRAFENOS PARA VEHÍCULOS ELÉCTRICOS
78: (2016)
NANOGREAT-2016: Graphene NANOcomposites REActors at preindustrial Technology readiness
79: (2017)
EIT Digital Doctoral School-2017: EIT Digital Doctoral Course Organization 2017
80: (2017)
EIT Digital Mobility of doctoral students-2017: EIT Digital Mobility of doctoral students - I&E Dcucation/Activity of students - UPM
81: (2017)
GRAPHENE NANOCOMPOSITES REACTORS AT PREINDUSTRIAL TECHNOLOGY READINESS (NANOGREAT)
82: (2017)
NANOGREAT-2017: Graphene NANOcomposites REActors at preindustrial Technology readiness
83: (2018)
DIGRAFEN: Dispositivos de grafeno para la mejora de las energías renovables
84: (2018)
DIGRAFEN: Dispositivos de grafeno para la mejora de las energías renovables
85: (2018)
DIGRAFEN: Dispositivos de grafeno para la mejora de las energías renovables
86: (2018)
EIT DIGITAL DOCTORAL SCHOOL
87: (2018)
EIT Digital Doctoral School-2018: I&E Education/Organisations of courses - Madrid
88: (2018)
EIT Digital Industrial Doctorate - Madrid: EIT Digital Industrial Doctorate 2018
89: (2018)
EIT Digital Mobility of doctoral students-2018: EIT Label I&E Education/Students - Madrid
90: (2018)
GRAPHENE NANOCOMPOSITES REACTORS AT PREINDUSTRIAL TECHNOLOGY READINESS (NANOGREAT)
91: (2018)
GRAPHENE NANOCOMPOSITES REACTORS AT PREINDUSTRIAL TECHNOLOGY READINESS (NANOGREAT-2017 )
92: (2019)
EIT Digital Doctoral School-2019: I&E Education/Organisations of courses - Madrid 2019
93: (2019)
EIT Digital Doctoral School-2019-Mobility: I&E Education/Students - Madrid 2019
94: (2019)
EIT Digital Industrial Doctorate - Madrid 2019: EIT Digital Industrial Doctorate - 2019
95: (2019)
NMAT2D-CM: NUEVOS MATERIALES BIDIMENSIONALES: CARACTERIZACION, PROPIEDADES Y APLICACIONES (G4-UPM)
Formación de Investigadores y Movilidad
21 Estancias y sabáticos recogidos en programas oficiales
1: (2007)
Estancia del Doctorando D. Roberto Cuerdo Bragado (becario UPM), en Department of Electrical and Computer Engineering, University of California Santa Bárbara, bajo la supervisión del Prof. Humees Mishra, para el estudio a baja temperatura y radiofrecuencia de transistores de alta movilidad electrónica sobre estructuras AlGaN/GaN.
2: (2008)
ESTANCIA DE EUGENIO SILLERO: Centro: Instituto de física aplicada de estado sólido (IAF), Fraunhofer Gesellschaft Localidad: Friburgo País Alemania
3: (2008)
ESTANCIA DE ROBERTO CUERDO BRAGADO: Santa Bárbara, Estados Unidos Centro: Department of Electrical and Computer Engineering, University of California Santa Barbara Investigador responsable: Umesh Mishra
4: (2010)
ASHU WANG.- ERASMUS MUNDUS 2009-2013, estancia de larga duración de 34 meses desde el 20 de mayo 2010
5: (2010)
KAI WANG, ERASMUS MUNDUS 2009-2013, estancia larga duración 6 meses desde el 2 de marzo de 2010
6: (2012)
A 1/f noise measurement system was designed, set up and tested. An automated graphene transfer system was developed
7: (2012)
CONSULADO CHINO.- GAO ZHAN
8: (2012)
CONSULADO CHINO.- GAO ZHAN
9: (2012)
ERASMUS MUNDUS, Doctorado.- ASHU WANG
10: (2012)
ERASMUS MUNDUS, Doctorado.- ASHU WANG
11: (2012)
ESTANCIA ERASMUS MUNDUS.- DR. SURENDRA SHRESTHA
12: (2012)
ESTANCIA ERASMUS MUNDUS.- DR. SURENDRA SHRESTHA
13: (2012)
ESTANCIA INVESTIGADORA DE ALBERTO BOSCA MOJENA. A 1/f noise measurement system was designed, set up and tested. An automated graphene transfer system was developed
14: (2012)
ESTANCIA INVESTIGADORA DE TOMMASO BRAZZINI.-The study of basic properties unintentionally-doped self-assembled InN nanocolumns.
15: (2012)
ESTANCIA INVESTIGADORA DR. MARKO JAK TADJER- EN NAVAL RESEARCH LABORATORY
16: (2012)
ESTANCIA INVESTIGADORA DR. MARKO JAK TADJER- EN NAVAL RESEARCH LABORATORY
17: (2012)
ESTANCIA INVESTIGADORA EN NAVAL RESEARCH LABORATORY.- Dr. MARKO JAK TADJER
18: (2012)
The study of basic properties unintentionally-doped self-assembled InN nanocolumns.
19: (2015)
Estancia por Programa Erasmus.- AK Lalith Kishore. Lugar de origen: Indian Institute of Technology
20: (2015)
Estancia por Programa Erasmus.- Vinayak Chavan. Lugar de origen: Indian Institute of Thechnology, Bombay, India
21: (2019)
Estancia Erasmus de Sunil Kumar
9 Tesis Doctorales
1: (2007)
"Dispositivos SAW en estructuras de nitruros del grupo III: propagación y modulación óptica y electrónica" Nombre del Departamento: Ingeniería Electrónica de la ETSIT-UPM Doctorando: D. Jorge Pedrós Ayala Director/es de la Tesis: D. Fernando Calle Gómez Nota: Sobresaliente cum laude por unanimidad Lugar, Fecha y Hora de la Defensa: ETSIT-UPM, 6 de julio de 1007
2: (2007)
Microfluidic-nanophotonic label-free biosensors for Lab-on-a-chip applications
3: (2013)
Crecimiento y caracterización de estructuras para micro y nanosistemas de nitruros-III para comunicaciones y sensores
4: (2013)
Properties and applications of high electron density structures based on InN and related compounds.- Doctorado Internacional-PhD Degree with International Honourable Mention)
5: (2014)
Thermal, stress, and traps effects in AlGaN/GaN HEMTs
6: (2015)
Technology and characterisation of GaN-based HEMT devices: high temperature and trapping effects
7: (2016)
Design, Technology and Characterization of Micromechanised Sensors and Actuators for Harsh Environments
8: (2017)
Development and characterization of graphene-based electronic devices
9: (2017)
Improvement of performance and reliability of GaN-based high electron mobility transistors (HEMTs) using high-k dielectrics
Difusión de Resultados de Investigación
115 Artículos en revistas
1: (2007)
A. NAVARRO, C. RIVERA, R. CUERDO, J.L. PAU, J. PEREIRO, F. CALLE, E. MUÑOZ "Noise study in photodiodes based on InGaN/GaN MQW" IEEE Electron Devices, Conf Proc- 2007 Spanish Conference, 321-324, ISBN: 1-4244-0868-7 (2007) ISSN: 0741-3106
2: (2007)
A. NAVARRO, C. RIVERA, R. CUERDO, J.L. PAU, J. PEREIRO, F. CALLE, E. MUÑOZ "Noise study in photodiodes based on InGaN/GaN MQW" 2007 Spanish Conference on Electron Devices IEEE Proceedings 321-324, ISBN: 1-4244-0868-7 (2007)
3: (2007)
E. SILLERO, D. LÓPEZ-ROMERO, F. CALLE, M. EICKHOFF, J. F. CARLIN, N. GRANDJEAN, M. ILEGEMS "Selective etching of AlInN/GaN heterostructures for MEMS technology" Microelectronic Engineering 84, 1152-1156 (2007) ISSN: 0167-9317
4: (2007)
J. PEDRÓS, Y. TAKAGAKI, T. IVE, M. RAMSTEINER, O. BRANDT, U. JAHN, K. H. PLOOG, F. CALLE "Exciton impact-ionization dynamics modulated by surface acoustic waves in GaN" Physical Review B, 75, 115305 (2007) ISSN: 1098-0121
