Memorias de investigación
Ponencias en congresos:
IN SITU CONTROL OF THE GE(100) SURFACE DOMAIN STRUCTURE FOR III-V MULTIJUNCTION SOLAR CELLS
Año:2013
Áreas de investigación
  • Ingenierías
Datos
Descripción
Vicinal Ge(100) is the common substrate for state of the art multi-junction solar cells grown by metal-organic vapor phase epitaxy (MOVPE). While triple junction solar cells based on Ge(100) present efficiencies > 40%, little is known about the microscopic III-V/Ge(100) nucleation and its interface formation. A suitable Ge(100) surface preparation prior to heteroepitaxy is crucial to achieve low defect densities in the III-V epilayers. Formation of single domain surfaces with double layer steps is required to avoid anti-phase domains in the III-V films. The step formation processes in MOVPE environment strongly depends on the major process parameters such as substrate temperature, H2 partial pressure, group V precursors [1], and reactor conditions. Detailed investigation of these processes on the Ge(100) surface by ultrahigh vacuum (UHV) based standard surface science tools are complicated due to the presence of H2 process gas. However, in situ surface characterization by reflection anisotropy spectroscopy (RAS) allowed us to study the MOVPE preparation of Ge(100) surfaces directly in dependence on the relevant process parameters [2, 3, 4]. A contamination free MOVPE to UHV transfer system [5] enabled correlation of the RA spectra to results from UHV-based surface science tools. In this paper, we established the characteristic RA spectra of vicinal Ge(100) surfaces terminated with monohydrides, arsenic and phosphorous. RAS enabled in situ control of oxide removal, H2 interaction and domain formation during MOVPE preparation.
Internacional
Si
Nombre congreso
9 International Conference on Concentrator Photovoltaic Systems
Tipo de participación
960
Lugar del congreso
Miyazaki, Japan
Revisores
Si
ISBN o ISSN
978-0-7354-1182-1
DOI
Fecha inicio congreso
15/04/2013
Fecha fin congreso
17/04/2013
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Título de las actas
IN SITU CONTROL OF THE GE(100) SURFACE DOMAIN STRUCTURE FOR III-V MULTIJUNCTION SOLAR CELLS
Esta actividad pertenece a memorias de investigación
Participantes
  • Autor: Sebastian Brückner
  • Autor: Enrique Barrigon Montañes UPM
  • Autor: Oliver Supplie
  • Autor: Anja Dobrich
  • Autor: Johannes Luczak
  • Autor: Claas Löbbel
  • Autor: Ignacio Rey-Stolle Prado UPM
  • Autor: Peter Kleinschmidt
  • Autor: Henning Döscher
  • Autor: Thomas Hannappel
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Grupo de Investigación: Semiconductores III-V
  • Centro o Instituto I+D+i: Instituto de Energía Solar
  • Departamento: Electrónica Física