Observatorio de I+D+i UPM
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INVESTIGADORES
ESTRUCTURAS DE I+D+I
ACTIVIDAD INVESTIGADORA
INNOVACIÓN
Investigador
Ana Mª Bengoechea Encabo
Categoría Investigador
CONTRATADO DE INVESTIGACION FUNDACION
Escuela UPM
E.T.S. DE INGENIEROS DE TELECOMUNICACION
Departamento:
INGENIERÍA ELECTRÓNICA
Area Conocimiento
SIN AREA DE CONOCIMIENTO
Grupo de Investigación:
Sin grupo de investigación
Email (Directorio UPM)
ana.bengoechea
upm.es
Datos de Memorias relacionados
Proyectos de I+D+i y generación de recursos
8 Proyectos de I+D+i
1: (2007)
"Ayudas para apoyar las líneas de I+D en el programa de creación y consolidación de grupos de investigación de la Universidad Politécnica de Madrid. CAM, Referencia: CCG07-UPM/000-3220"
2: (2007)
"(Bio)sensores químicos avanzados para medida in-situ de la calidad de aguas basados en elementos específicos de reconocimiento y lectura "multifuncional integrada"
3: (2007)
"Crecimiento y caracterización de heteroestructuras de nitruros-III e integración con materiales magnéticos para su aplicación de dispositivos híbridos magnético-semiconductor" TEC2004-05698-C02-01/MIC
4: (2007)
Crecimiento y caracterización de heteroestructuras de nitruros-III e integración con materiales magnéticos para su aplicación de dispositivos híbridos magnético-semiconductor" TEC2004-05698-C02-01/MIC, ADICIONAL
5: (2007)
"Nanoestructuras de Semiconductores como Componentes para la Información Cuántica (NANIC)" Min. Educación y Ciencia, Acción Estratégica en Nanotecnología. NAN2004-09109-C04-02. (2005-2008).
6: (2007)
"Tecnologías de Información Basadas en Optica Cuántica" Programa Consolider-Ingenio CSD2006-19.Anualidades(2006-2011)
7: (2008)
(Bio)sensores químicos avanzados para medida in-situ de la calidad de aguas basados en elementos específicos de reconocimiento y lectura multifuncional integrada
8: (2011)
Smart Nanostructured Semiconductors for Energy-Saving Light Solutions - SMASH
Formación de Investigadores y Movilidad
1 Estancias y sabáticos recogidos en programas oficiales
1: (2008)
ESTANCIA ANA BENGOECHEA ENCABO: Walter Schottky Institute, en Munich.
1 Tesis Doctorales
1: (2012)
Crecimiento, fabricación y caracterización de heteroestructuras y nanocolumnas ordenadas basadas en nitruros del grupo III para aplicaciones sensoras
Difusión de Resultados de Investigación
51 Artículos en revistas
1: (2008)
Fabrication and stress relief modelling of GaN based MEMS test structures grown by MBE on Si(111)
2: (2009)
A . BENGOECHEA ENCABO, J. HOWGATE, M. STUTZMANN, M. EICKHOFF, M.A. SÁNCHEZ-GARCÍA Ultrathin GaN/AlN/GaN solution-gate field effect transistor with enhanced resolution at low source-gate voltage Sensors and Actuators B, 142, 304 (2009)
3: (2009)
A. BENGOECHEA ENCABO, J. HOWGATEB, M. STUZMANNB, M. EICKHOFF, M.A SANCHEZ-GARCIA "Ultrathin GaN/AlN/GaN solution-gate field effect transistor with enhanced resolution at low source-gate voltage" Sensors and Actuators B 142 (2009) 304-307
4: (2009)
F. GONZÁLEZ-POSADA FLORES, A. REDONDO-CUBERO, R. GAGO, A. BENGOECHEA, A. JIMENES, D. GRAMBOLE, A.F. BRAÑA, E.MUÑOZ "High-resolution hydrogen profiling in AlGaN/GaN heterostructures grown by different epitaxial methods" J. Phys. D: Appl. Phys. 42, 055406 (5pp) (2009)
5: (2010)
E. CALLEJA, M.A. SÁNCHEZ-GARCIA, P. LEFEBVRE, J.RISTIC, F. BARBAGINI, A. BENGOECHEA, Z. GACEVIC. "Los LEDs también iluminarán las ciudades" Revista UPM, 16, 11-15 (2010)
6: (2011)
Critical aspects of substrate nanopatterning for the ordered growth of GaN nanocolumns
7: (2011)
Emission control of InGaN nanocolumns grown by molecular-beam epitaxy on Si(111) substrates
8: (2011)
InN/InGaN multiple quantum wells emitting at 1.5 mu m grown by molecular beam epitaxy
9: (2011)
Selective area growth of a- and c-plane GaN nanocolumns by molecular beam epitaxy using colloidal nanolithography
10: (2011)
Understanding the selective area growth of GaN nanocolumns by MBE using Ti nanomasks
11: (2012)