5: (2007)
R. CUERDO, J. PEDRÓS, A. NAVARRO, A.F. BRAÑA, J.L. PAU, E. MUÑOZ, F. CALLE "High temperature assessment of nitride-based devices" Journal of Materials Science: Materials in Electronics, (published online) (2007) ISSN: 0957-4522
6: (2008)
AIGaN/GaN-Based Saw Delay-Line Oscillators
7: (2008)
Effects of N2 plasma pre-treatment on the SiN Passivation of AlGaN/GaN HEMT
8: (2008)
Fabrication and stress relief modelling of GaN based MEMS test structures grown by MBE on Si(111)
9: (2008)
High temperature assessment of nitride-based devices
10: (2008)
Temperature-dependent High-Frequency Performance of Deep Submicron Ion-Implanted AlGaN/GaN HEMTs
11: (2009)
E. SILLERO, O.A. WILLIAMS, V. LEBEDEV, V. CIMALLA, C. C. RÖHLIG, C. E. NEBEL, F. CALLE "High Young's modulus in nanocrystalline diamond films measured by force deflection and magnetomotive spectroscopy" Journal of Micromechanics and Microengineering 19, 115016 - 6 (2009)
12: (2009)
E. SILLERO, O.A. WILLIAMS, V. LEBEDEV, V. CIMALLA, C. C. RÖHLIG, C. E. NEBEL, F. CALLE "Static and dynamic determination of the mechanical properties of nanocrystalline diamond micromachined structures" Journal of Micromechanics and Microengineering 19, 115016 - 6 (2009)
13: (2009)
R. CUERDO, E. SILLERO, M. F. ROMERO, M. J. UREN, M.-A. DI FORTE POISSON, E. MUÑOZ, F. CALLE "High Temperature Microwave Performance of Submicron AlGaN/GaN HEMTs on SiC" IEEE Electron Device Letters, 30, 808-810 (2009)
14: (2009)
R. CUERDO, Y. PEI, Z. CHEN, S. KELLER, S. P. DENBAARS, F. CALLE, U. K. MISHRA, "The Kink Effect at Cryogenic Temperatures in Deep Submicron AlGaN/GaN HEMTs" IEEE Electron Device Letters, 30, 209-212 (2009)
15: (2010)
A.VILALTA-CLEMENTE, G. R.MUTTA, M. P. CHAUVAT, M. MORALES, J. L. DOUALAN, P. RUTERANA, J. GRANDAL, M. A. S ÁNCHEZ-GARCIA, F. CALLE, E. VALCHEVA, K. KIRILOV, ''Investigation of InN layers grown by molecular beam epitaxy on GaN templates'' Physica Status Solidi (a), 207, 1079-1082 (2010)
16: (2010)
G.F. IRIARTE, J.G. RODRÍGUEZ, F. CALLE "IC Compatible Synthesis of AlN for Energy Harvesting Applications" Revista Materia, ISSN 1517-7076, 15 - 4, 4th quarter of 2010. (2010)
17: (2010)
G.F. IRIARTE, J.G. RODRÍGUEZ, F. CALLE ''Synthesis of c-axis oriented AlN thin films on different substrates: A review" Materials Research Bulletin 45, 1039-1045 (2010)
18: (2010)
Investigation of InN layers grown by molecular beam epitaxy on GaN templates
19: (2010)
J. PEDRÓS, F. CALLE, R. CUERDO, J. GRAJAL, Z. BOUGRIOUA "Voltage tunable surface acoustic wave phase shifter on AlGaN/GaN" Applied Physics Letters 96, 123505 (2010) .
20: (2010)
Synthesis of c-axis oriented AlN thin films on different substrates: A review
21: (2010)
Voltage tunable surface acoustic wave phase shifter on AlGaN/GaN
22: (2011)
Effect of substrate-target distance and sputtering pressure in the synthesis of AlN thin films
23: (2011)
Effect of substrate-target distance and sputtering pressure in the synthesis of AlN thin films
24: (2011)
Fabrication of sub-100 nm IDT SAW devices on insulating, semiconducting and conductive substrates
25: (2011)
Influence of substrate crystallography on the room temperature synthesis of AlN thin films by reactive sputtering
26: (2011)
Influence of temperature and drain current on source and drain resistances in AlGaN/GaN HEMTs
27: (2011)
Temperature and time dependent threshold voltage characterization of AlGaN/GaN high electron mobility transistors
28: (2011)
Temperature and time dependent threshold voltage characterization of AlGaN/GaN high electron mobility transistors
29: (2011)
Volume charge carrier number fluctuations probed by low frequency noise measurements in InN layers
30: (2012)
Fabrication of sub-100 nm IDT SAW devices on insulating, semiconducting and conductive substrates
31: (2012)
Four Decades of Studying Global Linear Instability: Problems and Challenges
32: (2012)
High precision pressure sensors based on SAW devices in the GHz range
33: (2012)
Impact of N-2 Plasma Power Discharge on AlGaN/GaN HEMT Performance
34: (2012)
Impact of N2 plasma power discharge on AlGaN/GaN HEMT performance
35: (2012)
Investigation of AlInN barrier ISFET structures with GaN capping for pH detection
36: (2012)
Nanocrack-induced leakage current in AlInN/AlN/GaN
37: (2012)
Nanocrack-induced leakage current in AlInN/AlN/GaN
38: (2012)
Optimization of AlN thin layers on diamond substrates for high frequency SAW resonators
39: (2012)
Optimization of AlN thin layers on diamond substrates for high frequency SAW resonators
40: (2012)
Role of surface trap states on two-dimensional electron gas density in InAlN/AlN/GaN heterostructures
41: (2012)
Role of surface trap states on two-dimensional electron gas density in InAlN/AlN/GaN heterostructures
42: (2012)
Super-High-Frequency SAW Resonators on AlN/Diamond
43: (2012)
Super-High-Frequency SAW Resonators on AlN/Diamond
44: (2012)
Vertical conduction properties of few-layer epitaxial graphene / n-type 4H-SiC heterojunctions at cryogenic temperatures
45: (2013)
Application of GaN FET in 1MHz Large Signal Bandwidth Power Supply for Radio Frequency Power Amplifier
46: (2013)
Application of GaN FET in 1MHz Large Signal Bandwidth Power Supply for Radio Frequency Power Amplifier
47: (2013)
Coupling Light into Graphene Plasmons through Surface Acoustic Waves
48: (2013)
Coupling Light into Graphene Plasmons through Surface Acoustic Waves
49: (2013)
Diamond underlayer microstructure effect on the orientation of AlN piezoelectric layers for high frequency SAW resonators by TEM
50: (2013)
Diamond underlayer microstructure effect on the orientation of AlN piezoelectric layers for high frequency SAW resonators by TEM
51: (2013)
Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy
52: (2013)
Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy
53: (2013)
Gate oxide stability of 4H-SiC MOSFETs under on/off-state bias-temperature stress
54: (2013)
Gate oxide stability of 4H-SiC MOSFETs under on/off-state bias-temperature stress
55: (2013)
High precision pressure sensors based on SAW devices in the GHz range
56: (2013)
High precision pressure sensors based on SAW devices in the GHz range
57: (2013)
Impact of AlN Spacer on Metal-Semiconductor-Metal Pt-InAlGaN/GaN Heterostructures for Ultraviolet Detection
58: (2013)
Impact of AlN Spacer on Metal?Semiconductor?Metal Pt?InAlGaN/GaN Heterostructures for Ultraviolet Detection
