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Descripción
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| The electrical and optical coupling between subcells in a multijunction solar cell affects its external quantum efficiency (EQE) measurement. In this study, we show how a low breakdown voltage of a component subcell impacts the EQE determination of a multijunction solar cell and demands the use of a finely adjusted external voltage bias. The optimum voltage bias for the EQE measurement of a Ge subcell in two different GaInP/GaInAs/Ge triple-junction solar cells is determined both by sweeping the external voltage bias and by tracing the I?V curve under the same light bias conditions applied during the EQE measurement. It is shown that the I?V curve gives rapid and valuable information about the adequate light and voltage bias needed, and also helps to detect problems associated with non-ideal I?V curves that might affect the EQE measurement. The results also show that, if a non-optimum voltage bias is applied, a measurement artifact can result. Only when the problems associated with a non-ideal I?V curve and/or a low breakdown voltage have been discarded, the measurement artifacts, if any, can be attributed to other effects such as luminescent coupling between subcells. | |
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Internacional
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Si |
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JCR del ISI
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Si |
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Título de la revista
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Progress in Photovoltaics |
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ISSN
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1062-7995 |
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Factor de impacto JCR
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9,696 |
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Información de impacto
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Volumen
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23 |
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DOI
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10.1002/pip.2597 |
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Número de revista
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11 |
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