A comprehensive diagram to grow metal-polarity InGaN alloys by molecular beam epitaxy
12: (2012)
E-beam nano-patterning for the ordered growth of GaN/InGaN nanorods
13: (2012)
Fabrication of GaN nanorods by focused ion beam
14: (2012)
Ordered gan/ingan nanorods arrays grown by molecular beam epitaxy for phosphor-free white light emission
15: (2012)
Plasmon excitation in electron energy-loss spectroscopy for determination of indium concentration in (In,Ga)N/GaN nanowires
16: (2012)
Selective area growth and characterization of InGaN nano-disks implemented in GaN nanocolumns with different top morphologies
17: (2012)
Selective area growth of a- and c-plane GaN nanocolumns by molecular beam epitaxy using colloidal nanolithography
18: (2012)
Selective area growth of a- and c-plane GaN nanocolumns by molecular beam epitaxy using colloidal nanolithography
19: (2013)
A comprehensive diagram to grow (0001)InGaN alloys by molecular beam epitaxy
20: (2013)
A comprehensive diagram to grow (0001)InGaN alloys by molecular beam epitaxy
21: (2013)
Investigation of AlInN barrier ISFET structures with GaN capping for pH detection
22: (2013)
Investigation of AlInN barrier ISFET structures with GaN capping for pH detection
23: (2013)
Monolithic integration of InGaN segments emitting in the blue, green, and red spectral range in single ordered nanocolumns
24: (2013)
Monolithic integration of InGaN segments emitting in the blue, green, and red spectral range in single ordered nanocolumns (vol 102, 181103, 2013)
25: (2013)
Selective area growth and characterization of GaN nanocolumns, with and without an InGaN insertion, on semi-polar (11-22) GaN templates
26: (2013)
Selective area growth and characterization of GaN nanocolumns, with and without an InGaN insertion, on semi-polar (11-22) GaN templates
27: (2013)
Selective area growth and characterization of InGaN nanocolumns for phosphor-free white light emission
28: (2013)
Selective area growth and characterization of InGaN nanocolumns for phosphor-free white light emission
29: (2013)
Selective area growth of In(Ga)N/GaN nanocolumns by molecular beam epitaxy on GaN-buffered Si(111): from ultraviolet to infrared emission
30: (2013)
Selective area growth of In(Ga)N/GaN nanocolumns by molecular beam epitaxy on GaN-buffered Si(111): from ultraviolet to infrared emission
31: (2014)
Advances on MBE Selective Area Growth of III-Nitride nanostructures: from nanoLEDs to pseudo substrates
32: (2014)
Growth of InGaN/GaN core-shell structures on selectively etched GaN rods by molecular beam epitaxy
33: (2014)
Light-Emitting-Diodes based on ordered InGaN nanocolumns emitting in the blue, green and yellow spectral range
34: (2014)
Light-Emitting-Diodes based on ordered InGaN nanocolumns emitting in the blue, green and yellow spectral range
35: (2014)
Selective area growth of GaN nanostructures: A key to produce high quality (11-20) a-plane pseudo-substrates
36: (2014)
"Selective Area Growth of III-Nitrides on polar and semi-polar orientations: from light emitters to pseudo-substrates"
37: (2015)
Correlation among Growth Conditions, Morphology, and Optical Properties of Nanocolumnar InGaN/GaN Heterostructures Selectively Grown by Molecular Beam Epitaxy
38: (2015)
Crystallographically uniform arrays of ordered (In)GaN nanocolumns
39: (2015)
Demonstration of (In, Ga)N/GaN Core-Shell Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy on Ordered MOVPE GaN Pillars
40: (2015)
Distinguishing Cubic and Hexagonal phases within InGaN/GaN micro-structures using Electron Energy Loss Spectroscopy
41: (2015)
Electron tomography of (In,Ga)N insertions in GaN nanocolumns grown on semi-polar (11(2)over-bar2) GaN templates
42: (2015)
Lattice pulling effect and strain relaxation in axial (In, Ga)N/GaN nanowire heterostructures grown on GaN-buffered Si(111) substrate
43: (2015)
Selective area growth of III-nitride nanorods on polar, semi-polar, and non-polar orientations: device applications.