59: (2013)
Impact of Intrinsic Stress in Diamond Capping Layers on the Electrical Behavior of AlGaN/GaN HEMTs
60: (2013)
Impact of Intrinsic Stress in Diamond Capping Layers on the Electrical Behavior of AlGaN/GaN HEMTs
61: (2013)
Investigation of AlInN barrier ISFET structures with GaN capping for pH detection
62: (2013)
Investigation of AlInN barrier ISFET structures with GaN capping for pH detection
63: (2013)
Simple and Accurate Method to Estimate Channel Temperature and Thermal Resistance in AlGaN/GaN HEMTs
64: (2013)
Simple and Accurate Method to Estimate Channel Temperature and Thermal Resistance in AlGaN/GaN HEMTs
65: (2013)
Simulation of thermal management in AlGaN/GaN HEMTs with integrated diamond heat spreaders
66: (2013)
Simulation of thermal management in AlGaN/GaN HEMTs with integrated diamond heat spreaders
67: (2013)
Simulation of thermal management in AlGaN/GaN HEMTs with integrated diamond heat spreaders
68: (2013)
Structural and morphological studies on wet-etched InAlGaN barrier HEMT structures
69: (2013)
Structural and morphological studies on wet-etched InAlGaN barrier HEMT structures
70: (2013)
Systematic optical characterization of two-dimensional electron gases in InAlN/GaN-based heterostructures with different in content
71: (2014)
Analysis of InAl(Ga)N/GaN wet-etching by structural, morphological and electrical methods
72: (2014)
Graphene foam for high performance capacitors
73: (2014)
Impact of device geometry at different ambient temperatures on the self-heating of GaN-based HEMTs
74: (2014)
Impact of device geometry at different ambient temperatures on the self-heating of GaN-based HEMTs
75: (2014)
Influence of fabrication steps on optical and electrical properties of InN thin films
76: (2014)
MnO2-Based Electrochemical Supercapacitors on Flexible Carbon Substrates
77: (2014)
Physical Model for GaN HEMT Design Optimization in High Frequency Switching Applications
78: (2014)
PostCMOS compatible sacrificial layers for aluminum nitride microcantilevers
79: (2014)
Thermionic-Field Emission Barrier Between Nanocrystalline Diamond and Epitaxial 4H-SiC
80: (2015)
Electron tomography of (In,Ga)N insertions in GaN nanocolumns grown on semi-polar (11(2)over-bar2) GaN templates
81: (2015)
Electro-optical characterization of IC compatible microcantilevers
82: (2015)
Electroreflectance characterization of AlInGaN/GaN high-electron mobility heterostructures
83: (2015)
Graphene foam functionalized with electrodeposited nickel hydroxide for energy applications
84: (2015)
Improvement of the adhesion between polyaniline and commercial carbon paper by acid treatment and its application in supercapacitor electrodes.
85: (2015)
Lattice pulling effect and strain relaxation in axial (In, Ga)N/GaN nanowire heterostructures grown on GaN-buffered Si(111) substrate
86: (2015)
Method for extracting relevant electrical parameters from graphene field-effect transistors using a physical model
87: (2015)
Post-CMOS compatible high-throughput fabrication of AIN-based piezoelectric microcantilevers
88: (2015)
Simulation of temperature and electric field-dependent barrier traps effects in AlGaN/GaN HEMTs
89: (2015)
Thermal stability study of AlGaN/GaN MOS-HEMTs using Gd2O3 as gate dielectric
90: (2015)
Trapping phenomena in AlGaN and InAlN barrier HEMTs with different geometries
91: (2016)
Automatic graphene transfer system for improved material quality and efficiency
92: (2016)
Effects of high-k gate dielectrics on the electrical behavior of AlInN/GaN based diodes and HEMTs
93: (2016)
Effects of Proton Irradiation on AlGaN/GaN based High Electron Mobility Transistors
94: (2016)
Electro-optical characterization of IC compatible microcantilevers
95: (2016)
Improvement of the adhesion between polyaniline and commercial carbon paper by acid treatment and its application in supercapacitor electrodes
96: (2016)
Physics-based Analytical Model for Input, Output and Reverse Capacitance of a GaN HEMT with the Field-plate Structure
97: (2016)
Polyaniline nanofiber sponge filled graphene foam as high gravimetric and volumetric capacitance electrode
98: (2016)
Thermal Assessment of AlGaN/GaN MOS-HEMTs on Si Substrate Using Gd2O3 as Gate Dielectric
99: (2017)
Effects of Gd2O3 Gate Dielectric on Proton-Irradiated AlGaN/GaN HEMTs
100: (2017)
Effects of HfO2 Gate dielectric and KOH-based pre-treatments on AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors
101: (2017)
Impact of 2D-Graphene on SiN Passivated AlGaN/GaN MIS-HEMTs Under Mist Exposure
102: (2017)
Physics-Based Analytical Model for Input, Output, and Reverse Capacitance of a GaN HEMT With the Field-Plate Structure
103: (2017)
Physics-based analytical model for input, output and reverse capacitance of a GaN HEMT with the field-plate structure
104: (2018)
Acoustically-driven surface and hyperbolic plasmon-phonon polaritons in graphene/h-BN heterostructures on piezoelectric substrates
105: (2018)
Modification of strain and 2DEG density induced by wafer bending of AlGaN/GaN heterostructure: Influence of edges caused by processing
106: (2018)
Thermal and Electrical Stability Assessment of AlGaN/GaN Metal-Oxide-Semiconductor High-Electron Mobility Transistors (MOS-HEMTs) With HfO2 Gate Dielectric
107: (2019)
A design for an electromagnetic filter for precision energy measurements at the tritium endpoint
108: (2019)
Advanced Graphene-Based Transparent Conductive Electrodes for Photovoltaic Applications
109: (2019)
Advanced graphene-based transparent conductive electrodes for photovoltaic applications
110: (2019)
Bio-inspired redesign of a hip prosthesis stem for improving geometrical optimization time
111: (2019)
Effect of quasiparticle excitations and exchange-correlation in Coulomb drag in graphene
112: (2019)
Neutrino physics with the PTOLEMY project: active neutrino properties and the light sterile case
113: (2019)
Participation of women in doctorate, research, innovation, and management activities at Universidad Politecnica de Madrid: analysis of the decade 2006-2016
114: (2019)
Reduced graphene oxide/polyaniline electrochemical supercapacitors fabricated by laser
115: (2019)
Transparent electrodes based on graphene
34 Conferencias invitadas en congresos
1: (2007)
F. CALLE Nanotecnología para la información y las comunicaciones Jornadas AUTOMEC, Universidad Miguel Hernández. Elche, Alicante. Marzo 2007.
