|
Descripción
|
|
|---|---|
| In this paper, we report the design of a GaN-based broad-band power amplifier using as active devices GaN high electron mobility transistors (HEMTs) grown on SiC substrates. The circuit is a 2-stage amplifier with microstrip corporative division/combination networks. Using devices with 0.5 um gate length and 1 mm gate width, a small-signal gain higher than 15 dB was obtained with 2-6 GHz bandwidth. An output power of 12.5W at 25 V is achieved in broadband and a saturation power of 18W at 4.5GHz is reported. The measured power-added efficiency is about 25-30% at 25 V. | |
|
Internacional
|
No |
|
Nombre congreso
|
XXIII Simposium Nacional de la Unión Científica Internacional de Radio. URSI 2008 |
|
Tipo de participación
|
960 |
|
Lugar del congreso
|
Madrid, España |
|
Revisores
|
Si |
|
ISBN o ISSN
|
978-84-612-6291-5 |
|
DOI
|
|
|
Fecha inicio congreso
|
22/09/2008 |
|
Fecha fin congreso
|
24/09/2008 |
|
Desde la página
|
1 |
|
Hasta la página
|
4 |
|
Título de las actas
|
CD Actas del XXIII Simposium Nacional de la Unión Científica Internacional de Radio. URSI 2008 |