44: (2016)
Distinguishing cubic and hexagonal phases within InGaN/GaN microstructures using electron energy loss spectroscopy
45: (2016)
Influence of composition, strain, and electric field anisotropy on different emission colors and recombination dynamics from InGaN nanodisks in pencil-like GaN nanowires
46: (2016)
Influence of composition, strain, and electric field anisotropy on different emission colors and recombination dynamics from InGaN nanodisks in pencil-like GaN nanowires
47: (2016)
Oxygen-related photoluminescence quenching in selectively grown GaN nanocolumns: Dependence on diameter
48: (2016)
Titanium induced polarity inversion in ordered (In,Ga)N/GaN nanocolumns
49: (2017)
Selective area growth of AIN/GaN nanocolumns on (0001) and (11-22) GaN/sapphire for semi-polar and non-polar AIN pseudo-templates
50: (2017)
Selective Area Growth of InGaN/GaN Nanocolumnar Heterostructures by Plasma-Assisted Molecular Beam Epitaxy
51: (2019)
Ordered arrays of defect-free GaN nanocolumns with very narrow excitonic emission line width
2 Capítulos de libros
1: (2014)
Selective area growth of GaN nanowires by plasma-assisted molecular beam epitaxy
2: (2017)
Selective Area Growth of InGaN/GaN Nanocolumnar Heterostructures by Plasma Assisted Molecular Beam Epitaxy
9 Conferencias invitadas en congresos
1: (2007)
M. A.Sánchez-García, J. Grandal, A. Bengoechea, D. López-Romero,E. Calleja, S. Lazic, J.M. Calleja, E. Luna, A. Trampert, M. Niebelschütz, V. Cimalla, O. Ambacher "MBE Growth And Characterization Of InN On Silicon Substrates" European Materials Research Society Meeting (E-MRS) 2007 Estrasburgo (Francia) 28 de mayo al 1 Junio de 2007
2: (2008)
MBE growth and characterization of InN-based layers and nanostructures Workshop on Frontier Photonic and Electronic Materials and Devices Hakone, Kanagawa (Japón), 2008
3: (2010)
E. CALLEJA, A. BENGOECHEA-ENCABO, J. GRANDAL, S. FERNÁNDEZ, J. RISTIC, M.A. SANCHEZ-GARCÍA, F. BARBAGINI, P. LEFEBVRE, J.M. CALLEJA, E. GALLARDO, E.LUNA, A. TRAMPERT, U.JAHN. "Spontaneous and ordered growth of III-N nanocolumns by MBE: growth mechanisms and applications to Optoelectronic Devices". International Workshop on Nitride Semiconductors (IWNS 2010) Tampa, Florida (USA) 2010
4: (2011)
MBE growth and characterization of InGaN-based films and nanocolumns on Silicon substrates and GaN templates
5: (2011)
Understanding the Selective Area Nucleation and Growth of GaN nanocolumns by MBE using Ti nanomasks
6: (2013)
Selective Area Growth of III-N Nanostructrures for Optoelectronic Applications
7: (2015)
Morphology and optical properties of ordered GaN and InGaN nanocolumns grown on non-polar and semipolar orientations
8: (2015)
Novel optoelectronics devices
9: (2015)
Selective Area Growth of InGaN/GaN Nanocolumnar structures for Classical and Quantum Light Sources