2: (2009)
R CUERDO, E, MUÑOZ,F. CALLE "Performance of AlGaN-GaN HEMTs at high temperature" ESA-MoD Workshop on GaN Microwave Component Technologies. Ulm (Germany), 2009
3: (2009)
R. CUERDO, E.MUÑOZ, F. CALLE "Characterisation of Nitride-based HEMTs at high temperatures". ESA-MoD Workshop on GaN Microwave Component Technologies. Ulm (Germany), 2009
4: (2010)
M. TADJER, F. CALLE "Overview III-N HEMTs: device design" Consolider RUE Workshop on WBS for Power Applications. CNM, Barcelona, Barcelona (Spain) 2010.
5: (2010)
F. CALLE "KORRIGAN: III-Nitrides 2DEG Structures and HEMTs- Technology and Characterization" Jornada Tecnológica: Materiales de Gap ancho y Electrónica de potencia. CDTI Madrid (Spain) 2010
6: (2010)
F. CALLE, M. TADJER. "Overview III-N HEMTs: materials and technology". Consolider RUE Workshop on WBS for Power Applications, CNM Barcelona (Spain) 2010.
7: (2011)
High temperature assessment of Al(GaIn)N/GaN HEMTs for RF and power applications
8: (2011)
Surface acoustic waves III-nitrides: from materials to applications
9: (2011)
Technology for graphene-based nanoelectronic devices
10: (2011)
Thermal assessment of Al(GaIn)N/GaN HEMTs
11: (2011)
Time-Reversal-Based Multipath Mitigation Technique for Entropy Minimization of SAR Images
12: (2012)
Acoustoelectronics in AlGaN/GaN: from frequency control to single-electron transport applications
13: (2012)
Congreso Organizado. 21st European Heterostructure Technology Workshop, HETECH 2012
14: (2012)
Congreso Organizado:36th Workshop on Compound Semiconductors and Integrated Circuits, WOCSDICE2012
15: (2012)
High frequency AlN/diamond SAW devices
16: (2012)
Nanotechnology for high frequency communications: nitrides and graphene
17: (2012)
Short term applications of graphene
18: (2013)
Correlation between graphene properties and substrate grain structure in CVD fabrication
19: (2013)
Energy storage systems based on graphene
20: (2013)
Tecnología para nanoelectrónica de grafeno
21: (2014)
Graphene for Energy Storage
22: (2015)
Fabricación de grafeno mediante depósito en fase de vapor
23: (2015)
Graphene foams
24: (2015)
Graphene: technology and aplications
25: (2015)
Graphene-based supercapacitors
26: (2016)
Active plasmonics in graphene using surface acoustic waves
27: (2016)
Supercapacitors based in 3D graphene foams
28: (2016)
Surface acoustic wave-assisted plasmonics in graphene
29: (2016)
3D Graphene for energy storage
30: (2017)
Supercapacitors based in 3D graphene foams
31: (2018)
Graphene-based composite supercapacitors for enhanced capabilities
32: (2019)
Graphene Devices for Energy Applications
33: (2019)
Improved energy consumption of LEACH protocol through multi-hop in the cluster Seung
34: (2019)
Nanoelectrònica per a la informació i comunicacions
35 Cursos, seminarios y tutoriales
1: (2009)
Dª. Jacqueline L. Hall "Temperature Effects during the Growth of In-rich InGaN Films by Plasma-Assisted Molecular Beam Epitaxy" School of Physics & Astronomy, Univ. of Nottingham, Nottingham (United Kingdom) July 8th, 2009
2: (2009)
D. Abelardo León González "Centro de Investigación Experimental en Aplicaciones y Servicios de Inteligencia Ambiental" Grupo de investigación Life Supporting Technologies, Departamento de Tecnología Fotónica, E.T.S.I. Telecomunicación, Universidad Politécnica de Madrid (Spain) June 19th, 2009
3: (2009)
D. Alessio Fioravanti "Controlling Chronic Diseases related to Metabolic Disorders" Grupo de investigación Life Supporting Technologies, Departamento de Tecnología Fotónica, E.T.S.I. Telecomunicación, Universidad Politécnica de Madrid (Spain) June 19th, 2009
4: (2009)
D. Miguel del Pie "Advanced Measurements-Signal Integrity and more" LeCroy, Madrid (Spain)
5: (2009)
Dr. Ian Watson "3-Dimensional Microstructures in GaN Fabricated Using Sacrificial AlInN Layers" Institute of Photonics, University of Strathclyde, Glasgow (United Kingdom) June 26th, 2009
6: (2010)
Dr. FILIP TUOMISTO.- "Defect spectroscopy with positrons: what can we learn on III-nitrides and other compound semiconductors" 16/02/2010- -Positron research group leader Academy Research Fellow, Docent Department of Applied Physics Aalto University, Finland-Espoo - (Finland)
7: (2010)
VERONICA GAO ZHAN. "Synthesis and Characterization of quasi-single-crystal ZnO films on ZnO coated Silicon Substrates". 19/06/2010. ISOM-ETSIT-UPM. Madrid (España)
8: (2010)
YOLANDA CAMPOS.- "Multiplicadores de frecuencia MMIC para ondas milimétricas" 12/02/2010- -Universidad de Extremadura-Extremadura-(Spain)
9: (2011)
AlN - nanodiamond based MEMS and NEMS. Prof. Vadim Lebedev
10: (2011)
Chemical sensing with AlGaN/GaN structures. Prof. Volker Cimalla
11: (2011)
El grafeno y sus propiedades únicas.-Prof. Dr. Francisco Guinea
12: (2012)
Dr. Andres Castellanos-Gómez. Kavli Institute of NanoScience, TU Delft, Netherlands
13: (2012)
Prof. H.L. Hartnagel. Fachgruppe Mikrowellenelektronik, Institute for Microwave and Optics Technical University Darmstadt, Darmstadt, Germany. "Terahertz Studies towards Fast Imaging"
14: (2013)
Beyond self-assembly: Advanced fabrication and characterization methods applied to unconventional semiconductor nanostructures. SEMINARIO INVITADO IMPARTIDO POR BENITO ALEN
15: (2013)
"CURSO DE VERANO UPM: Emerging Applications of Graphene", 15 y 16 de junio de 2013.
16: (2013)
Nanomechanics and strain engineering in atomically thin MoS2. SEMINARIO INVITADO IMPARTIDO POR ANDRES CASTELLANOS-GÓMEZ
17: (2015)
Actual technological applications of graphene.- Seminarios Internacionales de Fronteras de la Ciencia de Materiales
18: (2015)
Large-scale synthesis of ultrathin layered MoO3 by van der Waals epitaxy
19: (2015)
Máster de Ingeniería de Materiales 'New Materials and Emerging Technologies
20: (2015)
Technology and characterization of GaN-HEMTs devices: high temperature and trapping effects
21: (2016)
Séptima edición del Finde Científico en la sede de Alcobendas del Museo Nacional de Ciencia y Tecnología. 'El Grafeno'.
