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Descripción
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| A 6-18 GHz high power amplifier (HPA) design in GaN on SiC technology is presented. This power amplifier consists of a two stage corporate amplifier. It has been designed at Indra Sistemas and fabricated on a European foundry using a 0.25 ?m process. This HPA exhibits an averaged output power of 39.2 dBm with a mean gain of 11 dB in saturation and a 24.5% maximum power added efficiency in pulse mode operation. | |
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Internacional
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Si |
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Nombre congreso
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2018 13th European Microwave Integrated Circuits Conference (EuMIC) |
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Tipo de participación
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960 |
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Lugar del congreso
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Madrid, España |
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Revisores
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Si |
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ISBN o ISSN
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978-2-87487-052-1 |
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DOI
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10.23919/EuMIC.2018.8539895 |
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Fecha inicio congreso
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24/09/2018 |
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Fecha fin congreso
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25/09/2018 |
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Desde la página
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85 |
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Hasta la página
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88 |
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Título de las actas
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Proceedings of the 13th European Microwave Integrated Circuits Conference |