1 Cursos, seminarios y tutoriales
1: (2012)
Ana Bengoechea Encabo.- "Crecimiento, fabricación y caracterización de heteroestructuras y nanocolumnas ordenadas basadas en nitruros del grupo III para aplicaciones sensoras"
1 Otras Publicaciones
1: (2015)
e-Politécnica, Investigación e innovación, Foto imagen Salas y Laboratorios del ISOM, Apartado: También es Noticia. Número 306, 16-23 de marzo de 2015 http://www.upm.es/institucional/UPM/CanalUPM/epolitecnica_inv/detalle?id=eaca18bac331c410VgnVCM10000009c7648a____ Dra. Ana Bengoechea Encabo abengo@isom.upm.es
40 Ponencia en Congresos
1: (2007)
E. Sillero, A. Bengoechea, M. A. Sánchez-García, F. Calle "III-Nitride MEMS grown by MBE on Si(111): Fabrication and mechanical characterisation" 16th European Workshop on Heterostructures Technology Frejus (Francia) 2 al 5 de septiembre de 2007
2: (2007)
E. Sillero, D. López-Romero, A. Bengoechea, M. A. Sánchez-García, F. Calle "Fabrication and stress relief modelling of GaN based MEMS test structures grown by MBE on Si(111)" 7th International Conference on Nitride Semiconductors (ICNS07) Las Vegas (USA) 16 al 21 de septiembre de 2007
3: (2007)
J. Grandal, A.Bengoechea, M.A. Sánchez-García, E. Calleja, E. Luna, A. Trampert, M. Niebelschütz, V. Cimalla "Structural Characterization Of Inn-Based Layers Grown On Si (111) And Si (001) Substrates By Mbe" 14th European Molecular Beam Epitaxy Workshop 2007 Sierra Nevada, Granada (ESPAÑA) 5 al 7 de marzo de 2007
4: (2007)
M. A.Sánchez-García, J. Grandal, A. Bengoechea, D. López-Romero,E. Calleja, S. Lazic, J.M. Calleja, E. Luna, A. Trampert, M. Niebelschütz, V. Cimalla, O. Ambacher "MBE Growth And Characterization Of Inn On Silicon Substrates"European Materials Research Society Meeting (E-MRS) 2007 Estrasburgo (Francia) 28 de mayo al 1 Junio de 2007
5: (2009)
J. EROLES, A. BENGOECHEA, M.A. SANCHEZ-GARCIA, F. CALLE "Characterization of a pH sensor based on an AlGaN/GaN transistor" 7th Spanish Conference on Electronic Devices. CDE-09. IEEE, Electron Devices, 258-261, ISBN: 978-1-4244-2838-0 Santiado de Compostela (Spain), 2009
6: (2009)
J. GRANDAL, A. BENGOECHEA, M. A. SÁNCHEZ-GARCÍA, E. CALLEJA, E. LUNA, A. TRAMPERT, E. GALLARDO, J.M. CALLEJA "InN/InGaN multiple quantum wells emitting at 1.5 µm" 15th European Workshop on Molecular Beam Epitaxy Zakopane (Poland), 2009
7: (2010)
A. BENGOECHEA, J. GRANDAL, S. FERNANDEZ-GARRIDO, M.A. SANCHEZ-GARCIA, F. BARBAGINI, P. LEFEBVRE, E. CALLEJA, E. LUNA, A. TRAMPERT. "Selective area growth of GaN nanocolumns by rf-plasma-assisted MBE". 16th International MBE Conference Berlin (Germany) 2010
8: (2011)
Control of the morphology on selective area growth of GaN nanocolumns by rf-plasma-assisted
9: (2011)
Control of the Morphology on Selective Area Growth of GaN Nanocolumns by Rf-Plasma-Assisted MBE.