22: (2017)
Seminario de ponente:- Prof. Hiroto Sekiguchi (Toyohashi University of Technology) Growth of Nitride-based Nanocolumn for Optical Device and Monolithic Integration of Si-MOSFET and GaN micro-LED
23: (2018)
Electromagnetic waves in carbon nanostructures. Dr. Maksimenko SA
24: (2018)
Curso De la Nanociencia a la Nanotecnología: Luces y Sombras del Control de la Materia a Escala Atómica
25: (2018)
Highly fabrication tolerant polarization beam splitters.- Dr. Nicolás Abadía
26: (2018)
Magnetic Phase Interference in Artificial Magnetic Lattices: Functions and Applications to Optical, High-Frequency, and Spin Wave Devices.- Dr. Mitsuteru Inoue
27: (2018)
Nanoscale Engineering of Materials and Interfaces for High Performance Rechargeable Batteries.- Dr. Vinodkumar Etacheri
28: (2018)
Nano-structured optoelectronic devices.- Dra. Sudha Mokkapati
29: (2018)
20 YEARS OF UPM-UNIV.SHIZUOKA COOPERATION on Photonic Devices based on ZnO and RELATED ALLOYS.- Prof. Jiro Temmyo
30: (2019)
Batteries research activities at Korea Institute of Science and Technology
31: (2019)
Cuentanos tu tesis.-Entrega de Premios.
32: (2019)
Exploring new electrode materials for sodium-ion batteries
33: (2019)
Natural proteinaceous nanoparticles for theranostic purposes
34: (2019)
Patentes y Derechos de Autor. Lo que todo investigador debe saber
35: (2019)
Using Nanostructured materials to improve high capacity and fast charging battery materials
15 Otras Publicaciones
1: (2010)
DR. ENRIQUE CALLEJA et al " La iluminación del futuro se basará en LEDs" http://agaudi.wordpress.com/2010/02/01/la-iluminacion-del-futuro-se-basara-en-leds/
2: (2013)
EL ISOM ORGANIZA EL CURSO DE VERANO UPM 2013 TITULADO: 'EMERGING APPLICATIONS OF GRAPHENE' Dirigido a estudiantes de 3° y 4° de grado y de máster y doctorado de ingenierías y ciencias, así como a todos los interesados en este campo de tanto interés científico y tanto potencial industrial. Contamos con la participación de invitados muy reconocidos de la academia (ICMM-CSIC, ICFO, MIT, Nanogune, Technical University Munich, UPM) y de la empresa (Airbus, Avanzare, Graphenea, Nokia).
3: (2014)
Diamond-coated high density vias for silicon substrate-side thermal management of GaN HEMTs,
4: (2014)
La revolución del grafeno
5: (2014)
Physical model for GaN HEMT design optimization in high frequency switching applications,
6: (2014)
Physical model for GaN HEMT design optimization in high frequency switching applications, ESSDERC/ESSCIRC, Venice, Italy
7: (2014)
Physical modeling and optimization of a GaN HEMT design with a field plate structure for high frequency application,
8: (2015)
Otras Redes de participación del ISOM-UPM; Plataforma Tecnológica Española de Materiales Avanzados y Nanomateriales http://www.materplat.com/ Prof. Fernando Calle fernando.calle@upm.es
9: (2016)
Grupo de Dispositivos Semiconductores del ISOM: El GRAFENO
10: (2016)
La Universidad Politécnica de Madrid en el Finde Científico. Tecnología electrónica del grafeno, ¿quieres conocerla?. Museo Nacional de Ciencia y Tecnología,MUNCYT
11: (2016)
Nueva web sobre Nanotecnología en la UPM
12: (2016)
Simposio Internacional: Materiales bidimensionales: explorando los límites de la física y la ingeniería. Ciencias de la Vida y de la Materia, Madrid, 22 y 23 de junio de 2016.
13: (2017)
Equipo investigador del proyecto de investigación galardonado en el XVIII Concurso Nacional de Ayudas a la Investigación en Ciencias de la Vida y de la Materia de la Fundación Ramón Areces, que lleva por título: 'Biomateriales basados en grafeno-macrófagos: caracterización funcional para su aplicación en patología cardiovascular'. IP: Lisardo Boscá Gomar
14: (2018)
La revista Europhysics News (vol. 49 n. 4) de la European Physical Society destaca en su reseña titulada 'Nanoscale light trapping in graphene/h-BN by sound waves' el reciente artículo 'Acoustically-driven surface and hyperbolic plasmon-phonon polaritons in graphene/h-BN heterostructures on piezoelectric substrates', J. Phys. D: Appl. Phys. 51, 204004 (2018), publicado por los investigadores del ISOM-UPM: Rajveer Fandan, Jorge Pedrós, Alberto Boscá, Javier Martínez y Fernando Calle
15: (2018)
PTOLEMY: A Proposal for Thermal Relic Detection of Massivectional Detectie Neutrinos and Diron of MeV Dark Matter, arXiv:1808.01892 [physics.ins-det] (2018).
163 Ponencia en Congresos
1: (2007)
A. Navarro, C. Rivera, R. Cuerdo, J.L. Pau, J. Pereiro, F. Calle, E. Muñoz "Noise study in photodiodes based on InGaN/GaN" MQW 6th Spanish Conference on Electronic Devices, CDE-07 El Escorial (Madrid, España) 31 de enero al 2 de febrero de 2007
2: (2007)
A. NAVARRO, C. RIVERA, R. CUERDO, J.L. PAU, J. PEREIRO, F. CALLE, E. MUÑOZ "Noise study in photodiodes based on InGaN/GaN MQW". 2007 Spanish Conference on Electron Devices IEEE Proceedings 321-324, ISBN: 1-4244-0868-7 (2007) ISSN: 0741-3106 31 de enero al 2 de febrero 2007 El Escorial, Madrid (España)
3: (2007)
E. Sillero, A. Bengoechea, M. A. Sánchez-García, F. Calle "III-Nitride MEMS grown by MBE on Si(111): Fabrication and mechanical characterisation" 16th European Workshop on Heterostructures Technology Frejus (Francia) 2 al 5 de septiembre de 2007
4: (2007)
E. Sillero, D. López-Romero, A. Bengoechea, M. A. Sánchez-García, F. Calle "Fabrication and stress relief modelling of GaN based MEMS test structures grown by MBE on Si(111)" 7th International Conference on Nitride Semiconductors (ICNS07) Las Vegas (USA) 16 al 21 de septiembre de 2007
5: (2007)
F. Calle "Nanotecnología para la información y las comunicaciones" Jornadas AUTOMEC, Universidad Miguel Hernández. Elche, Alicante. Marzo 2007.
6: (2007)
R. Cuerdo, F. Calle, A. F. Braña, E. Muñoz, Y. Cordier, M. Azize, N. Baron, S. Chenot "High temperature DC performance of nitride HEMTs with different gate length" 16th European Workshop on Heterostructures Technology Frejus (Francia) 2 al 5 de septiembre de 2007
7: (2007)
R. Cuerdo, F. Calle, A. F. Braña, Y. Cordier, M. Azize, N. Baron, S. Chenot, E. Muñoz "High temperature behaviour of AlGaN/GaN HEMTs on Si(111) and sapphire substrates" 7th International Conference on Nitride Semiconductors (ICNS07) Las Vegas (USA) 16 al 21 de septiembre de 2007
8: (2007)
Y. Pei, R. Cuerdo, F. Recht, N. Fichtenbaum, S. Keller, S.P. Denbaars, F. Calle, U.K. Mishra "Low temperature high-frequency performance of deep submicron AlGaN/GaN HEMTs" The 34th International Symposium on Compound Semiconductors (ISCS07) Kyoto (Japón) 15 al 18 de octubre de 2007
9: (2008)
DC and RF Performance of AlGaN/GaN HEMTs on SiC at High Temperatures Int. Workshop on Nitrides Montreaux (Suiza), 2008.
10: (2008)
Nanoporous GaN by UV assisted electroless etching for sensor applications Int. Workshop on Nitrides Montreaux (Suiza), 2008.
11: (2008)
RF MEMS Switches with III-N Technology 32nd Workshop on Compound Semiconductors and Integrated Circuits, WOCSDICE 2008. Lovaina (Bélgica), 2008.
12: (2009)
F. KNÖBBER, E. SILLERO, C.-C. RÖHLIG, O.A. WILLIAMS, R.E. SAH, L. KIRSTE, V. CIMALLA, C.E.NEBEL, F. CALLE, V. LEBEDEV "Piezoelectrically actuated AlN and Nanodiamond microstructures" 18th European Workshop on Heterostructures Technology Ulm (Germany), 2009
13: (2009)
G.F.IRIARTE, E. SILLERO, J.G. RODRÍGUEZ, A.NAVARRO, J. PEDRÓS, F.CALLE "E-beam lithography of nano IDT on insulating, semiconducting and conductive substrates" 33rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE Málaga (Spain), 2009
14: (2009)
J. EROLES, A. BENGOECHEA, M.A. SANCHEZ-GARCIA, F. CALLE "Characterization of a pH sensor based on an AlGaN/GaN transistor" 7th Spanish Conference on Electronic Devices. CDE-09. IEEE, Electron Devices, 258-261, ISBN: 978-1-4244-2838-0 Santiado de Compostela (Spain), 2009
15: (2009)
J. PEDRÓS, F. CALLE, J. GRAJAL, Z. BOUGRIOUA "Voltage tunable SAW phase shifter on AlGaN/GaN" 2009 IEEE International Ultrasonics Symposium Roma (Italy), 2009.
16: (2009)
J.G. RODRÍGUEZ, G.F. IRIARTE, F. CALLE "Optimization of c-axis oriented reactive sputter deposited AlN films" 18th European Workshop on Heterostructures Technology Ulm (Alemania), 2009
17: (2009)
J.M. ROUTOURE, B. GUILLET, L. MÉCHIN, A. VILALTA-CLEMENTE, J. GRANDAL, M. A. SÁNCHEZ-GARCÍA, S. MARTÍN, F. CALLE, P. RUTERANA "Low frequency noise measurements in InN films" 2009 E-MRS Fall Meeting, Symposium on Indium Nitride. Warsaw (Poland), 2009
18: (2009)
M. F. ROMERO, M. J. UREN, A. JIMÉNEZ, R. CUERDO, C. DUA, F. CALLE, E. MUÑOZ "Thermal storage effects in Ni/Au-gate" 7th Spanish Conference on Electronic Devices CDE-09.IEEE Electron Device Letters, 258-261,ISBN: 978-1-4244-2838-0 Santiago de Compostela (Spain), 2009
19: (2009)
R. CUERDO, F. CALLE "Source and drain resistances behaviour as a function of temperature and drain current in AlGaN/GaN HEMTs" 8th International Conference of Nitride Semiconductors (ICNS-8) Jeju (Korea), 2009
20: (2009)
R. CUERDO, M. UREN, M.-A. DI FORTE POISSON, E. MUÑOZ, F. CALLE "DC and microwave behaviour of AlGaN/GaN HEMTs on SiC at high temperature" 33rd Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE09) Málaga (Spain), 2009
21: (2010)
J.G. RODRÍGUEZ, G. FUENTES, O. WILLIAMS, F. CALLE "The Influence of the Substrate Roughness on the c-Axis Orientation of AlN/Diamond Thin Films" Proc. 10th Workshop on Expert Materials Characterization and Technologies, EXMATEC 2010. Seeheim-Darmstadt (Germany) 2010
22: (2010)
A. VILALTA-CLEMENTE, G. R. MUTTA, M. MORALES, J.L. DOUALAN, J. GRANDAL, M. A. SÁNCHEZ-GARCÍA, F. CALLE, E. VALCHEVA, K. KIRILOV, P. RUTERANA "Structural Study of InN layer with compressive strain" E-MRS, Symposium G: Physics and applications of novel gain materials based on III-V-N compounds Strasbourg (France), 2010
23: (2010)
G. MENEGHESSO, A. STOCCO, N. RONCHI, E. ZANONI, R. CUERDO, F. CALLE, E. MUNOZ, M.J. UREN " Kink and Cathodoluminescence in AlGaN/GaN HEMTs" Proc. 34th Workshop on Compound Semiconductors and Integrated Circuits, WOCSDICE 2010. Seeheim-Darmstadt (Germany), 2010
24: (2010)
G.F. IRIARTE, J.G. RODRÍGUEZ, F. CALLE."IC Compatible Synthesis of AlN for Energy Harvesting Applications". Materia Symposium 2010. Rio de Janeiro (Brasil), 2010
25: (2010)
M. J. TADJER, R. CUERDO, T. J. ANDERSON, K. D. HOBART, S. MARTÍN-HORCAJO, F. CALLE "Comparative study of threshold voltage stability in enhancement mode AlGaN/GaN HEMTs". Int. Workwhop on Nitrides Tampa (EEUU), 2010
26: (2010)
R. CUERDO, J. GRAJAL, F. CALLE "Power Performance of AlGaN/GaN HEMTs as a Function of Temperature". Proc. 34th Workshop on Compound Semiconductors and Integrated Circuits, WOCSDICE 2010 Seeheim-Darmstadt (Germany), 2010
27: (2010)
S. MARTÍN-HORCAJO, M. J. TADJER, R. CUERDO, M. F. ROMERO, F. CALLE "Evaluation of the thermal stability in D-mode and E-mode HEMTs based on AlGaN/GaN" 19th European Workshop on Hetectostructure HETECH 2010 Creta (Greece), 2010
28: (2010)
S. MARTÍN-HORCAJO, R. CUERDO, E. SILLERO, F. CALLE. "Self-heating effects in algan/gan hemts at high temperature". Proc. 34th Workshop on Compound Semiconductors and Integrated Circuits, WOCSDICE 2010 Seeheim-Darmstadt (Germany), 2010
29: (2010)
T. BRAZZINI, J. GRANDAL, A. PRADO, A. VILLATA-CLEMENTE, F. CALLE. "InN-based material devices for infrared photodetection". Proc. 19th European Workshop on Heterostructures Technology Crete (Greece) 2010
30: (2011)
Acoustic charge transport through 1D constrictions in 2DEG AlGaN/GaN heterostructures
31: (2011)
Carbon graphitization on top of SiO2
32: (2011)
Cryogenic behaviour of nanocrystalline diamond and epitaxial graphene Schottky contacts to 4H-SiC
33: (2011)
Evidence of charge carrier number fluctuations by low frequency noise measurements in MBE grown Indium Nitride layers
34: (2011)
Evidence of charge carrier number fluctuations in InN thin films?
35: (2011)
Evidence of charge carrier number fluctuations in InN thin films?