10: (2011)
E-beam nanopatterning for the selective area growth of III-V nitride nanorods
11: (2011)
Efficient phosphor-free, white light emission from ordered
12: (2011)
Fabrication of GaN nanorods by focused ion beam
13: (2011)
Plasma-assisted MBE growth of III-N nanorods: applications to optoelectronic devices and photovoltaics
14: (2011)
Selective area growth of GaN nanocolumns by rf-plasma-assisted MBE at low temperature and under nitrogen-rich conditions
15: (2011)
Substrate nanopatterning by e-beam lithography to growth ordered arrays of III-nitride nanodetectors, white light emitters, and solar cells, Marie Curie Researchers Symposium
16: (2011)
Understanding of the nucleation and growth of ordered GaN nanocolumns by MBE on GaN
17: (2011)
Understanding the selective area nucleation and growth of GaN Nanocolumns by MBE using Ti nanomasks
18: (2012)
A comprehensive diagram to grow (0001) InGaN alloys by molecular beam epitaxy
19: (2012)
Electrical characterization of single GaN/InGaN nanorods grown by selective-area MBE
20: (2012)
Graphene Electrodes For Nano-LEDs
21: (2012)
Growth and characterization of ordered InGaN/GaN nanocolumnar structures on GaN/sapphire and Si (111) substrates
22: (2012)
Influence of substrate orientation on the morphology and optical properties of selective area growth GaN nanocolumns and InGaN quantum disks
23: (2012)
Investigation of AlInN barrier ISFET structures with GaN capping for pH detection
24: (2012)
Investigation of Al1xInxN barrier ISFET structures with GaN capping on silicon substrates for pH detection
25: (2012)
NanoLEDs with graphene electrode
26: (2012)
Selective area growth of GaN/InGaN nanocolumnar heterostructures on polar, semipolar and non-polar substrates
27: (2013)
AFM electrical characterization of graphene nano LEDs
28: (2013)
Coalescence of selective area growth GaN by MBE, for high quality polar, non polar and semi polar templates
29: (2013)
Growth and characterization of ordered In(Ga)N/GaN nanocolumnar structures on Si (111) substrates with In contents between 0 and 100%
30: (2013)
Localized emission from the apex of GaN/(In,Ga)N/GaN
31: (2013)
MBE selective area growth of polar, non-polar and semi-polar GaN and InGaN/GaN nanostructures
32: (2013)
Selective area growth of In(Ga)N/GaN nanocolumns by molecular beam epitaxy on Si(111): from ultraviolet to infrared emission
33: (2013)
Selective area growth of In(Ga)N/GaN nanocolumns on silicon substrates
34: (2013)
Selective area growth of InGaN/GaN nanostructures for green and white light emission
35: (2013)
Selective area growth of polar, non-polar and semi-polar GaN and InGaN/GaN nanostructures
36: (2015)
A two-color emitting ingan nanodisk as a site-controlled source of classical and quantum light
37: (2015)
Direct imaging of single InGaN/GaN core-shell microrods using nano-scale Scanning Transmission Electron Microscopy Cathodoluminescence
38: (2015)
Selective Area Growth of III- Nitride Nanorods on polar, semi-polar and non-polar orientations: Device applications
39: (2018)
Nanoscale Imaging of Individual AlN/GaN/AlN Quantum Disk embedded in GaN Nanowires
40: (2018)
Selective area growth of GaN nanocolumns with extremely low photoluminescence linewidth of <0.6 meV
Explotación de Resultados y Transferencia de Tecnología
5 Patentes
1: (2012)
Light-emitting diode chip. E2011,0717 DE X /3265/2011E23319DE
2: (2012)
Light-emitting diode chip. E2011,0717 DE X /3265/2011E23319DE
3: (2015)
Temperature-Stable All-InGaN White Nanorod LEDs
4: (2019)
Light-emitting diode chip
5: (2019)
Non-polar III-Nitride binary and ternary materials, method for obtaining thereof and uses
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S2i 2023 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
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