36: (2011)
Fabrication and characterization at high temperature of AlGaN/GaN enhancement HEMTs
37: (2011)
Fabrication and characterization at high temperature of AlGaN/GaN enhancement-mode HEMTs
38: (2011)
Fabrication of high frequency SAW resonators using AlN/Diamond/Si technology
39: (2011)
High frequency high-order Rayleigh modes in ZnO/GaAs
40: (2011)
High Temperature Pulsed and DC Performance of AlInN/GaN HEMTs
41: (2011)
High temperature pulsed and DC performance of AlInN/GaN HEMTs
42: (2011)
Impact of N2 plasma power and duration on AlGaN/GaN HEMT
43: (2011)
Impact of N2 plasma power and duration on AlGaN/GaN HEMT
44: (2011)
InN-based MIS rectification device
45: (2011)
InN/GaN heterojunction electrical behavior
46: (2011)
Method of Channel Temperature and Thermal Resistance Extraction in AlGaN/GaN HEMTs
47: (2011)
Method of channel temperature and thermal resistance extraction in AlGaN/GaN HEMTs
48: (2011)
Sputter optimization of AlN on diamond substrates for high frequency SAW resonators
49: (2011)
Sputtering of AlN on micro and nanocrystalline diamond for high frequency SAW devices
50: (2011)
Sputtering of AlN on micro and nanocrystalline diamond for high frequency SAW devices
51: (2011)
Thermal effects in Ni/Au and Mo/Au gate metallization AlGaN/GaN HEMT¿s reliability
52: (2011)
X-ray diffraction and transmission electron microscopy analysis of threading dislocations in MBE grown InN layers
53: (2011)
2D Channel Modulation of AlInN/GaN HEMTs Using a Selective Recess Etch
54: (2011)
2D channel modulation of AlInN/GaN HEMTs using a selective recess etch
55: (2012)
Acoustoelectronics in AlGaN/GaN: from frequency control to single-electron transport applications
56: (2012)
Ambient p-doping of CVD
57: (2012)
Chemical vapour deposition of graphene on 3D metal foams
58: (2012)
Electrical and Surface Characterization of Wet-etched InAlN/AlN/GaN HEMTs
59: (2012)
Electrical and surface characterization of wet-etched InAlN/AlN/GaN HEMTs
60: (2012)
Gate oxide stability of 4H-SiC MOSFETs under on/oFF-state bias-temperature stress
61: (2012)
Graphene Electrodes For Nano-LEDs
62: (2012)
Graphene-like layers obtained from PMMA
63: (2012)
Heat Spreading in III-Nitride HEMTs by Diamond Integration
64: (2012)
High Frequency AlN/Diamond SAW devices
65: (2012)
High Precision Pressure Sensors Based on SAW Devices Fabricated on Diamond Substrates
66: (2012)
Investigation of AlInN barrier ISFET structures with GaN capping for pH detection
67: (2012)
Investigation of Al1xInxN barrier ISFET structures with GaN capping on silicon substrates for pH detection
68: (2012)
Nanocrystalline diamond integration in III-Nitride HEMTs
69: (2012)
NanoLEDs with graphene electrode
70: (2012)
On Surface trap and extended dislocation network in III-nitride Heterostructures
71: (2012)
Photocurrent analysis of MSM InAlGaN/GaN heterostructure photodetectors
72: (2012)
Photoresponse of metal-semiconductor-metal InAlGaN/GaN structures
73: (2012)
Physical model for electrical measurements in graphene
74: (2012)
Room temperature synthesis of AlN based piezoelectric microcantilevers
75: (2012)
Simulation of thermal management in AlGaN/GaN HEMTs
76: (2012)
Structural and morphological studies on wet-etched InAlGaN barrier HEMT structures
77: (2012)
Structural characterization of wet-etched quaternary InAlGaN barrier HEMT structures
78: (2012)
Systematic optical characterization of two-dimensional electron gases in InAlN/GaN-based heterostructures with different In content
79: (2012)
The influence of the diamond substrate surface on the SAW device performance
80: (2012)
Thermionic and FIeld emission from nanocrystalline diamond and epitaxial graphene into epitaxial 4H-SiC.
81: (2012)
Vertical Conduction Mechanism of Epitaxial Graphene Heterojunctions to 4H-SiC
82: (2013)
AFM electrical characterization of graphene nano LEDs
83: (2013)
Application and Modeling of GaN FET in 1MHz Large Signal Bandwidth Power Supply for Radio Frequency Power Amplifier
84: (2013)
Application of GaN FET in 1MHz Large Signal Bandwidth Power Supply for Radio Frequency Power Amplifie
85: (2013)
Chemical vapour deposition of graphene on 3-dimensional metal foams for energy-storage applications
86: (2013)
Correlation between graphene properties and substrate grain structure in CVD fabrication
87: (2013)
Coupling light into graphene plasmons through surface acoustic waves
88: (2013)
Coupling light into graphene plasmons with the help of surface acoustic waves
89: (2013)
Diamond substrate microstructure effect on the orientation of AlN piezoelectric layers for high frequency SAW resonators by TEM
90: (2013)
Emerging Applications of Graphene
91: (2013)
Energy Storage based in Graphene
92: (2013)
Etching of AlGaN/GaN by Cl2-based ICP
93: (2013)
Flexible graphene device for lighting LED
94: (2013)
Gd2O3 gate dielectric for AlGaN/GaN HEMTs
95: (2013)
Graphene: processing and emerging application
96: (2013)
Graphene-based supercapacitors for electric vehicles
97: (2013)
Graphene-based supercapacitors for electric vehicles
98: (2013)
Impact of Intrinsic Stress in Diamond Capping Layers on the Electrical Behavior of AlGaN/GaN HEMTs
99: (2013)
MnO2-based electrochemical supercapacitors on flexible carbon substrates
100: (2013)
Nitride 2DEG-based devices for UV photodetection
101: (2013)
Nitride 2DEG-based devices for UV photodetection
102: (2013)
PAMBE grown InN layers electrical conduction by low frequency noise technique
103: (2013)
Thermal stability of GaN on-Si HEMTs with different cap layers: GaN, in situ SiN, and in situ SiN/GaN
104: (2013)
Thermal stability of GaN on-Si HEMTs with different in situ cap layers
105: (2013)
Two dimensional electron gas related luminescence in InAl(Ga)N/AlN/GaN-based heterostructures
106: (2013)
Use of PMMA to obtain Graphene layer
107: (2013)
Use of PMMA to obtain Graphene layer
108: (2013)
3D graphene supercapacitor for energy applications'
109: (2014)
Coupling light into graphene plasmons with the help of surface acoustic waves
110: (2014)
Electrical model for characterizing CVD graphene
111: (2014)
Field-dependent photoluminescence of InAlN/GaN based HEMT structures
112: (2014)
Flexible Graphene device for ligthing LED¿s
113: (2014)
Graphene foam functionalized with electrodeposited nickel hydroxide for energy applications
114: (2014)
Graphene foams: fabrication and applications
115: (2014)
Method for electrical evaluation of graphene using a GFET structure
116: (2014)
Polyaniline-coated carbon papers for supercapacitor electrodes
117: (2014)
TEM study of the AlN grain orientation grown on NCD diamond substrate
118: (2014)
Temperature performance of AlGaN/GaN MOS-HEMTs on Si substrates using Gd2O3 as gate dielectric
119: (2015)
Automatic transfer of graphene and its electrical characterization
120: (2015)
CVD-graphene growth and automated transfer for large-area, high performance applications
121: (2015)
Effects of HfO2 dielectric layer in AlInN/GaN heterostructures
122: (2015)
Graphene foams: fabrication and applications
123: (2015)
Graphene foams: fabrication and applications
124: (2015)
Graphene-based supercapacitors
125: (2015)
Lab-scale system for automated graphene transfer
126: (2015)
Reliability assessment of AlGaN/GaN HEMTs with different in situ cap layers under gate and drain bias stress
127: (2015)
Thermal stability study of AlGaN/GaN MOS-HEMTs
128: (2016)
Effects of high-k gate dielectrics on the electrical behavior of AlInN/GaN based diodes and HEMTs
129: (2016)
Effects of Proton Irradiation on AlGaN/GaN based High Electron Mobility Transistors
130: (2016)
Graphene reduced by laser for flexible electronics
131: (2016)
Graphene solar cells fabricated with an automated graphene transfer system
132: (2016)
Patterning on graphene membranes with a graphene AFM tip
133: (2017)
Acoustically-driven surface phonon-plasmon polaritons in graphene/h-BN/AlN heterostructures
134: (2017)
Application of graphene to transparent contacts for silicon-heterojunction solar cells
135: (2017)
Automated graphene transfer system for graphene solar cells
136: (2017)
Automated graphene transfer system for graphene solar cells
137: (2017)
Comparative study of different methods of production of thermally reduced graphene oxide
138: (2017)
Effects of HfO2 Gate dielectric and KOH-based pre-treatments on AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors
139: (2017)
Effects of mist exposure on SiN-passivated AlGaN/GaN-based MISHEMTs with and without graphene top layer
140: (2017)
Optical quantification of strain and doping in graphene
141: (2017)
Photonic integrated devices for energy applications
142: (2018)
Acoustically-driven surface and hyperbolic plasmon-phonon polaritons in graphene/h-BN heterostructures on piezoelectric substratesed by Surface Acoustic Waves
143: (2018)
Acoustically-driven surface phonon-plasmon polaritons in graphene/h-BN and graphene/h-BN/graphene heterostructures on piezoelectric substrates
144: (2018)
Engineering Light-Matter Interaction in Graphene by Surface Acoustic Waves
145: (2018)
Graphene for advanced transparent electrodes
146: (2018)
Graphene Silicon-Heterojunction Solar Cells
147: (2018)
Impermeable Graphene on AlGaN/GaN HEMTs
148: (2018)
Laser-reduced graphene for energy storage devices
149: (2018)
Light-Matter Interaction in Graphene/h-BN and Graphene/h-BN/Graphene Heterostructures Mediated by Surface Acoustic Waves
150: (2018)
Parameter space of graphene growth in cold-wall CVD reactors
151: (2018)
Thermally reduced graphene oxide for hydrogen storage
152: (2019)
Almacenamiento de Hidrógeno en nuevos materiales grafénicos
153: (2019)
Bio-inspired redesign of a hip prosthesis stem for improving geometrical optimization time
154: (2019)
Bio-inspired redesign of a hip prosthesis stem for improving geometrical optimization time
155: (2019)
Bioinspired redesign of a hip prosthesis stem for improving geometrical optimization time
156: (2019)
Challenges of CVD graphene integration into transparent electrodes for green energy solutions
157: (2019)
Defect assessment in graphene through water-soluble polymers
158: (2019)
Effect of graphene specific area on the mechanical properties of a PMMA bone cement
159: (2019)
Evaluation of fast thermal synthesis of reduced graphene oxides
160: (2019)
Imaging techniques for characterizing the nucleation dynamics in CVD graphene
161: (2019)
Imaging techniques for characterizing the nucleation dynamics in CVD graphene
162: (2019)
Optimizing the methodology for the production of reduced graphene oxides (rGO) by laser irradiation, chemical, thermal, and combined routes
163: (2019)
Reduced graphene oxide/polyaniline electrochemical supercapacitors fabricated by laser
Explotación de Resultados y Transferencia de Tecnología
1 Creación de empresas
1: (2014)
Graphene Light en abril de 2014
24 Patentes
1: (2013)
Procedimiento de transferencia de nanocapas y aparato de realización del mismo
2: (2014)
Cathode for lithium batteries.N. de solicitud: P 6400/2013. Patent Application Nº PCT/ES2014/070859. Inventores. A. Boscá Mojena, J. Pedrós Ayala, J. Martínez Rodrigo, F. CALLE GÓMEZ, T. Palacios Gutiérrez. REPSOL-UPM
3: (2014)
Hierarchical composite structures based on graphene foam or graphene-like foam. N. de solicitud: EP14382428. Inventores: J. Pedrós, A. Boscá, J. Martínez, F. CALLE GÓMEZ, M.S. Ruiz-Gómez, L. Pérez, M.V. Barranco, A. Páez Dueñas, J. García San Luis. REPSOL-UPM
4: (2014)
Method for producing graphene with tunable properties by a multi-step thermal reduction process N. de solicitud: EP14382352.4, Inventores: A. Páez Dueñas, J. García San Luis, M.P. Alvarez Rodríguez, M. Granda, M.C. Blanco Rodríguez, R. Santamaría Ramírez, M.P. Blanco, M.L. Fernández, R.M. Ménendez López, F. CALLE GÓMEZ. REPSOL-UPM
5: (2015)
Procedimiento de transferencia de nanocapas y aparato de realización del mismo
6: (2016)
Direct process for fabrication of functionalised 3D graphene foams
7: (2017)
Cathode for lithium batteries. Referencia: 15738054.4-1373/3117474. 15/02/2017. Repsol-UPM
8: (2017)
Cathode for lithium batteries. Referencia: 15738054.4-1373/3117474. 15/02/2017. Repsol-UPM
9: (2017)
Cathode for lithium batteries. Referencia: 15738054.4-1373/3117474. 15/02/2017. Repsol-UPM
10: (2017)
Direct process for fabrication of functionalised 3D graphene foams. Referencia: 16382228-31375. Repsol S.A-UPM
11: (2017)
Direct process for fabrication of functionalised 3D graphene foams. Referencia: 16382228-31375. Repsol S.A-UPM
12: (2017)
Direct process for fabrication of functionalised 3D graphene foams. Referencia: 16382228-31375. Repsol S.A-UPM
13: (2017)
Hierarchical composite structures based on graphene foam or graphene-like foam. 14382428.2-1351. Repsol S.A-UPM
14: (2017)
Hierarchical composite structures based on graphene foam or graphene-like foam. 14382428.2-1351. Repsol S.A-UPM
15: (2017)
Hierarchical composite structures based on graphene foam or graphene-like foam. 14382428.2-1351. Repsol S.A-UPM
16: (2017)
Method for producing graphene with tunable properties by a multi-step termal reduction process. 15763371.0-1375/3148933
17: (2017)
Method for producing graphene with tunable properties by a multi-step termal reduction process. 15763371.0-1375/3148933
18: (2018)
Cathode for lithium batteries
19: (2018)
Direct Process for fabrication of functionalised 3D Graphene foams
20: (2018)
Hierarchical composite structures based on graphene foam or graphene-like foam
21: (2018)
Method for producing graphene with tunable properties by a multi-step thermal reduction process
22: (2019)
Cathode for lithium batteries
23: (2019)
Hierarchical composite structures based on graphene foam or graphene-like foam
24: (2019)
Method for producing graphene with tunable properties by a multi-step termal reduction process
• TOMA DE DATOS DE MEMORIAS Y CV
• UPM.ES
S2i 2023 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNPACTO (IPT-020000-2010-22)
